To address the increasing demand for massive data storage and processing,brain-inspired neuromorphic comput-ing systems based on artificial synaptic devices have been actively developed in recent years.Among the vario...To address the increasing demand for massive data storage and processing,brain-inspired neuromorphic comput-ing systems based on artificial synaptic devices have been actively developed in recent years.Among the various materials inves-tigated for the fabrication of synaptic devices,silicon carbide(SiC)has emerged as a preferred choices due to its high electron mobility,superior thermal conductivity,and excellent thermal stability,which exhibits promising potential for neuromorphic applications in harsh environments.In this review,the recent progress in SiC-based synaptic devices is summarized.Firstly,an in-depth discussion is conducted regarding the categories,working mechanisms,and structural designs of these devices.Subse-quently,several application scenarios for SiC-based synaptic devices are presented.Finally,a few perspectives and directions for their future development are outlined.展开更多
In this study,we present the fabrication of vertical SnO/β-Ga_(2)O_(3) heterojunction diode(HJD)via radio frequency(RF)reactive magnetron sputtering.The valence and conduction band offsets betweenβ-Ga_(2)O_(3) and S...In this study,we present the fabrication of vertical SnO/β-Ga_(2)O_(3) heterojunction diode(HJD)via radio frequency(RF)reactive magnetron sputtering.The valence and conduction band offsets betweenβ-Ga_(2)O_(3) and SnO are determined to be 2.65and 0.75 eV,respectively,through X-ray photoelectron spectroscopy,showing a type-Ⅱband alignment.Compared to its Schottky barrier diode(SBD)counterpart,the HJD presents a comparable specific ON-resistances(R_(on,sp))of 2.8 mΩ·cm^(2) and lower reverse leakage current(I_R),leading to an enhanced reverse blocking characteristics with breakdown voltage(BV)of 1675 V and power figure of merit(PFOM)of 1.0 GW/cm~2.This demonstrates the high quality of the SnO/β-Ga_(2)O_(3) heterojunction interface.Silvaco TCAD simulation further reveals that electric field crowding at the edge of anode for the SBD was greatly depressed by the introduction of SnO film,revealing the potential application of SnO/β-Ga_(2)O_(3) heterojunction in the futureβ-Ga_(2)O_(3)-based power devices.data mining,AI training,and similar technologies,are reserved.展开更多
A two-dimensional （2D） full band self-consistent ensemble Monte Carlo （MC） method for solving the quantum Boltzmann equation, including collision broadening and quantum potential corrections, is developed to exten...A two-dimensional （2D） full band self-consistent ensemble Monte Carlo （MC） method for solving the quantum Boltzmann equation, including collision broadening and quantum potential corrections, is developed to extend the MC method to the study of nano-scale semiconductor devices with obvious quantum mechanical （QM） effects. The quantum effects both in real space and momentum space in nano-scale semiconductor devices can be simulated. The effective mobility in the inversion layer of n and p channel MOSFET is simulated and compared with experimental data to verify this method. With this method 50nm ultra thin body silicon on insulator MOSFET are simulated. Results indicate that this method can be used to simulate the 2D QM effects in semiconductor devices including tunnelling effect.展开更多
Characteristic finite difference fractional step schemes are put forward. The electric potential equation is described by a seven-point finite difference scheme, and the electron and hole concentration equations are t...Characteristic finite difference fractional step schemes are put forward. The electric potential equation is described by a seven-point finite difference scheme, and the electron and hole concentration equations are treated by a kind of characteristic finite difference fractional step methods. The temperature equation is described by a fractional step method. Thick and thin grids are made use of to form a complete set. Piecewise threefold quadratic interpolation, symmetrical extension, calculus of variations, commutativity of operator product, decomposition of high order difference operators and prior estimates are also made use of. Optimal order estimates in l2 norm are derived to determine the error of the approximate solution. The well-known problem is thorongley and completely solred.展开更多
A novel sparse matrix technique for the numerical analysis of semiconductor devicesand its algorithms are presented.Storage scheme and calculation procedure of the sparse matrixare described in detail.The sparse matri...A novel sparse matrix technique for the numerical analysis of semiconductor devicesand its algorithms are presented.Storage scheme and calculation procedure of the sparse matrixare described in detail.The sparse matrix technique in the device simulation can decrease storagegreatly with less CPU time and its implementation is very easy.Some algorithms and calculationexamples to show the time and space characteristics of the sparse matrix are given.展开更多
