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Light-induced above-room-temperature Chern insulators in group-IV Xenes
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作者 Zhe Li Haijun Cao Sheng Meng 《npj Computational Materials》 2025年第1期1736-1743,共8页
Floquet engineering provides a versatile platform for realizing and manipulating diverse exotic topological phases inaccessible in equilibrium.Under the irradiation of circularly or elliptically polarized light,the si... Floquet engineering provides a versatile platform for realizing and manipulating diverse exotic topological phases inaccessible in equilibrium.Under the irradiation of circularly or elliptically polarized light,the sizable spin-orbit couplings in group-IV Xene materials(e.g.,silicene,germanene,stanene)lead to topological phase transitions(TPT)from quantum spin Hall(QSH)to quantum anomalous Hall(QAH)states,governed by spin-degeneracy broken with band closing and reopening process in one of the spin components.Fascinatingly,a large gapped(≥35 meV)QAH effect with a Chern number C=±2 can be introduced under a wide range of laser parameters,lifting limitations of conventional atomic building blocks to achieve long-range magnetism and enabling Chern-insulating behaviors above room temperature.A complex phase diagram for such TPTs is predicted.This work addresses transitions between two-dimensional QSH and QAH states via Floquet engineering,which will stimulate experimental realization of above-room-temperature QAH in group-IV Xenes. 展开更多
关键词 floquet engineering topological phase transitions tpt spin components quantum anomalous circularly elliptically polarized lightthe topological phases light induced Group IV xenes
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