As artificial intelligence and big data become increasingly prevalent, resistive random-access memory (RRAM) has become one of the most promising alternatives for storing massive amounts of data. In this study, we emp...As artificial intelligence and big data become increasingly prevalent, resistive random-access memory (RRAM) has become one of the most promising alternatives for storing massive amounts of data. In this study, we employed high-quality crystalline TiN/Al_(2)O_(3)/BaTiO_(3)/Pt RRAM with an optimized thin Al_(2)O_(3) interlayer around 12 nm thick prepared using atomic layer deposition since the thickness of the interlayer affects the memory window size. After insertion of the Al_(2)O_(3) interlayer, the novel RRAM exhibited outstanding uniform resistive switching voltage and the ON/OFF memory window drastically increased from 10 to 103 without any discernible decline in performance. Moreover, the low-resistance state and high-resistance state operating current values decreased by almost one order and three orders of magnitude, respectively, thereby decreasing the power consumption for the RESET and SET processes by more than three and almost one order of magnitude, respectively. The device also exhibits multilevel resistive switching behavior when varying the applied voltage. Finally, we also developed a 6 6 crossbar array which demonstrated consistent and reliable resistive switching behavior with minimal variation. Hence, our approach holds great promise for producing state-of-the-art non-volatile resistive switching devices.展开更多
This study investigates the impact of oxide bottom electrode(BE)material and orientation on the resistive switching(RS)characteristics of Al/ZrO_(2)-based ReRAM devices.Devices with different oxide BEs,including(400)-...This study investigates the impact of oxide bottom electrode(BE)material and orientation on the resistive switching(RS)characteristics of Al/ZrO_(2)-based ReRAM devices.Devices with different oxide BEs,including(400)-and(222)-oriented ITO BEs deposited under pure argon and argon–oxygen(20%O_(2))sputtering atmospheres,as well as SrRuO_(3)(SRO),show distinct RS behaviors.The Al/ZrO_(2)/(400)-ITO and Al/ZrO_(2)/SRO devices demonstrate stable bipolar RS performance,with(400)-ITO enabling an abrupt reset process,a wider memory window(>10^(4)),and superior stability,while SRO devices exhibit gradual reset transitions with lower power consumption.Furthermore,the crystallographic orientation control applied to ITO BE significantly affects the V_(O) dynamics and RS performance,with(222)-ITO devices exhibiting irreversible RS behavior.It is irrefutable that BE material and its orientation can strongly influence RS performance by modulating the V_(O) dynamics,electric field distribution,and conductive filament behavior.These findings underscore the importance of BE properties in optimizing ReRAM performance and provide valuable guidance for the development of high-efficiency memory devices.展开更多
Cu metal and its oxides have attracted much attention for photocatalytic CO_(2)reduction reaction(CO_(2)RR),but the stability and effects of Cu oxidation states on CO_(2)RR are not fully understood.Cu^(x+)/Cu^(0)-load...Cu metal and its oxides have attracted much attention for photocatalytic CO_(2)reduction reaction(CO_(2)RR),but the stability and effects of Cu oxidation states on CO_(2)RR are not fully understood.Cu^(x+)/Cu^(0)-loaded graphitic carbon nitride(g-C_(3)N_(4))heterojunctions(Cu-CuO_(x)/g-C_(3)N_(4))are fabricated via a stepwise calcination method for efficient photocatalytic CO_(2)RR.Cu_(2)O is the main component of Cu-CuO_(x)and the mixed valence Cu includes Cu^(0),Cu^(+),and Cu^(2+),which play the role of charge trapping sites and redox catalytic centers during the photocatalytic CO_(2)RR process.The main products were CO and CH_(4)for the CO_(2)RR with production rates of 14.45 and 0.66μmol g^(-1)h^(-1)for CO and CH_(4),which were higher than those for g-C_(3)N_(4)and Cu-CuO_(x),respectively.This photocatalytic CO_(2)RR performance is attributed to the ultrafast switching of“Cu^(x+)−Cu^(0)”and e_(CB^(−))/h_(VB^(+))trapping transformation in Cu-CuO_(x)benefited from the built-in IEF between Cu-CuO_(x)and g-C_(3)N_(4),increasing the efficient photogenerated e_(CB^(−)),and enabling the stability of Cu-CuO_(x)/g-C_(3)N_(4).Cu^(x+)adsorbed by H_(2)O works as the electron trapping site to change to Cu^(0)and switch to the hole trapping site;Cu^(0)works as the hole trapping site to change to Cu^(x+)and switch to the electron trapping site,causing the CO_(2)RR of the adsorbed CO_(2).Moreover,the coordinated Cu^(0)and Cu^(+)species facilitate the activation of the adsorbed CO_(2)and^(∗)CO generation,these adsorbed^(∗)CO on Cu^(0)and Cu^(+)detected by in-situ DRIFTS quickly transformed to^(∗)CHO with a lower energy barrier benefited from the mixed Cu^(0)/Cu^(+)active sites during CORR to produce CH_(4).This finding provides a new insight into the influence of mixed valence Cu during photocatalytic CO_(2)RR.展开更多
Based on the nonlinear Mohr-Coulomb failure criterion and an associated flow rule,a kinematic admissible velocity field of failure mechanism of the 2-layer soil above a shallow horizontal strip anchor plate is constru...Based on the nonlinear Mohr-Coulomb failure criterion and an associated flow rule,a kinematic admissible velocity field of failure mechanism of the 2-layer soil above a shallow horizontal strip anchor plate is constructed.The ultimate pull-out force and its corresponding failure mechanism through the upper bound limit analysis according to a variation principle are deduced.When the 2-layer overlying soil is degraded into single-layer soil,the model of ultimate pullout force could also be degraded into the model of single-layer soil.And the comparison between results of single-layer soil variation method and those calculated by rigid limit analysis method proves the correctness of our method.Based on that,the influence of changes of geotechnical parameters on ultimate pullout forces and failure mechanism of a shallow horizontal strip anchor with the 2-layer soil above are analyzed.The results show that the ultimate pull-out force and failure mechanism of a shallow horizontal strip anchor with the 2-layer soil above are affected by the nonlinear geotechnical parameters greatly.Thus,it is very important to obtain the accurate geotechnical parameters of 2-layer soil for the evaluation of the ultimate pullout capacity of the anchor plate.展开更多
