Low-order wavefront error account for a large proportion of wave aberrations.A compensation method for low order aberration of projection lithography objective based on Interior Point Method is presented.Compensation ...Low-order wavefront error account for a large proportion of wave aberrations.A compensation method for low order aberration of projection lithography objective based on Interior Point Method is presented.Compensation model between wavefront error and degree of movable lens freedom is established.Converting over-determined system to underdetermined system,the compensation is solved by Interior Point Method(IPM).The presented method is compared with direct solve the over-determined system.Then,other algorithm GA,EA and PS is compared with IPM.Simulation and experimental results show that the presented compensation method can obtained compensation with less residuals compared with direct solve the over-determined system.Also,the presented compensation method can reduce computation time and obtain results with less residuals compare with AGA,EA and PS.Moreover,after compensation,RMS of wavefront error of the experimental lithography projection objective decrease from 56.05 nm to 17.88 nm.展开更多
In contrast to uncoated substrate, a nonlinear relationship of phase shift with the thicknesses of the thin film makes the calculation of wavefront aberration complicated. A program is compiled to calculate the wavefr...In contrast to uncoated substrate, a nonlinear relationship of phase shift with the thicknesses of the thin film makes the calculation of wavefront aberration complicated. A program is compiled to calculate the wavefront aberration of multilayer thin film produced by thickness nonuniformity. The physical thickness and the optical phase change on reflection are considered. As an example, the wavefront aberration of the all-dielectric mirror is presented in ArF excimer lithography system with a typical thickness distribution. In addition, the wavefront errors of the thin film at wavelengths of 193 and 633 nm are compared in the one-piece and two-piece arrangements. Results show that the phase shift upon reflection of the thin film produced by thickness nonuniformity is very sensitive to the incident angle, wavelength, and polarization.展开更多
文摘Low-order wavefront error account for a large proportion of wave aberrations.A compensation method for low order aberration of projection lithography objective based on Interior Point Method is presented.Compensation model between wavefront error and degree of movable lens freedom is established.Converting over-determined system to underdetermined system,the compensation is solved by Interior Point Method(IPM).The presented method is compared with direct solve the over-determined system.Then,other algorithm GA,EA and PS is compared with IPM.Simulation and experimental results show that the presented compensation method can obtained compensation with less residuals compared with direct solve the over-determined system.Also,the presented compensation method can reduce computation time and obtain results with less residuals compare with AGA,EA and PS.Moreover,after compensation,RMS of wavefront error of the experimental lithography projection objective decrease from 56.05 nm to 17.88 nm.
基金supported by the National Natural Science Foundation of China under Grant Nos.60878045 and 10976030
文摘In contrast to uncoated substrate, a nonlinear relationship of phase shift with the thicknesses of the thin film makes the calculation of wavefront aberration complicated. A program is compiled to calculate the wavefront aberration of multilayer thin film produced by thickness nonuniformity. The physical thickness and the optical phase change on reflection are considered. As an example, the wavefront aberration of the all-dielectric mirror is presented in ArF excimer lithography system with a typical thickness distribution. In addition, the wavefront errors of the thin film at wavelengths of 193 and 633 nm are compared in the one-piece and two-piece arrangements. Results show that the phase shift upon reflection of the thin film produced by thickness nonuniformity is very sensitive to the incident angle, wavelength, and polarization.
