Atomistic quantum simulation is performed to compare the performance of zero-Schottky-barrier and doped source-drain contacts carbon nanotube field effect transistors(CNTFETs) with strain applied. The doped source-dra...Atomistic quantum simulation is performed to compare the performance of zero-Schottky-barrier and doped source-drain contacts carbon nanotube field effect transistors(CNTFETs) with strain applied. The doped source-drain contact CNTFETs outperform the Schottky contact devices with and without strain applied. The off-state current in both types of contact is similar with and without strain applied. This is because both types of contact offer very similar potential barrier in off-state. However, the on-state current in doped contact devices is much higher due to better modulation of on-state potential profile, and its variation with strain is sensitive to the device contact type. The on/off current ratio and the inverse subthreshold slope are better with doped source-drain contact, and their variations with strain are relatively less sensitive to the device contact type. The channel transconductance and device switching performance are much better with doped source-drain contact, and their variations with strain are sensitive to device contact type.展开更多
Owing to the inherent advantages of low cost and high capacity,cobalt(Co)-free lithium(Li)-rich layered oxides have become one of the most promising cathodes for next-generation high-energy lithium-ion batteries.Howev...Owing to the inherent advantages of low cost and high capacity,cobalt(Co)-free lithium(Li)-rich layered oxides have become one of the most promising cathodes for next-generation high-energy lithium-ion batteries.However,these familial cathodes suffer from serious voltage decay due to many reasons,such as oxygen release and transition metal(TM)migration,which are closely related to nanoscale strain evolution.Here,by combining the synergistic effects of surface integration,bulk doping,and concentration gradient,we successfully construct a Co-free Li-rich layered cathode with a very small volumetric strain(1.05%)between 2.0 and 4.8 V,approaching the critical value of zero strain.Various characterizations indicate that the constructed zero-strain cathode can significantly suppress the TM migration,interfacial reactions,and structural degradation including cracks,lattice defects,phase evolution,and nanovoids,leading to improved voltage stability of Co-free Li-rich layered oxides during the prolonged cycles.This work provides a strategy to eliminate the lattice strain of Li-rich layered cathodes and facilitates the up-scaled application of the as-prepared cathode materials.展开更多
文摘Atomistic quantum simulation is performed to compare the performance of zero-Schottky-barrier and doped source-drain contacts carbon nanotube field effect transistors(CNTFETs) with strain applied. The doped source-drain contact CNTFETs outperform the Schottky contact devices with and without strain applied. The off-state current in both types of contact is similar with and without strain applied. This is because both types of contact offer very similar potential barrier in off-state. However, the on-state current in doped contact devices is much higher due to better modulation of on-state potential profile, and its variation with strain is sensitive to the device contact type. The on/off current ratio and the inverse subthreshold slope are better with doped source-drain contact, and their variations with strain are relatively less sensitive to the device contact type. The channel transconductance and device switching performance are much better with doped source-drain contact, and their variations with strain are sensitive to device contact type.
基金the funding supports of National Natural Science Foundation of China(Project 52004070,51874104)Key Technology and Supporting Platform of Genetic Engineering of Materials under States Key Project of Research and Development Plan of China(Project 2016YFB0700600)。
文摘Owing to the inherent advantages of low cost and high capacity,cobalt(Co)-free lithium(Li)-rich layered oxides have become one of the most promising cathodes for next-generation high-energy lithium-ion batteries.However,these familial cathodes suffer from serious voltage decay due to many reasons,such as oxygen release and transition metal(TM)migration,which are closely related to nanoscale strain evolution.Here,by combining the synergistic effects of surface integration,bulk doping,and concentration gradient,we successfully construct a Co-free Li-rich layered cathode with a very small volumetric strain(1.05%)between 2.0 and 4.8 V,approaching the critical value of zero strain.Various characterizations indicate that the constructed zero-strain cathode can significantly suppress the TM migration,interfacial reactions,and structural degradation including cracks,lattice defects,phase evolution,and nanovoids,leading to improved voltage stability of Co-free Li-rich layered oxides during the prolonged cycles.This work provides a strategy to eliminate the lattice strain of Li-rich layered cathodes and facilitates the up-scaled application of the as-prepared cathode materials.
