Ruthenium(Ru)-based chalcogenide(S,Se)is a promising material in various fields,such as optics,photoelectrodes,and electrocatalysis,owing to its suitable bandgap for generating charge carriers under light illumination...Ruthenium(Ru)-based chalcogenide(S,Se)is a promising material in various fields,such as optics,photoelectrodes,and electrocatalysis,owing to its suitable bandgap for generating charge carriers under light illumination ranging from visible to near-infrared(NIR)and its high absorption coefficient.In this study,we report the synthesis of Ru Se_(2)thin films by chemical vapor deposition(CVD)with a bandgap matching the NIR region at 0.52 e V.Further,we demonstrated Ru S_(2x)Se_(2-2x)alloy films using the post-sulfurization process after CVD Ru Se_(2)with a tunable bandgap from 0.52 to 1.39 e V depending on sulfur composition.Remarkably,Ru S_(2x)Se_(2-2x)alloy film metal–semiconductor–metal(MSM)photodetector sulfurized at 500°C,with a 0.75 e V bandgap,exhibits enhanced broad absorption across NIR spectral ranges,suppressed dark current and high photoresponsivity in NIR wavelengths range even at zero-bias.We believe the bandgaptunable Ru S_(2x)Se_(2-2x)thin film through an efficient deposition method could be suitable for various optoelectronic applications.展开更多
研制一种2-2型圆管压电复合材料。将压电陶瓷圆管沿轴向方向均匀切割,把环氧树脂浇注于切槽,经打磨和蒸镀电极,制成2-2型压电复合材料圆管。对压电复合材料圆管的压电和介电性能进行测试,结果为谐振频率388 k Hz,带宽11.2 k Hz,声阻抗18...研制一种2-2型圆管压电复合材料。将压电陶瓷圆管沿轴向方向均匀切割,把环氧树脂浇注于切槽,经打磨和蒸镀电极,制成2-2型压电复合材料圆管。对压电复合材料圆管的压电和介电性能进行测试,结果为谐振频率388 k Hz,带宽11.2 k Hz,声阻抗18.05 Pa·s/m3,相对介电常数859,声速3 200 m/s,d33常数480 p C/N,振动位移89.5 pm。该压电复合材料圆管适合做水平全向宽带换能器。展开更多
目的构建转录因子E2-2基因腺病毒载体,观测内皮祖细胞(endothelial progenitor cells,EPCs)过表达E2-2基因对DNA结合抑制因子-1(inhibitor of DNA binding/differentiation,ID1)表达的影响。方法分离、培养并鉴定小鼠骨髓EPCs。RT-PCR...目的构建转录因子E2-2基因腺病毒载体,观测内皮祖细胞(endothelial progenitor cells,EPCs)过表达E2-2基因对DNA结合抑制因子-1(inhibitor of DNA binding/differentiation,ID1)表达的影响。方法分离、培养并鉴定小鼠骨髓EPCs。RT-PCR法扩增E2-2基因CDs全长DNA,克隆入载体pTG19-T后,亚克隆入腺病毒穿梭载体pAdTrack-CMV中,构建pAdTrack/E2-2重组载体,与pAdEasy-1骨架质粒同源重组形成重组病毒pAd/E2-2,经293细胞包装,获具高效感染力的重组pAd/E2-2病毒。将该病毒感染EPCs,倒置显微镜观测经感染的EPCs的GFP表达情况。CCK-8(cell count kit-8)法检测病毒pAd/E2-2对EPCs生长、增殖的影响。RT-PCR、Western blot分别检测经感染的EPCs中E2-2与ID1基因及其编码蛋白的表达情况,并予以定量分析。结果分离、培养并鉴定到小鼠骨髓EPCs。克隆到2013 bp的E2-2基因,并获得高效感染力的重组pAd/E2-2病毒。CCK-8法检测表明,与对照比较,过表达E2-2的EPCs的生长、增殖速度减慢,48h开始变得尤为明显(P<0.01);RT-PCR、Western blot及定量分析结果显示,E2-2能下调ID1的表达,与对照比较,差异具统计学意义(P<0.01)。结论分离、培养并鉴定小鼠骨髓EPCs,克隆出E2-2基因,证实E2-2能明显抑制EPCs的生长、增殖,并能下调ID1基因的表达。展开更多
基金supported by TANAKA KIKINZOKU KOGYO K.Kfinancially supported by the National Research Foundation of Korea(NRF)grant funded by the Korea government(MSIT)(No.NRF-2022R1A2C2006764)the Materials and Components Technology Development Program of MOTIE/KEIT(No.[20012460])。
文摘Ruthenium(Ru)-based chalcogenide(S,Se)is a promising material in various fields,such as optics,photoelectrodes,and electrocatalysis,owing to its suitable bandgap for generating charge carriers under light illumination ranging from visible to near-infrared(NIR)and its high absorption coefficient.In this study,we report the synthesis of Ru Se_(2)thin films by chemical vapor deposition(CVD)with a bandgap matching the NIR region at 0.52 e V.Further,we demonstrated Ru S_(2x)Se_(2-2x)alloy films using the post-sulfurization process after CVD Ru Se_(2)with a tunable bandgap from 0.52 to 1.39 e V depending on sulfur composition.Remarkably,Ru S_(2x)Se_(2-2x)alloy film metal–semiconductor–metal(MSM)photodetector sulfurized at 500°C,with a 0.75 e V bandgap,exhibits enhanced broad absorption across NIR spectral ranges,suppressed dark current and high photoresponsivity in NIR wavelengths range even at zero-bias.We believe the bandgaptunable Ru S_(2x)Se_(2-2x)thin film through an efficient deposition method could be suitable for various optoelectronic applications.
文摘研制一种2-2型圆管压电复合材料。将压电陶瓷圆管沿轴向方向均匀切割,把环氧树脂浇注于切槽,经打磨和蒸镀电极,制成2-2型压电复合材料圆管。对压电复合材料圆管的压电和介电性能进行测试,结果为谐振频率388 k Hz,带宽11.2 k Hz,声阻抗18.05 Pa·s/m3,相对介电常数859,声速3 200 m/s,d33常数480 p C/N,振动位移89.5 pm。该压电复合材料圆管适合做水平全向宽带换能器。