The development of rare earths (RE) applications to semiconductor materials and devices is reviewed. The recent advances in RE doped silicon light emitting diodes (LED) and display materials are described. The various...The development of rare earths (RE) applications to semiconductor materials and devices is reviewed. The recent advances in RE doped silicon light emitting diodes (LED) and display materials are described. The various technologies of incorporating RE into semiconductor materials and devices are presented. The RE high dielectric materials, RE silicides and the phase transition of RE materials are also discussed. Finally, the paper describes the prospects of the RE application to semiconductor industry.展开更多
Superjunction(SJ)is one of the most innovative concepts in the field of power semiconductor devices and is often referred to as a"milestone"in power MOS.Its balanced charge field modulation mechanism breaks ...Superjunction(SJ)is one of the most innovative concepts in the field of power semiconductor devices and is often referred to as a"milestone"in power MOS.Its balanced charge field modulation mechanism breaks through the strong dependency between the doping concentration in the drift region and the breakdown voltage V_(B)in conventional devices.This results in a reduction of the trade-off relationship between specific on-resistance R_(on,sp)and V_(B)from the conventional R_(on,sp)∝V_(B)^(2.5)to R_(on,sp)∝W·V_(B)^(1.32),and even to R_(on,sp)∝W·V_(B)^(1.03).As the exponential term coefficient decreases,R_(on,sp)decreases with the cell width W,exhibiting a development pattern reminiscent of"Moore's Law".This paper provides an overview of the latest research developments in SJ power semiconductor devices.Firstly,it introduces the minimum specific on-resistance R_(on,min)theory of SJ devices,along with its combination with special effects like 3-D depletion and tunneling,discussing the development of R_(on,min)theory in the wide bandgap SJ field.Subsequently,it discusses the latest advancements in silicon-based and wide bandgap SJ power devices.Finally,it introduces the homogenization field(HOF)and high-K voltage-sustaining layers derived from the concept of SJ charge balance.SJ has made significant progress in device performance,reliability,and integration,and in the future,it will continue to evolve through deeper integration with different materials,processes,and packaging technologies,enhancing the overall performance of semiconductor power devices.展开更多
In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated...In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.展开更多
Research on high voltage(HV)silicon carbide(SiC)power semiconductor devices has attracted much attention in recent years.This paper overviews the development and status of HV SiC devices.Meanwhile,benefits of HV SiC d...Research on high voltage(HV)silicon carbide(SiC)power semiconductor devices has attracted much attention in recent years.This paper overviews the development and status of HV SiC devices.Meanwhile,benefits of HV SiC devices are presented.The technologies and challenges for HV SiC device application in converter design are discussed.The state-of-the-art applications of HV SiC devices are also reviewed.展开更多
The effect of nitric oxide（NO） annealing on charge traps in the oxide insulator and transition layer in n-type4H–Si C metal–oxide–semiconductor（MOS） devices has been investigated using the time-dependent bias s...The effect of nitric oxide（NO） annealing on charge traps in the oxide insulator and transition layer in n-type4H–Si C metal–oxide–semiconductor（MOS） devices has been investigated using the time-dependent bias stress（TDBS）,capacitance–voltage（C–V）,and secondary ion mass spectroscopy（SIMS）.It is revealed that two main categories of charge traps,near interface oxide traps（Nniot） and oxide traps（Not）,have different responses to the TDBS and C–V characteristics in NO-annealed and Ar-annealed samples.The Nniotare mainly responsible for the hysteresis occurring in the bidirectional C–V characteristics,which are very close to the semiconductor interface and can readily exchange charges with the inner semiconductor.However,Not is mainly responsible for the TDBS induced C–V shifts.Electrons tunneling into the Not are hardly released quickly when suffering TDBS,resulting in the problem of the threshold voltage stability.Compared with the Ar-annealed sample,Nniotcan be significantly suppressed by the NO annealing,but there is little improvement of Not.SIMS results demonstrate that the Nniotare distributed within the transition layer,which correlated with the existence of the excess silicon.During the NO annealing process,the excess Si atoms incorporate into nitrogen in the transition layer,allowing better relaxation of the interface strain and effectively reducing the width of the transition layer and the density of Nniot.展开更多
