Intergrowth ferroelectric semiconductors with excellent spontaneous polarization field are highly promising piezo-photocatalytic candidate materials.In addition,developing structural design and revealing polarization ...Intergrowth ferroelectric semiconductors with excellent spontaneous polarization field are highly promising piezo-photocatalytic candidate materials.In addition,developing structural design and revealing polarization enhancement in-depth mechanism are top priorities.Herein,we introduce the intergrowth ferroelectrics Bi_(7)Ti_(4)NbO_(21)thin-layer nanosheets for piezo-photocatalytic CO_(2)reduction.Density functional theory(DFT)calculations indicate that interlayer lattice mismatch leads to increased tilting and rotation angle of Ti/NbO_(6)octahedra on perovskite-like layers,serving as the main reason for increased polarization.Furthermore,the tilting and rotation angle of the interlayer octahedron further increase under stress,suggesting a stronger driving force generated to facilitate charge carrier separation efficiency.Meanwhile,Bi_(7)Ti_(4)NbO_(21)nanosheets provide abundant active sites to effectively adsorb CO_(2)and acquire sensitive stress response,thereby presenting synergistically advanced piezo-photocatalytic CO_(2)reduction activity with a high CO generation rate of 426.97μmol g^(-1)h^(-1).Our work offers new perspectives and directions for initiating and investigating the mechanisms of high-performance intergrowth piezo-photocatalysts.展开更多
Doped HfO_(2)as an emerging ferroelectric material,holds considerable promise for non-volatile memory applications.Epitaxial growth of doped HfO_(2)thin films is widely adopted as an effective technique for revealing ...Doped HfO_(2)as an emerging ferroelectric material,holds considerable promise for non-volatile memory applications.Epitaxial growth of doped HfO_(2)thin films is widely adopted as an effective technique for revealing the intrinsic ferroelectric properties.In this study,based on systematic structural,chemical and electrical investigations,the influences of Mn doping and substrate orientation on ferroelectric properties of Mn-doped HfO_(2)epitaxial thin films are investigated.The results demonstrate that Mn-doped HfO_(2)thin films with orthorhombic phase can be epitaxially grown along[111]out-of-plane direction on both SrTiO_(3)(001)and(110)substrates,and 10%Mn-doping significantly stabilizes the orthorhombic polar phase and enhances the ferroelectric polarization.Interestingly,compared to the films on SrTiO_(3)(001)substrate,the better crystallinity and reduction of oxygen vacancy amount in Mn-doped HfO_(2)films grown on the SrTiO_(3)(110)substrate are observed,which enhance the remanent polarization and reduce the coercive field.It provides an effective approach for the controllable regulation of defects and the enhancement of intrinsic ferroelectricity in HfO_(2)-based materials.展开更多
The introduction of two-dimensional(2D)perovskite layers on top of three-dimensional(3D)perovskite films enhances the performance and stability of perovskite solar cells(PSCs).However,the electronic effect of the spac...The introduction of two-dimensional(2D)perovskite layers on top of three-dimensional(3D)perovskite films enhances the performance and stability of perovskite solar cells(PSCs).However,the electronic effect of the spacer cation and the quality of the 2D capping layer are critical factors in achieving the required results.In this study,we compared two fluorinated salts:4-(trifluoromethyl)benzamidine hydrochloride(4TF-BA·HCl)and 4-fluorobenzamidine hydrochloride(4F-BA·HCl)to engineer the 3D/2D perovskite films.Surprisingly,4F-BA formed a high-performance 3D/2D heterojunction,while4TF-BA produced an amorphous layer on the perovskite films.Our findings indicate that the balanced intramolecular charge polarization,which leads to effective hydrogen bonding,is more favorable in 4F-BA than in 4TF-BA,promoting the formation of a crystalline 2D perovskite.Nevertheless,4TF-BA managed to improve efficiency to 24%,surpassing the control device,primarily due to the natural passivation capabilities of benzamidine.Interestingly,the devices based on 4F-BA demonstrated an efficiency exceeding 25%with greater longevity under various storage conditions compared to 4TF-BA-based and the control devices.展开更多
The growing global energy demand and worsening climate change highlight the urgent need for clean,efficient and sustainable energy solutions.Among emerging technologies,atomically thin two-dimensional(2D)materials off...The growing global energy demand and worsening climate change highlight the urgent need for clean,efficient and sustainable energy solutions.Among emerging technologies,atomically thin two-dimensional(2D)materials offer unique advantages in photovoltaics due to their tunable optoelectronic properties,high surface area and efficient charge transport capabilities.This review explores recent progress in photovoltaics incorporating 2D materials,focusing on their application as hole and electron transport layers to optimize bandgap alignment,enhance carrier mobility and improve chemical stability.A comprehensive analysis is presented on perovskite solar cells utilizing 2D materials,with a particular focus on strategies to enhance crystallization,passivate defects and improve overall cell efficiency.Additionally,the application of 2D materials in organic solar cells is examined,particularly for reducing recombination losses and enhancing charge extraction through work function modification.Their impact on dye-sensitized solar cells,including catalytic activity and counter electrode performance,is also explored.Finally,the review outlines key challenges,material limitations and performance metrics,offering insight into the future development of nextgeneration photovoltaic devices encouraged by 2D materials.展开更多
