This work presents solution-processed high-performance graphene quantum dots(GQDs)decorated amor-phous InGaZnO(α-IGZO)thin-film transistors(TFTs)based on ZrO x as gate dielectrics.Compare with pure IGZO TFTs,GQDs-mod...This work presents solution-processed high-performance graphene quantum dots(GQDs)decorated amor-phous InGaZnO(α-IGZO)thin-film transistors(TFTs)based on ZrO x as gate dielectrics.Compare with pure IGZO TFTs,GQDs-modifiedα-IGZO TFTs devices with optimized doping content have demonstrated better performances,including a larger field-effect mobility(μFE)of 35.91 cm 2 V^(-1)s^(-1),a higher on/offcurrent ratio(I ON/I OFF)of 5.04×10^(8),a smaller subthreshold swing(SS)of 0.11 V dec^(-1)and a smaller interfacial trap states(D it,1.57×10^(12)cm^(−2)).Moreover,the GQDs-doped IGZO TFTs with a doping concentration of 0.5 mg ml^(-1)have shown excellent stability under bias stress and illumination stress conditions.To demonstrate the potential applications ofα-IGZO TFTs in logic circuits,a resistor-loaded unipolar inverter based on GQDs-IGZO/ZrO x has been integrated,demonstrating good dynamic behavior and a high gain of 9.3.Low-frequency noise(LFN)characteristics of GQDs-IGZO/ZrO x TFTs have suggested that the fluctua-tions in mobility are the noise source.Based on all the experimental findings,it can be concluded that solution-processed GQDs-IGZO/ZrO x TFT may envision promising applications in optoelectronics.展开更多
基金supported by the National Natural Science Foundation of China(No.11774001)the Anhui Project(No.Z010118169)the Open Fund Project of Zhejiang Engineering Research Center of MEMS in Shaoxing University(No.MEMSZ-JERC2202).
文摘This work presents solution-processed high-performance graphene quantum dots(GQDs)decorated amor-phous InGaZnO(α-IGZO)thin-film transistors(TFTs)based on ZrO x as gate dielectrics.Compare with pure IGZO TFTs,GQDs-modifiedα-IGZO TFTs devices with optimized doping content have demonstrated better performances,including a larger field-effect mobility(μFE)of 35.91 cm 2 V^(-1)s^(-1),a higher on/offcurrent ratio(I ON/I OFF)of 5.04×10^(8),a smaller subthreshold swing(SS)of 0.11 V dec^(-1)and a smaller interfacial trap states(D it,1.57×10^(12)cm^(−2)).Moreover,the GQDs-doped IGZO TFTs with a doping concentration of 0.5 mg ml^(-1)have shown excellent stability under bias stress and illumination stress conditions.To demonstrate the potential applications ofα-IGZO TFTs in logic circuits,a resistor-loaded unipolar inverter based on GQDs-IGZO/ZrO x has been integrated,demonstrating good dynamic behavior and a high gain of 9.3.Low-frequency noise(LFN)characteristics of GQDs-IGZO/ZrO x TFTs have suggested that the fluctua-tions in mobility are the noise source.Based on all the experimental findings,it can be concluded that solution-processed GQDs-IGZO/ZrO x TFT may envision promising applications in optoelectronics.