A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit ...A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.展开更多
The transient behavior of a semiconductor device consists of a Poisson equation for the electric potential and of two nonlinear parabolic equations for the electron density and hole density. The electric potential equ...The transient behavior of a semiconductor device consists of a Poisson equation for the electric potential and of two nonlinear parabolic equations for the electron density and hole density. The electric potential equation is discretized by a mixed finite element method. The electron and hole density equations are treated by implicit-explicit multistep finite element methods. The schemes are very efficient. The optimal order error estimates both in time and space are derived.展开更多
Halide perovskite,a novel semiconductor material,was initially used in solar cells since 2009,and tremendous progresses have been witnessed in the last decade.The power conversion efficiency of the single perovskite s...Halide perovskite,a novel semiconductor material,was initially used in solar cells since 2009,and tremendous progresses have been witnessed in the last decade.The power conversion efficiency of the single perovskite solar cells has been incredibly increased up to 25.2%,and close to 30%efficiency was realized in perovskite/silicon tandem solar cells.Recently,the application of perovskite has been extended to the light-emitting diodes and photo-detectors.展开更多
The mathematical model of a semiconductor device is governed by a system of quasi-linear partial differential equations.The electric potential equation is approximated by a mixed finite element method,and the concentr...The mathematical model of a semiconductor device is governed by a system of quasi-linear partial differential equations.The electric potential equation is approximated by a mixed finite element method,and the concentration equations are approximated by a standard Galerkin method.We estimate the error of the numerical solutions in the sense of the Lqnorm.To linearize the full discrete scheme of the problem,we present an efficient two-grid method based on the idea of Newton iteration.The main procedures are to solve the small scaled nonlinear equations on the coarse grid and then deal with the linear equations on the fine grid.Error estimation for the two-grid solutions is analyzed in detail.It is shown that this method still achieves asymptotically optimal approximations as long as a mesh size satisfies H=O(h^1/2).Numerical experiments are given to illustrate the efficiency of the two-grid method.展开更多
The electroluminescunce (EL) transient characteristics of erbium-doped zinc sulfide thin film (TF) devices excited by short rectangular pulses are studied, the luminescence delay after de-exciting and the relaxation l...The electroluminescunce (EL) transient characteristics of erbium-doped zinc sulfide thin film (TF) devices excited by short rectangular pulses are studied, the luminescence delay after de-exciting and the relaxation luminance peaks during decay are observed. A model description for energy transfer has been proposed. The experimental results can be theoretically explained with the computer curve fittings.展开更多
The numerical simulation of a three-dimensional semiconductor device is a fundamental problem in information science. The mathematical model is defined by an initialboundary nonlinear system of four partial differenti...The numerical simulation of a three-dimensional semiconductor device is a fundamental problem in information science. The mathematical model is defined by an initialboundary nonlinear system of four partial differential equations: an elliptic equation for electric potential, two convection-diffusion equations for electron concentration and hole concentration, and a heat conduction equation for temperature. The first equation is solved by the conservative block-centered method. The concentrations and temperature are computed by the block-centered upwind difference method on a changing mesh, where the block-centered method and upwind approximation are used to discretize the diffusion and convection, respectively. The computations on a changing mesh show very well the local special properties nearby the P-N junction. The upwind scheme is applied to approximate the convection, and numerical dispersion and nonphysical oscillation are avoided. The block-centered difference computes concentrations, temperature, and their adjoint vector functions simultaneously.The local conservation of mass, an important rule in the numerical simulation of a semiconductor device, is preserved during the computations. An optimal order convergence is obtained. Numerical examples are provided to show efficiency and application.展开更多