Room temperature ferroelectric thin films are the key element of high-density nonvolatile memories in modern electronics. However, with the further miniaturization of the electronic devices beyond the Moore’s law, co...Room temperature ferroelectric thin films are the key element of high-density nonvolatile memories in modern electronics. However, with the further miniaturization of the electronic devices beyond the Moore’s law, conventional ferroelectrics suffer great challenge arising from the critical thickness effect, where the ferroelectricity is unstable if the film thickness is reduced to nanometer or single atomic layer limit. Two-dimensional(2D) materials, thanks to their stable layered structure, saturate interfacial chemistry, weak interlayer couplings, and the benefit of preparing stable ultra-thin film at 2D limit, are promising for exploring 2D ferroelectricity and related device applications. Therefore, it provides an effective approach to overcome the limitation in conventional ferroelectrics with the study of 2D ferroelectricity in van der Waals(vdW) materials. In this review article,we briefly introduce recent progresses on 2D ferroelectricity in layered vdW materials. We will highlight the study on atomically thin α-In2Se3, which is an emergent ferroelectric semiconductor with the coupled in-plane and out-of-plane ferroelectricity. Furthermore, two prototype ferroelectric devices based on ferroelectric α-In2Se3 will also be reviewed.展开更多
A catalyst of ferroelectric-BaTiO_(3)@photoelectric-TiO_(2) nanohybrids(BaTiO_(3)@TiO_(2))with enhanced photocatalytic activity was synthesized via a hydrolysis precipitation combined with a hydrothermal approach.Comp...A catalyst of ferroelectric-BaTiO_(3)@photoelectric-TiO_(2) nanohybrids(BaTiO_(3)@TiO_(2))with enhanced photocatalytic activity was synthesized via a hydrolysis precipitation combined with a hydrothermal approach.Compared to pure TiO_(2),pure BaTiO_(3) and BaTiO_(3)/TiO_(2) physical mixture,the heterostructured BaTiO_(3)@TiO_(2) exhibits significantly improved photocatalytic activity and cycling stability in decomposing Rhodamine B(RhB)and the degradation efficiency is 1.7 times higher than pure TiO_(2) and 7.2 times higher than pure BaTiO_(3).These results are mainly attributed to the synergy effect of photoelectric TiO_(2),ferroelectric-BaTiO_(3) and the rationally designed interfacial structure.The mesoporous microstructure of TiO_(2) is of a high specific area and enables excellent photocatalytic activity.The ferroelectric polarization induced built-in electric field in BaTiO_(3) nanoparticles,and the intimate interfacial interactions at the interface of BaTiO_(3) and TiO_(2) are effective in driving the separation and transport of photogenerated charge carriers.This strategy will stimulate the design of heterostructured photocatalysts with outstanding photocatalytic performance via interface engineering.展开更多
As a narrow band gap semiconductor,wurtziteβ-CuGaO_(2)has drawn increasing attention in the area of solar energy.Althoughβ-CuGaO_(2)has been theoretically predicted to possess ferroelectric polarization,its experi-m...As a narrow band gap semiconductor,wurtziteβ-CuGaO_(2)has drawn increasing attention in the area of solar energy.Althoughβ-CuGaO_(2)has been theoretically predicted to possess ferroelectric polarization,its experi-mental ferroelectric characterization and practical appli-cations have not yet been presented.Herein,firstly we experimentally confirmed its ferroelectric property via hysteresis loop measurement.The result showed a rema-nent polarization value of 10.20μC·cm^(-2) with low coer-cive electricfield of 6.45 kV·cm^(-1) at 20 Hz at room temperature,while the leakage current density(J)value was found to be 1.188 A·cm^(-2),which suggested the property of a larger remnant polarization with low coercive electricfield than current value if the compactness was strengthened.Then,the synergistic effect of ferroelectric and semiconductor was comparatively highlighted by the experiment of pollutant degradation.Within 30 min,methyl orange degradation efficiency had reached 30.73%only in the case of spontaneous polarization(electricity),while it could reach 67.58%under the effect of pre-po-larizedβ-CuGaO_(2)powder due to the modulating orienta-tion of ferroelectric domains.Once irradiated(light),it was up to 92%within 30 min;in comparison,it merely took 16 min up to 92%degradation efficiency under both illu-mination and pre-polarization.If without illumination,it was 92.01%with 30 min in the condition of ordinary ultrasonic vibration(force)while under both illumination and ultrasonic vibration,only 11 min was spent to reach 92.79%degradation efficiency.All these results felici-tously indicated thatβ-CuGaO_(2)had fascinating potential in energy harvesting(such as electricity,light,force)and transformation as wastewater environment remediation catalyst.展开更多
To upgrade the electric properties of lead-free piezoceramics,(1-x)(Ba_(0.98)Ca_(0.02)Ti_(0.94)Sn_(0.04)Zr_(0.02))O_(3)-xY_(2)O_(3)(abbreviated as(1-x)BCTSZ-xY,x=0 mol%,0.02 mol%,0.04 mol%,0.06 mol%,0.08 mol%and 0.1 m...To upgrade the electric properties of lead-free piezoceramics,(1-x)(Ba_(0.98)Ca_(0.02)Ti_(0.94)Sn_(0.04)Zr_(0.02))O_(3)-xY_(2)O_(3)(abbreviated as(1-x)BCTSZ-xY,x=0 mol%,0.02 mol%,0.04 mol%,0.06 mol%,0.08 mol%and 0.1 mol%)ceramics were successfully synthesized by traditional solid-state sintering method.The phase structure and microstructure of ceramics were investigated by X-ray diffraction(XRD),scanning electron microscopy(SEM)and piezoresponse force microscopyeramics(PFM).The electric properties of ceramics were researched through piezoelectric,dielectric and ferroelectric test instruments.The results show that all samples have pure perovskite structure and favorable electric properties.The optimal electric properties which especially include superior ferroelectric properties are gained when Y_(2)O_(3)content is 0.06 mol%(d_(33)=419 pC/N,k_(p)=52%,T_(c)=89.5℃,ε_(r)=26900,tanδ=2.86%,P_(r)=14.41μC/cm^(2),Ec=1.8 kV/cm).Moreover,the temperature-dependent dielectricity of samples shows apparent relaxor behavior under different frequencies.The Curie-Weiss law further proves that all samples are typical relaxor ferroelectrics,and the relaxor degree of samples decreases with increase of Y_(2)O_(3)content.In conclusion,Y_(2)O_(3)plays a significant role in enhancing electric properties of BCTSZ ceramics.展开更多
