Tow different computer calculation methods for distortion of the wide-band diode bridge track and hold amplifier (THA) are presented based on a high frequency Schottky diode model. One of the computer programs calcula...Tow different computer calculation methods for distortion of the wide-band diode bridge track and hold amplifier (THA) are presented based on a high frequency Schottky diode model. One of the computer programs calculates the distortion of weekly nonlinear THA based on the KCL and the nonlinear-current method. The other calculates the weekly nonlinear distortion by using a Volterra series method and a nodal formulation. Comparative calculation results for the diode bridge THA have shown good agreement with these two computer program calculation methods, whereas the overall computational efficiency of the nonlinear-current method is better than that of the nodal formulation method in a special evaluation.展开更多
A novel Ku-band low noise amplifier with a high electron mobility transistor (HEMT)and a GaAs monolithic microwave integrated circuit (MMIC) has been demonstrated. Its noisefigure is less-than 1.9dB with an associated...A novel Ku-band low noise amplifier with a high electron mobility transistor (HEMT)and a GaAs monolithic microwave integrated circuit (MMIC) has been demonstrated. Its noisefigure is less-than 1.9dB with an associated gain larger than 27dB and an input/output VSWRless than 1.4 in the frequency range of 11.7-12.2GHz. The HEMT and the microwave series in-ductance feedback technique are used in the first stage of the amplifier, and a Ku-band MMIC isemployed in the last stage. The key to this design is to achieve an optimum noise match and a min-imum input VSWR matching simultaneously by using the microwave series inductance feedbackmethod. The B J-120 waveguides are used in both input and output of the amplifier.展开更多
A 32-channel charge-sensitive amplifier(CSA)is designed for fast timing in the delay-line readout of a parallel plate avalanche counter(PPAC)array.It is realized on a PCB with operational amplifiers and other discrete...A 32-channel charge-sensitive amplifier(CSA)is designed for fast timing in the delay-line readout of a parallel plate avalanche counter(PPAC)array.It is realized on a PCB with operational amplifiers and other discrete components.Each channel consists of an integrator,a pole-zero cancellation net,and a linear amplification stage,which can be adapted to accommodate either positive or negative input signals.The RMS equivalent input noise charges are 3.3 fC,the conversion gains are approximately±2 mV∕fC,and the intrinsic time resolution reaches 32 ps.In the prototype PPAC application,the CSA performs as well as the commercial FTA820A amplifier,providing a position resolution as good as 0.17 mm,and exhibiting reliable stability during several hours of continuous data acquisition.展开更多
This paper presents the design of an ultra low-voltage (ULV) pseudo operational transconductance amplifier (P-OTA) that is able to operate with a single supply voltage as low as 0.4 V. The proposed circuit is based on...This paper presents the design of an ultra low-voltage (ULV) pseudo operational transconductance amplifier (P-OTA) that is able to operate with a single supply voltage as low as 0.4 V. The proposed circuit is based on the bulk-driven technique and use of cross-coupled self-cascode pairs that boosts the differential DC gain. The stability condition of this structure for the DC gain is considered by definition of two coefficients to cancel out a controllable percentage of the denominator. This expression for stability condition yield optimized value for the DC gain. Also, as the principle of operation of the proposed technique relies on matching conditions, Monte Carlo analyzes are considered to study of the behavior of the proposed circuit against mismatches. The designed P-OTA have a DC gain of 64 dB, 212 KHz unity gain bandwidth, 57phase margin that is loaded by 10 pF differential capacitive loads, while consume only 16 μW. Eventually, from the proposed P-OTA, a low-power Sample and Hold (S/H) circuit with sampling frequency of 10 KS/s has been designed and simulated. The correct functionality for this configuration is verified from –30℃ to 70℃. The simulated data presented is obtained using the HSPICE Environment and is valid for the 90 nm triple-well CMOS process.展开更多
