To understand the quasi-static and dynamic compressive mechanical behavior of two- dimensional SiC fiber-reinforced SiC composites （2D-SiC1/SiC）, their compressive behavior at room temperature was investigated at a ...To understand the quasi-static and dynamic compressive mechanical behavior of two- dimensional SiC fiber-reinforced SiC composites （2D-SiC1/SiC）, their compressive behavior at room temperature was investigated at a strain rate from 10-4 to 104/s, and the fracture surfaces and damage morphology were observed. The results show that the dynamic failure strength of 2D-SiC1/SiC obeys the Weibull distribution, and the Weibull modulus is 5,66. Meanwhile, 2D-SiC1/SiC presents a transition from brittle to tough with a decrease of strain rate, and 2D-SiC1/SiC has a more significant strain rate sensitivity compared to the 2D-C/SiC composites. The failure mode of 2D-SiC1/SiC depends upon the strain rate.展开更多
The characteristics of 4H-SiC PiN diodes with a carbon-implanted drift layer was investigated and the reason of characteristics improvement was analyzed. The forward voltage drops of the diodes with carbonimplanted dr...The characteristics of 4H-SiC PiN diodes with a carbon-implanted drift layer was investigated and the reason of characteristics improvement was analyzed. The forward voltage drops of the diodes with carbonimplanted drift layer were around 3.3 V, which is lower than that of devices without carbon implantation, the specific-on resistance was decreased from 9.35 to 4.38 mΩcm^2 at 100 A/cm^2, and the reverse leakage current was also decreased. The influence of carbon incorporation in the Si C crystalline grids was studied by using deep-level transient spectroscopy（DLTS）. The DLTS spectra revealed that the Z_（1/2） traps, which were regarded as the main lifetime limiting defects, were dramatically reduced. It is proposed that the reduction of Z_（1/2） traps can achieve longer carrier lifetime in the drift layer, which is beneficial to the performance of bipolar devices.展开更多
基金Funded by the Scientific and Technological Development Project of Yantai(No.2013JH020)
文摘To understand the quasi-static and dynamic compressive mechanical behavior of two- dimensional SiC fiber-reinforced SiC composites （2D-SiC1/SiC）, their compressive behavior at room temperature was investigated at a strain rate from 10-4 to 104/s, and the fracture surfaces and damage morphology were observed. The results show that the dynamic failure strength of 2D-SiC1/SiC obeys the Weibull distribution, and the Weibull modulus is 5,66. Meanwhile, 2D-SiC1/SiC presents a transition from brittle to tough with a decrease of strain rate, and 2D-SiC1/SiC has a more significant strain rate sensitivity compared to the 2D-C/SiC composites. The failure mode of 2D-SiC1/SiC depends upon the strain rate.
基金Project supported by the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences
文摘The characteristics of 4H-SiC PiN diodes with a carbon-implanted drift layer was investigated and the reason of characteristics improvement was analyzed. The forward voltage drops of the diodes with carbonimplanted drift layer were around 3.3 V, which is lower than that of devices without carbon implantation, the specific-on resistance was decreased from 9.35 to 4.38 mΩcm^2 at 100 A/cm^2, and the reverse leakage current was also decreased. The influence of carbon incorporation in the Si C crystalline grids was studied by using deep-level transient spectroscopy（DLTS）. The DLTS spectra revealed that the Z_（1/2） traps, which were regarded as the main lifetime limiting defects, were dramatically reduced. It is proposed that the reduction of Z_（1/2） traps can achieve longer carrier lifetime in the drift layer, which is beneficial to the performance of bipolar devices.