This paper investigates L2-gain analysis and anti-windup compensation gains design for a class of discrete-time switched systems with saturating actuators and L2 bounded disturbances by using the switched Lyapunov fun...This paper investigates L2-gain analysis and anti-windup compensation gains design for a class of discrete-time switched systems with saturating actuators and L2 bounded disturbances by using the switched Lyapunov function approach.For a given set of anti-windup compensation gains,we firstly give a sufficient condition on tolerable disturbances under which the state trajectory starting from the origin will remain inside a bounded set for the corresponding closed-loop switched system subject to L2 bounded disturbances.Then,the upper bound on the restricted L2-gain is obtained over the set of tolerable disturbances.Furthermore,the antiwindup compensation gains aiming to determine the largest disturbance tolerance level and the smallest upper bound of the restricted L2-gain are presented by solving a convex optimization problem with linear matrix inequality(LMI) constraints.A numerical example is given to illustrate the effectiveness of the proposed design method.展开更多
Long-term stability test of Mo/HZSM-5-N catalysts（HZSM-5-N stands for nano-sized HZSM-5） in methane dehydroaromatization（MDA）reaction has been performed with periodic CH4-H2 switch at 1033-1073 K for more than 100...Long-term stability test of Mo/HZSM-5-N catalysts（HZSM-5-N stands for nano-sized HZSM-5） in methane dehydroaromatization（MDA）reaction has been performed with periodic CH4-H2 switch at 1033-1073 K for more than 1000 h.During this test,methane conversion ranges from 13% to 16%,and mean yield to aromatics（i.e.benzene and naphthalene） exceeds 10%.N2-physisorption,XRD,NMR and TPO measurements were performed for the used Mo/HZSM-5 catalysts and coke deposition,and the results revealed that the periodic hydrogenation can effectively suppress coke deposition by removing the inert aromatic-type coke,thus ensuring Mo/HZSM-5 partly maintained its activity even in the presence of large amount of coke deposition.The effect of zeolite particle size on the catalytic activity was also explored,and the results showed that the nano-sized zeolite with low diffusion resistance performed better.It is recognized that the size effect was enhanced by reaction time,and it became more remarkable in a long-term MDA reaction even at a low space velocity.展开更多
The resistive switching characteristics of TiO_2 nanowire networks directly grown on Ti foil by a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the supply of Ti atoms for growth...The resistive switching characteristics of TiO_2 nanowire networks directly grown on Ti foil by a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the supply of Ti atoms for growth of the TiO_2 nanowires, making the preparation straightforward. It also acts as a bottom electrode for the device. A top Al electrode was fabricated by e-beam evaporation process. The Al/TiO_2 nanowire networks/Ti device fabricated in this way displayed a highly repeatable and electroforming-free bipolar resistive behavior with retention for more than 10~4 s and an OFF/ON ratio of approximately 70. The switching mechanism of this Al/TiO_2 nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field. This provides a facile way to obtain metal oxide nanowire-based Re RAM device in the future.展开更多
In this study,resistive random-access memory(RRAM)-based crossbar arrays with a memristor W/TiO_(2)/HfO_(2)/TaN structure were fabricated through atomic layer deposition(ALD)to investigate synaptic plasticity and resi...In this study,resistive random-access memory(RRAM)-based crossbar arrays with a memristor W/TiO_(2)/HfO_(2)/TaN structure were fabricated through atomic layer deposition(ALD)to investigate synaptic plasticity and resistive switching(RS)characteristics for bioinspired neuromorphic computing.X-ray photoelectron spectroscopy(XPS)was employed to explore oxygen vacancy concentrations in bilayer TiO_(2)/HfO_(2)films.Gaussian fitting for O1s peaks confirmed that the HfO_(2)layer contained a larger number of oxygen vacancies than the TiO_(2)layer.In addition,HfO_(2)had lower Gibbs free energy(ΔG°=-1010.8 kJ/mol)than the TiO_(2)layer(ΔG°=-924.0 kJ/mol),resulting in more oxygen vacancies in the HfO_(2)layer.XPS results andΔG°magnitudes confirmed that formation/disruption of oxygen-based conductive filaments took place in the TiO_(2)layer.The W/TiO_(2)/HfO_(2)/TaN memristive device exhibited excellent and repeatable RS characteristics,including superb 10^(3) dc switching cycles,outstanding 107 pulse endurance,and high-thermal stability(10^(4) s at 125℃)important for digital computing systems.Furthermore,some essential biological synaptic characteristics such as potentiation-depression plasticity,paired-pulse facilitation(PPF),and spike-timing-dependent plasticity(STDP,asymmetric Hebbian and asymmetric anti-Hebbian)were successfully mimicked herein using the crossbar-array memristive device.Based on experimental results,a migration and diffusion of oxygen vacancy based physical model is proposed to describe the synaptic plasticity and RS mechanism.This study demonstrates that the proposed W/TiO_(2)/HfO_(2)/TaN memristor crossbar-array has a significant potential for applications in non-volatile memory(NVM)and bioinspired neuromorphic systems.展开更多
Resistive switching （RS） behaviors of Dy2O3- based memory devices with and without Pt nanocrystals （Pt-nc） layer were investigated for nonvolatile memory applications. The Cu/Pt-nc/Dy2O3/Pt memory exhibits excelle...Resistive switching （RS） behaviors of Dy2O3- based memory devices with and without Pt nanocrystals （Pt-nc） layer were investigated for nonvolatile memory applications. The Cu/Pt-nc/Dy2O3/Pt memory exhibits excellent unipolar RS characteristics, including highly uniform switching parameters, lower switching voltage （〈1.2 V）, high resistance ratio （〉1 × 104）, a large number of switching cycles, as well as long retention time （〉1 × 105 s）, owing to the local electric field confined and strengthened near the nanocrystals＇ location.展开更多
Agonist binding of A2A adenosine receptor （A2AAR） shows protective effects against inflammatory and immune. Efforts are exerted in understanding the general mechanism and developing A2AAR selectively binding agonist...Agonist binding of A2A adenosine receptor （A2AAR） shows protective effects against inflammatory and immune. Efforts are exerted in understanding the general mechanism and developing A2AAR selectively binding agonists. Using molecular dynamics （MD） simula- tions, we have studied the interactions between A2AAR and its agonist （adenosine）, and analyzed the induced dynamic behaviors of the receptor. Key residues interacting with adenosine are identified： A63^2.61,I66^2.64,V84^3.32,L85^3.33,T88^3.36,F168^5.29,M177^5.38,L249^6.51,H250^6.52 and N253^6.55 interacting with adenosine with affinities larger than 0.5 kcal/mol. Moreover, no interaction between adenosine and L167^5.28 is observed, which supports our previous findings that L1675^5.28 is an antagonist specific binding reside. The dynamic be- haviors of agonist bound A2AAR are found to be different from apo-A2AAR in three typical functional switches： （i） tight ＂ionic lock＂ forms in adenosine-A2AAR, but it is in equilibrium between formation and breakage in apo-A2AAR; （ii） the ＂rotamer toggle switch＂, T88^3.36/F242^6.44/W246^6.48, adopted different rotameric conformations in adenosin-A2AAR and apo-A2AAR; （iii） adenosine-A2AAR has a flexible intracellular loop 2 （IC2） and s-helical IC3, while apo-A2AAR preferred s-helical IC2 and flexible IC3. Our results indicate that agonist binding induced different conformational rearrangements of these characteristic functional switches in adenosine-A2AAR and apo-A2AAR.展开更多