This paper reports the improvement of electrical,ferroelectric and endurance of Hf_(0.5)Zr_(0.5)O_(2)(HZO)thinfilm capacitors by implementing W electrode.The W/HZO/W capacitor shows excellent pristine 2 P_(r)values of...This paper reports the improvement of electrical,ferroelectric and endurance of Hf_(0.5)Zr_(0.5)O_(2)(HZO)thinfilm capacitors by implementing W electrode.The W/HZO/W capacitor shows excellent pristine 2 P_(r)values of 45.1 gC/cm^(2)at±6 V,which are much higher than those of TiN/HZO/W(34.4μC/cm^(2))and W/HZO/TiN(26.9μC/cm^(2))capacitors.Notably,the maximum initial 2 P_(r)value of W/HZO/W capacitor can reach as high as 57.9μC/cm^(2)at±7.5 V.These strong ferroelectric polarization effects are ascribed to the W electrode with a fairly low thermal expansion coefficient which provides a larger in-plane tensile strain compared with TiN electrode,allowing for enhancement of o-phase formation.Moreover,the W/HZO/W capacitor also exhibits higher endurance,smaller wake-up effect(10.1%)and superior fatigue properties up to 1.5×10^(10)cycles compared to the TiN/HZO/W and W/HZO/TiN capacitors.Such improvements of W/HZO/W capacitor are mainly due to the decreased leakage current by more than an order of magnitude compared to the W/HZO/TiN capacitor.These results demonstrate that capping electrode material plays an important role in the enhancement of o-phase formation,reduces oxygen vacancies,mitigates wake-up effect and improves reliability.展开更多
Hafnium-based ferroelectric films,remaining their ferroelectricity down to nanoscale thickness,present a promising application for low-power logic devices and nonvolatile memories.It has been appealing for researchers...Hafnium-based ferroelectric films,remaining their ferroelectricity down to nanoscale thickness,present a promising application for low-power logic devices and nonvolatile memories.It has been appealing for researchers to reduce the required temperature to obtain the ferroelectric phase in hafnium-based ferroelectric films for applications such as flexible and wearable electronics.This work demonstrates that a remanent polarization(P_(r))value of>5μC/cm^(2)can be obtained in asdeposited Hf_(0.5)Zr_(0.5)O_(2)(HZO)films that are fabricated by thermal atomic layer deposition(TALD)under low temperature of 250℃.The ferroelectric orthorhombic phase(o-phase)in the as-deposited HZO films is detected by scanning transmission electron microscopy(STEM).This low fabrication temperature further extends the compatibility of ferroelectric HZO films to flexible electronics and avoids the cost imposed by following high-temperature annealing treatments.展开更多
The discovery of ferroelectricity in HfO_(2) based materials reactivated the research on ferroelectric memory.However,the complete mechanism underlying its ferroelectricity remains to be fully elucidated.In this study...The discovery of ferroelectricity in HfO_(2) based materials reactivated the research on ferroelectric memory.However,the complete mechanism underlying its ferroelectricity remains to be fully elucidated.In this study,we conducted a systematic study on the microstructures and ferroelectric properties of Hf_(0.5)Zr_(0.5)O_(2)(HZO)thin films with various annealing rates in the rapid thermal annealing.It was observed that the HZO thin films with higher annealing rates demonstrate smaller grain size,reduced surface roughness and a higher portion of orthorhombic phase.Moreover,these films exhibited enhanced polarization values and better fatigue cycles compared to those treated with lower annealing rates.The grazing incidence x-ray diffraction measurements revealed the existence of tension stress in the HZO thin films,which was weakened with decreasing annealing rate.Our findings revealed that this internal stress,along with the stress originating from the top/bottom electrode,plays a crucial role in modulating the microstructure and ferroelectric properties of the HZO thin films.By carefully controlling the annealing rate,we could effectively regulate the tension stress within HZO thin films,thus achieving precise control over their ferroelectric properties.This work established a valuable pathway for tailoring the performance of HZO thin films for various applications.展开更多
The hysteresis loop changes of ferroelecric SrBi_2 Ta_2 O_9 (SBT) thin films(330nm) us the temperature of forming gas (5 percent hydrogen+95 percent nitrogen) annealing weremeasured when the annealing time was 1min an...The hysteresis loop changes of ferroelecric SrBi_2 Ta_2 O_9 (SBT) thin films(330nm) us the temperature of forming gas (5 percent hydrogen+95 percent nitrogen) annealing weremeasured when the annealing time was 1min and 10min. The selected annealing temperature was at 100deg C,200 deg C 250 deg C, 300 deg C, 350 deg C,400 deg C and 450 deg C, respectively. Our resultsshowed that the ferroelectric properties were easily destroyed and the leakage current changedabruptly when the SBT thin films were in their ferroelectric phase (<270 deg C). The space chargesat the grain boundary may take an important role' in absorption polarity molecular hydrogen when theSBT thin films were in the ferroelectric phase. The oxygen recovery experiments were also performedand investigated in this work.展开更多
