Molybdenum disulfide（MoS2） has been stimulated in extensive researches due to its layered structure and the potential as an electrochemical energy material. However, the effects on electrochemical performance of con...Molybdenum disulfide（MoS2） has been stimulated in extensive researches due to its layered structure and the potential as an electrochemical energy material. However, the effects on electrochemical performance of concentration of MoS2 are rarely mentioned. In this paper, the effects of different concentrated layered MoS2 on the morphology and electrochemical properties of the composite of MoS2 and three-dimensional graphene（MoS2/3DG） were discussed. The results show that layered MoS2 was successfully compounded to 3DG and formed a vertical crosslinking structure. It can be observed that MoS2 nanosheets are vertically loaded on the inner and outer surface of graphee when the concentration of MoS2 is 0.20 mg/L. The specific capacitance of composite（MoS2（0.20 mg/L）/3 DG）reaches 2182.33 mF/cm^2 at the current density of 1 mA/cm^2, and the specific capacitance remains 116.83% after 5000 cycles. When the current density increased 100 times（from 1 mA/cm^2 to 100 mA/cm^2）, the specific capacitance retains 78.9%. Meanwhile, the hybrid energy storage devises can deliver an energy density of 130.34 Wh/m^2. The superior electrochemical properties are attributed to the synergistic effect of MoS2 and 3DG. Therefore, the material has a potential application on supercapacitor electrode material.展开更多
This study is devoted to the analysis of a one-dimensional time-dependent double-diffusive flow over a semi-infinite vertical plate, under a convective surface boundary condition. Using similarity variable, the govern...This study is devoted to the analysis of a one-dimensional time-dependent double-diffusive flow over a semi-infinite vertical plate, under a convective surface boundary condition. Using similarity variable, the governing nonlinear partial differential equations have been transformed into a set of coupled nonlinear ordinary differential equations, which are solved numerically by using shooting method alongside with Runge-Kutta integration scheme as embedded in Maple software programme. The numerical results of the skin-friction coefficient, the Nusselt and Sherwood numbers are discussed and depicted graphically.展开更多
This paper describes experimental results on the solidification process over the vertically positioned circular cylinder, placed in an aqueous solution of sodium nitrate, where the aqueous solution in the vessel is he...This paper describes experimental results on the solidification process over the vertically positioned circular cylinder, placed in an aqueous solution of sodium nitrate, where the aqueous solution in the vessel is heated from the bottom. After the initiation of solidification by cooling the cylinder below the liquidus temperature, the pure ice formation on the cylinder causes the rejection of solute into the surrounding aqueous solution. The solute enriched vertical fluid layer over the ice then falls on the bottom of the vessel due to its higher density, and accumulates there. This process results in the formation of solute rich and hot horizontal layer (heavy layer), underlying the relatively cold but less concentrated fluid layer (light layer). As this process advances, however, because of the continuing influx of solute rich fluid, the lower heavy layer occupies more space, and the interface of the two layers rises slowly. The pH indicator method has been successfully employed in order to visualize the flows during this process. In this report, we document the evolution of both temperature and flow fields in the aqueous solution quantitatively, as the solidification progresses and the density discontinuity of the two layers rises.展开更多
In this study we investigate the dynamic recovery effects in IRF9520 commercial p-channel power vertical double diffused metal-oxide semiconductor field-effect transistors（VDMOSFETs） subjected to negative bias tempe...In this study we investigate the dynamic recovery effects in IRF9520 commercial p-channel power vertical double diffused metal-oxide semiconductor field-effect transistors（VDMOSFETs） subjected to negative bias temperature（NBT）stressing under the particular pulsed bias. Particular values of the pulsed stress voltage frequency and duty cycle are chosen in order to analyze the recoverable and permanent components of stress-induced threshold voltage shift in detail. The results are discussed in terms of the mechanisms responsible for buildup of oxide charge and interface traps. The partial recovery during the low level of pulsed gate voltage is ascribed to the removal of recoverable component of degradation, i.e., to passivation/neutralization of shallow oxide traps that are not transformed into the deeper traps（permanent component）.Considering the value of characteristic time constant associated with complete removal of the recoverable component of degradation, it is shown that by selecting an appropriate combination of the frequency and duty cycle, the threshold voltage shifts induced under the pulsed negative bias temperature stress conditions can be significantly reduced, which may be utilized for improving the device lifetime in real application circuits.展开更多
A novel silicon carbide gate-controlled bipolar field effect composite transistor with poly silicon region(SiC GCBTP)is proposed.Different from the traditional electrode connection mode of SiC vertical diffused MOS(VD...A novel silicon carbide gate-controlled bipolar field effect composite transistor with poly silicon region(SiC GCBTP)is proposed.Different from the traditional electrode connection mode of SiC vertical diffused MOS(VDMOS),the P+region of P-well is connected with the gate in SiC GCBTP,and the polysilicon region is added between the P+region and the gate.By this method,additional minority carriers can be injected into the drift region at on-state,and the distribution of minority carriers in the drift region will be optimized,so the on-state current is increased.In terms of static characteristics,it has the same high breakdown voltage(811 V)as SiC VDMOS whose length of drift is 5.5μm.The on-state current of SiC GCBTP is 2.47×10^(-3)A/μm(V_(G)=10 V,V_(D)=10 V)which is 5.7 times of that of SiC IGBT and 36.4 times of that of SiC VDMOS.In terms of dynamic characteristics,the turn-on time of SiC GCBTP is only 0.425 ns.And the turn-off time of SiC GCBTP is similar to that of SIC insulated gate bipolar transistor(IGBT),which is 114.72 ns.展开更多
基金supported by the National Natural Science Foundation of China(Nos.51572184,51372160)the Shenzhen Science and Technology Foundation(No.JCYJ201419122040621)
文摘Molybdenum disulfide（MoS2） has been stimulated in extensive researches due to its layered structure and the potential as an electrochemical energy material. However, the effects on electrochemical performance of concentration of MoS2 are rarely mentioned. In this paper, the effects of different concentrated layered MoS2 on the morphology and electrochemical properties of the composite of MoS2 and three-dimensional graphene（MoS2/3DG） were discussed. The results show that layered MoS2 was successfully compounded to 3DG and formed a vertical crosslinking structure. It can be observed that MoS2 nanosheets are vertically loaded on the inner and outer surface of graphee when the concentration of MoS2 is 0.20 mg/L. The specific capacitance of composite（MoS2（0.20 mg/L）/3 DG）reaches 2182.33 mF/cm^2 at the current density of 1 mA/cm^2, and the specific capacitance remains 116.83% after 5000 cycles. When the current density increased 100 times（from 1 mA/cm^2 to 100 mA/cm^2）, the specific capacitance retains 78.9%. Meanwhile, the hybrid energy storage devises can deliver an energy density of 130.34 Wh/m^2. The superior electrochemical properties are attributed to the synergistic effect of MoS2 and 3DG. Therefore, the material has a potential application on supercapacitor electrode material.
