Halide perovskites is a recently emerged platform for the creation of efficient memristors.In turn,single-crystal inorganic perovskite would be new low-cost and flexible memory devices because of their excellent resis...Halide perovskites is a recently emerged platform for the creation of efficient memristors.In turn,single-crystal inorganic perovskite would be new low-cost and flexible memory devices because of their excellent resistive switching(RS)properties,without risk of chemical and mechanical stress-generated degradation,compared with the operational instability of general thin-film perovskite memristors.Moreover,miniaturization of perovskite memristors would be useful for creating high-density memory devices.Here we demonstrate the smallest CsPbBr3 perovskite nanomemristor with volatile unipolar RS characteristics which depends on the size of a single-crystal as a resistive layer due to its overall structural stability and low sensitivity to atmosphere conditions that helps to keep the stable RS switching over 1500 times with the lowest consumption power of 70 nW.To better understand the RS mechanism,we provide a comprehensive simulation of the evolution of mixed ionic-electronic charge carriers under current-voltage(I-V)tests using a one-dimensional drift-diffusion model.Because of the nonreactive nature of the contacts,the main mechanism of resistive state switching is potential barrier modulation of the Schottky contacts through the accumulation of migrating ions at the interfaces.Our findings pave the way for ultracompact memristors as well as shed light on RS mechanism in non-filamentary perovskitebased memory devices.展开更多
The integrity and fidelity of digital evidence are very important in live forensics. Previous studies have focused the uncertainty of live forensics based on different memory snapshots. However,this kind of method is ...The integrity and fidelity of digital evidence are very important in live forensics. Previous studies have focused the uncertainty of live forensics based on different memory snapshots. However,this kind of method is not effective in practice. In fact,memory images are usually acquired by using forensics tools instead of using snapshots. Therefore,the integrity and fidelity of live evidence should be evaluated during the acquisition process. In this paper,we study the problem in a novel viewpoint. Firstly,several definitions about memory acquisition measure error are introduced to describe the trusty. Then,we analyze the experimental error and propose some suggestions on how to reduce it. A novel method is also developed to calculate the system error in detail. The results of a case study on Windows 7 and VMware virtual machine show that the experimental error has good accuracy and precision,which demonstrate the efficacy of the proposed reducing methods. The system error is also evaluated,that is,it accounts for the whole error from 30% to 50%.展开更多
The ability to achieve multiple ferroic orderings can provide more selectivity for diverse applications,such as non-volatile memory,energy conversion,and pressure sensors.Molecular crystals occupy an important positio...The ability to achieve multiple ferroic orderings can provide more selectivity for diverse applications,such as non-volatile memory,energy conversion,and pressure sensors.Molecular crystals occupy an important position in ferroic materials owing to their structural diversity,ease of preparation,low cost,and mechanical flexibility.However,it has been a great challenge to satisfy multiple ferroic ordering in a single material that is constrained by stringent crystal symmetry requirements.Herein,we have achieved multiple ferroic ordering coexistence in(imidazolium)3PbBr5 by utilizing ingenious molecular orientation dynamics.Confined by the unique skeleton of corner-shared lead halide octahedrons,the molecular out-of-plane and in-plane reorientational motions of imidazolium cations modulated by thermal stimulation result in ferroelectric and ferroelastic phase transitions.This study offers instructive clues for designing multiple ferroic orderings in a single material for potential emerging applications.展开更多
This issue focuses on the topic“Storage System and Technology”.Data storage systems are an important part of highperformance computing(HPC).HPC cannot be separated from the support of high-performance storage system...This issue focuses on the topic“Storage System and Technology”.Data storage systems are an important part of highperformance computing(HPC).HPC cannot be separated from the support of high-performance storage systems and technologies.New storage technologies and techniques continue to be applied to HPC,such as non-volatile memory technologies,solid state storage,parallel I/O,storage performance and scalability,storage virtualization,and deduplication.展开更多
As nano-sized molecular oxides,polyoxometalates(POMs)hold great promise in non-volatile memory materials based on redox-active molecules.Materials processed from solution,by drop-casting,by embedding POMs in polymers,...As nano-sized molecular oxides,polyoxometalates(POMs)hold great promise in non-volatile memory materials based on redox-active molecules.Materials processed from solution,by drop-casting,by embedding POMs in polymers,or using layer-by-layer deposition techniques have thus been reported and successfully investigated.Almost all of these examples are electrostatically assembled materials.We herein propose an original route for the elaboration of robust covalent POM networks.展开更多
基金supported by the Russian Science Foundation(project number 24-62-00022)for data analysis and by Priority 2030 Federal Academic Leadership Program for samples synthesis.
