Quasicrystals （QCs） are sensitive to the piezoelectric （PE） effect. This paper studies static deformation of a multilayered one-dimensional （1D） hexagonal QC plate with the PE effect. The exact closed-form solut...Quasicrystals （QCs） are sensitive to the piezoelectric （PE） effect. This paper studies static deformation of a multilayered one-dimensional （1D） hexagonal QC plate with the PE effect. The exact closed-form solutions of the extended displacement and traction for a homogeneous piezoelectric quasicrystal （PQC）plate are derived from an eigensystem. The general solutions for multilayered PQC plates are then obtained using the propagator matrix method when mechanical and electrical loads are applied on the top surface of the plate. Numerical examples for several sandwich plates made up of PQC, PE, and QC materials are provided to show the effect of stacking sequence on phonon, phason, and electric fields under mechanical and electrical loads, which is useful in designing new composites for engineering structures.展开更多
The voltage was recorded to investigate the influence of the static magnetic field on droplet evolution during the mag-netically controlled electroslag remelting （MC-ESR） process. MC-ESR experiments were carried out...The voltage was recorded to investigate the influence of the static magnetic field on droplet evolution during the mag-netically controlled electroslag remelting （MC-ESR） process. MC-ESR experiments were carried out under differentremelting current, and transverse static magnetic fields （TSMF） of 85 mT, 130 mT and 160 mT were superimposed.Statistical work was performed to obtain the quantitative data of the droplets. The ASPEX Explorer was utilized toinvestigate the inclusions evolution of GCr15 ingots. The number of the droplets was 31 in 20 s during the traditional ESRprocess and reached 50 and 51 under the MC-ESR process with the TSMF of 85 mT and 130 mT, respectively. Whencompared the traditional ESR process with the MC-ESR process, the inclusions amount reduced 67%.展开更多
Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flu...Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.展开更多
Chromium is a harmful contaminant showing mutagenicity and carcinogenicity.Therefore,detection of chromium requires the development of low-cost and high-sensitivity sensors.Herein,blue-fluorescent carbon quantum dots ...Chromium is a harmful contaminant showing mutagenicity and carcinogenicity.Therefore,detection of chromium requires the development of low-cost and high-sensitivity sensors.Herein,blue-fluorescent carbon quantum dots were synthesized by one-step hydrothermal method from alkali-soluble Poria cocos polysaccharide,which is green source,cheap and easy to obtain,and has no pharmacological activity due to low water solubility.These carbon quantum dots exhibit good fluorescence stability,water solubility,anti-interference and low cytotoxicity,and can be specifically combined with the detection of Cr(Ⅵ)to form a non-fluorescent complex that causes fluorescence quenching,so they can be used as a label-free nanosensor.High-sensitivity detection of Cr(Ⅵ)was achieved through internal filtering and static quenching effects.The fluorescence quenching degree of carbon dots fluorescent probe showed a good linear relationship with Cr(Ⅵ)concentration in the range of 1-100μM.The linear equation was F;/F=0.9942+0.01472[Cr(Ⅵ)](R;=0.9922),and the detection limit can be as low as 0.25μM(S/N=3),which has been successfully applied to Cr(Ⅵ)detection in actual water samples herein.展开更多
Long steel piles with large diameters have been more widely used in the field of ocean engineering. Owing to the pile with a large diameter, soil plug development during pile driving has great influences on pile drive...Long steel piles with large diameters have been more widely used in the field of ocean engineering. Owing to the pile with a large diameter, soil plug development during pile driving has great influences on pile driveability and bearing capacity. The response of soil plug developed inside the open-ended pipe pile during the dynamic condition of pile-driving is different from the response under the static condition of loading during service. This paper addresses the former aspect. A numerical procedure for soil plug effect prediction and pile driveabihty analysis is proposed and described. By taking into consideration of the pile dimension effect on side and tip resistance, this approach introduces a dimensional coefficient to the conventional static eqnihbrium equations for the plug differential unit and proposes an improved static equity method for the plug effect prediction. At the same time, this approach introduces a simplified model by use of one-dimensional stress wave equation to simulate the interaction between soil plug and pile inner wall. The proposed approach has been applied in practical engineering analyses. Results show that the calculated plug effect and pile driveabihty based on the proposed approach agree well with the observed data.展开更多
This paper develops a new simulation technique to characterize single event effects on semiconductor devices. The technique used to calculate the single event effects is developed according to the physical interaction...This paper develops a new simulation technique to characterize single event effects on semiconductor devices. The technique used to calculate the single event effects is developed according to the physical interaction mechanism of a single event effect. An application of the first principles simulation technique is performed to predict the ground-test single event upset effect on field-programmable gate arrays based on 0.25μm advanced complementary metal-oxidesemiconductor technology. The agreement between the single event upset cross section accessed from a broad-beam heavy ion experiment and simulation shows that the simulation technique could be used to characterize the single event effects induced by heavy ions on a semiconductor device.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.11502123 and11262012)the Natural Science Foundation of Inner Mongolia Autonomous Region of China(No.2015JQ01)
文摘Quasicrystals （QCs） are sensitive to the piezoelectric （PE） effect. This paper studies static deformation of a multilayered one-dimensional （1D） hexagonal QC plate with the PE effect. The exact closed-form solutions of the extended displacement and traction for a homogeneous piezoelectric quasicrystal （PQC）plate are derived from an eigensystem. The general solutions for multilayered PQC plates are then obtained using the propagator matrix method when mechanical and electrical loads are applied on the top surface of the plate. Numerical examples for several sandwich plates made up of PQC, PE, and QC materials are provided to show the effect of stacking sequence on phonon, phason, and electric fields under mechanical and electrical loads, which is useful in designing new composites for engineering structures.