This research paper contains a new electronically tunable current-mode biquadratic universal filter using a new active building block;current controlled differential difference current conveyor transconductance amplif...This research paper contains a new electronically tunable current-mode biquadratic universal filter using a new active building block;current controlled differential difference current conveyor transconductance amplifier (CCDDCCTA). The proposed filter provides the following important and desirable features: (i) One can use only one CCDDCCTA and two capacitors;(ii) One can get low pass (LP), band pass (BP), high pass (HP), notch (NF) and all pass (AP) current responses from the same configuration without any alteration;(iii) Passive components are grounded, which ease the integrated circuit implementation;(iv) Responses are electronically tunable;and (v) Sensitivity is low. Moreover, the non-ideality analysis shows that the parasitic passive components can be compensated for the proposed circuit. The functionality of the design is verified through SPICE simulations using 0.25 μm CMOS TSMC technology process parameters. Simulation result agrees well with the theoretical analysis.展开更多
A common current source, generally used to bias cross-coupled differential amplifiers in a transconductor, controls third harmonic distortion (HD3) poorly. Separate current sources are shown to provide better control ...A common current source, generally used to bias cross-coupled differential amplifiers in a transconductor, controls third harmonic distortion (HD3) poorly. Separate current sources are shown to provide better control on HD3) . In this paper, a detailed design and analysis is presented for a transconductor made using this biasing technique. The transconductor, in addition, is made to offer high Gm, low power dissipation and is designed for linearly tunable Gm with current mode load as one of the applications. The circuit exhibits HD3) of less than –43.7 dB, high current efficiency of 1.18 V-1 and Gm of 390 μS at 1 VGp-p @ 50 MHz. UMC 0.18 μm CMOS process technology is used for simulation at supply voltage of 1.8 V.展开更多
A method to predict intermodulation (IM) products of two tone test based on Amplitude to amplitude (AM-AM) and amplitude to phase (AM-PM) diagrams of power amplifier is proposed in this paper. An RF power amplifier is...A method to predict intermodulation (IM) products of two tone test based on Amplitude to amplitude (AM-AM) and amplitude to phase (AM-PM) diagrams of power amplifier is proposed in this paper. An RF power amplifier is mathe-matically modeled by a power series in order of 13. Coefficients of the transfer function are obtained by odd-order polynomial fitting of the transfer function of the power amplifier that is modeled by power series, with AM-AM and AM-PM diagrams. Because of considering AM-PM distortion, coefficients have become complex. By using this transfer function, analytical expressions of IM products are derived. Frequency effect of IM products are modeled in suggested method to estimate the effects of changing in input frequency on output. With the mean of this factor the model is able to predict IM products of wideband frequency input. Simulated results agree well with the predicted method in comparisons.展开更多
In this paper,we have mainly studied the amplification effect of thulium-doped fiber amplifier(TDFA)at 2µm,and compared different amplification effects of the one-stage TDFA,two-stage TDFA and three-stage TDFA at...In this paper,we have mainly studied the amplification effect of thulium-doped fiber amplifier(TDFA)at 2µm,and compared different amplification effects of the one-stage TDFA,two-stage TDFA and three-stage TDFA at proper conditions.The simulation results show that within the effective threshold,with the increase of the pump power,the amplification effect of the optical amplifier improves,but the signal-to-noise ratio(SNR)of the output signal decreases,in order to balance the gain benefit and noise coefficient of TDFA,we can use a multi-stage amplification structure.Three-stage backward-pumped series 2.06µm TDFA,whose slope efficiency can achieve 11%at certain condition.At 5.2 W pump power,the output signal gain of 2µm TDFA exceeds 20 dB,and the output SNR is higher than 32 dB.In addition,the effect of the optimum length of thulium-doped fiber on the amplification performance of 2µm TDFA is also analyzed in this paper.These simulation results are important for the experiment and design of 2µm TDFA.展开更多
Photolithography has been a major enabler for the continuous shrink of the semiconductor manufacturing design rules.Throughout the years of the development of the photolithography,many new technologies have been inven...Photolithography has been a major enabler for the continuous shrink of the semiconductor manufacturing design rules.Throughout the years of the development of the photolithography,many new technologies have been invented and successfully implemented,such as image projection lithography,chemically amplified photoresist,phase shifting mask,optical proximity modeling and correction,etc.From 0.25μm technology to the current 7 nm technology,the linewidth has been shrunk from 250 nm to about 20 nm,or 12.5 times.Although imaging resolution is proportional to the illumination wavelength,with the new technologies,the wavelength has only been shrunk from 248 nm to 134.7 nm(193 nm immersion in water),less than 2 times.Would it mean that the imaging performance has been continuously declining?Or we have yet fully utilized the potential of the photolithography technology?In this paper,we will present a study on the key parameters and process window performance of the image projection photolithography from 0.25μm node to the current 7 nm node.展开更多