This paper addresses an infinite horizon distributed H2/H∞ filtering for discrete-time systems under conditions of bounded power and white stochastic signals. The filter algorithm is designed by computing a pair of g...This paper addresses an infinite horizon distributed H2/H∞ filtering for discrete-time systems under conditions of bounded power and white stochastic signals. The filter algorithm is designed by computing a pair of gains namely the estimator and the coupling. Herein, we implement a filter to estimate unknown parameters such that the closed-loop multi-sensor accomplishes the desired performances of the proposed H2 and H∞ schemes over a finite horizon. A switched strategy is implemented to switch between the states once the operation conditions have changed due to disturbances. It is shown that the stability of the overall filtering-error system with H2/H∞ performance can be established if a piecewise-quadratic Lyapunov function is properly constructed. A simulation example is given to show the effectiveness of the proposed approach.展开更多
Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/...Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/TaO_(x) structure,which is facilitated by a wedge-shaped HfO_(2)buffer layer.The field-free switching ratio varies with HfO_(2)thickness,reaching optimal performance at 25 nm.This phenomenon is attributed to the lateral anisotropy gradient of the Co layer,which is induced by the wedge-shaped HfO_(2)buffer layer.The thickness gradient of HfO_(2)along the wedge creates a corresponding lateral anisotropy gradient in the Co layer,correlating with the switching ratio.These findings indicate that field-free SOT switching can be achieved through designing buffer layer,offering a novel approach to innovating spin-orbit device.展开更多
This study deals with Peak of electron density in F2-layer sensibility scale during quiet time on solar minimum. Peaks of electron density in F2-layer (NmF2) values at the quietest days are compared to those carried o...This study deals with Peak of electron density in F2-layer sensibility scale during quiet time on solar minimum. Peaks of electron density in F2-layer (NmF2) values at the quietest days are compared to those carried out from the two nearest days (previous and following of quietest day). The study uses International Reference Ionosphere (IRI) for ionosphere modeling. The located station is Ouagadougou, in West Africa. Solar minimum of phase 22 is considered in this study. Using three core principles of ionosphere modeling under IRI running conditions, the study enables to carry out Peak of electron density in F2-layer values during the quietest days of the characteristic months for the four different seasons. These parameters are compared to those of the previous and the following of the quietest days (the day before and following each quietest selected day) at the same hour. The knowledge of NmF2 values at the quietest days and at the two nearest days enables to calculate the relative error that can be made on this parameter. This calculation highlights insignificant relative errors. This means that NmF2 values at the two nearest days of each quietest day on solar minimum can be used for simulating the quietest days’ behavior. NmF2 values obtained by running IRI model have good correlation with those carried out by Thermosphere-Ionosphere-Electrodynamics-General Circulation Model (TIEGCM).展开更多
In spite of the numerous advances in the development of H_(2)and O_(2)evolutions upon water splitting,the separation of H_(2)from O_(2)still remains a severe challenge.Herein,the novel dual-functional nanocatalysts Pd...In spite of the numerous advances in the development of H_(2)and O_(2)evolutions upon water splitting,the separation of H_(2)from O_(2)still remains a severe challenge.Herein,the novel dual-functional nanocatalysts Pd/carbon nanosphere(CNS),obtained via immobilization of ultrafine Pd nanoparticles onto CNS,are developed and employed for both selective H_(2)generation from HCOOH dehydrogenation and O_(2)evolution from H_(2)O_(2)decomposition.In these reactions,the highest activities for Pd/CNS-800(i.e.,calcinated at 800℃)are 2478 h−1 and 993 min^(−1)for H_(2)and O_(2)evolution,respectively.The highly efficient and selective“on-off”switch for selective H_(2)generation from HCOOH is successfully realized by pH adjustment.This novel and highly efficient nanocatalyst Pd/CNS-800 not only provides new approaches for the promising application of HCOOH and H_(2)O_(2)as economic and safe H_(2)and O_(2)carriers,respectively,for fuel cells,but also promotes the development of“on-off”switch for on-demand H_(2)evolution.展开更多
Resistive random-access memory(RRAM)is a promising technology to develop nonvolatile memory and artificial synaptic devices for brain-inspired neuromorphic computing.Here,we have developed a STO:Ag/SiO_(2) bilayer bas...Resistive random-access memory(RRAM)is a promising technology to develop nonvolatile memory and artificial synaptic devices for brain-inspired neuromorphic computing.Here,we have developed a STO:Ag/SiO_(2) bilayer based memristor that has exhibited a filamentary resistive switching with stable endurance and long-term data retention ability.The memristor also exhibits a tunable resistance modulation under positive and negative pulse trains,which could fully mimic the potentiation and depression behavior like a bio-synapse.Several synaptic plasticity functions,including long-term potentiation(LTP)and long-term depression(LTD),paired-pulsed facilitation(PPF),spike-rate-dependent-plasticity(SRDP),and post-tetanic potentiation(PTP),are faithfully implemented with the fabricated memristor.Moreover,to demonstrate the feasibility of our memristor synapse for neuromorphic applications,spike-timedependent plasticity(STDP)is also investigated.Based on conductive atomic force microscopy observations and electrical transport model analyses,it can be concluded that it is the controlled formation and rupture of Ag filaments that are responsible for the resistive switching while exhibiting a switching ratio of~10;along with a good endurance and stability suitable for nonvolatile memory applications.Before fully electroforming,the gradual conductance modulation of Ag/STO:Ag/SiO_(2)/p^(++)-Si memristor can be realized,and the working mechanism could be explained by the succeeding growth and contraction of Ag filaments promoted by a redox reaction.This newly fabricated memristor may enable the development of nonvolatile memory and realize controllable resistance/weight modulation when applied as an artificial synapse for neuromorphic computing.展开更多
