Atom–nanowire coupling system is a promising platform for optical quantum information processing. Unlike the previous designing of optical switch and transistor requiring a dedicated multi-level emitter and high fine...Atom–nanowire coupling system is a promising platform for optical quantum information processing. Unlike the previous designing of optical switch and transistor requiring a dedicated multi-level emitter and high fineness microcavity,a new proposal is put forward which contains a single two-level atom asymmetrically coupled with two nanowires. Singleemitter manipulation of photonic signals for bilateral coherent incident is clear now, since we specify atomic saturation nonlinearity into three contributions which brings us a new approach to realizing light-controlled-light at weak light and single-atom levels. An efficient optically controllable switch based on self-matching-induced-block and a concise optical transistor are proposed. Our findings show potential applications in full-optical devices.展开更多
We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is ...We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a controllable electromigration process and the individual silicon quantum dot in the junction is deter- mined to be a Si 170 cluster. Differential conductance as a function of the bias and gate voltage clearly shows the Coulomb diamond which confirms that the transport is dominated by a single silicon quantum dot. It is found that the charging energy can be as large as 300meV, which is a result of the large capacitance of a small silicon quantum dot （-1.8 nm）. This large Coulomb interaction can potentially enable a single electron transistor to work at room temperature. The level spacing of the excited state can be as large as 10meV, which enables us to manipulate individual spin via an external magnetic field. The resulting Zeeman splitting is measured and the g factor of 2.3 is obtained, suggesting relatively weak electron-electron interaction in the silicon quantum dot which is beneficial for spin coherence time.展开更多
A simple and effective approach to improve the switching characteristics of AlGaN/AlN/GaN heterostructure field effect transistors （HFETs） by applying a voltage bias on the substrate is presented. With the increase ...A simple and effective approach to improve the switching characteristics of AlGaN/AlN/GaN heterostructure field effect transistors （HFETs） by applying a voltage bias on the substrate is presented. With the increase of the substrate bias, the OFF-state drain current is much reduced and the ON-state current keeps constant. Both the ON/OFF current ratio and the subthreshold swing are demonstrated to be greatly improved. With the thinned substrate, the improvement of the switching characteristics with the substrate bias is found to be even greater. The above improvements of the switching characteristics are attributed to the interaction between the substrate bias induced electrical field and the bulk traps in the GaN buffer layer, which reduces the conductivity of the GaN buffer layer.展开更多
Nitrogen doping is a promising way to modulate the electrical properties of graphene to realize graphene-based electronics and promise fascinating properties and applications.Herein,we report a method to noncovalently...Nitrogen doping is a promising way to modulate the electrical properties of graphene to realize graphene-based electronics and promise fascinating properties and applications.Herein,we report a method to noncovalently assembly titanium(Ⅳ) bis(ammoniumlactato) dihydroxide(Ti complex) on nitrogen-doped graphene to create a reliable hybrids which can be used as a reversible chemical induced switching.As the adsorption and desorption of Ti complex in sequential treatments,the conductance of the nitrogen-doped graphene transistors was finely modulated.Control experiments with pristine graphene clearly demonstrated the important effort of the nitrogen in this chemical sensor.Under optimized conditions,nitrogen-doped graphene transistors open up new ways to develop multifunctional devices with high sensitivity.展开更多
A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor（HEMT） switch.The new extraction method is verified by comparing the simulated S-parameters with ...A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor（HEMT） switch.The new extraction method is verified by comparing the simulated S-parameters with the measured data over the 5-40 GHz frequency range.The percentage errors E（ij） within 3.83% show the great agreement between the simulated S-parameters and the measured data.展开更多
In this paper, the design and analysis of a new low noise charge sensitive preamplifier for silicon strip, Si(Li), CdZnTe and CsI detectors etc. with switch control feedback resistance were described, the entire syste...In this paper, the design and analysis of a new low noise charge sensitive preamplifier for silicon strip, Si(Li), CdZnTe and CsI detectors etc. with switch control feedback resistance were described, the entire system to be built using the CMOS transistors. The circuit configuration of the CSP proposed in this paper can be adopted to develop CMOS-based Application Specific Integrated Circuit further for Front End Electronics of read-out system of nuclear physics, particle physics and astrophysics research, etc. This work is an implemented design that we succeed after a simulation to obtain a rise time less than 3ns, the output resistance less than 94? and the linearity almost good.展开更多
A soft switching three-transistor push-pull(TTPP)converter is proposed in this paper. The 3rd transistor is inserted in the primary side of a traditional push-pull converter. Two primitive transistors can achieve zero...A soft switching three-transistor push-pull(TTPP)converter is proposed in this paper. The 3rd transistor is inserted in the primary side of a traditional push-pull converter. Two primitive transistors can achieve zero-voltage-switching (ZVS) easily under a wide load range, the 3rd transistor can also realize zero-voltage-switching assisted by leakage inductance. The rated voltage of the 3rd transistor is half of that of the main transistors. The operation theory is explained in detail. The soft-switching realization conditions are derived. An 800 W with 83.3 kHz switching frequency prototype has been built. The experimental result is provided to verify the analysis.展开更多