Doping plays a pivotal role in enhancing the performance of organic semiconductors(OSCs)for advanced optoelectronic and thermoelectric applications.In this study,we systematically investigated the doping performance a...Doping plays a pivotal role in enhancing the performance of organic semiconductors(OSCs)for advanced optoelectronic and thermoelectric applications.In this study,we systematically investigated the doping performance and applicability of the ionic dopant 4-isopropyl-4′-methyldiphenyliodonium tetrakis(penta-fluorophenyl-borate)(DPI-TPFB)as a p-dopant for OSCs.Using the p-type OSC PBBT-2T as a model system,we demonstrated that DPI-TPFB shows significant doping effect,as confirmed by ESR spectra,ultraviolet-visible-near-infrared(UV-vis-NIR)absorption,and work function analysis,and enhances the electronic conductivity of PBBT-2T films by over four orders of magnitude.Furthermore,DPI-TPFB exhibited broad doping applicability,effectively doping various p-type OSCs and even imparting p-type characteristics to the n-type OSC N2200,transforming its intrinsic n-type behavior into p-type.The application of DPI-TPFB-doped PBBT-2T films in organic thermoelectric devices(OTEs)was also explored,achieving a power factor of approximately 10μW·m^(-1)·K^(-2).These findings highlight the potential of DPI-TPFB as a versatile and efficient dopant for integration into organic optoelectronic and thermoelectric devices.展开更多
The momentary state of a semiconductor device is described by a system of three nonlinear partial differential equations. A finite difference scheme for simulating transient behaviors of a semiconductor device on grid...The momentary state of a semiconductor device is described by a system of three nonlinear partial differential equations. A finite difference scheme for simulating transient behaviors of a semiconductor device on grids with local refinement in time and space is constructed and studied. Error analysis is presented and is illustrated by numerical examples.展开更多
Copper Zinc Antimony Sulfide(CZAS)is derived from Copper Antimony Sulfide(CAS),a famatinite class of compound.In the current paper,the first step for using Copper,Zinc,Antimony and Sulfide as materials in manufacturin...Copper Zinc Antimony Sulfide(CZAS)is derived from Copper Antimony Sulfide(CAS),a famatinite class of compound.In the current paper,the first step for using Copper,Zinc,Antimony and Sulfide as materials in manufacturing synchrotronic biosensor-namely increasing the sensitivity of biosensor through creating Copper Zinc Antimony Sulfide,CZAS(Cu1.18Zn0.40Sb1.90S7.2)semiconductor and using it instead of Copper Tin Sulfide,CTS(Cu2SnS3)for tracking,monitoring,imaging,measuring,diagnosing and detecting cancer cells,is evaluated.Further,optimization of tris(2,2'-bipyridyl)ruthenium(II)(Ru(bpy)32+)concentrations and Copper Zinc Antimony Sulfide,CZAS(Cu1.18Zn0.40Sb1.90S7.2)semiconductor as two main and effective materials in the intensity of synchrotron for tracking,monitoring,imaging,measuring,diagnosing and detecting cancer cells are considered so that the highest sensitivity obtains.In this regard,various concentrations of two materials were prepared and photon emission was investigated in the absence of cancer cells.On the other hand,ccancer diagnosis requires the analysis of images and attributes as well as collecting many clinical and mammography variables.In diagnosis of cancer,it is important to determine whether a tumor is benign or malignant.The information about cancer risk prediction along with the type of tumor are crucial for patients and effective medical decision making.An ideal diagnostic system could effectively distinguish between benign and malignant cells;however,such a system has not been created yet.In this study,a model is developed to improve the prediction probability of cancer.It is necessary to have such a prediction model as the survival probability of cancer is high when patients are diagnosed at early stages.展开更多
The temperature dependence of some performance of 6H SiC unipolar power devices is analyzed theoretically.By employing the temperature dependent ionization coefficient and mobility of a silicon carbide,the analytica...The temperature dependence of some performance of 6H SiC unipolar power devices is analyzed theoretically.By employing the temperature dependent ionization coefficient and mobility of a silicon carbide,the analytical expressions of the temperature dependent performance,such as breakdown characteristics and on resistance of 6H SiC unipolar power devices are derived in a closed form.The analytical results are compared with the experimental results,with good accordance found in the breakdown characteristics.展开更多
基金supported by the Natural Science Foundation of Zhejiang Province(Grant No.LQ24F040007)the National Natural Science Foundation of China(Grant No.U22A2075)the Opening Project of State Key Laboratory of Polymer Materials Engineering(Sichuan University)(Grant No.sklpme2024-1-21).
