Using lateral phase change random access memory(PCRAM)for demonstration,we report a self-aligned process to fabricate a metal electrode-quantum dot(QD)/nanowire(NW)-metal electrode structure.Due to the good confinemen...Using lateral phase change random access memory(PCRAM)for demonstration,we report a self-aligned process to fabricate a metal electrode-quantum dot(QD)/nanowire(NW)-metal electrode structure.Due to the good confinement and coupling between the Ge_(2)Sb_(2)Te_(5)(GST)QD and the tungsten electrodes,the device shows a threshold current and voltage as small as 2.50μA and 1.08 V,respectively.Our process is highlighted with good controllability and repeatability with 100%yield,making it a promising fabrication process for nanoelectronics.展开更多
N and P-channel groove-gate MOSFETs based on a self-aligned CMOS process have been fabricated and characterized. For the devices with channel length of 140nm, the measured drain induced barrier lowering （DIBL） was 6...N and P-channel groove-gate MOSFETs based on a self-aligned CMOS process have been fabricated and characterized. For the devices with channel length of 140nm, the measured drain induced barrier lowering （DIBL） was 66mV/V for n-MOSFETs and 82mV/V for p-MOSFETs. The substrate current of a groove-gate n-MOSFET was 150 times less than that of a conventional planar n-MOSFET, These results demonstrate that groove-gate MOSFETs have excellent capabilities in suppressing short-channel effects. It is worth emphasizing that our groove-gate MOSFET devices are fabricated by using a simple process flow, with the potential of fabricating devices in the sub-100nm range.展开更多
A self-aligned process to fabricate a ＂metal-quantum dot-metal＂ structure is presented, based on an ＂electron beam lithography, thin film deposition and dry etching process＂. The sacrificial layers used can improv...A self-aligned process to fabricate a ＂metal-quantum dot-metal＂ structure is presented, based on an ＂electron beam lithography, thin film deposition and dry etching process＂. The sacrificial layers used can improve the lift-off process, and novel lithography layouts design can improve the mechanical strength of the fabricated nanostructures. The superiority of the self-aligned process includes low request for overlay accuracy, high compatibility with a variety of materials, and applicable to similar structure devices fabrication. Finally, a phase change memory with fully confined phase-change material node, with the length × width × height of 255 × 45 × 30 nm^3 was demonstrated.展开更多
Agricultural Products Processing and Storage(ISSN 3059-4510,Owner:Hunan Academy of Agricultural Sciences,China.Production and hosting:Springer Nature)is an international,peer-reviewed open access journal with the aim ...Agricultural Products Processing and Storage(ISSN 3059-4510,Owner:Hunan Academy of Agricultural Sciences,China.Production and hosting:Springer Nature)is an international,peer-reviewed open access journal with the aim to offer a platform for the rapid dissemination of signifi cant,novel,and high-impact research in the fi elds of agricultural product processing science,technology,engineering,and nutrition.Additionally,supplemental issues are curated and published to facilitate in-depth discussions on special topics.展开更多
The aging process is an inexorable fact throughout our lives and is considered a major factor in develo ping neurological dysfunctions associated with cognitive,emotional,and motor impairments.Aging-associated neurode...The aging process is an inexorable fact throughout our lives and is considered a major factor in develo ping neurological dysfunctions associated with cognitive,emotional,and motor impairments.Aging-associated neurodegenerative diseases are characterized by the progressive loss of neuronal structure and function.展开更多
The complexity of the seismicity pattern for the subduction zone along the oceanic plate triggered the outer rise events and revealed cyclic tectonic deformation conditions along the plate subduction zones.The outer r...The complexity of the seismicity pattern for the subduction zone along the oceanic plate triggered the outer rise events and revealed cyclic tectonic deformation conditions along the plate subduction zones.The outer rise earthquakes have been observed along the Sunda arc,following the estimated rupture area of the 2005 M_(W)8.6 Nias earthquakes.Here,we used kinematic waveform inversion(KIWI)to obtain the source parameters of the 14 May 2021 M_(W)6.6 event off the west coast of northern Sumatra and to define the fault plane that triggered this outer rise event.The KIWI algorithm allows two types of seismic source to be configured:the moment tensor model to describe the type of shear with six moment tensor components and the Eikonal model for the rupture of pure double-couple sources.This method was chosen for its flexibility to be applied for different sources of seismicity and also for the automated full-moment tensor solution with real-time monitoring.We used full waveform traces from 8 broadband seismic stations within 1000 km epicentral distances sourced from the Incorporated Research Institutions for Seismology(IRIS-IDA)and Geofon GFZ seismic record databases.The initial origin time and hypocenter values are obtained from the IRIS-IDA.The synthetic seismograms used in the inversion process are based on the existing