Quasi-PID control method that is able to effectively inhibit the inherent tracking error of PI control method is proposed on the basis of a rounded theoretical analysis of a model of switching power amplifiers (SPAs)....Quasi-PID control method that is able to effectively inhibit the inherent tracking error of PI control method is proposed on the basis of a rounded theoretical analysis of a model of switching power amplifiers (SPAs). To avoid the harmful impacts of the circuit parameter variations and the random disturbances on quasi-PID control method, a single neuron is introduced to endow it with self-adaptability. Quasi-PID control method and the single neuron combine with each other perfectly, and their formation is named as single-neuron adaptive quasi-PID control method. Simulation and experimental results show that single-neuron adaptive quasi-PID control method can accurately track both the predictable and the unpredictable waveforms. Quantitative analysis demonstrates that the accuracy of single-neuron adaptive quasi-PID control method is comparable to that of linear power amplifiers (LPAs) and so can fulfill the requirements of some high-accuracy applications, such as protective relay test. Such accuracy is very difficult to be achieved by many modern control methods for converter controls. Compared with other modern control methods, the programming realization of single-neuron adaptive quasi-PID control method is more suitable for real-time applications and realization on low-end microprocessors for its simple structure and lower computational complexity.展开更多
We present a gain adaptive tuning method for fiber Raman amplifier(FRA) using two-stage neural networks(NNs) and double weights updates. After training the connection weights of two-stage NNs separately in training ph...We present a gain adaptive tuning method for fiber Raman amplifier(FRA) using two-stage neural networks(NNs) and double weights updates. After training the connection weights of two-stage NNs separately in training phase, the connection weights of the unified NN are updated again in verification phase according to error between the predicted and target gains to eliminate the inherent error of the NNs. The simulation results show that the mean of root mean square error(RMSE) and maximum error of gains are 0.131 d B and 0.281 d B, respectively. It shows that the method can realize adaptive adjustment function of FRA gain with high accuracy.展开更多
A new circuit for realization of universal current-mode filter using current Follower Transconductance Amplifiers (CFTAs) is presented. The proposed circuit realizes current-mode low pass, high pass and band pass filt...A new circuit for realization of universal current-mode filter using current Follower Transconductance Amplifiers (CFTAs) is presented. The proposed circuit realizes current-mode low pass, high pass and band pass filter functions simultaneously with a single current source at the input. The band reject and all pass filters can also be obtained from the proposed circuit without any extra hardware. The proposed circuit employs three passive grounded elements and two CFTAs. Linear electronic control of natural frequency ω0 is available in the proposed circuit. The quality factor can be independently adjusted through grounded resistor. The proposed circuit employs two grounded capacitors and a grounded resistor along with two CFTAs. The grounded resistor can be replaced by an OTA based circuit for linear electronic control of quality factor Q0. The circuit exhibits low active and passive sensitivities for ω0 and Q0. Simulation results are obtained using PSPICE software which is in conformity with the theoretical findings.展开更多
The reliability of electronic device is threatened in high power microwave (HPM) environment. In accordance with the situation that the emulation is ineffective in evaluating the accuracy and precision of the HPM effe...The reliability of electronic device is threatened in high power microwave (HPM) environment. In accordance with the situation that the emulation is ineffective in evaluating the accuracy and precision of the HPM effect to electronic device, the experimental method is used to resolve the problem. Low Noise Amplifier (LNA) and Limiter are selected as the objects for the experiments, the structural characteristic of the front-end of radar receiver is described, the phenomena and criterion are elaborated and analyzed using injection method due to its ability to get an accurate threshold avoiding the complex coupling, the basic principle of injection experiment is demonstrated, and the method and process of effect experiment about Low Noise Amplifier and Limiter are also explained. The experimental system is established, and the system