文摘To address the increasing demand for massive data storage and processing,brain-inspired neuromorphic comput-ing systems based on artificial synaptic devices have been actively developed in recent years.Among the various materials inves-tigated for the fabrication of synaptic devices,silicon carbide(SiC)has emerged as a preferred choices due to its high electron mobility,superior thermal conductivity,and excellent thermal stability,which exhibits promising potential for neuromorphic applications in harsh environments.In this review,the recent progress in SiC-based synaptic devices is summarized.Firstly,an in-depth discussion is conducted regarding the categories,working mechanisms,and structural designs of these devices.Subse-quently,several application scenarios for SiC-based synaptic devices are presented.Finally,a few perspectives and directions for their future development are outlined.
基金supported by the National Natural Science Foundation of China(NSFC,No.62074048)the Key Research and Development Plan of Anhui Province(No.2022f04020007)the Natural Science Foundation of Anhui Province(No.2208085MF177)。
文摘In this study,we present the fabrication of vertical SnO/β-Ga_(2)O_(3) heterojunction diode(HJD)via radio frequency(RF)reactive magnetron sputtering.The valence and conduction band offsets betweenβ-Ga_(2)O_(3) and SnO are determined to be 2.65and 0.75 eV,respectively,through X-ray photoelectron spectroscopy,showing a type-Ⅱband alignment.Compared to its Schottky barrier diode(SBD)counterpart,the HJD presents a comparable specific ON-resistances(R_(on,sp))of 2.8 mΩ·cm^(2) and lower reverse leakage current(I_R),leading to an enhanced reverse blocking characteristics with breakdown voltage(BV)of 1675 V and power figure of merit(PFOM)of 1.0 GW/cm~2.This demonstrates the high quality of the SnO/β-Ga_(2)O_(3) heterojunction interface.Silvaco TCAD simulation further reveals that electric field crowding at the edge of anode for the SBD was greatly depressed by the introduction of SnO film,revealing the potential application of SnO/β-Ga_(2)O_(3) heterojunction in the futureβ-Ga_(2)O_(3)-based power devices.data mining,AI training,and similar technologies,are reserved.
基金Project supported by the Special Foundation for State Major Basic Research Program of China （Grant No G2000035602） and the National Natural Science Foundation of China （Grant No 90307006）.
文摘A two-dimensional （2D） full band self-consistent ensemble Monte Carlo （MC） method for solving the quantum Boltzmann equation, including collision broadening and quantum potential corrections, is developed to extend the MC method to the study of nano-scale semiconductor devices with obvious quantum mechanical （QM） effects. The quantum effects both in real space and momentum space in nano-scale semiconductor devices can be simulated. The effective mobility in the inversion layer of n and p channel MOSFET is simulated and compared with experimental data to verify this method. With this method 50nm ultra thin body silicon on insulator MOSFET are simulated. Results indicate that this method can be used to simulate the 2D QM effects in semiconductor devices including tunnelling effect.
基金This work is supported by the Major State Basic Research Program of China (19990328), the National Tackling Key Problem Program, the National Science Foundation of China (10271066 and 0372052), and the Doctorate Foundation of the Ministry of Education of China (20030422047).
文摘Characteristic finite difference fractional step schemes are put forward. The electric potential equation is described by a seven-point finite difference scheme, and the electron and hole concentration equations are treated by a kind of characteristic finite difference fractional step methods. The temperature equation is described by a fractional step method. Thick and thin grids are made use of to form a complete set. Piecewise threefold quadratic interpolation, symmetrical extension, calculus of variations, commutativity of operator product, decomposition of high order difference operators and prior estimates are also made use of. Optimal order estimates in l2 norm are derived to determine the error of the approximate solution. The well-known problem is thorongley and completely solred.