基金financial support of the National Key Research and Development Program of China(No.2016YFB0300401)the National Natural Science Foundation of China(Nos.U1732276 and 51704193)+2 种基金the General Financial Grant from the China Postdoctoral Science Foundation(No.2017M621431)the Science and Technology Commission of Shanghai Municipality(No.15520711000)Independent Research and Development Project of State Key of Advanced Special Steel,Shanghai University(SKLASS2015-Z021,SELF-2014-02)
文摘The voltage was recorded to investigate the influence of the static magnetic field on droplet evolution during the mag-netically controlled electroslag remelting （MC-ESR） process. MC-ESR experiments were carried out under differentremelting current, and transverse static magnetic fields （TSMF） of 85 mT, 130 mT and 160 mT were superimposed.Statistical work was performed to obtain the quantitative data of the droplets. The ASPEX Explorer was utilized toinvestigate the inclusions evolution of GCr15 ingots. The number of the droplets was 31 in 20 s during the traditional ESRprocess and reached 50 and 51 under the MC-ESR process with the TSMF of 85 mT and 130 mT, respectively. Whencompared the traditional ESR process with the MC-ESR process, the inclusions amount reduced 67%.
基金supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices,China(Grant No.KFJJ201306)
文摘Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.
基金financially supported by the Natural Science Foundation of Anhui University of Chinese Medicine (Grant No.: 2018zrzd04)Anhui Provincial Natural Science Foundation (Grant No.: 1908085QH351)+2 种基金Major Science and Technology Projects of Anhui Province (Grant No.: 18030801131)National Key Research and Development Project (Grant No.: 2017YFC1701600)Anhui Province’s Central Special Fund for Local Science and Technology Development (Grant No.: 201907d07050002)
文摘Chromium is a harmful contaminant showing mutagenicity and carcinogenicity.Therefore,detection of chromium requires the development of low-cost and high-sensitivity sensors.Herein,blue-fluorescent carbon quantum dots were synthesized by one-step hydrothermal method from alkali-soluble Poria cocos polysaccharide,which is green source,cheap and easy to obtain,and has no pharmacological activity due to low water solubility.These carbon quantum dots exhibit good fluorescence stability,water solubility,anti-interference and low cytotoxicity,and can be specifically combined with the detection of Cr(Ⅵ)to form a non-fluorescent complex that causes fluorescence quenching,so they can be used as a label-free nanosensor.High-sensitivity detection of Cr(Ⅵ)was achieved through internal filtering and static quenching effects.The fluorescence quenching degree of carbon dots fluorescent probe showed a good linear relationship with Cr(Ⅵ)concentration in the range of 1-100μM.The linear equation was F;/F=0.9942+0.01472[Cr(Ⅵ)](R;=0.9922),and the detection limit can be as low as 0.25μM(S/N=3),which has been successfully applied to Cr(Ⅵ)detection in actual water samples herein.
基金supported by the National Natural Science Foundation of China (Grant No.50309009)the National High Technology Research and Development Program of China(863 Program,Grant No.2004AA616100)
文摘Long steel piles with large diameters have been more widely used in the field of ocean engineering. Owing to the pile with a large diameter, soil plug development during pile driving has great influences on pile driveability and bearing capacity. The response of soil plug developed inside the open-ended pipe pile during the dynamic condition of pile-driving is different from the response under the static condition of loading during service. This paper addresses the former aspect. A numerical procedure for soil plug effect prediction and pile driveabihty analysis is proposed and described. By taking into consideration of the pile dimension effect on side and tip resistance, this approach introduces a dimensional coefficient to the conventional static eqnihbrium equations for the plug differential unit and proposes an improved static equity method for the plug effect prediction. At the same time, this approach introduces a simplified model by use of one-dimensional stress wave equation to simulate the interaction between soil plug and pile inner wall. The proposed approach has been applied in practical engineering analyses. Results show that the calculated plug effect and pile driveabihty based on the proposed approach agree well with the observed data.
文摘This paper develops a new simulation technique to characterize single event effects on semiconductor devices. The technique used to calculate the single event effects is developed according to the physical interaction mechanism of a single event effect. An application of the first principles simulation technique is performed to predict the ground-test single event upset effect on field-programmable gate arrays based on 0.25μm advanced complementary metal-oxidesemiconductor technology. The agreement between the single event upset cross section accessed from a broad-beam heavy ion experiment and simulation shows that the simulation technique could be used to characterize the single event effects induced by heavy ions on a semiconductor device.