ZnMn_2O_4 films for resistance random access memory（RRAM） were fabricated with different device structures by magnetron sputtering. The effects of electrode on I-V characteristics, resistance switching behavior, end...ZnMn_2O_4 films for resistance random access memory（RRAM） were fabricated with different device structures by magnetron sputtering. The effects of electrode on I-V characteristics, resistance switching behavior, endurance and retention characteristics of ZnMn_2O_4 films were investigated. The ZnMn_2O_4 films, using p-Si and Pt as bottom electrode, exhibit bipolar resistive switching（BRS） behavior dominated by the space-charge-limited conduction（SCLC） mechanism in the high resistance state（HRS） and the filament conduction mechanism in the low resistance state（LRS）, but the ZnMn_2O_4 films using n-Si as bottom electrodes exhibit both bipolar and unipolar resistive switching behaviors controlled by the Poole-Frenkel（P-F） conduction mechanism in both HRS and LRS. Ag/ZnMn_2O_4/p-Si device possesses the best endurance and retention characteristics, in which the number of stable repetition switching cycle is over 1000 and the retention time is longer than 106 seconds. However, the highest RHRS/R_（LRS） ratio of 104 and the lowest V_（ON） and V_（OFF） of 3.0 V have been observed in Ag/ZnMn_2O_4/Pt device. Though the Ag/ZnMn_2O_4/n-Si device also possesses the highest RHRS/R_（LRS） ratio of 104, but the highest values of V_（ON）,V_（OFF）, RHRS and R_（LRS）, as well as the poor endurance and retention characteristics.展开更多
The multilevel storage capability of nonvolatile resistive random access memory(ReRAM)is greatly de-sired to accomplish high functioning memory density.In this study,Ta_(2)O_(5) thin film with different thick-nesses(2...The multilevel storage capability of nonvolatile resistive random access memory(ReRAM)is greatly de-sired to accomplish high functioning memory density.In this study,Ta_(2)O_(5) thin film with different thick-nesses(2,4,and 6 nm)was exploited as an appropriate interfacial barrier layer for limiting the formation of the interfacial layer between the 10 nm thick sputtering deposited resistive switching(RS)layer and Ta ohmic electrode to improve the switching cycle endurance and uniformity.Results show that lower form-ing voltage,narrow distribution of SET-voltages,good dc switching cycles(10^(3)),high pulse endurance(10^(6) cycles),long retention time(10^(4) s at room temperature and 100℃),and reliable multilevel resis-tance states were obtained at an appropriate thickness of∼2 nm Ta_(2)O_(5) interfacial barrier layer instead of without Ta_(2)O_(5) and with∼4 nm,and∼6 nm Ta_(2)O_(5) barrier layer,ZrO_(2)-based memristive devices.Besides,multilevel resistance states have been scientifically investigated via modulating the compliance current(CC)and RESET-stop voltages,which displays that all of the resistance states were distinct and stayed stable without any considerable deprivation over 10^(4) s retention time and 104 pulse endurance cycles.The I-V characteristics of RESET-stop voltage(from−1.7 to−2.3 V)of HRS are found to be a good linear fit with the Schottky equation.It can be seen that Schottky barrier height rises by increasing the stop-voltage during RESET-operation,resulting in enhancing the data storage memory window(on/offratio).Moreover,RESET-voltage and CC control of HRS and LRS revealed the physical origin of the RS mecha-nism,which entails the formation and rupture of conducting nanofilaments.It is thoroughly investigated that proper optimization of the barrier layer at the ohmic interface and the switching layer is essential in memristive devices.These results demonstrate that the ZrO_(2)-based memristive device with an optimized∼2 nm Ta_(2)O_(5) barrier layer is a promising candidate for multilevel data storage memory applications.展开更多
The Ag/Mg0.2Zn0.8O/ZnMn2O4/p^＋-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior,conduction mechanism,endurance characteristic,and retention properties ...The Ag/Mg0.2Zn0.8O/ZnMn2O4/p^＋-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior,conduction mechanism,endurance characteristic,and retention properties were investigated.A distinct bipolar resistive switching behavior of the devices was observed at room temperature.The resistance ratio R_（HRS）/RLRS of high resistance state and low resistance state is as large as four orders of magnitude with a readout voltage of 2.0 V.The dominant conduction mechanism of the device is trap-controlled space charge limited current（SCLC）.The devices exhibit good durability under 1×10^3cycles and the degradation is invisible for more than 10^6 s.展开更多
A resistance random access memory（RRAM） with a structure of Ag/ZnMn2O4/p-Si was fabricated by magnetron sputtering method. Reliable and repeated switching of the resistance of ZnMn2O4 fi lms was obtained between two...A resistance random access memory（RRAM） with a structure of Ag/ZnMn2O4/p-Si was fabricated by magnetron sputtering method. Reliable and repeated switching of the resistance of ZnMn2O4 fi lms was obtained between two well-defi ned states of high and low resistance with a narrow dispersion and 3V switching voltages. Resistance ratio of the high resistance state and low resistance state was found in the range of around 10^3 orders of magnitude and up to about 10^3 test cycles. The retention time of Ag/ZnMn2O4/p-Si device is longer than 10^6 seconds and the resistance ratio between two states remains higher than 10^3 at room temperature, showing a remarkable reliability performance of the RRAM devices for nonvolatile memory application. The equivalent simulation circuits for HRS（high resistance state） and LRS（low resistance state） were also studied by impedance spectroscopy.展开更多
Some hymecromone derivatives containing chiral 1,1'-bi-2-naphthyl moiety were synthesized and their photodimerizations were investigated.It was found that fluorescence intensity and optical rotation of the new chi...Some hymecromone derivatives containing chiral 1,1'-bi-2-naphthyl moiety were synthesized and their photodimerizations were investigated.It was found that fluorescence intensity and optical rotation of the new chiral hymecromone derivatives could be regulated by light.This property has potential significance for developing a new type of dual-mode molecular switch.展开更多
基金supported by the National Research Foundation of Korea funded by the Korean Government(grant No.RS-2023-00208801).