文摘A novel sparse matrix technique for the numerical analysis of semiconductor devicesand its algorithms are presented.Storage scheme and calculation procedure of the sparse matrixare described in detail.The sparse matrix technique in the device simulation can decrease storagegreatly with less CPU time and its implementation is very easy.Some algorithms and calculationexamples to show the time and space characteristics of the sparse matrix are given.
文摘The development of rare earths (RE) applications to semiconductor materials and devices is reviewed. The recent advances in RE doped silicon light emitting diodes (LED) and display materials are described. The various technologies of incorporating RE into semiconductor materials and devices are presented. The RE high dielectric materials, RE silicides and the phase transition of RE materials are also discussed. Finally, the paper describes the prospects of the RE application to semiconductor industry.
文摘Superjunction(SJ)is one of the most innovative concepts in the field of power semiconductor devices and is often referred to as a"milestone"in power MOS.Its balanced charge field modulation mechanism breaks through the strong dependency between the doping concentration in the drift region and the breakdown voltage V_(B)in conventional devices.This results in a reduction of the trade-off relationship between specific on-resistance R_(on,sp)and V_(B)from the conventional R_(on,sp)∝V_(B)^(2.5)to R_(on,sp)∝W·V_(B)^(1.32),and even to R_(on,sp)∝W·V_(B)^(1.03).As the exponential term coefficient decreases,R_(on,sp)decreases with the cell width W,exhibiting a development pattern reminiscent of"Moore's Law".This paper provides an overview of the latest research developments in SJ power semiconductor devices.Firstly,it introduces the minimum specific on-resistance R_(on,min)theory of SJ devices,along with its combination with special effects like 3-D depletion and tunneling,discussing the development of R_(on,min)theory in the wide bandgap SJ field.Subsequently,it discusses the latest advancements in silicon-based and wide bandgap SJ power devices.Finally,it introduces the homogenization field(HOF)and high-K voltage-sustaining layers derived from the concept of SJ charge balance.SJ has made significant progress in device performance,reliability,and integration,and in the future,it will continue to evolve through deeper integration with different materials,processes,and packaging technologies,enhancing the overall performance of semiconductor power devices.
文摘In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.
基金This work made use of the Engineering Research Center Shared Facilities supported by the Engineering Research Center Program of the National Science Foundation and DOE under ARPA-E and Power America Program and the CURENT Industry Partnership Program.
文摘Research on high voltage(HV)silicon carbide(SiC)power semiconductor devices has attracted much attention in recent years.This paper overviews the development and status of HV SiC devices.Meanwhile,benefits of HV SiC devices are presented.The technologies and challenges for HV SiC device application in converter design are discussed.The state-of-the-art applications of HV SiC devices are also reviewed.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61404098 and 61274079)the Doctoral Fund of Ministry of Education of China(Grant No.20130203120017)+2 种基金the National Key Basic Research Program of China(Grant No.2015CB759600)the National Grid Science&Technology Project,China(Grant No.SGRI-WD-71-14-018)the Key Specific Project in the National Science&Technology Program,China(Grant Nos.2013ZX02305002-002 and 2015CB759600)
文摘The effect of nitric oxide（NO） annealing on charge traps in the oxide insulator and transition layer in n-type4H–Si C metal–oxide–semiconductor（MOS） devices has been investigated using the time-dependent bias stress（TDBS）,capacitance–voltage（C–V）,and secondary ion mass spectroscopy（SIMS）.It is revealed that two main categories of charge traps,near interface oxide traps（Nniot） and oxide traps（Not）,have different responses to the TDBS and C–V characteristics in NO-annealed and Ar-annealed samples.The Nniotare mainly responsible for the hysteresis occurring in the bidirectional C–V characteristics,which are very close to the semiconductor interface and can readily exchange charges with the inner semiconductor.However,Not is mainly responsible for the TDBS induced C–V shifts.Electrons tunneling into the Not are hardly released quickly when suffering TDBS,resulting in the problem of the threshold voltage stability.Compared with the Ar-annealed sample,Nniotcan be significantly suppressed by the NO annealing,but there is little improvement of Not.SIMS results demonstrate that the Nniotare distributed within the transition layer,which correlated with the existence of the excess silicon.During the NO annealing process,the excess Si atoms incorporate into nitrogen in the transition layer,allowing better relaxation of the interface strain and effectively reducing the width of the transition layer and the density of Nniot.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60536030,61036002,60776024,60877035 and 61036009)National High Technology Research and Development Program of China(Grant Nos.2007AA04Z329 and 2007AA04Z254)
文摘A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.