regional green function database model and were accessed from the KIWI Tools Green's Function Database.The obtained scalar seismic moment value is 1.18×10^(19)N·m,equivalent to a moment magnitude M_(W)6.6.The source parameters are 140°,44°,and−99°for the strike,dip,and rake values at a centroid depth of 10.2 km,indicating that this event is a normal fault earthquake that occurred in the outer rise area.The outer rise events with normal faults typically occur at the shallow part of the plate,with nodal-plane dips predominantly in the range of 30°-60°on the weak oceanic lithosphere due to hydrothermal alteration.The stress regime around the plate subduction zone varies both temporally and spatially due to the cyclic influences of megathrust earthquakes.Tensional outer rise earthquakes tend to occur after the megathrust events.The relative timing of these events is not known due to the viscous relaxation of the down going slab and poroelastic response in the trench slope region.The occurrence of the 14 May 2021 earthquake shows the seismicity in the outer rise region in the strongly coupled Sunda arc subduction zone due to elastic bending stress within the duration of the seismic cycle.展开更多
To explore the best preparation process for terminal blend(TB)composite-modified asphalt and to filter its formulation with excellent performance,this study evaluates the performance of TB composite modified asphalt b...To explore the best preparation process for terminal blend(TB)composite-modified asphalt and to filter its formulation with excellent performance,this study evaluates the performance of TB composite modified asphalt by physical property index,microscopic morphology,rheological testing,and infrared spectroscopy on multiple scales.The results show that the best preparation process for TB-modified asphalt is stirring at 260℃ for 4 h at 400 rpm,which significantly reduces the modification time of the asphalt.From a physical property viewpoint,the TB composite-modified asphalt sample with 5% styrene-butadiene-styrene(SBS)+1% aromatics+0.1% sulfur exhibits high-comprehensive,high-and low-temperature properties.More-over,its crosslinked mesh structure comprises black rubber particles uniformly interwoven in the middle,which further enhances the performance of the asphalt and results in an excellent performance formulation.In addition,the sample with 5%SBS content has a higher G*value and smaller δ value than that with 3%SBS content,indicating that its high-temperature resistance is improved.The effect of adding 3%SBS content on the viscoelastic ratio is,to some extent,less than that caused by 20% rubber powder.展开更多
Oxide dispersion strengthened(ODS)alloys are extensively used owing to high thermostability and creep strength contributed from uniformly dispersed fine oxides particles.However,the existence of these strengthening pa...Oxide dispersion strengthened(ODS)alloys are extensively used owing to high thermostability and creep strength contributed from uniformly dispersed fine oxides particles.However,the existence of these strengthening particles also deteriorates the processability and it is of great importance to establish accurate processing maps to guide the thermomechanical processes to enhance the formability.In this study,we performed particle swarm optimization-based back propagation artificial neural network model to predict the high temperature flow behavior of 0.25wt%Al2O3 particle-reinforced Cu alloys,and compared the accuracy with that of derived by Arrhenius-type constitutive model and back propagation artificial neural network model.To train these models,we obtained the raw data by fabricating ODS Cu alloys using the internal oxidation and reduction method,and conducting systematic hot compression tests between 400 and800℃with strain rates of 10^(-2)-10 S^(-1).At last,processing maps for ODS Cu alloys were proposed by combining processing parameters,mechanical behavior,microstructure characterization,and the modeling results achieved a coefficient of determination higher than>99%.展开更多
An emitter self-aligned InP-based single heterojunction bipolar transistor with a cutoff frequency （fT） of 162GHz is reported. The emitter size is 0.8μm × 12μm, the maximum DC gain is 120, the offset voltage ...An emitter self-aligned InP-based single heterojunction bipolar transistor with a cutoff frequency （fT） of 162GHz is reported. The emitter size is 0.8μm × 12μm, the maximum DC gain is 120, the offset voltage is 0.10V,and the typical breakdown voltage at Ic = 0. 1μA is 3.8V. This device is suitable for high-speed low-power applications,such as OEIC receivers and analog-to-digital converters.展开更多
A self-aligned InP/GalnAs single heterojunction bipolar transistor（HBT） is investigated using a novel T-shaped emitter. A U-shaped emitter layout,selective wet etching,laterally etched undercut, and an air-bridge ar...A self-aligned InP/GalnAs single heterojunction bipolar transistor（HBT） is investigated using a novel T-shaped emitter. A U-shaped emitter layout,selective wet etching,laterally etched undercut, and an air-bridge are applied in this process. The device, which has a 2μm×12μm U-shaped emitter area,demonstrates a common-emitter DC current gain of 170,an offset voltage of 0.2V,a knee voltage of 0.5V, and an open-base breakdown voltage of over 2V. The HBT exhibits good microwave performance with a current gain cutoff frequency of 85GHz and a maximum oscillation frequency of 72GHz, These results indicate that these InP/InGaAs SHBTs are suitable for low-voltage,low-power,and high-frequency applications.展开更多
