期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Effect of initial precursor concentration on TiO_2 thin film nanostructures prepared by PCVD system 被引量:1
1
作者 Hoang Hai Nguyen Dong-Joo Kim +1 位作者 Dong-Wha Park Kyo-Seon Kim 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2013年第3期375-381,共7页
TiO2 thin film was prepared on Si substrate by plasma chemical vapor deposition (PCVD) system and the morphologies of ZiO2 thin film were controlled by adjusting the initial precursor concentration. As the initial t... TiO2 thin film was prepared on Si substrate by plasma chemical vapor deposition (PCVD) system and the morphologies of ZiO2 thin film were controlled by adjusting the initial precursor concentration. As the initial titanium tetra-isopropoxide (TTIP) concentration increases in PCVD reactor, the shapes of TiO2 particles generated in PCVD reactor change from the spherical small-sized particles around 20 nm and spherical large-sized particles around 60 nm to aggregate particles around 100 nm. The TiO2 particles with different shapes deposit on the substrate and become the main building blocks of resulting TiO2 thin film. We observed the TiO2 thin film with smooth morphology at low initial TTIP concentration, granular morphology at medium initial TTIP concentration, and columnar morphology at high initial TTIP concentration. It is proposed that we can prepare the TiO2 thin film with controlled morphologies in one-step process just by adjusting the initial precursor concentration in PCVD . 展开更多
关键词 plasma chemical vapor deposition thin film growth morphology of tio2 thin film shape of tio2 particles
在线阅读 下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部