文摘As artificial intelligence and big data become increasingly prevalent, resistive random-access memory (RRAM) has become one of the most promising alternatives for storing massive amounts of data. In this study, we employed high-quality crystalline TiN/Al_(2)O_(3)/BaTiO_(3)/Pt RRAM with an optimized thin Al_(2)O_(3) interlayer around 12 nm thick prepared using atomic layer deposition since the thickness of the interlayer affects the memory window size. After insertion of the Al_(2)O_(3) interlayer, the novel RRAM exhibited outstanding uniform resistive switching voltage and the ON/OFF memory window drastically increased from 10 to 103 without any discernible decline in performance. Moreover, the low-resistance state and high-resistance state operating current values decreased by almost one order and three orders of magnitude, respectively, thereby decreasing the power consumption for the RESET and SET processes by more than three and almost one order of magnitude, respectively. The device also exhibits multilevel resistive switching behavior when varying the applied voltage. Finally, we also developed a 6 6 crossbar array which demonstrated consistent and reliable resistive switching behavior with minimal variation. Hence, our approach holds great promise for producing state-of-the-art non-volatile resistive switching devices.
基金supported in part by the National Natural Science Foundation of China(Grant Nos.51602160 and 61605086)the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20150842)the Talent Project of Nanjing University of Posts and Telecommunications(NUPTSF)(Grant No.NY222127)。
文摘This study investigates the impact of oxide bottom electrode(BE)material and orientation on the resistive switching(RS)characteristics of Al/ZrO_(2)-based ReRAM devices.Devices with different oxide BEs,including(400)-and(222)-oriented ITO BEs deposited under pure argon and argon–oxygen(20%O_(2))sputtering atmospheres,as well as SrRuO_(3)(SRO),show distinct RS behaviors.The Al/ZrO_(2)/(400)-ITO and Al/ZrO_(2)/SRO devices demonstrate stable bipolar RS performance,with(400)-ITO enabling an abrupt reset process,a wider memory window(>10^(4)),and superior stability,while SRO devices exhibit gradual reset transitions with lower power consumption.Furthermore,the crystallographic orientation control applied to ITO BE significantly affects the V_(O) dynamics and RS performance,with(222)-ITO devices exhibiting irreversible RS behavior.It is irrefutable that BE material and its orientation can strongly influence RS performance by modulating the V_(O) dynamics,electric field distribution,and conductive filament behavior.These findings underscore the importance of BE properties in optimizing ReRAM performance and provide valuable guidance for the development of high-efficiency memory devices.
基金support of the National Natu-ral Science Foundation of China(No.62004143,22476058,and 22076052)the Key R&D Program of Hubei Province(No.2022BAA084).
文摘Cu metal and its oxides have attracted much attention for photocatalytic CO_(2)reduction reaction(CO_(2)RR),but the stability and effects of Cu oxidation states on CO_(2)RR are not fully understood.Cu^(x+)/Cu^(0)-loaded graphitic carbon nitride(g-C_(3)N_(4))heterojunctions(Cu-CuO_(x)/g-C_(3)N_(4))are fabricated via a stepwise calcination method for efficient photocatalytic CO_(2)RR.Cu_(2)O is the main component of Cu-CuO_(x)and the mixed valence Cu includes Cu^(0),Cu^(+),and Cu^(2+),which play the role of charge trapping sites and redox catalytic centers during the photocatalytic CO_(2)RR process.The main products were CO and CH_(4)for the CO_(2)RR with production rates of 14.45 and 0.66μmol g^(-1)h^(-1)for CO and CH_(4),which were higher than those for g-C_(3)N_(4)and Cu-CuO_(x),respectively.This photocatalytic CO_(2)RR performance is attributed to the ultrafast switching of“Cu^(x+)−Cu^(0)”and e_(CB^(−))/h_(VB^(+))trapping transformation in Cu-CuO_(x)benefited from the built-in IEF between Cu-CuO_(x)and g-C_(3)N_(4),increasing the efficient photogenerated e_(CB^(−)),and enabling the stability of Cu-CuO_(x)/g-C_(3)N_(4).Cu^(x+)adsorbed by H_(2)O works as the electron trapping site to change to Cu^(0)and switch to the hole trapping site;Cu^(0)works as the hole trapping site to change to Cu^(x+)and switch to the electron trapping site,causing the CO_(2)RR of the adsorbed CO_(2).Moreover,the coordinated Cu^(0)and Cu^(+)species facilitate the activation of the adsorbed CO_(2)and^(∗)CO generation,these adsorbed^(∗)CO on Cu^(0)and Cu^(+)detected by in-situ DRIFTS quickly transformed to^(∗)CHO with a lower energy barrier benefited from the mixed Cu^(0)/Cu^(+)active sites during CORR to produce CH_(4).This finding provides a new insight into the influence of mixed valence Cu during photocatalytic CO_(2)RR.
基金Project (51478477) supported by the National Natural Science Foundation of ChinaProject (2016CX012) supported by the Innovation-Driven Project of Central South University,ChinaProject (2014122006) supported by the Guizhou Provincial Department of Transportation Foundation,China
文摘Based on the nonlinear Mohr-Coulomb failure criterion and an associated flow rule,a kinematic admissible velocity field of failure mechanism of the 2-layer soil above a shallow horizontal strip anchor plate is constructed.The ultimate pull-out force and its corresponding failure mechanism through the upper bound limit analysis according to a variation principle are deduced.When the 2-layer overlying soil is degraded into single-layer soil,the model of ultimate pullout force could also be degraded into the model of single-layer soil.And the comparison between results of single-layer soil variation method and those calculated by rigid limit analysis method proves the correctness of our method.Based on that,the influence of changes of geotechnical parameters on ultimate pullout forces and failure mechanism of a shallow horizontal strip anchor with the 2-layer soil above are analyzed.The results show that the ultimate pull-out force and failure mechanism of a shallow horizontal strip anchor with the 2-layer soil above are affected by the nonlinear geotechnical parameters greatly.Thus,it is very important to obtain the accurate geotechnical parameters of 2-layer soil for the evaluation of the ultimate pullout capacity of the anchor plate.