Superlattice photonic crystals (SPhCs) possess considerablepotentials as building blocks for constructing high-performancedevices because of their great flexibilities in opticalmanipulation. From the prospective of pr...Superlattice photonic crystals (SPhCs) possess considerablepotentials as building blocks for constructing high-performancedevices because of their great flexibilities in opticalmanipulation. From the prospective of practical applications,scalable fabrication of SPhCs with large-area uniformity and precisegeometrical controllability has been considered as one prerequisitebut still remains a challenge.展开更多
In this study,we present the development of self-aligned p-channel Ga N back gate injection transistors(SA-BGITs)that exhibit a high ON-state current.This achievement is primarily attributed to the conductivity modula...In this study,we present the development of self-aligned p-channel Ga N back gate injection transistors(SA-BGITs)that exhibit a high ON-state current.This achievement is primarily attributed to the conductivity modulation effect of the 2-D electron gas(2DEG,the back gate)beneath the 2-D hole gas(2DHG)channel.SA-BGITs with a gate length of 1μm have achieved an impressive peak drain current(I_(D,MAX))of 9.9 m A/mm.The fabricated SA-BGITs also possess a threshold voltage of 0.15 V,an exceptionally minimal threshold hysteresis of 0.2 V,a high switching ratio of 10~7,and a reduced ON-resistance(RON)of 548Ω·mm.Additionally,the SA-BGITs exhibit a steep sub-threshold swing(SS)of 173 mV/dec,further highlighting their suitability for integration into Ga N logic circuits.展开更多
Self-aligned Titanium Silicide (Salicide), Light-Doped Drain (LDD) technology was studied. Results show that, this technology suppresses effectivily short-channel effects. The sheet resistance of active region decreas...Self-aligned Titanium Silicide (Salicide), Light-Doped Drain (LDD) technology was studied. Results show that, this technology suppresses effectivily short-channel effects. The sheet resistance of active region decreases by four times. The sheet resistance of polysilicon gate region decreases by one order of magnitute. Using this technology, the speed of the 3 μm NMOS 12-bits multiplier increases by two times relative to conventional one.展开更多
A1GaN/GaN fin-shaped metal-oxide-semiconductor high-electron-mobility transistors （fin-MOSHEMTs） with dif- ferent fin widths （30Ohm and lOOnm） on sapphire substrates are fabricated and characterized. High-quality ...A1GaN/GaN fin-shaped metal-oxide-semiconductor high-electron-mobility transistors （fin-MOSHEMTs） with dif- ferent fin widths （30Ohm and lOOnm） on sapphire substrates are fabricated and characterized. High-quality self-Migned Al2O3 gate dielectric underneath an 80-nm T-shaped gate is employed by Muminum self-oxidation, which induces 4 orders of magnitude reduction in the gate leakage current. Compared with conventional planar MOSHEMTs, short channel effects of the fabricated fin-MOSHEMTs are significantly suppressed due to the tri- gate structure, and excellent de characteristics are obtained, such as extremely fiat output curves, smaller drain induced barrier lower, smaller subthreshold swing, more positive threshold voltage, higher transconductance and higher breakdown voltage.展开更多
Recent reports suggest that aging is not solely a physiological process in living beings;instead, it should be considered a pathological process or disease(Amorim et al., 2022). Consequently, this process involves a w...Recent reports suggest that aging is not solely a physiological process in living beings;instead, it should be considered a pathological process or disease(Amorim et al., 2022). Consequently, this process involves a wide range of factors, spanning from genetic to environmental factors, and even includes the gut microbiome(GM)(Mayer et al., 2022). All these processes coincide at some point in the inflammatory process, oxidative stress, and apoptosis, at different degrees in various organs and systems that constitute a living organism(Mayer et al., 2022;AguilarHernández et al., 2023).展开更多
Sinter is the core raw material for blast furnaces.Flue pressure,which is an important state parameter,affects sinter quality.In this paper,flue pressure prediction and optimization were studied based on the shapley a...Sinter is the core raw material for blast furnaces.Flue pressure,which is an important state parameter,affects sinter quality.In this paper,flue pressure prediction and optimization were studied based on the shapley additive explanation(SHAP)to predict the flue pressure and take targeted adjustment measures.First,the sintering process data were collected and processed.A flue pressure prediction model was then constructed after comparing different feature selection methods and model algorithms using SHAP+extremely random-ized trees(ET).The prediction accuracy of the model within the error range of±0.25 kPa was 92.63%.SHAP analysis was employed to improve the interpretability of the prediction model.The effects of various sintering operation parameters on flue pressure,the relation-ship between the numerical range of key operation parameters and flue pressure,the effect of operation parameter combinations on flue pressure,and the prediction process of the flue pressure prediction model on a single sample were analyzed.A flue pressure optimization module was also constructed and analyzed when the prediction satisfied the judgment conditions.The operating parameter combination was then pushed.The flue pressure was increased by 5.87%during the verification process,achieving a good optimization effect.展开更多