Ferroelectric HfO_(2)has attracted much attention owing to its superior ferroelectricity at an ultra-thin thickness and good compatibility with Si-based complementary metal-oxide-semiconductor(CMOS)technology.However,...Ferroelectric HfO_(2)has attracted much attention owing to its superior ferroelectricity at an ultra-thin thickness and good compatibility with Si-based complementary metal-oxide-semiconductor(CMOS)technology.However,the crystallization of polar orthorhombic phase(o-phase)HfO_(2)is less competitive,which greatly limits the ferroelectricity of the as-obtained ferroelectric HfO_(2)thin films.Fortunately,the crystallization of o-phase HfO_(2)can be thermodynamically modulated via interfacial stress engineering.In this paper,the growth of improved ferroelectric Al doped HfO_(2)(HfO_(2):Al)thin films on(111)-oriented Si substrate has been reported.Structural analysis has suggested that nonpolar monoclinic HfO_(2):Al grown on(111)-oriented Si substrate suffered from a strong compressive strain,which promoted the crystallization of(111)-oriented o-phase HfO_(2)in the as-grown HfO_(2):Al thin films.In addition,the in-plane lattice of(111)-oriented Si substrate matches well with that of(111)-oriented o-phase HfO_(2),which further thermally stabilizes the o-phase HfO_(2).Accordingly,an improved ferroelectricity with a remnant polarization(2P_(r))of 26.7C/cm^(2) has been obtained.The results shown in this work provide a simple way toward the preparation of improved ferroelectric HfO_(2)thin films.展开更多
This paper reports that the Bi2WO6 ferroelectric ceramics with excess Bi2O3 of 0.0, 2.0, 3.5 and 5.0wt.% of the stoichiometric composition are prepared by the conventional solid-state reaction method. Their microstruc...This paper reports that the Bi2WO6 ferroelectric ceramics with excess Bi2O3 of 0.0, 2.0, 3.5 and 5.0wt.% of the stoichiometric composition are prepared by the conventional solid-state reaction method. Their microstructure, ferroelectric properties, the concentration and mobility of the defects have been analysed systematically. With increasing Bi content, the remnant polarization decreases, and the broken-down voltage increases. The optimum Bi excess, 3.5, lowers the oxygen vacancy concentration, while further Bi-addition brings about more defects. The activation energies fitted from cole-cole plots are 0.97 eV, 1.07 eV, 1.18 eV, and 1.33 eV, respectively. This suggests that the mobility of the defects is weakened by Bi-addition, which may be due to the increase of the ratio of the number of Bi2O2 layers to that of the oerovskite blocks.展开更多
Antibiotics have received increasing attention due to their potential adverse effects on aquatic life and human health.How to efficiently degrade them into harmless substances is a challenging subject.Ferroelectric ma...Antibiotics have received increasing attention due to their potential adverse effects on aquatic life and human health.How to efficiently degrade them into harmless substances is a challenging subject.Ferroelectric materials with a built-in electric field can offer a strong separation ability for the photoinducedcharge pairs and are now found to be used as photocatalysts.Herein,a series of different morphologies of SrBi_(2)Ta_(2)O_(9)ferroelectric photocatalysts with high antibiotic degradation efficiency have been successfully synthesized through a molten salt method.With the addition of KCl,SrBi_(2)Ta_(2)O_(9)(SBTO 3)with exposed(001)facets shows the most excellent photocatalytic activity for decomposing tetracycline(TC)and ciprofloxacin(CIP)under visible light illumination(λ>420 nm).The rate constants of SBTO 3 for TC and CIP degradation are 1.38×10^(–1)and 4.54×10^(–2)min^(–1),which are 18 and 138 times that of the unmodified sample,respectively.The enhancement of photocatalytic performance is mainly attributed to the spontaneous polarization electric field along the[001]direction which provides a strong driven force for the separation of photoinduced charges.The KPFM results also confirm that the superior photocatalytic activity is consistent with the big large surface potential changes before and after light irradiation.The possible degradation pathways and intermediates of TC and CIP were well analyzed by DFT calculation and LC-MS.The results highlight that morphology control of the ferroelectric materials exhibits enhanced photocatalytic performance for the degradation of the antibiotic.展开更多
Single phase 0.76(Bi_(0.5)Na_(0.5))TiO_(3)–0.24SrTiO_(3) ferroelectric ceramics have been synthesized with homogenous anatase and hierarchical rutile TiO_(2) raw reactants(BNST-A and BNST-R).Either calcined powder pe...Single phase 0.76(Bi_(0.5)Na_(0.5))TiO_(3)–0.24SrTiO_(3) ferroelectric ceramics have been synthesized with homogenous anatase and hierarchical rutile TiO_(2) raw reactants(BNST-A and BNST-R).Either calcined powder persists the microstructure characteristics of raw reactants.As the result,when the sintering temperature increases from 1000 to 1200℃,the average grain size and density of BNST-A increase from 0.49 to 1.48μm and 5.02 to 5.61 g/cm^(3),while those of BNST-R from 0.86 to 1.44μm and 5.37 to 5.61 g/cm^(3).BNST-A illustrates a predominant ergodic relaxor state,and BNST-R prefers a non-ergodic relaxor state,as evidenced by the distinct polarization-electric field loops and current-electric field curves.Especially,such a distinct ferroelectric state is independent of sintering temperature.It is believed that the special hierarchical microstructure of rutile TiO_(2) reactant is beneficial to form denser ceramics with larger grains,and thus suppresses the contributions of polar nanoregions and defect-induced built-in field to ferroelectric property,leading to non-ergodic relaxor state.This work clearly demonstrates the nonnegligible effects of TiO_(2) reactants on the microstructure and properties of BNST ferroelectric ceramics.展开更多
基金support from the Natural Science Foundation of Jiangsu Province(BK20220596)Innovative science and technology platform project of cooperation between Yangzhou City and Yangzhou University,China(No.YZ202026305)+1 种基金Natural Science Foundation of China(21922202,21673202 and 22272147)the Priority Academic Program Development of Jiangsu Higher Education Institutions.