文摘The transient behavior of a semiconductor device consists of a Poisson equation for the electric potential and of two nonlinear parabolic equations for the electron density and hole density. The electric potential equation is discretized by a mixed finite element method. The electron and hole density equations are treated by implicit-explicit multistep finite element methods. The schemes are very efficient. The optimal order error estimates both in time and space are derived.
文摘Halide perovskite,a novel semiconductor material,was initially used in solar cells since 2009,and tremendous progresses have been witnessed in the last decade.The power conversion efficiency of the single perovskite solar cells has been incredibly increased up to 25.2%,and close to 30%efficiency was realized in perovskite/silicon tandem solar cells.Recently,the application of perovskite has been extended to the light-emitting diodes and photo-detectors.
基金Project supported by the State Key Program of National Natural Science Foundation of China(No.11931003)the National Natural Science Foundation of China(Nos.41974133,11671157,11971410)。
文摘The mathematical model of a semiconductor device is governed by a system of quasi-linear partial differential equations.The electric potential equation is approximated by a mixed finite element method,and the concentration equations are approximated by a standard Galerkin method.We estimate the error of the numerical solutions in the sense of the Lqnorm.To linearize the full discrete scheme of the problem,we present an efficient two-grid method based on the idea of Newton iteration.The main procedures are to solve the small scaled nonlinear equations on the coarse grid and then deal with the linear equations on the fine grid.Error estimation for the two-grid solutions is analyzed in detail.It is shown that this method still achieves asymptotically optimal approximations as long as a mesh size satisfies H=O(h^1/2).Numerical experiments are given to illustrate the efficiency of the two-grid method.
文摘The electroluminescunce (EL) transient characteristics of erbium-doped zinc sulfide thin film (TF) devices excited by short rectangular pulses are studied, the luminescence delay after de-exciting and the relaxation luminance peaks during decay are observed. A model description for energy transfer has been proposed. The experimental results can be theoretically explained with the computer curve fittings.
基金supported the Natural Science Foundation of Shandong Province(ZR2016AM08)Natural Science Foundation of Hunan Province(2018JJ2028)National Natural Science Foundation of China(11871312).
文摘The numerical simulation of a three-dimensional semiconductor device is a fundamental problem in information science. The mathematical model is defined by an initialboundary nonlinear system of four partial differential equations: an elliptic equation for electric potential, two convection-diffusion equations for electron concentration and hole concentration, and a heat conduction equation for temperature. The first equation is solved by the conservative block-centered method. The concentrations and temperature are computed by the block-centered upwind difference method on a changing mesh, where the block-centered method and upwind approximation are used to discretize the diffusion and convection, respectively. The computations on a changing mesh show very well the local special properties nearby the P-N junction. The upwind scheme is applied to approximate the convection, and numerical dispersion and nonphysical oscillation are avoided. The block-centered difference computes concentrations, temperature, and their adjoint vector functions simultaneously.The local conservation of mass, an important rule in the numerical simulation of a semiconductor device, is preserved during the computations. An optimal order convergence is obtained. Numerical examples are provided to show efficiency and application.