Self-aligned multiple patterning (SAMP) can enable the semiconductor scaling before EUV lithography becomes mature for industry use.Theoretically any small size of pitch can be achieved by repeating SADP on same wafer...Self-aligned multiple patterning (SAMP) can enable the semiconductor scaling before EUV lithography becomes mature for industry use.Theoretically any small size of pitch can be achieved by repeating SADP on same wafer but with challenges of pitch walking and line cut since line cut has to be done by lithography instead of self-aligned method.Line cut can become an issue at sub-30nm pitch due to edge placement error (EPE).In this paper we will discuss some recent novel ideas on line cut after self-aligned multiple patterning.展开更多
Photovoltaic (PV) modules, as essential components of solar power generation systems, significantly influence unitpower generation costs.The service life of these modules directly affects these costs. Over time, the p...Photovoltaic (PV) modules, as essential components of solar power generation systems, significantly influence unitpower generation costs.The service life of these modules directly affects these costs. Over time, the performanceof PV modules gradually declines due to internal degradation and external environmental factors.This cumulativedegradation impacts the overall reliability of photovoltaic power generation. This study addresses the complexdegradation process of PV modules by developing a two-stage Wiener process model. This approach accountsfor the distinct phases of degradation resulting from module aging and environmental influences. A powerdegradation model based on the two-stage Wiener process is constructed to describe individual differences inmodule degradation processes. To estimate the model parameters, a combination of the Expectation-Maximization(EM) algorithm and the Bayesian method is employed. Furthermore, the Schwarz Information Criterion (SIC) isutilized to identify critical change points in PV module degradation trajectories. To validate the universality andeffectiveness of the proposed method, a comparative analysis is conducted against other established life predictiontechniques for PV modules.展开更多
Recently published in Joule,Feng Liu and colleagues from Shanghai Jiaotong University reported a record-breaking 20.8%power conversion efficiency in organic solar cells(OSCs)with an interpenetrating fibril network act...Recently published in Joule,Feng Liu and colleagues from Shanghai Jiaotong University reported a record-breaking 20.8%power conversion efficiency in organic solar cells(OSCs)with an interpenetrating fibril network active layer morphology,featuring a bulk p-in structure and proper vertical segregation achieved through additive-assisted layer-by-layer deposition.This optimized hierarchical gradient fibrillar morphology and optical management synergistically facilitates exciton diffusion,reduces recombination losses,and enhances light capture capability.This approach not only offers a solution to achieving high-efficiency devices but also demonstrates the potential for commercial applications of OSCs.展开更多
Fenton and Fenton-like processes,which could produce highly reactive species to degrade organic contaminants,have been widely used in the field of wastewater treatment.Therein,the chemistry of Fenton process including...Fenton and Fenton-like processes,which could produce highly reactive species to degrade organic contaminants,have been widely used in the field of wastewater treatment.Therein,the chemistry of Fenton process including the nature of active oxidants,the complicated reactions involved,and the behind reason for its strongly pH-dependent performance,is the basis for the application of Fenton and Fenton-like processes in wastewater treatment.Nevertheless,the conflicting views still exist about the mechanism of the Fenton process.For instance,reaching a unanimous consensus on the nature of active oxidants(hydroxyl radical or tetravalent iron)in this process remains challenging.This review comprehensively examined the mechanism of the Fenton process including the debate on the nature of active oxidants,reactions involved in the Fenton process,and the behind reason for the pH-dependent degradation of contaminants in the Fenton process.Then,we summarized several strategies that promote the Fe(Ⅱ)/Fe(Ⅲ)cycle,reduce the competitive consumption of active oxidants by side reactions,and replace the Fenton reagent,thus improving the performance of the Fenton process.Furthermore,advances for the future were proposed including the demand for the high-accuracy identification of active oxidants and taking advantages of the characteristic of target contaminants during the degradation of contaminants by the Fenton process.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61076077 and 61106120the National Basic Research Program of China under Grant No 2011CB922103.
