Metal-insulator transition(MIT)in perovskite iridium oxides Sr_(n+1)IrnO_(3n+1)represents one of the most attractive phenomena exemplifying the cooperation of Coulomb interaction and spin-orbit coupling(SOC).MIT takes...Metal-insulator transition(MIT)in perovskite iridium oxides Sr_(n+1)IrnO_(3n+1)represents one of the most attractive phenomena exemplifying the cooperation of Coulomb interaction and spin-orbit coupling(SOC).MIT takes place when Sr_(n+1)IrnO_(3n+1)(n=1,2)is doped with carriers.While electron-doped Sr_(n+1)IrnO_(3n+1)(n=1,2)systems have been extensively investigated,hole-doped samples are still limited.Here,we report the first growth of Fe-doped(hole-doped)Sr_(3)Ir_(2)O_(7)single crystals[Sr_3(Ir_(1-x)Fe_x)_(2)O_(7)]with the doping level 0.1≤x≤0.28.An MIT behavior is observed at the doping level of x~0.16 from resistivity measurements.Electronic structures of Fe-doped Sr_(3)Ir_(2)O_(7)have been revealed by angle-resolved photoemission spectroscopy(ARPES)measurements.The evident energy shift of the band structure indicates higher hole-doping level as compared with Rh-doped Sr_(3)Ir_(2)O_(7).Our results demonstrate that Fe doping serves as an effective approach for heavily hole doping in Sr_(3)Ir_(2)O_(7),thereby offering a powerful strategy to modulate MIT in this material system.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.12074358)the National Key Research and Development Program of China(Grant No.2024YFA1408103)+2 种基金the International Partnership Program of the Chinese Academy of Sciences(Grant No.123GJHZ2022035MI)the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302802)the Fundamental Research Funds for the Central Universities(Grant No.WK3510000015)。
文摘Metal-insulator transition(MIT)in perovskite iridium oxides Sr_(n+1)IrnO_(3n+1)represents one of the most attractive phenomena exemplifying the cooperation of Coulomb interaction and spin-orbit coupling(SOC).MIT takes place when Sr_(n+1)IrnO_(3n+1)(n=1,2)is doped with carriers.While electron-doped Sr_(n+1)IrnO_(3n+1)(n=1,2)systems have been extensively investigated,hole-doped samples are still limited.Here,we report the first growth of Fe-doped(hole-doped)Sr_(3)Ir_(2)O_(7)single crystals[Sr_3(Ir_(1-x)Fe_x)_(2)O_(7)]with the doping level 0.1≤x≤0.28.An MIT behavior is observed at the doping level of x~0.16 from resistivity measurements.Electronic structures of Fe-doped Sr_(3)Ir_(2)O_(7)have been revealed by angle-resolved photoemission spectroscopy(ARPES)measurements.The evident energy shift of the band structure indicates higher hole-doping level as compared with Rh-doped Sr_(3)Ir_(2)O_(7).Our results demonstrate that Fe doping serves as an effective approach for heavily hole doping in Sr_(3)Ir_(2)O_(7),thereby offering a powerful strategy to modulate MIT in this material system.