Organic ferroelectric field-effect transistors （OFeFETs） are regarded as a promising technology for low-cost flexible memories. However, the electrical instability is still a critical obstacle, which limits the comm...Organic ferroelectric field-effect transistors （OFeFETs） are regarded as a promising technology for low-cost flexible memories. However, the electrical instability is still a critical obstacle, which limits the commercialization process. Based on already established models for polarization in ferroelectrics and charge transport in OFeFETs, simulation work is performed to determine the influence of polarization fatigue and ferroelectric switching transient on electrical characteristics in OFeFETs. The polarization fatigue results in the decrease of the on-state drain current and the memory window width and thus degrades the memory performance. The output measurements during the ferroelectric switching process show a hysteresis due to the instable polarization. In the on/off measurements, a large writing/erasing pulse frequency weakens the polarization modulation and thus results in a small separation between on- and off-state drain currents. According to the electrical properties of the ferroelectric layer, suggestions are given to obtain optimal electrical characterization for OFeFETs.展开更多
Routing resources are the major bottlenecks in improving the performance and power consumption of the current FPGAs. Recently reported researches have shown that carbon nanotube field effect transistors(CNFETs) have c...Routing resources are the major bottlenecks in improving the performance and power consumption of the current FPGAs. Recently reported researches have shown that carbon nanotube field effect transistors(CNFETs) have considerable potentials for improving the delay and power consumption of the modern FPGAs. In this paper, hybrid CNFET-CMOS architecture is presented for FPGAs and then this architecture is evaluated to be used in modern FPGAs. In addition, we have designed and parameterized the CNFET-based FPGA switches and calibrated them for being utilized in FPGAs at 45 nm, 22 nm and 16 nm technology nodes.Simulation results show that the CNFET-based FPGA switches improve the current FPGAs in terms of performance, power consumption and immunity to process and temperature variations. Simulation results and analyses also demonstrate that the performance of the FPGAs is improved about 30%, on average and the average and leakage power consumptions are reduced more than 6% and 98% respectively when the CNFET switches are used instead of MOSFET FPGA switches. Moreover, this technique leads to more than 20.31%smaller area. It is worth mentioning that the advantages of CNFET-based FPGAs are more considerable when the size of FPGAs grows and also when the technology node becomes smaller.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11864018 and 11574229)the Scientific Research Foundation of Education Department of Jiangxi Province,China(Grant No.GJJ170645)the Doctor Startup Fund of the Natural Science of Jinggangshan University,China(Grant No.JZB16003)
文摘Atom–nanowire coupling system is a promising platform for optical quantum information processing. Unlike the previous designing of optical switch and transistor requiring a dedicated multi-level emitter and high fineness microcavity,a new proposal is put forward which contains a single two-level atom asymmetrically coupled with two nanowires. Singleemitter manipulation of photonic signals for bilateral coherent incident is clear now, since we specify atomic saturation nonlinearity into three contributions which brings us a new approach to realizing light-controlled-light at weak light and single-atom levels. An efficient optically controllable switch based on self-matching-induced-block and a concise optical transistor are proposed. Our findings show potential applications in full-optical devices.
基金Supported by the National Key Research and Development Program of China under Grant No 2017YFA0303200the National Natural Science Foundation of China under Grant Nos U1732273,U1732159,91421109,91622115,11522432,11574217 and 61774133the Natural Science Foundation of Jiangsu Province under Grant No BK20160659
文摘We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a controllable electromigration process and the individual silicon quantum dot in the junction is deter- mined to be a Si 170 cluster. Differential conductance as a function of the bias and gate voltage clearly shows the Coulomb diamond which confirms that the transport is dominated by a single silicon quantum dot. It is found that the charging energy can be as large as 300meV, which is a result of the large capacitance of a small silicon quantum dot （-1.8 nm）. This large Coulomb interaction can potentially enable a single electron transistor to work at room temperature. The level spacing of the excited state can be as large as 10meV, which enables us to manipulate individual spin via an external magnetic field. The resulting Zeeman splitting is measured and the g factor of 2.3 is obtained, suggesting relatively weak electron-electron interaction in the silicon quantum dot which is beneficial for spin coherence time.
基金supported by the National Natural Science Foundation of China(Grant Nos.11174182 and 61306113)the Specialized Research Fund for the Doctoral Program of Higher Education,China(Grant No.20110131110005)
文摘A simple and effective approach to improve the switching characteristics of AlGaN/AlN/GaN heterostructure field effect transistors （HFETs） by applying a voltage bias on the substrate is presented. With the increase of the substrate bias, the OFF-state drain current is much reduced and the ON-state current keeps constant. Both the ON/OFF current ratio and the subthreshold swing are demonstrated to be greatly improved. With the thinned substrate, the improvement of the switching characteristics with the substrate bias is found to be even greater. The above improvements of the switching characteristics are attributed to the interaction between the substrate bias induced electrical field and the bulk traps in the GaN buffer layer, which reduces the conductivity of the GaN buffer layer.