基金supported by National Natural Science Foundation of China (Nos.61174073 and 90816028)
文摘This paper investigates L2-gain analysis and anti-windup compensation gains design for a class of discrete-time switched systems with saturating actuators and L2 bounded disturbances by using the switched Lyapunov function approach.For a given set of anti-windup compensation gains,we firstly give a sufficient condition on tolerable disturbances under which the state trajectory starting from the origin will remain inside a bounded set for the corresponding closed-loop switched system subject to L2 bounded disturbances.Then,the upper bound on the restricted L2-gain is obtained over the set of tolerable disturbances.Furthermore,the antiwindup compensation gains aiming to determine the largest disturbance tolerance level and the smallest upper bound of the restricted L2-gain are presented by solving a convex optimization problem with linear matrix inequality(LMI) constraints.A numerical example is given to illustrate the effectiveness of the proposed design method.
基金financially supported by the"Strategic Priority Research Program"of Chinese Academy of Sciences(No.XDA09030101)the National Natural Science Foundation of China(No.21103181 and 21473185)+1 种基金DICP Fundamental Research Program for Clean Energy(DICP M201301)Shaanxi Yanchang Petroleum Group Co.Ltd
文摘Long-term stability test of Mo/HZSM-5-N catalysts（HZSM-5-N stands for nano-sized HZSM-5） in methane dehydroaromatization（MDA）reaction has been performed with periodic CH4-H2 switch at 1033-1073 K for more than 1000 h.During this test,methane conversion ranges from 13% to 16%,and mean yield to aromatics（i.e.benzene and naphthalene） exceeds 10%.N2-physisorption,XRD,NMR and TPO measurements were performed for the used Mo/HZSM-5 catalysts and coke deposition,and the results revealed that the periodic hydrogenation can effectively suppress coke deposition by removing the inert aromatic-type coke,thus ensuring Mo/HZSM-5 partly maintained its activity even in the presence of large amount of coke deposition.The effect of zeolite particle size on the catalytic activity was also explored,and the results showed that the nano-sized zeolite with low diffusion resistance performed better.It is recognized that the size effect was enhanced by reaction time,and it became more remarkable in a long-term MDA reaction even at a low space velocity.
基金supported by the Natural Sciences and Engineering Research Council(NSERC)of CanadaThe financial support of the State Scholarship Fund of China(No.201506160061)
文摘The resistive switching characteristics of TiO_2 nanowire networks directly grown on Ti foil by a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the supply of Ti atoms for growth of the TiO_2 nanowires, making the preparation straightforward. It also acts as a bottom electrode for the device. A top Al electrode was fabricated by e-beam evaporation process. The Al/TiO_2 nanowire networks/Ti device fabricated in this way displayed a highly repeatable and electroforming-free bipolar resistive behavior with retention for more than 10~4 s and an OFF/ON ratio of approximately 70. The switching mechanism of this Al/TiO_2 nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field. This provides a facile way to obtain metal oxide nanowire-based Re RAM device in the future.
基金financially supported in part by a grant(2021R1C1C1004422)of the National Research Foundation(NRF)grant funded by the Korean government(MSIP)。
文摘In this study,resistive random-access memory(RRAM)-based crossbar arrays with a memristor W/TiO_(2)/HfO_(2)/TaN structure were fabricated through atomic layer deposition(ALD)to investigate synaptic plasticity and resistive switching(RS)characteristics for bioinspired neuromorphic computing.X-ray photoelectron spectroscopy(XPS)was employed to explore oxygen vacancy concentrations in bilayer TiO_(2)/HfO_(2)films.Gaussian fitting for O1s peaks confirmed that the HfO_(2)layer contained a larger number of oxygen vacancies than the TiO_(2)layer.In addition,HfO_(2)had lower Gibbs free energy(ΔG°=-1010.8 kJ/mol)than the TiO_(2)layer(ΔG°=-924.0 kJ/mol),resulting in more oxygen vacancies in the HfO_(2)layer.XPS results andΔG°magnitudes confirmed that formation/disruption of oxygen-based conductive filaments took place in the TiO_(2)layer.The W/TiO_(2)/HfO_(2)/TaN memristive device exhibited excellent and repeatable RS characteristics,including superb 10^(3) dc switching cycles,outstanding 107 pulse endurance,and high-thermal stability(10^(4) s at 125℃)important for digital computing systems.Furthermore,some essential biological synaptic characteristics such as potentiation-depression plasticity,paired-pulse facilitation(PPF),and spike-timing-dependent plasticity(STDP,asymmetric Hebbian and asymmetric anti-Hebbian)were successfully mimicked herein using the crossbar-array memristive device.Based on experimental results,a migration and diffusion of oxygen vacancy based physical model is proposed to describe the synaptic plasticity and RS mechanism.This study demonstrates that the proposed W/TiO_(2)/HfO_(2)/TaN memristor crossbar-array has a significant potential for applications in non-volatile memory(NVM)and bioinspired neuromorphic systems.
基金financially supported by the National Natural Science Foundation of China(Nos.50932001,51102020,and 51202013)the Important National Science&Technology Specific Projects(No.2009ZX02039-005)
文摘Resistive switching （RS） behaviors of Dy2O3- based memory devices with and without Pt nanocrystals （Pt-nc） layer were investigated for nonvolatile memory applications. The Cu/Pt-nc/Dy2O3/Pt memory exhibits excellent unipolar RS characteristics, including highly uniform switching parameters, lower switching voltage （〈1.2 V）, high resistance ratio （〉1 × 104）, a large number of switching cycles, as well as long retention time （〉1 × 105 s）, owing to the local electric field confined and strengthened near the nanocrystals＇ location.