is composed of low power microwave source such as TWT, test equipment for obtaining the effect parameters, and some of auxiliary equipments as camera, optical microscope or electron microscopy, attenuator, detector, and directional coupler etc. The microwave delivered from source is adjusted to the power infused by attenuator, and pour in the decanting point of effecter via directional coupler, then the couple signal created by directional coupler is input to the recording instrument after detecting by detector, finally the power of effecter is obtained. The value of power, which damages the effecter in the microwave pulse environment, is classified at the index of sensitivity, and the threshold is obtained by power diagnose and wave test. Some regular understandings of the HPM effect to electronic device are obtained based on the results of the experiments. It turns out that the index of electronic device is influenced significantly by the energy via front door coupling, the MOSFET made up of GaAs is the most wearing part to HPM in LNA, the damage threshold of LNA is about 40dBm under single pulse while in repetitive pulse the value is from 33.3dBm to 43.9dBm according to different wave band. The damage threshold of Limiter is about 56dBm to80dBm.展开更多
文摘Tow different computer calculation methods for distortion of the wide-band diode bridge track and hold amplifier (THA) are presented based on a high frequency Schottky diode model. One of the computer programs calculates the distortion of weekly nonlinear THA based on the KCL and the nonlinear-current method. The other calculates the weekly nonlinear distortion by using a Volterra series method and a nodal formulation. Comparative calculation results for the diode bridge THA have shown good agreement with these two computer program calculation methods, whereas the overall computational efficiency of the nonlinear-current method is better than that of the nodal formulation method in a special evaluation.
文摘A novel Ku-band low noise amplifier with a high electron mobility transistor (HEMT)and a GaAs monolithic microwave integrated circuit (MMIC) has been demonstrated. Its noisefigure is less-than 1.9dB with an associated gain larger than 27dB and an input/output VSWRless than 1.4 in the frequency range of 11.7-12.2GHz. The HEMT and the microwave series in-ductance feedback technique are used in the first stage of the amplifier, and a Ku-band MMIC isemployed in the last stage. The key to this design is to achieve an optimum noise match and a min-imum input VSWR matching simultaneously by using the microwave series inductance feedbackmethod. The B J-120 waveguides are used in both input and output of the amplifier.
基金supported by the National Natural Science Foundation of China(Nos.U2167202,12225504,12005276)the Natural Science Foundation of Shandong Province(No.ZR2024QA172)the Fundamental Research Funds of Shandong University.
文摘A 32-channel charge-sensitive amplifier(CSA)is designed for fast timing in the delay-line readout of a parallel plate avalanche counter(PPAC)array.It is realized on a PCB with operational amplifiers and other discrete components.Each channel consists of an integrator,a pole-zero cancellation net,and a linear amplification stage,which can be adapted to accommodate either positive or negative input signals.The RMS equivalent input noise charges are 3.3 fC,the conversion gains are approximately±2 mV∕fC,and the intrinsic time resolution reaches 32 ps.In the prototype PPAC application,the CSA performs as well as the commercial FTA820A amplifier,providing a position resolution as good as 0.17 mm,and exhibiting reliable stability during several hours of continuous data acquisition.
文摘This paper presents the design of an ultra low-voltage (ULV) pseudo operational transconductance amplifier (P-OTA) that is able to operate with a single supply voltage as low as 0.4 V. The proposed circuit is based on the bulk-driven technique and use of cross-coupled self-cascode pairs that boosts the differential DC gain. The stability condition of this structure for the DC gain is considered by definition of two coefficients to cancel out a controllable percentage of the denominator. This expression for stability condition yield optimized value for the DC gain. Also, as the principle of operation of the proposed technique relies on matching conditions, Monte Carlo analyzes are considered to study of the behavior of the proposed circuit against mismatches. The designed P-OTA have a DC gain of 64 dB, 212 KHz unity gain bandwidth, 57phase margin that is loaded by 10 pF differential capacitive loads, while consume only 16 μW. Eventually, from the proposed P-OTA, a low-power Sample and Hold (S/H) circuit with sampling frequency of 10 KS/s has been designed and simulated. The correct functionality for this configuration is verified from –30℃ to 70℃. The simulated data presented is obtained using the HSPICE Environment and is valid for the 90 nm triple-well CMOS process.