文摘Nitrogen doping is a promising way to modulate the electrical properties of graphene to realize graphene-based electronics and promise fascinating properties and applications.Herein,we report a method to noncovalently assembly titanium(Ⅳ) bis(ammoniumlactato) dihydroxide(Ti complex) on nitrogen-doped graphene to create a reliable hybrids which can be used as a reversible chemical induced switching.As the adsorption and desorption of Ti complex in sequential treatments,the conductance of the nitrogen-doped graphene transistors was finely modulated.Control experiments with pristine graphene clearly demonstrated the important effort of the nitrogen in this chemical sensor.Under optimized conditions,nitrogen-doped graphene transistors open up new ways to develop multifunctional devices with high sensitivity.
文摘A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor（HEMT） switch.The new extraction method is verified by comparing the simulated S-parameters with the measured data over the 5-40 GHz frequency range.The percentage errors E（ij） within 3.83% show the great agreement between the simulated S-parameters and the measured data.
基金Supported in part by the Third World Academy of Sciences, in part by the Institute of Modern Physics, Chinese Academy of Sciencesin part by the National Natural Science Foundation of China (10675153)
文摘In this paper, the design and analysis of a new low noise charge sensitive preamplifier for silicon strip, Si(Li), CdZnTe and CsI detectors etc. with switch control feedback resistance were described, the entire system to be built using the CMOS transistors. The circuit configuration of the CSP proposed in this paper can be adopted to develop CMOS-based Application Specific Integrated Circuit further for Front End Electronics of read-out system of nuclear physics, particle physics and astrophysics research, etc. This work is an implemented design that we succeed after a simulation to obtain a rise time less than 3ns, the output resistance less than 94? and the linearity almost good.
文摘A soft switching three-transistor push-pull(TTPP)converter is proposed in this paper. The 3rd transistor is inserted in the primary side of a traditional push-pull converter. Two primitive transistors can achieve zero-voltage-switching (ZVS) easily under a wide load range, the 3rd transistor can also realize zero-voltage-switching assisted by leakage inductance. The rated voltage of the 3rd transistor is half of that of the main transistors. The operation theory is explained in detail. The soft-switching realization conditions are derived. An 800 W with 83.3 kHz switching frequency prototype has been built. The experimental result is provided to verify the analysis.
基金supported by the National Key Technologies R&D Program,China(Grant No.2009ZX02302-002)the National Natural Science Foundation of China(Grant Nos.61376108,61076076,and 61076068)+2 种基金NSAF,China(Grant No.U1430106)the Science and Technology Commission of Shanghai Municipality,China(Grant No.13NM1400600)Zhuo Xue Plan in Fudan University,China
文摘Organic ferroelectric field-effect transistors （OFeFETs） are regarded as a promising technology for low-cost flexible memories. However, the electrical instability is still a critical obstacle, which limits the commercialization process. Based on already established models for polarization in ferroelectrics and charge transport in OFeFETs, simulation work is performed to determine the influence of polarization fatigue and ferroelectric switching transient on electrical characteristics in OFeFETs. The polarization fatigue results in the decrease of the on-state drain current and the memory window width and thus degrades the memory performance. The output measurements during the ferroelectric switching process show a hysteresis due to the instable polarization. In the on/off measurements, a large writing/erasing pulse frequency weakens the polarization modulation and thus results in a small separation between on- and off-state drain currents. According to the electrical properties of the ferroelectric layer, suggestions are given to obtain optimal electrical characterization for OFeFETs.
文摘Routing resources are the major bottlenecks in improving the performance and power consumption of the current FPGAs. Recently reported researches have shown that carbon nanotube field effect transistors(CNFETs) have considerable potentials for improving the delay and power consumption of the modern FPGAs. In this paper, hybrid CNFET-CMOS architecture is presented for FPGAs and then this architecture is evaluated to be used in modern FPGAs. In addition, we have designed and parameterized the CNFET-based FPGA switches and calibrated them for being utilized in FPGAs at 45 nm, 22 nm and 16 nm technology nodes.Simulation results show that the CNFET-based FPGA switches improve the current FPGAs in terms of performance, power consumption and immunity to process and temperature variations. Simulation results and analyses also demonstrate that the performance of the FPGAs is improved about 30%, on average and the average and leakage power consumptions are reduced more than 6% and 98% respectively when the CNFET switches are used instead of MOSFET FPGA switches. Moreover, this technique leads to more than 20.31%smaller area. It is worth mentioning that the advantages of CNFET-based FPGAs are more considerable when the size of FPGAs grows and also when the technology node becomes smaller.