文摘Agonist binding of A2A adenosine receptor （A2AAR） shows protective effects against inflammatory and immune. Efforts are exerted in understanding the general mechanism and developing A2AAR selectively binding agonists. Using molecular dynamics （MD） simula- tions, we have studied the interactions between A2AAR and its agonist （adenosine）, and analyzed the induced dynamic behaviors of the receptor. Key residues interacting with adenosine are identified： A63^2.61,I66^2.64,V84^3.32,L85^3.33,T88^3.36,F168^5.29,M177^5.38,L249^6.51,H250^6.52 and N253^6.55 interacting with adenosine with affinities larger than 0.5 kcal/mol. Moreover, no interaction between adenosine and L167^5.28 is observed, which supports our previous findings that L1675^5.28 is an antagonist specific binding reside. The dynamic be- haviors of agonist bound A2AAR are found to be different from apo-A2AAR in three typical functional switches： （i） tight ＂ionic lock＂ forms in adenosine-A2AAR, but it is in equilibrium between formation and breakage in apo-A2AAR; （ii） the ＂rotamer toggle switch＂, T88^3.36/F242^6.44/W246^6.48, adopted different rotameric conformations in adenosin-A2AAR and apo-A2AAR; （iii） adenosine-A2AAR has a flexible intracellular loop 2 （IC2） and s-helical IC3, while apo-A2AAR preferred s-helical IC2 and flexible IC3. Our results indicate that agonist binding induced different conformational rearrangements of these characteristic functional switches in adenosine-A2AAR and apo-A2AAR.
基金supported by the Deanship of Scientific Research(DSR)at KFUPM through distinguished professorship project(161065)
文摘This paper addresses an infinite horizon distributed H2/H∞ filtering for discrete-time systems under conditions of bounded power and white stochastic signals. The filter algorithm is designed by computing a pair of gains namely the estimator and the coupling. Herein, we implement a filter to estimate unknown parameters such that the closed-loop multi-sensor accomplishes the desired performances of the proposed H2 and H∞ schemes over a finite horizon. A switched strategy is implemented to switch between the states once the operation conditions have changed due to disturbances. It is shown that the stability of the overall filtering-error system with H2/H∞ performance can be established if a piecewise-quadratic Lyapunov function is properly constructed. A simulation example is given to show the effectiveness of the proposed approach.
基金Project supported by the National Natural Science Foundation of China (Grant No.12274108)the Natural Science Foundation of Zhejiang Province,China (Grant Nos.LY23A040008 and LY23A040008)the Basic Scientific Research Project of Wenzhou,China (Grant No.G20220025)。
文摘Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/TaO_(x) structure,which is facilitated by a wedge-shaped HfO_(2)buffer layer.The field-free switching ratio varies with HfO_(2)thickness,reaching optimal performance at 25 nm.This phenomenon is attributed to the lateral anisotropy gradient of the Co layer,which is induced by the wedge-shaped HfO_(2)buffer layer.The thickness gradient of HfO_(2)along the wedge creates a corresponding lateral anisotropy gradient in the Co layer,correlating with the switching ratio.These findings indicate that field-free SOT switching can be achieved through designing buffer layer,offering a novel approach to innovating spin-orbit device.
文摘This study deals with Peak of electron density in F2-layer sensibility scale during quiet time on solar minimum. Peaks of electron density in F2-layer (NmF2) values at the quietest days are compared to those carried out from the two nearest days (previous and following of quietest day). The study uses International Reference Ionosphere (IRI) for ionosphere modeling. The located station is Ouagadougou, in West Africa. Solar minimum of phase 22 is considered in this study. Using three core principles of ionosphere modeling under IRI running conditions, the study enables to carry out Peak of electron density in F2-layer values during the quietest days of the characteristic months for the four different seasons. These parameters are compared to those of the previous and the following of the quietest days (the day before and following each quietest selected day) at the same hour. The knowledge of NmF2 values at the quietest days and at the two nearest days enables to calculate the relative error that can be made on this parameter. This calculation highlights insignificant relative errors. This means that NmF2 values at the two nearest days of each quietest day on solar minimum can be used for simulating the quietest days’ behavior. NmF2 values obtained by running IRI model have good correlation with those carried out by Thermosphere-Ionosphere-Electrodynamics-General Circulation Model (TIEGCM).
基金National Natural Science Foundation of China,Grant/Award Number:21805166111 Project of China,Grant/Award Number:D20015+1 种基金Ministryof Education,Hubei province,China,Grant/Award Number:T2020004Foundation of Science and Technology Bureau of Yichang City,Grant/Award Number:A21‐3‐012。
文摘In spite of the numerous advances in the development of H_(2)and O_(2)evolutions upon water splitting,the separation of H_(2)from O_(2)still remains a severe challenge.Herein,the novel dual-functional nanocatalysts Pd/carbon nanosphere(CNS),obtained via immobilization of ultrafine Pd nanoparticles onto CNS,are developed and employed for both selective H_(2)generation from HCOOH dehydrogenation and O_(2)evolution from H_(2)O_(2)decomposition.In these reactions,the highest activities for Pd/CNS-800(i.e.,calcinated at 800℃)are 2478 h−1 and 993 min^(−1)for H_(2)and O_(2)evolution,respectively.The highly efficient and selective“on-off”switch for selective H_(2)generation from HCOOH is successfully realized by pH adjustment.This novel and highly efficient nanocatalyst Pd/CNS-800 not only provides new approaches for the promising application of HCOOH and H_(2)O_(2)as economic and safe H_(2)and O_(2)carriers,respectively,for fuel cells,but also promotes the development of“on-off”switch for on-demand H_(2)evolution.
基金financially supported by the National Science Funds for Excellent Young Scholars of China(no.61822106)the Natural Science Foundation of China(no.U19A2070)。
文摘Resistive random-access memory(RRAM)is a promising technology to develop nonvolatile memory and artificial synaptic devices for brain-inspired neuromorphic computing.Here,we have developed a STO:Ag/SiO_(2) bilayer based memristor that has exhibited a filamentary resistive switching with stable endurance and long-term data retention ability.The memristor also exhibits a tunable resistance modulation under positive and negative pulse trains,which could fully mimic the potentiation and depression behavior like a bio-synapse.Several synaptic plasticity functions,including long-term potentiation(LTP)and long-term depression(LTD),paired-pulsed facilitation(PPF),spike-rate-dependent-plasticity(SRDP),and post-tetanic potentiation(PTP),are faithfully implemented with the fabricated memristor.Moreover,to demonstrate the feasibility of our memristor synapse for neuromorphic applications,spike-timedependent plasticity(STDP)is also investigated.Based on conductive atomic force microscopy observations and electrical transport model analyses,it can be concluded that it is the controlled formation and rupture of Ag filaments that are responsible for the resistive switching while exhibiting a switching ratio of~10;along with a good endurance and stability suitable for nonvolatile memory applications.Before fully electroforming,the gradual conductance modulation of Ag/STO:Ag/SiO_(2)/p^(++)-Si memristor can be realized,and the working mechanism could be explained by the succeeding growth and contraction of Ag filaments promoted by a redox reaction.This newly fabricated memristor may enable the development of nonvolatile memory and realize controllable resistance/weight modulation when applied as an artificial synapse for neuromorphic computing.