文摘Halide perovskites is a recently emerged platform for the creation of efficient memristors.In turn,single-crystal inorganic perovskite would be new low-cost and flexible memory devices because of their excellent resistive switching(RS)properties,without risk of chemical and mechanical stress-generated degradation,compared with the operational instability of general thin-film perovskite memristors.Moreover,miniaturization of perovskite memristors would be useful for creating high-density memory devices.Here we demonstrate the smallest CsPbBr3 perovskite nanomemristor with volatile unipolar RS characteristics which depends on the size of a single-crystal as a resistive layer due to its overall structural stability and low sensitivity to atmosphere conditions that helps to keep the stable RS switching over 1500 times with the lowest consumption power of 70 nW.To better understand the RS mechanism,we provide a comprehensive simulation of the evolution of mixed ionic-electronic charge carriers under current-voltage(I-V)tests using a one-dimensional drift-diffusion model.Because of the nonreactive nature of the contacts,the main mechanism of resistive state switching is potential barrier modulation of the Schottky contacts through the accumulation of migrating ions at the interfaces.Our findings pave the way for ultracompact memristors as well as shed light on RS mechanism in non-filamentary perovskitebased memory devices.
基金Sponsored by the National Natural Science Foundation of China (Grant No.61303199)Natural Science Foundation of Shandong Province (Grant No.ZR2013FQ001 and ZR2011FQ030)+1 种基金Outstanding Research Award Fund for Young Scientists of Shandong Province,China (Grant No.BS2013DX010)Academy of Sciences Youth Fund Project of Shandong Province (Grant No.2013QN007)
文摘The integrity and fidelity of digital evidence are very important in live forensics. Previous studies have focused the uncertainty of live forensics based on different memory snapshots. However,this kind of method is not effective in practice. In fact,memory images are usually acquired by using forensics tools instead of using snapshots. Therefore,the integrity and fidelity of live evidence should be evaluated during the acquisition process. In this paper,we study the problem in a novel viewpoint. Firstly,several definitions about memory acquisition measure error are introduced to describe the trusty. Then,we analyze the experimental error and propose some suggestions on how to reduce it. A novel method is also developed to calculate the system error in detail. The results of a case study on Windows 7 and VMware virtual machine show that the experimental error has good accuracy and precision,which demonstrate the efficacy of the proposed reducing methods. The system error is also evaluated,that is,it accounts for the whole error from 30% to 50%.
基金supported by the National Natural Science Foundation of China(Grant 92056112 and 21991141)the Natural Science Foundation of Zhejiang Province(LZ20B010001).
文摘The ability to achieve multiple ferroic orderings can provide more selectivity for diverse applications,such as non-volatile memory,energy conversion,and pressure sensors.Molecular crystals occupy an important position in ferroic materials owing to their structural diversity,ease of preparation,low cost,and mechanical flexibility.However,it has been a great challenge to satisfy multiple ferroic ordering in a single material that is constrained by stringent crystal symmetry requirements.Herein,we have achieved multiple ferroic ordering coexistence in(imidazolium)3PbBr5 by utilizing ingenious molecular orientation dynamics.Confined by the unique skeleton of corner-shared lead halide octahedrons,the molecular out-of-plane and in-plane reorientational motions of imidazolium cations modulated by thermal stimulation result in ferroelectric and ferroelastic phase transitions.This study offers instructive clues for designing multiple ferroic orderings in a single material for potential emerging applications.
文摘This issue focuses on the topic“Storage System and Technology”.Data storage systems are an important part of highperformance computing(HPC).HPC cannot be separated from the support of high-performance storage systems and technologies.New storage technologies and techniques continue to be applied to HPC,such as non-volatile memory technologies,solid state storage,parallel I/O,storage performance and scalability,storage virtualization,and deduplication.
基金supported by Sorbonne Universiteby the CNRS.W.C.Poh was supported by the scholarship awarded by Nanyang Technological University,Singapore.
文摘As nano-sized molecular oxides,polyoxometalates(POMs)hold great promise in non-volatile memory materials based on redox-active molecules.Materials processed from solution,by drop-casting,by embedding POMs in polymers,or using layer-by-layer deposition techniques have thus been reported and successfully investigated.Almost all of these examples are electrostatically assembled materials.We herein propose an original route for the elaboration of robust covalent POM networks.