基金supported by the Fundamental Research Program of Shanxi Province(Nos.202303021212159 and 202303021222190)the National Natural Science Foundation of China(No.62222403)+2 种基金the Higher Education Institutions Science and Technology Innovation Program of Shanxi Province(No.2023L160)the Scientific Research Fund of Hunan Provincial Education Department(No.23B0842)the Natural Science Foundation of Shanxi Normal University(Nos.JCYJ2024017 and JCYJ2023015)。
文摘Doping plays a pivotal role in enhancing the performance of organic semiconductors(OSCs)for advanced optoelectronic and thermoelectric applications.In this study,we systematically investigated the doping performance and applicability of the ionic dopant 4-isopropyl-4′-methyldiphenyliodonium tetrakis(penta-fluorophenyl-borate)(DPI-TPFB)as a p-dopant for OSCs.Using the p-type OSC PBBT-2T as a model system,we demonstrated that DPI-TPFB shows significant doping effect,as confirmed by ESR spectra,ultraviolet-visible-near-infrared(UV-vis-NIR)absorption,and work function analysis,and enhances the electronic conductivity of PBBT-2T films by over four orders of magnitude.Furthermore,DPI-TPFB exhibited broad doping applicability,effectively doping various p-type OSCs and even imparting p-type characteristics to the n-type OSC N2200,transforming its intrinsic n-type behavior into p-type.The application of DPI-TPFB-doped PBBT-2T films in organic thermoelectric devices(OTEs)was also explored,achieving a power factor of approximately 10μW·m^(-1)·K^(-2).These findings highlight the potential of DPI-TPFB as a versatile and efficient dopant for integration into organic optoelectronic and thermoelectric devices.
基金Supported by the Major State Basic Research of China (Grant No. G1999032803)the National Natural Science Foundation of China (Grant No. 10372052,10271066)the Doctorate Foundation of the Ministry of Education of China (Grant No. 20030422047).
文摘The momentary state of a semiconductor device is described by a system of three nonlinear partial differential equations. A finite difference scheme for simulating transient behaviors of a semiconductor device on grids with local refinement in time and space is constructed and studied. Error analysis is presented and is illustrated by numerical examples.
文摘Copper Zinc Antimony Sulfide(CZAS)is derived from Copper Antimony Sulfide(CAS),a famatinite class of compound.In the current paper,the first step for using Copper,Zinc,Antimony and Sulfide as materials in manufacturing synchrotronic biosensor-namely increasing the sensitivity of biosensor through creating Copper Zinc Antimony Sulfide,CZAS(Cu1.18Zn0.40Sb1.90S7.2)semiconductor and using it instead of Copper Tin Sulfide,CTS(Cu2SnS3)for tracking,monitoring,imaging,measuring,diagnosing and detecting cancer cells,is evaluated.Further,optimization of tris(2,2'-bipyridyl)ruthenium(II)(Ru(bpy)32+)concentrations and Copper Zinc Antimony Sulfide,CZAS(Cu1.18Zn0.40Sb1.90S7.2)semiconductor as two main and effective materials in the intensity of synchrotron for tracking,monitoring,imaging,measuring,diagnosing and detecting cancer cells are considered so that the highest sensitivity obtains.In this regard,various concentrations of two materials were prepared and photon emission was investigated in the absence of cancer cells.On the other hand,ccancer diagnosis requires the analysis of images and attributes as well as collecting many clinical and mammography variables.In diagnosis of cancer,it is important to determine whether a tumor is benign or malignant.The information about cancer risk prediction along with the type of tumor are crucial for patients and effective medical decision making.An ideal diagnostic system could effectively distinguish between benign and malignant cells;however,such a system has not been created yet.In this study,a model is developed to improve the prediction probability of cancer.It is necessary to have such a prediction model as the survival probability of cancer is high when patients are diagnosed at early stages.
文摘The temperature dependence of some performance of 6H SiC unipolar power devices is analyzed theoretically.By employing the temperature dependent ionization coefficient and mobility of a silicon carbide,the analytical expressions of the temperature dependent performance,such as breakdown characteristics and on resistance of 6H SiC unipolar power devices are derived in a closed form.The analytical results are compared with the experimental results,with good accordance found in the breakdown characteristics.