基金Funded by the National Natural Science Foundation of China(51262003)the Guangxi Key Laboratory of Information Materials(Guilin University of Electronic Technology),China(No.1110908-10-Z)
文摘ZnMn_2O_4 films for resistance random access memory（RRAM） were fabricated with different device structures by magnetron sputtering. The effects of electrode on I-V characteristics, resistance switching behavior, endurance and retention characteristics of ZnMn_2O_4 films were investigated. The ZnMn_2O_4 films, using p-Si and Pt as bottom electrode, exhibit bipolar resistive switching（BRS） behavior dominated by the space-charge-limited conduction（SCLC） mechanism in the high resistance state（HRS） and the filament conduction mechanism in the low resistance state（LRS）, but the ZnMn_2O_4 films using n-Si as bottom electrodes exhibit both bipolar and unipolar resistive switching behaviors controlled by the Poole-Frenkel（P-F） conduction mechanism in both HRS and LRS. Ag/ZnMn_2O_4/p-Si device possesses the best endurance and retention characteristics, in which the number of stable repetition switching cycle is over 1000 and the retention time is longer than 106 seconds. However, the highest RHRS/R_（LRS） ratio of 104 and the lowest V_（ON） and V_（OFF） of 3.0 V have been observed in Ag/ZnMn_2O_4/Pt device. Though the Ag/ZnMn_2O_4/n-Si device also possesses the highest RHRS/R_（LRS） ratio of 104, but the highest values of V_（ON）,V_（OFF）, RHRS and R_（LRS）, as well as the poor endurance and retention characteristics.
基金supported in part by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (No.2021R1C1C1004422)the Dongguk University Research Fund of 2020supported through the National Research Foundation of Korea (NRF) funded by the Ministry of Science,ICT & Future Planning (Nos.NRF2020M3F3A2A02082449 and NRF-2016R1A6A1A03013422)。
文摘The multilevel storage capability of nonvolatile resistive random access memory(ReRAM)is greatly de-sired to accomplish high functioning memory density.In this study,Ta_(2)O_(5) thin film with different thick-nesses(2,4,and 6 nm)was exploited as an appropriate interfacial barrier layer for limiting the formation of the interfacial layer between the 10 nm thick sputtering deposited resistive switching(RS)layer and Ta ohmic electrode to improve the switching cycle endurance and uniformity.Results show that lower form-ing voltage,narrow distribution of SET-voltages,good dc switching cycles(10^(3)),high pulse endurance(10^(6) cycles),long retention time(10^(4) s at room temperature and 100℃),and reliable multilevel resis-tance states were obtained at an appropriate thickness of∼2 nm Ta_(2)O_(5) interfacial barrier layer instead of without Ta_(2)O_(5) and with∼4 nm,and∼6 nm Ta_(2)O_(5) barrier layer,ZrO_(2)-based memristive devices.Besides,multilevel resistance states have been scientifically investigated via modulating the compliance current(CC)and RESET-stop voltages,which displays that all of the resistance states were distinct and stayed stable without any considerable deprivation over 10^(4) s retention time and 104 pulse endurance cycles.The I-V characteristics of RESET-stop voltage(from−1.7 to−2.3 V)of HRS are found to be a good linear fit with the Schottky equation.It can be seen that Schottky barrier height rises by increasing the stop-voltage during RESET-operation,resulting in enhancing the data storage memory window(on/offratio).Moreover,RESET-voltage and CC control of HRS and LRS revealed the physical origin of the RS mecha-nism,which entails the formation and rupture of conducting nanofilaments.It is thoroughly investigated that proper optimization of the barrier layer at the ohmic interface and the switching layer is essential in memristive devices.These results demonstrate that the ZrO_(2)-based memristive device with an optimized∼2 nm Ta_(2)O_(5) barrier layer is a promising candidate for multilevel data storage memory applications.
基金Funded by the National Natural Science Foundation of China(No.51262003)the Guangxi Key Laboratory of Information Materials(Guilin University of Electronic Technology),China(No.1110908-10-Z)
文摘The Ag/Mg0.2Zn0.8O/ZnMn2O4/p^＋-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior,conduction mechanism,endurance characteristic,and retention properties were investigated.A distinct bipolar resistive switching behavior of the devices was observed at room temperature.The resistance ratio R_（HRS）/RLRS of high resistance state and low resistance state is as large as four orders of magnitude with a readout voltage of 2.0 V.The dominant conduction mechanism of the device is trap-controlled space charge limited current（SCLC）.The devices exhibit good durability under 1×10^3cycles and the degradation is invisible for more than 10^6 s.
基金Funded by the National Natural Science Foundation of China(51262003)the Guangxi Key Laboratory of Information Materials(Guilin University of Electronic Technology),China(No.1110908-10-Z)
文摘A resistance random access memory（RRAM） with a structure of Ag/ZnMn2O4/p-Si was fabricated by magnetron sputtering method. Reliable and repeated switching of the resistance of ZnMn2O4 fi lms was obtained between two well-defi ned states of high and low resistance with a narrow dispersion and 3V switching voltages. Resistance ratio of the high resistance state and low resistance state was found in the range of around 10^3 orders of magnitude and up to about 10^3 test cycles. The retention time of Ag/ZnMn2O4/p-Si device is longer than 10^6 seconds and the resistance ratio between two states remains higher than 10^3 at room temperature, showing a remarkable reliability performance of the RRAM devices for nonvolatile memory application. The equivalent simulation circuits for HRS（high resistance state） and LRS（low resistance state） were also studied by impedance spectroscopy.
基金the National Natural Science Foundation of China for financial suppoa(No.29972033)
文摘Some hymecromone derivatives containing chiral 1,1'-bi-2-naphthyl moiety were synthesized and their photodimerizations were investigated.It was found that fluorescence intensity and optical rotation of the new chiral hymecromone derivatives could be regulated by light.This property has potential significance for developing a new type of dual-mode molecular switch.
