A single electron transistor based on a silicon-on-insulator is successfully fabricated with electron-beam nano- lithography, inductively coupled plasma etching, thermal oxidation and other techniques. The unique desi...A single electron transistor based on a silicon-on-insulator is successfully fabricated with electron-beam nano- lithography, inductively coupled plasma etching, thermal oxidation and other techniques. The unique design of the pattern inversion is used, and the pattern is transferred to be negative in the electron-beam lithography step. The oxidation process is used to form the silicon oxide tunneling barriers, and to further reduce the effective size of the quantum dot. Combinations of these methods offer advantages of good size controllability and accuracy, high reproducibility, low cost, large-area contacts, allowing batch fabrication of single electron transistors and good integration with a radio-frequency tank circuit. The fabricated single electron transistor with a quantum dot about 50nto in diameter is demonstrated to operate at temperatures up to 70K. The charging energy of the Coulomb island is about 12.5meV.展开更多
An enhanced small-signal model is introduced to model the influence of the impact ionization effect on the performance of In As/Al Sb HFET, in which an optimized fitting function D（ωτi） in the form of least square...An enhanced small-signal model is introduced to model the influence of the impact ionization effect on the performance of In As/Al Sb HFET, in which an optimized fitting function D（ωτi） in the form of least square approximation is proposed in order to further enhance the accuracy in modeling the frequency dependency of the impact ionization effect.The enhanced model with D（ωτi） can accurately characterize the key S parameters of In As/Al Sb HFET in a wide frequency range with a very low error function EF. It is demonstrated that the new fitting function D（ωτi） is helpful in further improving the modeling accuracy degree.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 11074280 and 11403084the Instrument Developing Project of Chinese Academy of Sciences under Grant No YZ201152+2 种基金the Fundamental Research Funds for Central Universities under Grant Nos JUSRP51323B and JUDCF12032the Joint Innovation Project of Jiangsu Province under Grant No BY2013015-19the Graduate Student Innovation Program for Universities of Jiangsu Province under Grant No CXLX12_0724
文摘A single electron transistor based on a silicon-on-insulator is successfully fabricated with electron-beam nano- lithography, inductively coupled plasma etching, thermal oxidation and other techniques. The unique design of the pattern inversion is used, and the pattern is transferred to be negative in the electron-beam lithography step. The oxidation process is used to form the silicon oxide tunneling barriers, and to further reduce the effective size of the quantum dot. Combinations of these methods offer advantages of good size controllability and accuracy, high reproducibility, low cost, large-area contacts, allowing batch fabrication of single electron transistors and good integration with a radio-frequency tank circuit. The fabricated single electron transistor with a quantum dot about 50nto in diameter is demonstrated to operate at temperatures up to 70K. The charging energy of the Coulomb island is about 12.5meV.
文摘An enhanced small-signal model is introduced to model the influence of the impact ionization effect on the performance of In As/Al Sb HFET, in which an optimized fitting function D（ωτi） in the form of least square approximation is proposed in order to further enhance the accuracy in modeling the frequency dependency of the impact ionization effect.The enhanced model with D（ωτi） can accurately characterize the key S parameters of In As/Al Sb HFET in a wide frequency range with a very low error function EF. It is demonstrated that the new fitting function D（ωτi） is helpful in further improving the modeling accuracy degree.