文摘This research paper contains a new electronically tunable current-mode biquadratic universal filter using a new active building block;current controlled differential difference current conveyor transconductance amplifier (CCDDCCTA). The proposed filter provides the following important and desirable features: (i) One can use only one CCDDCCTA and two capacitors;(ii) One can get low pass (LP), band pass (BP), high pass (HP), notch (NF) and all pass (AP) current responses from the same configuration without any alteration;(iii) Passive components are grounded, which ease the integrated circuit implementation;(iv) Responses are electronically tunable;and (v) Sensitivity is low. Moreover, the non-ideality analysis shows that the parasitic passive components can be compensated for the proposed circuit. The functionality of the design is verified through SPICE simulations using 0.25 μm CMOS TSMC technology process parameters. Simulation result agrees well with the theoretical analysis.
文摘A common current source, generally used to bias cross-coupled differential amplifiers in a transconductor, controls third harmonic distortion (HD3) poorly. Separate current sources are shown to provide better control on HD3) . In this paper, a detailed design and analysis is presented for a transconductor made using this biasing technique. The transconductor, in addition, is made to offer high Gm, low power dissipation and is designed for linearly tunable Gm with current mode load as one of the applications. The circuit exhibits HD3) of less than –43.7 dB, high current efficiency of 1.18 V-1 and Gm of 390 μS at 1 VGp-p @ 50 MHz. UMC 0.18 μm CMOS process technology is used for simulation at supply voltage of 1.8 V.
文摘A method to predict intermodulation (IM) products of two tone test based on Amplitude to amplitude (AM-AM) and amplitude to phase (AM-PM) diagrams of power amplifier is proposed in this paper. An RF power amplifier is mathe-matically modeled by a power series in order of 13. Coefficients of the transfer function are obtained by odd-order polynomial fitting of the transfer function of the power amplifier that is modeled by power series, with AM-AM and AM-PM diagrams. Because of considering AM-PM distortion, coefficients have become complex. By using this transfer function, analytical expressions of IM products are derived. Frequency effect of IM products are modeled in suggested method to estimate the effects of changing in input frequency on output. With the mean of this factor the model is able to predict IM products of wideband frequency input. Simulated results agree well with the predicted method in comparisons.
基金supported by the Natural Science Foundation of Guangdong Province(Nos.2023A1515010093)the Shenzhen Fundamental Research Program(Nos.JCYJ20220809170611004,20231121110828001 and 20231121113641002)the Taipei University of Technology-Shenzhen University Joint Research Program(No.2024001).
文摘In this paper,we have mainly studied the amplification effect of thulium-doped fiber amplifier(TDFA)at 2µm,and compared different amplification effects of the one-stage TDFA,two-stage TDFA and three-stage TDFA at proper conditions.The simulation results show that within the effective threshold,with the increase of the pump power,the amplification effect of the optical amplifier improves,but the signal-to-noise ratio(SNR)of the output signal decreases,in order to balance the gain benefit and noise coefficient of TDFA,we can use a multi-stage amplification structure.Three-stage backward-pumped series 2.06µm TDFA,whose slope efficiency can achieve 11%at certain condition.At 5.2 W pump power,the output signal gain of 2µm TDFA exceeds 20 dB,and the output SNR is higher than 32 dB.In addition,the effect of the optimum length of thulium-doped fiber on the amplification performance of 2µm TDFA is also analyzed in this paper.These simulation results are important for the experiment and design of 2µm TDFA.
文摘Photolithography has been a major enabler for the continuous shrink of the semiconductor manufacturing design rules.Throughout the years of the development of the photolithography,many new technologies have been invented and successfully implemented,such as image projection lithography,chemically amplified photoresist,phase shifting mask,optical proximity modeling and correction,etc.From 0.25μm technology to the current 7 nm technology,the linewidth has been shrunk from 250 nm to about 20 nm,or 12.5 times.Although imaging resolution is proportional to the illumination wavelength,with the new technologies,the wavelength has only been shrunk from 248 nm to 134.7 nm(193 nm immersion in water),less than 2 times.Would it mean that the imaging performance has been continuously declining?Or we have yet fully utilized the potential of the photolithography technology?In this paper,we will present a study on the key parameters and process window performance of the image projection photolithography from 0.25μm node to the current 7 nm node.
