A novel 800nm Bragg mirror type of semiconductor saturable absorption mirror wit h low temperature method and surface state method combined absorber is presented .With which passive Kerr lens mode locking of Ti∶Al 2...A novel 800nm Bragg mirror type of semiconductor saturable absorption mirror wit h low temperature method and surface state method combined absorber is presented .With which passive Kerr lens mode locking of Ti∶Al 2O 3 laser pumped by argo n ion laser is realized,which produces pulses as short as 40fs.The spectrum band width is 56nm,which means that it can support the modelocking of 20fs.The pulse frequency is 97.5MHz;average output power is 300mW at the pump power of 4.45W.展开更多
文摘A novel 800nm Bragg mirror type of semiconductor saturable absorption mirror wit h low temperature method and surface state method combined absorber is presented .With which passive Kerr lens mode locking of Ti∶Al 2O 3 laser pumped by argo n ion laser is realized,which produces pulses as short as 40fs.The spectrum band width is 56nm,which means that it can support the modelocking of 20fs.The pulse frequency is 97.5MHz;average output power is 300mW at the pump power of 4.45W.