文摘Intergrowth ferroelectric semiconductors with excellent spontaneous polarization field are highly promising piezo-photocatalytic candidate materials.In addition,developing structural design and revealing polarization enhancement in-depth mechanism are top priorities.Herein,we introduce the intergrowth ferroelectrics Bi_(7)Ti_(4)NbO_(21)thin-layer nanosheets for piezo-photocatalytic CO_(2)reduction.Density functional theory(DFT)calculations indicate that interlayer lattice mismatch leads to increased tilting and rotation angle of Ti/NbO_(6)octahedra on perovskite-like layers,serving as the main reason for increased polarization.Furthermore,the tilting and rotation angle of the interlayer octahedron further increase under stress,suggesting a stronger driving force generated to facilitate charge carrier separation efficiency.Meanwhile,Bi_(7)Ti_(4)NbO_(21)nanosheets provide abundant active sites to effectively adsorb CO_(2)and acquire sensitive stress response,thereby presenting synergistically advanced piezo-photocatalytic CO_(2)reduction activity with a high CO generation rate of 426.97μmol g^(-1)h^(-1).Our work offers new perspectives and directions for initiating and investigating the mechanisms of high-performance intergrowth piezo-photocatalysts.
基金supported by the National Natural Science Foundation of China(Grant Nos.52125204,52250281,52422209,92163210,and U21A2066)the Na-tional Key Research and Development Program of China(Grant Nos.2024YFA1208601,2022YFB3807602,and 2022YFB3807604).
文摘Doped HfO_(2)as an emerging ferroelectric material,holds considerable promise for non-volatile memory applications.Epitaxial growth of doped HfO_(2)thin films is widely adopted as an effective technique for revealing the intrinsic ferroelectric properties.In this study,based on systematic structural,chemical and electrical investigations,the influences of Mn doping and substrate orientation on ferroelectric properties of Mn-doped HfO_(2)epitaxial thin films are investigated.The results demonstrate that Mn-doped HfO_(2)thin films with orthorhombic phase can be epitaxially grown along[111]out-of-plane direction on both SrTiO_(3)(001)and(110)substrates,and 10%Mn-doping significantly stabilizes the orthorhombic polar phase and enhances the ferroelectric polarization.Interestingly,compared to the films on SrTiO_(3)(001)substrate,the better crystallinity and reduction of oxygen vacancy amount in Mn-doped HfO_(2)films grown on the SrTiO_(3)(110)substrate are observed,which enhance the remanent polarization and reduce the coercive field.It provides an effective approach for the controllable regulation of defects and the enhancement of intrinsic ferroelectricity in HfO_(2)-based materials.
基金supported by the National Key Research and Development Programs-Intergovernmental International Cooperation in Science and Technology Innovation Project(Grant No.2022YFE0118400)the Natural Science Foundation of Hunan Province(2023JJ50132)+1 种基金Shenzhen Science and Technology Innovation Committee(Grants Nos.JCYJ20220818100211025,and KCXST20221021111616039)Shenzhen Science and Technology Program(No.20231128110928003)。
文摘The introduction of two-dimensional(2D)perovskite layers on top of three-dimensional(3D)perovskite films enhances the performance and stability of perovskite solar cells(PSCs).However,the electronic effect of the spacer cation and the quality of the 2D capping layer are critical factors in achieving the required results.In this study,we compared two fluorinated salts:4-(trifluoromethyl)benzamidine hydrochloride(4TF-BA·HCl)and 4-fluorobenzamidine hydrochloride(4F-BA·HCl)to engineer the 3D/2D perovskite films.Surprisingly,4F-BA formed a high-performance 3D/2D heterojunction,while4TF-BA produced an amorphous layer on the perovskite films.Our findings indicate that the balanced intramolecular charge polarization,which leads to effective hydrogen bonding,is more favorable in 4F-BA than in 4TF-BA,promoting the formation of a crystalline 2D perovskite.Nevertheless,4TF-BA managed to improve efficiency to 24%,surpassing the control device,primarily due to the natural passivation capabilities of benzamidine.Interestingly,the devices based on 4F-BA demonstrated an efficiency exceeding 25%with greater longevity under various storage conditions compared to 4TF-BA-based and the control devices.
基金supported by the IITP(Institute of Information & Communications Technology Planning & Evaluation)-ITRC(Information Technology Research Center) grant funded by the Korea government(Ministry of Science and ICT) (IITP-2025-RS-2024-00437191, and RS-2025-02303505)partly supported by the Korea Basic Science Institute (National Research Facilities and Equipment Center) grant funded by the Ministry of Education. (No. 2022R1A6C101A774)the Deanship of Research and Graduate Studies at King Khalid University, Saudi Arabia, through Large Research Project under grant number RGP-2/527/46
文摘The growing global energy demand and worsening climate change highlight the urgent need for clean,efficient and sustainable energy solutions.Among emerging technologies,atomically thin two-dimensional(2D)materials offer unique advantages in photovoltaics due to their tunable optoelectronic properties,high surface area and efficient charge transport capabilities.This review explores recent progress in photovoltaics incorporating 2D materials,focusing on their application as hole and electron transport layers to optimize bandgap alignment,enhance carrier mobility and improve chemical stability.A comprehensive analysis is presented on perovskite solar cells utilizing 2D materials,with a particular focus on strategies to enhance crystallization,passivate defects and improve overall cell efficiency.Additionally,the application of 2D materials in organic solar cells is examined,particularly for reducing recombination losses and enhancing charge extraction through work function modification.Their impact on dye-sensitized solar cells,including catalytic activity and counter electrode performance,is also explored.Finally,the review outlines key challenges,material limitations and performance metrics,offering insight into the future development of nextgeneration photovoltaic devices encouraged by 2D materials.
