为明确0.5%香菇多糖水剂对西葫芦病毒病的田间预防效果和治疗效果以及对作物的安全性。采用随机区组试验的方式在田间对西葫芦病毒病进行试验。结果表明,各个处理未见药害症状,对植株安全。0.5%香菇多糖水剂在6.0~10 g a.i./hm^(2)用量...为明确0.5%香菇多糖水剂对西葫芦病毒病的田间预防效果和治疗效果以及对作物的安全性。采用随机区组试验的方式在田间对西葫芦病毒病进行试验。结果表明,各个处理未见药害症状,对植株安全。0.5%香菇多糖水剂在6.0~10 g a.i./hm^(2)用量下可有效防治西葫芦病毒病,第1次药后21 d发病前药剂处理相对防效可达52.25%~74.02%,发病初期药剂处理相对防效可达54.69%~61.40%,且病害发生前使用相较于病害发生后使用能延缓病害蔓延。因此,0.5%香菇多糖水剂在田间可以有效防治西葫芦病毒病,建议推荐用量为10 g a.i./hm^(2),且在病毒病常发地区,建议发病前进行药剂预防,可显著提高防治效果。展开更多
Innovative use of HfO_(2)-based high-dielectric-permittivity materials could enable their integration into few-nanometre-scale devices for storing substantial quantities of electrical charges,which have received wides...Innovative use of HfO_(2)-based high-dielectric-permittivity materials could enable their integration into few-nanometre-scale devices for storing substantial quantities of electrical charges,which have received widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal-oxide-semiconductor devices.During bipolar high electric-field cycling in numbers close to dielectric breakdown,the dielectric permittivity suddenly increases by 30 times after oxygen-vacancy ordering and ferroelectric-to-nonferroelectric phase transition of near-edge plasma-treated Hf_(0.5)Zr_(0.5)O_(2) thin-film capacitors.Here we report a much higher dielectric permittivity of 1466 during downscaling of the capacitor into the diameter of 3.85μm when the ferroelectricity suddenly disappears without high-field cycling.The stored charge density is as high as 183μC cm^(−2) at an operating voltage/time of 1.2 V/50 ns at cycle numbers of more than 10^(12) without inducing dielectric breakdown.The study of synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase.The image of electron energy loss spectroscopy shows the preferred oxygen-vacancy accumulation at the regions near top/bottom electrodes as well as grain boundaries.The ultrahigh dielectric-permittivity material enables high-density integration of extremely scaled logic and memory devices in the future.展开更多
文摘为明确0.5%香菇多糖水剂对西葫芦病毒病的田间预防效果和治疗效果以及对作物的安全性。采用随机区组试验的方式在田间对西葫芦病毒病进行试验。结果表明,各个处理未见药害症状,对植株安全。0.5%香菇多糖水剂在6.0~10 g a.i./hm^(2)用量下可有效防治西葫芦病毒病,第1次药后21 d发病前药剂处理相对防效可达52.25%~74.02%,发病初期药剂处理相对防效可达54.69%~61.40%,且病害发生前使用相较于病害发生后使用能延缓病害蔓延。因此,0.5%香菇多糖水剂在田间可以有效防治西葫芦病毒病,建议推荐用量为10 g a.i./hm^(2),且在病毒病常发地区,建议发病前进行药剂预防,可显著提高防治效果。
基金supported by the National Key Basic Research Program of China (2022YFA1402904)Basic Research Project of Shanghai Science and Technology Innovation Action (grant number 24CL2900900)the National Natural Science Foundation of China (grant number 61904034)
文摘Innovative use of HfO_(2)-based high-dielectric-permittivity materials could enable their integration into few-nanometre-scale devices for storing substantial quantities of electrical charges,which have received widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal-oxide-semiconductor devices.During bipolar high electric-field cycling in numbers close to dielectric breakdown,the dielectric permittivity suddenly increases by 30 times after oxygen-vacancy ordering and ferroelectric-to-nonferroelectric phase transition of near-edge plasma-treated Hf_(0.5)Zr_(0.5)O_(2) thin-film capacitors.Here we report a much higher dielectric permittivity of 1466 during downscaling of the capacitor into the diameter of 3.85μm when the ferroelectricity suddenly disappears without high-field cycling.The stored charge density is as high as 183μC cm^(−2) at an operating voltage/time of 1.2 V/50 ns at cycle numbers of more than 10^(12) without inducing dielectric breakdown.The study of synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase.The image of electron energy loss spectroscopy shows the preferred oxygen-vacancy accumulation at the regions near top/bottom electrodes as well as grain boundaries.The ultrahigh dielectric-permittivity material enables high-density integration of extremely scaled logic and memory devices in the future.