文摘Quasi-PID control method that is able to effectively inhibit the inherent tracking error of PI control method is proposed on the basis of a rounded theoretical analysis of a model of switching power amplifiers (SPAs). To avoid the harmful impacts of the circuit parameter variations and the random disturbances on quasi-PID control method, a single neuron is introduced to endow it with self-adaptability. Quasi-PID control method and the single neuron combine with each other perfectly, and their formation is named as single-neuron adaptive quasi-PID control method. Simulation and experimental results show that single-neuron adaptive quasi-PID control method can accurately track both the predictable and the unpredictable waveforms. Quantitative analysis demonstrates that the accuracy of single-neuron adaptive quasi-PID control method is comparable to that of linear power amplifiers (LPAs) and so can fulfill the requirements of some high-accuracy applications, such as protective relay test. Such accuracy is very difficult to be achieved by many modern control methods for converter controls. Compared with other modern control methods, the programming realization of single-neuron adaptive quasi-PID control method is more suitable for real-time applications and realization on low-end microprocessors for its simple structure and lower computational complexity.
基金supported by the Natural Science Research Project of Colleges and Universities in Anhui Province (No.KJ2021A0479)the Science Research Program of Anhui University of Finance and Economics (No.ACKYC22082)。
文摘We present a gain adaptive tuning method for fiber Raman amplifier(FRA) using two-stage neural networks(NNs) and double weights updates. After training the connection weights of two-stage NNs separately in training phase, the connection weights of the unified NN are updated again in verification phase according to error between the predicted and target gains to eliminate the inherent error of the NNs. The simulation results show that the mean of root mean square error(RMSE) and maximum error of gains are 0.131 d B and 0.281 d B, respectively. It shows that the method can realize adaptive adjustment function of FRA gain with high accuracy.
文摘A new circuit for realization of universal current-mode filter using current Follower Transconductance Amplifiers (CFTAs) is presented. The proposed circuit realizes current-mode low pass, high pass and band pass filter functions simultaneously with a single current source at the input. The band reject and all pass filters can also be obtained from the proposed circuit without any extra hardware. The proposed circuit employs three passive grounded elements and two CFTAs. Linear electronic control of natural frequency ω0 is available in the proposed circuit. The quality factor can be independently adjusted through grounded resistor. The proposed circuit employs two grounded capacitors and a grounded resistor along with two CFTAs. The grounded resistor can be replaced by an OTA based circuit for linear electronic control of quality factor Q0. The circuit exhibits low active and passive sensitivities for ω0 and Q0. Simulation results are obtained using PSPICE software which is in conformity with the theoretical findings.
文摘The reliability of electronic device is threatened in high power microwave (HPM) environment. In accordance with the situation that the emulation is ineffective in evaluating the accuracy and precision of the HPM effect to electronic device, the experimental method is used to resolve the problem. Low Noise Amplifier (LNA) and Limiter are selected as the objects for the experiments, the structural characteristic of the front-end of radar receiver is described, the phenomena and criterion are elaborated and analyzed using injection method due to its ability to get an accurate threshold avoiding the complex coupling, the basic principle of injection experiment is demonstrated, and the method and process of effect experiment about Low Noise Amplifier and Limiter are also explained. The experimental system is established, and the system is composed of low power microwave source such as TWT, test equipment for obtaining the effect parameters, and some of auxiliary equipments as camera, optical microscope or electron microscopy, attenuator, detector, and directional coupler etc. The microwave delivered from source is adjusted to the power infused by attenuator, and pour in the decanting point of effecter via directional coupler, then the couple signal created by directional coupler is input to the recording instrument after detecting by detector, finally the power of effecter is obtained. The value of power, which damages the effecter in the microwave pulse environment, is classified at the index of sensitivity, and the threshold is obtained by power diagnose and wave test. Some regular understandings of the HPM effect to electronic device are obtained based on the results of the experiments. It turns out that the index of electronic device is influenced significantly by the energy via front door coupling, the MOSFET made up of GaAs is the most wearing part to HPM in LNA, the damage threshold of LNA is about 40dBm under single pulse while in repetitive pulse the value is from 33.3dBm to 43.9dBm according to different wave band. The damage threshold of Limiter is about 56dBm to80dBm.