基金supported by the National Key Research and Development Program of China (Grant Nos. 2017YFA0 205004, 2018YFA03066004, and 2016YFA0301700)the National Natural Science Foundation of China (Grant Nos. 11674295 and 11774328)+3 种基金the Fundamental Research Funds for the Central Universities (Grant No. WK2340000082)Anhui Initiative in Quantum Information Technologies (Grant No. AHY170000)the USTC start-up fundingthe China Government Youth 1000-Plan Talent Program
文摘Room temperature ferroelectric thin films are the key element of high-density nonvolatile memories in modern electronics. However, with the further miniaturization of the electronic devices beyond the Moore’s law, conventional ferroelectrics suffer great challenge arising from the critical thickness effect, where the ferroelectricity is unstable if the film thickness is reduced to nanometer or single atomic layer limit. Two-dimensional(2D) materials, thanks to their stable layered structure, saturate interfacial chemistry, weak interlayer couplings, and the benefit of preparing stable ultra-thin film at 2D limit, are promising for exploring 2D ferroelectricity and related device applications. Therefore, it provides an effective approach to overcome the limitation in conventional ferroelectrics with the study of 2D ferroelectricity in van der Waals(vdW) materials. In this review article,we briefly introduce recent progresses on 2D ferroelectricity in layered vdW materials. We will highlight the study on atomically thin α-In2Se3, which is an emergent ferroelectric semiconductor with the coupled in-plane and out-of-plane ferroelectricity. Furthermore, two prototype ferroelectric devices based on ferroelectric α-In2Se3 will also be reviewed.
基金Project(cstc2020jcyj-msxm X0930) supported by the Natural Science Foundation of Chongqing,ChinaProject(KJQN201901522) supported by Technological Research Program of Chongqing Municipal Education Commission,ChinaProject(cx2020068) supported by the Venture&Innovation Support Program for Chongqing Overseas Returnees,China。
文摘A catalyst of ferroelectric-BaTiO_(3)@photoelectric-TiO_(2) nanohybrids(BaTiO_(3)@TiO_(2))with enhanced photocatalytic activity was synthesized via a hydrolysis precipitation combined with a hydrothermal approach.Compared to pure TiO_(2),pure BaTiO_(3) and BaTiO_(3)/TiO_(2) physical mixture,the heterostructured BaTiO_(3)@TiO_(2) exhibits significantly improved photocatalytic activity and cycling stability in decomposing Rhodamine B(RhB)and the degradation efficiency is 1.7 times higher than pure TiO_(2) and 7.2 times higher than pure BaTiO_(3).These results are mainly attributed to the synergy effect of photoelectric TiO_(2),ferroelectric-BaTiO_(3) and the rationally designed interfacial structure.The mesoporous microstructure of TiO_(2) is of a high specific area and enables excellent photocatalytic activity.The ferroelectric polarization induced built-in electric field in BaTiO_(3) nanoparticles,and the intimate interfacial interactions at the interface of BaTiO_(3) and TiO_(2) are effective in driving the separation and transport of photogenerated charge carriers.This strategy will stimulate the design of heterostructured photocatalysts with outstanding photocatalytic performance via interface engineering.
基金financially supported by the Natural Foundation of Jilin Province (No. 190201106JC)the Project for Science & Technology Development of Jilin Province (Nos. 20200602021ZP and 20200801048GH)。
文摘As a narrow band gap semiconductor,wurtziteβ-CuGaO_(2)has drawn increasing attention in the area of solar energy.Althoughβ-CuGaO_(2)has been theoretically predicted to possess ferroelectric polarization,its experi-mental ferroelectric characterization and practical appli-cations have not yet been presented.Herein,firstly we experimentally confirmed its ferroelectric property via hysteresis loop measurement.The result showed a rema-nent polarization value of 10.20μC·cm^(-2) with low coer-cive electricfield of 6.45 kV·cm^(-1) at 20 Hz at room temperature,while the leakage current density(J)value was found to be 1.188 A·cm^(-2),which suggested the property of a larger remnant polarization with low coercive electricfield than current value if the compactness was strengthened.Then,the synergistic effect of ferroelectric and semiconductor was comparatively highlighted by the experiment of pollutant degradation.Within 30 min,methyl orange degradation efficiency had reached 30.73%only in the case of spontaneous polarization(electricity),while it could reach 67.58%under the effect of pre-po-larizedβ-CuGaO_(2)powder due to the modulating orienta-tion of ferroelectric domains.Once irradiated(light),it was up to 92%within 30 min;in comparison,it merely took 16 min up to 92%degradation efficiency under both illu-mination and pre-polarization.If without illumination,it was 92.01%with 30 min in the condition of ordinary ultrasonic vibration(force)while under both illumination and ultrasonic vibration,only 11 min was spent to reach 92.79%degradation efficiency.All these results felici-tously indicated thatβ-CuGaO_(2)had fascinating potential in energy harvesting(such as electricity,light,force)and transformation as wastewater environment remediation catalyst.
基金Project supported by the Guizhou Province Graduate Research Fund(YJSCXJH2020029)Specialized Funds from Industry and Information Technology Department of Guizhou Province(2016056)+1 种基金the National Natural Science Foundation of China(51602066)High-level Innovative Talents Plan of Guizhou Province((2015)4009)。
文摘To upgrade the electric properties of lead-free piezoceramics,(1-x)(Ba_(0.98)Ca_(0.02)Ti_(0.94)Sn_(0.04)Zr_(0.02))O_(3)-xY_(2)O_(3)(abbreviated as(1-x)BCTSZ-xY,x=0 mol%,0.02 mol%,0.04 mol%,0.06 mol%,0.08 mol%and 0.1 mol%)ceramics were successfully synthesized by traditional solid-state sintering method.The phase structure and microstructure of ceramics were investigated by X-ray diffraction(XRD),scanning electron microscopy(SEM)and piezoresponse force microscopyeramics(PFM).The electric properties of ceramics were researched through piezoelectric,dielectric and ferroelectric test instruments.The results show that all samples have pure perovskite structure and favorable electric properties.The optimal electric properties which especially include superior ferroelectric properties are gained when Y_(2)O_(3)content is 0.06 mol%(d_(33)=419 pC/N,k_(p)=52%,T_(c)=89.5℃,ε_(r)=26900,tanδ=2.86%,P_(r)=14.41μC/cm^(2),Ec=1.8 kV/cm).Moreover,the temperature-dependent dielectricity of samples shows apparent relaxor behavior under different frequencies.The Curie-Weiss law further proves that all samples are typical relaxor ferroelectrics,and the relaxor degree of samples decreases with increase of Y_(2)O_(3)content.In conclusion,Y_(2)O_(3)plays a significant role in enhancing electric properties of BCTSZ ceramics.