文摘This study is devoted to the analysis of a one-dimensional time-dependent double-diffusive flow over a semi-infinite vertical plate, under a convective surface boundary condition. Using similarity variable, the governing nonlinear partial differential equations have been transformed into a set of coupled nonlinear ordinary differential equations, which are solved numerically by using shooting method alongside with Runge-Kutta integration scheme as embedded in Maple software programme. The numerical results of the skin-friction coefficient, the Nusselt and Sherwood numbers are discussed and depicted graphically.
文摘This paper describes experimental results on the solidification process over the vertically positioned circular cylinder, placed in an aqueous solution of sodium nitrate, where the aqueous solution in the vessel is heated from the bottom. After the initiation of solidification by cooling the cylinder below the liquidus temperature, the pure ice formation on the cylinder causes the rejection of solute into the surrounding aqueous solution. The solute enriched vertical fluid layer over the ice then falls on the bottom of the vessel due to its higher density, and accumulates there. This process results in the formation of solute rich and hot horizontal layer (heavy layer), underlying the relatively cold but less concentrated fluid layer (light layer). As this process advances, however, because of the continuing influx of solute rich fluid, the lower heavy layer occupies more space, and the interface of the two layers rises slowly. The pH indicator method has been successfully employed in order to visualize the flows during this process. In this report, we document the evolution of both temperature and flow fields in the aqueous solution quantitatively, as the solidification progresses and the density discontinuity of the two layers rises.
基金Project supported by the Fund from the Ministry of Education,Science and Technological Development of the Republic of Serbia(Grant Nos.OI-171026 and TR-32026)the Ei PCB Factory,Ni
文摘In this study we investigate the dynamic recovery effects in IRF9520 commercial p-channel power vertical double diffused metal-oxide semiconductor field-effect transistors（VDMOSFETs） subjected to negative bias temperature（NBT）stressing under the particular pulsed bias. Particular values of the pulsed stress voltage frequency and duty cycle are chosen in order to analyze the recoverable and permanent components of stress-induced threshold voltage shift in detail. The results are discussed in terms of the mechanisms responsible for buildup of oxide charge and interface traps. The partial recovery during the low level of pulsed gate voltage is ascribed to the removal of recoverable component of degradation, i.e., to passivation/neutralization of shallow oxide traps that are not transformed into the deeper traps（permanent component）.Considering the value of characteristic time constant associated with complete removal of the recoverable component of degradation, it is shown that by selecting an appropriate combination of the frequency and duty cycle, the threshold voltage shifts induced under the pulsed negative bias temperature stress conditions can be significantly reduced, which may be utilized for improving the device lifetime in real application circuits.
基金Project supported in part by the Science Foundation for Distinguished Young Scholars of Shaanxi Province,China(Grant No.2018JC-017)111 Project(Grant No.B12026)。
文摘A novel silicon carbide gate-controlled bipolar field effect composite transistor with poly silicon region(SiC GCBTP)is proposed.Different from the traditional electrode connection mode of SiC vertical diffused MOS(VDMOS),the P+region of P-well is connected with the gate in SiC GCBTP,and the polysilicon region is added between the P+region and the gate.By this method,additional minority carriers can be injected into the drift region at on-state,and the distribution of minority carriers in the drift region will be optimized,so the on-state current is increased.In terms of static characteristics,it has the same high breakdown voltage(811 V)as SiC VDMOS whose length of drift is 5.5μm.The on-state current of SiC GCBTP is 2.47×10^(-3)A/μm(V_(G)=10 V,V_(D)=10 V)which is 5.7 times of that of SiC IGBT and 36.4 times of that of SiC VDMOS.In terms of dynamic characteristics,the turn-on time of SiC GCBTP is only 0.425 ns.And the turn-off time of SiC GCBTP is similar to that of SIC insulated gate bipolar transistor(IGBT),which is 114.72 ns.
