The results of the metal-insulator transition （MIT） induced by impurity concentration are presented in the case of metallic and insulating samples 70Ge：Ga p-type. The eight samples studied have Ga concentrations N ...The results of the metal-insulator transition （MIT） induced by impurity concentration are presented in the case of metallic and insulating samples 70Ge：Ga p-type. The eight samples studied have Ga concentrations N ranging from 1.848 × 1017 to 1.912 × 10^17 cm-3. The conductivity measurements were carried out at low temperature in the range 1 to 0.019 K. We provide physical explanations to explain the behaviors of the temperature dependence of the electrical conductivity in both sides of the MIT. The data are for a 70Ge：Ga sample prepared and reported by Itoh et aL in Ref. [Itoh K M, Watanabe M, Ootuka Y, et al. J Phys Soc Jpn, 2004, 73（1）： 173].展开更多
文摘The results of the metal-insulator transition （MIT） induced by impurity concentration are presented in the case of metallic and insulating samples 70Ge：Ga p-type. The eight samples studied have Ga concentrations N ranging from 1.848 × 1017 to 1.912 × 10^17 cm-3. The conductivity measurements were carried out at low temperature in the range 1 to 0.019 K. We provide physical explanations to explain the behaviors of the temperature dependence of the electrical conductivity in both sides of the MIT. The data are for a 70Ge：Ga sample prepared and reported by Itoh et aL in Ref. [Itoh K M, Watanabe M, Ootuka Y, et al. J Phys Soc Jpn, 2004, 73（1）： 173].