基金financially supported by the National Natural Science Foundation of China(No.51872099)the Hong Kong Research Grant Council(No.15300619)+2 种基金the Science and Technology Program of Guangzhou(No.201905-0001)the Guangdong Science and Technology Project-International Cooperation(No.2021A0505030064)financial support by the Hong Kong Scholars Program(No.XJ2019006)。
文摘This paper reports the improvement of electrical,ferroelectric and endurance of Hf_(0.5)Zr_(0.5)O_(2)(HZO)thinfilm capacitors by implementing W electrode.The W/HZO/W capacitor shows excellent pristine 2 P_(r)values of 45.1 gC/cm^(2)at±6 V,which are much higher than those of TiN/HZO/W(34.4μC/cm^(2))and W/HZO/TiN(26.9μC/cm^(2))capacitors.Notably,the maximum initial 2 P_(r)value of W/HZO/W capacitor can reach as high as 57.9μC/cm^(2)at±7.5 V.These strong ferroelectric polarization effects are ascribed to the W electrode with a fairly low thermal expansion coefficient which provides a larger in-plane tensile strain compared with TiN electrode,allowing for enhancement of o-phase formation.Moreover,the W/HZO/W capacitor also exhibits higher endurance,smaller wake-up effect(10.1%)and superior fatigue properties up to 1.5×10^(10)cycles compared to the TiN/HZO/W and W/HZO/TiN capacitors.Such improvements of W/HZO/W capacitor are mainly due to the decreased leakage current by more than an order of magnitude compared to the W/HZO/TiN capacitor.These results demonstrate that capping electrode material plays an important role in the enhancement of o-phase formation,reduces oxygen vacancies,mitigates wake-up effect and improves reliability.
基金Project supported by the National Key Research and Development Program of China(Grant No.2021YFA1200700)the National Natural Science Foundation of China(Grant Nos.T2222025 and 62174053)+5 种基金the Open Research Projects of Zhejiang Laboratory(Grant No.2021MD0AB03)the Shanghai Science and Technology Innovation Action Plan(Grant Nos.21JC1402000 and 21520714100)the Guangdong Provincial Key Laboratory Program(Grant No.2021B1212040001)the Fundamental Research Funds for the Central Universitiessupport from the Zuckerman STEM Leadership ProgramPazy Research Foundation(Grant No.149-2020)。
文摘Hafnium-based ferroelectric films,remaining their ferroelectricity down to nanoscale thickness,present a promising application for low-power logic devices and nonvolatile memories.It has been appealing for researchers to reduce the required temperature to obtain the ferroelectric phase in hafnium-based ferroelectric films for applications such as flexible and wearable electronics.This work demonstrates that a remanent polarization(P_(r))value of>5μC/cm^(2)can be obtained in asdeposited Hf_(0.5)Zr_(0.5)O_(2)(HZO)films that are fabricated by thermal atomic layer deposition(TALD)under low temperature of 250℃.The ferroelectric orthorhombic phase(o-phase)in the as-deposited HZO films is detected by scanning transmission electron microscopy(STEM).This low fabrication temperature further extends the compatibility of ferroelectric HZO films to flexible electronics and avoids the cost imposed by following high-temperature annealing treatments.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.62174059 and 52250281)the Science and Technology Projects of Guangzhou Province of China (Grant No.202201000008)+1 种基金the Guangdong Science and Technology Project-International Cooperation (Grant No.2021A0505030064)the Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials (Grant No.2020B1212060066)。
文摘The discovery of ferroelectricity in HfO_(2) based materials reactivated the research on ferroelectric memory.However,the complete mechanism underlying its ferroelectricity remains to be fully elucidated.In this study,we conducted a systematic study on the microstructures and ferroelectric properties of Hf_(0.5)Zr_(0.5)O_(2)(HZO)thin films with various annealing rates in the rapid thermal annealing.It was observed that the HZO thin films with higher annealing rates demonstrate smaller grain size,reduced surface roughness and a higher portion of orthorhombic phase.Moreover,these films exhibited enhanced polarization values and better fatigue cycles compared to those treated with lower annealing rates.The grazing incidence x-ray diffraction measurements revealed the existence of tension stress in the HZO thin films,which was weakened with decreasing annealing rate.Our findings revealed that this internal stress,along with the stress originating from the top/bottom electrode,plays a crucial role in modulating the microstructure and ferroelectric properties of the HZO thin films.By carefully controlling the annealing rate,we could effectively regulate the tension stress within HZO thin films,thus achieving precise control over their ferroelectric properties.This work established a valuable pathway for tailoring the performance of HZO thin films for various applications.
基金This work sponsored by Motorola SPS Digital DNA Laboratories. It is also supported by a grant for State Key Program for Basic Research of China. We would like to thank Dr. Peir Y. Chu of Motorola SPS for his great help, useful advice and discussion.
文摘The hysteresis loop changes of ferroelecric SrBi_2 Ta_2 O_9 (SBT) thin films(330nm) us the temperature of forming gas (5 percent hydrogen+95 percent nitrogen) annealing weremeasured when the annealing time was 1min and 10min. The selected annealing temperature was at 100deg C,200 deg C 250 deg C, 300 deg C, 350 deg C,400 deg C and 450 deg C, respectively. Our resultsshowed that the ferroelectric properties were easily destroyed and the leakage current changedabruptly when the SBT thin films were in their ferroelectric phase (<270 deg C). The space chargesat the grain boundary may take an important role' in absorption polarity molecular hydrogen when theSBT thin films were in the ferroelectric phase. The oxygen recovery experiments were also performedand investigated in this work.
