We study the extended gate ion sensitive structure,and deposit the titanium oxide (TiO_2) thin film on p-type (100) silicon substrate.The device of the hydrogen ion sensing structure is TiO_2/Si-substrate,and a commer...We study the extended gate ion sensitive structure,and deposit the titanium oxide (TiO_2) thin film on p-type (100) silicon substrate.The device of the hydrogen ion sensing structure is TiO_2/Si-substrate,and a commercial device of the metal oxide semiconductor field effect transistor (MOSFET) is connected to the separative sensing device.The sensitivity and linearity are measured under different work pressures.When the mixed ratio of Ar/O_2 is 80 ml·min^(-1)/20 ml·min^(-1),the work pressure is 4 Pa,the sputtering power is 150 W,and the sputtering time is two hours,the better sensing properties of the sensitivity and linearity are 36.49 mV/pH and 0.99654,respectively.However,some instruments are analyzed the surface of TiO_2 membrane,such as X-ray diffraction (XRD) and Auger Electron Spectrometer (AES).The characteristics of TiO_2 thin film can be demonstrated.展开更多
文摘We study the extended gate ion sensitive structure,and deposit the titanium oxide (TiO_2) thin film on p-type (100) silicon substrate.The device of the hydrogen ion sensing structure is TiO_2/Si-substrate,and a commercial device of the metal oxide semiconductor field effect transistor (MOSFET) is connected to the separative sensing device.The sensitivity and linearity are measured under different work pressures.When the mixed ratio of Ar/O_2 is 80 ml·min^(-1)/20 ml·min^(-1),the work pressure is 4 Pa,the sputtering power is 150 W,and the sputtering time is two hours,the better sensing properties of the sensitivity and linearity are 36.49 mV/pH and 0.99654,respectively.However,some instruments are analyzed the surface of TiO_2 membrane,such as X-ray diffraction (XRD) and Auger Electron Spectrometer (AES).The characteristics of TiO_2 thin film can be demonstrated.
