随着摩尔定律指引下的晶体管微缩逼近物理极限,先进封装技术通过系统微型化与异构集成,成为突破芯片性能瓶颈的关键路径。作为先进封装的核心分支,2.5D封装通过硅/玻璃中介层实现高密度互连与多芯片异构集成,兼具高带宽、低延迟和小型...随着摩尔定律指引下的晶体管微缩逼近物理极限,先进封装技术通过系统微型化与异构集成,成为突破芯片性能瓶颈的关键路径。作为先进封装的核心分支,2.5D封装通过硅/玻璃中介层实现高密度互连与多芯片异构集成,兼具高带宽、低延迟和小型化优势,广泛应用于人工智能、高性能计算及移动电子领域。系统阐述了2.5D封装的核心结构(如Co Wo S、EMIB和I-Cube)及其技术特征,重点剖析了Chiplet模块化设计、硅通孔(TSV)工艺优化、微凸点可靠性提升、铜-铜直接键合界面工程以及再布线层多物理场协同设计等关键技术的最新进展。未来研究需聚焦低成本玻璃基板、原子层沉积技术抑制界面氧化以及多物理场协同设计等方面,以突破良率和散热瓶颈,推动2.5D封装在后摩尔时代高算力场景中的广泛应用。展开更多
Two-dimensional transition metal dichalcogenides(TMDs)have shown great potential for application in the next generation of electronics and optoelectronics due to their atomically thin thickness,tunable band gap,and st...Two-dimensional transition metal dichalcogenides(TMDs)have shown great potential for application in the next generation of electronics and optoelectronics due to their atomically thin thickness,tunable band gap,and strong light-matter interaction.However,their practical application is still limited by challenges such as the constraints of high-temperature synthesis processes,compatibility issues of p-type/n-type doping strategies,and insufficient nanoscale patterning accuracy.Plasma treatment has become a key technology to break through these bottlenecks with its unique advantages such as low-temperature operation capability,generation of highly active reactive species and precise controllability of multiple parameters.This review comprehensively reviews the latest progress in plasma engineering of TMDs(MoS_(2),WS_(2),WSe_(2),etc.)based on a systematic“fundamental process-property modulation-device innovation”framework.The key plasma technologies are highlighted:plasma-enhanced chemical vapor deposition(PECVD)for low-temperature growth,bidirectional doping achieved through active species regulation,atomic layer precision etching,and defect engineering.The regulation mechanism of plasma on the intrinsic properties of materials is systematically analyzed,including electronic structure modification,optical property optimization(such as photoluminescence enhancement)and structural feature evolution.It then reveals how plasma technology promotes device innovation:achieving customizable structures(p-n junctions,sub-10 nanometer channels),optimizing interface properties(reducing contact resistance,integrating high-k dielectrics),and significantly improving the performance of gas sensors,photodetectors and neuromorphic computing systems.Finally,this article looks forward to future research directions,emphasizing that plasma technology is a versatile and indispensable platform for promoting TMDs towards practical applications.展开更多
This study examines the “V + Dào” construction as a state change event through the lens of the Event Integration Hypothesis. It focuses on how these constructions represent state changes, exploring distinctions...This study examines the “V + Dào” construction as a state change event through the lens of the Event Integration Hypothesis. It focuses on how these constructions represent state changes, exploring distinctions between “change” and “stasis”. Using a corpus-based approach, the analysis covers the semantic and syntactic features of “V + Dào” constructions and their event integration patterns. The findings highlight the distribution of agency, animacy, and support relations in state change events, emphasizing the complex interaction of internal and external event integrations and their correlation with the conceptual primitives of change and transition. This study offers insights into the lexicalization and grammaticalization processes of the “V + Dào” construction, and potentially the broader verb-complement constructions in Mandarin.展开更多
文摘随着摩尔定律指引下的晶体管微缩逼近物理极限,先进封装技术通过系统微型化与异构集成,成为突破芯片性能瓶颈的关键路径。作为先进封装的核心分支,2.5D封装通过硅/玻璃中介层实现高密度互连与多芯片异构集成,兼具高带宽、低延迟和小型化优势,广泛应用于人工智能、高性能计算及移动电子领域。系统阐述了2.5D封装的核心结构(如Co Wo S、EMIB和I-Cube)及其技术特征,重点剖析了Chiplet模块化设计、硅通孔(TSV)工艺优化、微凸点可靠性提升、铜-铜直接键合界面工程以及再布线层多物理场协同设计等关键技术的最新进展。未来研究需聚焦低成本玻璃基板、原子层沉积技术抑制界面氧化以及多物理场协同设计等方面,以突破良率和散热瓶颈,推动2.5D封装在后摩尔时代高算力场景中的广泛应用。
基金supported by the National Science Foundation of China(Nos.62304151,62204170,and 62474124)the Natural Science Foundation of Tianjin(No.24JCQNJC00520)+3 种基金the China Postdoctoral Science Foundation(No.2023M742585)the Open Project of State Key Laboratory of Transducer Technology(No.SKT2208)the open research of Songshan Lake Materials Laboratory(No.2023SLABFK07)the State Key Laboratory of Fluid Power and Mechatronic Systems(No.GZKF-202327).
文摘Two-dimensional transition metal dichalcogenides(TMDs)have shown great potential for application in the next generation of electronics and optoelectronics due to their atomically thin thickness,tunable band gap,and strong light-matter interaction.However,their practical application is still limited by challenges such as the constraints of high-temperature synthesis processes,compatibility issues of p-type/n-type doping strategies,and insufficient nanoscale patterning accuracy.Plasma treatment has become a key technology to break through these bottlenecks with its unique advantages such as low-temperature operation capability,generation of highly active reactive species and precise controllability of multiple parameters.This review comprehensively reviews the latest progress in plasma engineering of TMDs(MoS_(2),WS_(2),WSe_(2),etc.)based on a systematic“fundamental process-property modulation-device innovation”framework.The key plasma technologies are highlighted:plasma-enhanced chemical vapor deposition(PECVD)for low-temperature growth,bidirectional doping achieved through active species regulation,atomic layer precision etching,and defect engineering.The regulation mechanism of plasma on the intrinsic properties of materials is systematically analyzed,including electronic structure modification,optical property optimization(such as photoluminescence enhancement)and structural feature evolution.It then reveals how plasma technology promotes device innovation:achieving customizable structures(p-n junctions,sub-10 nanometer channels),optimizing interface properties(reducing contact resistance,integrating high-k dielectrics),and significantly improving the performance of gas sensors,photodetectors and neuromorphic computing systems.Finally,this article looks forward to future research directions,emphasizing that plasma technology is a versatile and indispensable platform for promoting TMDs towards practical applications.
文摘This study examines the “V + Dào” construction as a state change event through the lens of the Event Integration Hypothesis. It focuses on how these constructions represent state changes, exploring distinctions between “change” and “stasis”. Using a corpus-based approach, the analysis covers the semantic and syntactic features of “V + Dào” constructions and their event integration patterns. The findings highlight the distribution of agency, animacy, and support relations in state change events, emphasizing the complex interaction of internal and external event integrations and their correlation with the conceptual primitives of change and transition. This study offers insights into the lexicalization and grammaticalization processes of the “V + Dào” construction, and potentially the broader verb-complement constructions in Mandarin.