基金Research Fund of Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Tech-nology,China(Grant No.2020B1212030010)Project of Faculty of Agricultural Equipment of Jiangsu University (Grant No. NZXB20210202) are acknowledged。
文摘Ferroelectric HfO_(2)has attracted much attention owing to its superior ferroelectricity at an ultra-thin thickness and good compatibility with Si-based complementary metal-oxide-semiconductor(CMOS)technology.However,the crystallization of polar orthorhombic phase(o-phase)HfO_(2)is less competitive,which greatly limits the ferroelectricity of the as-obtained ferroelectric HfO_(2)thin films.Fortunately,the crystallization of o-phase HfO_(2)can be thermodynamically modulated via interfacial stress engineering.In this paper,the growth of improved ferroelectric Al doped HfO_(2)(HfO_(2):Al)thin films on(111)-oriented Si substrate has been reported.Structural analysis has suggested that nonpolar monoclinic HfO_(2):Al grown on(111)-oriented Si substrate suffered from a strong compressive strain,which promoted the crystallization of(111)-oriented o-phase HfO_(2)in the as-grown HfO_(2):Al thin films.In addition,the in-plane lattice of(111)-oriented Si substrate matches well with that of(111)-oriented o-phase HfO_(2),which further thermally stabilizes the o-phase HfO_(2).Accordingly,an improved ferroelectricity with a remnant polarization(2P_(r))of 26.7C/cm^(2) has been obtained.The results shown in this work provide a simple way toward the preparation of improved ferroelectric HfO_(2)thin films.
基金supported by the National Natural Science Foundation of China (Grant No 10274066)the Natural Science Foundation of Jiangsu Province, China (Grant No BK2005052)
文摘This paper reports that the Bi2WO6 ferroelectric ceramics with excess Bi2O3 of 0.0, 2.0, 3.5 and 5.0wt.% of the stoichiometric composition are prepared by the conventional solid-state reaction method. Their microstructure, ferroelectric properties, the concentration and mobility of the defects have been analysed systematically. With increasing Bi content, the remnant polarization decreases, and the broken-down voltage increases. The optimum Bi excess, 3.5, lowers the oxygen vacancy concentration, while further Bi-addition brings about more defects. The activation energies fitted from cole-cole plots are 0.97 eV, 1.07 eV, 1.18 eV, and 1.33 eV, respectively. This suggests that the mobility of the defects is weakened by Bi-addition, which may be due to the increase of the ratio of the number of Bi2O2 layers to that of the oerovskite blocks.
基金financially supported by the National Key Research and Development Project of China(No.2019YFC1803404)the National Natural Science Foundation of China(No.51772325)+3 种基金the Natural Science Foundation of Guangdong Province(Nos.2021A1515010375,2021A1515010390)the Excellent Young Talents Discipline Construction Project of Jinan University(No.2019QNGG19)the Fundamental Research Funds for the Central Universities(No.21621401)the Open Fund of Guangdong Provincial Key Laboratory of Functional Supramolecular Coordination Materials and Applications(No.2020B121201005)。
文摘Antibiotics have received increasing attention due to their potential adverse effects on aquatic life and human health.How to efficiently degrade them into harmless substances is a challenging subject.Ferroelectric materials with a built-in electric field can offer a strong separation ability for the photoinducedcharge pairs and are now found to be used as photocatalysts.Herein,a series of different morphologies of SrBi_(2)Ta_(2)O_(9)ferroelectric photocatalysts with high antibiotic degradation efficiency have been successfully synthesized through a molten salt method.With the addition of KCl,SrBi_(2)Ta_(2)O_(9)(SBTO 3)with exposed(001)facets shows the most excellent photocatalytic activity for decomposing tetracycline(TC)and ciprofloxacin(CIP)under visible light illumination(λ>420 nm).The rate constants of SBTO 3 for TC and CIP degradation are 1.38×10^(–1)and 4.54×10^(–2)min^(–1),which are 18 and 138 times that of the unmodified sample,respectively.The enhancement of photocatalytic performance is mainly attributed to the spontaneous polarization electric field along the[001]direction which provides a strong driven force for the separation of photoinduced charges.The KPFM results also confirm that the superior photocatalytic activity is consistent with the big large surface potential changes before and after light irradiation.The possible degradation pathways and intermediates of TC and CIP were well analyzed by DFT calculation and LC-MS.The results highlight that morphology control of the ferroelectric materials exhibits enhanced photocatalytic performance for the degradation of the antibiotic.
基金supported by the National Key R&D Program of China(No.2020YFA0711504)the National Natural Science Foundation of China(Nos.12174179,51721001)+1 种基金the Natural Science Foundation of Jiangsu Province(No.BK20221251)the Dengfeng B project of Nanjing University。
文摘Single phase 0.76(Bi_(0.5)Na_(0.5))TiO_(3)–0.24SrTiO_(3) ferroelectric ceramics have been synthesized with homogenous anatase and hierarchical rutile TiO_(2) raw reactants(BNST-A and BNST-R).Either calcined powder persists the microstructure characteristics of raw reactants.As the result,when the sintering temperature increases from 1000 to 1200℃,the average grain size and density of BNST-A increase from 0.49 to 1.48μm and 5.02 to 5.61 g/cm^(3),while those of BNST-R from 0.86 to 1.44μm and 5.37 to 5.61 g/cm^(3).BNST-A illustrates a predominant ergodic relaxor state,and BNST-R prefers a non-ergodic relaxor state,as evidenced by the distinct polarization-electric field loops and current-electric field curves.Especially,such a distinct ferroelectric state is independent of sintering temperature.It is believed that the special hierarchical microstructure of rutile TiO_(2) reactant is beneficial to form denser ceramics with larger grains,and thus suppresses the contributions of polar nanoregions and defect-induced built-in field to ferroelectric property,leading to non-ergodic relaxor state.This work clearly demonstrates the nonnegligible effects of TiO_(2) reactants on the microstructure and properties of BNST ferroelectric ceramics.