文摘Using lateral phase change random access memory(PCRAM)for demonstration,we report a self-aligned process to fabricate a metal electrode-quantum dot(QD)/nanowire(NW)-metal electrode structure.Due to the good confinement and coupling between the Ge_(2)Sb_(2)Te_(5)(GST)QD and the tungsten electrodes,the device shows a threshold current and voltage as small as 2.50μA and 1.08 V,respectively.Our process is highlighted with good controllability and repeatability with 100%yield,making it a promising fabrication process for nanoelectronics.
基金Project supported by the National Natural Science Foundation of China （Grant No 60376024）.
文摘N and P-channel groove-gate MOSFETs based on a self-aligned CMOS process have been fabricated and characterized. For the devices with channel length of 140nm, the measured drain induced barrier lowering （DIBL） was 66mV/V for n-MOSFETs and 82mV/V for p-MOSFETs. The substrate current of a groove-gate n-MOSFET was 150 times less than that of a conventional planar n-MOSFET, These results demonstrate that groove-gate MOSFETs have excellent capabilities in suppressing short-channel effects. It is worth emphasizing that our groove-gate MOSFET devices are fabricated by using a simple process flow, with the potential of fabricating devices in the sub-100nm range.
基金supported by the National Basic Research Program of China(No.2011CB922103)the National Natural Science Foundation of China(Nos.61376420,61404126,A040203)
文摘A self-aligned process to fabricate a ＂metal-quantum dot-metal＂ structure is presented, based on an ＂electron beam lithography, thin film deposition and dry etching process＂. The sacrificial layers used can improve the lift-off process, and novel lithography layouts design can improve the mechanical strength of the fabricated nanostructures. The superiority of the self-aligned process includes low request for overlay accuracy, high compatibility with a variety of materials, and applicable to similar structure devices fabrication. Finally, a phase change memory with fully confined phase-change material node, with the length × width × height of 255 × 45 × 30 nm^3 was demonstrated.
文摘Agricultural Products Processing and Storage(ISSN 3059-4510,Owner:Hunan Academy of Agricultural Sciences,China.Production and hosting:Springer Nature)is an international,peer-reviewed open access journal with the aim to offer a platform for the rapid dissemination of signifi cant,novel,and high-impact research in the fi elds of agricultural product processing science,technology,engineering,and nutrition.Additionally,supplemental issues are curated and published to facilitate in-depth discussions on special topics.
文摘The aging process is an inexorable fact throughout our lives and is considered a major factor in develo ping neurological dysfunctions associated with cognitive,emotional,and motor impairments.Aging-associated neurodegenerative diseases are characterized by the progressive loss of neuronal structure and function.
基金supported by the National Natural Science Foundation of China(Grant No.42130312)。
文摘The complexity of the seismicity pattern for the subduction zone along the oceanic plate triggered the outer rise events and revealed cyclic tectonic deformation conditions along the plate subduction zones.The outer rise earthquakes have been observed along the Sunda arc,following the estimated rupture area of the 2005 M_(W)8.6 Nias earthquakes.Here,we used kinematic waveform inversion(KIWI)to obtain the source parameters of the 14 May 2021 M_(W)6.6 event off the west coast of northern Sumatra and to define the fault plane that triggered this outer rise event.The KIWI algorithm allows two types of seismic source to be configured:the moment tensor model to describe the type of shear with six moment tensor components and the Eikonal model for the rupture of pure double-couple sources.This method was chosen for its flexibility to be applied for different sources of seismicity and also for the automated full-moment tensor solution with real-time monitoring.We used full waveform traces from 8 broadband seismic stations within 1000 km epicentral distances sourced from the Incorporated Research Institutions for Seismology(IRIS-IDA)and Geofon GFZ seismic record databases.The initial origin time and hypocenter values are obtained from the IRIS-IDA.The synthetic seismograms used in the inversion process are based on the existing regional green function database model and were accessed from the KIWI Tools Green's Function Database.The obtained scalar seismic moment value is 1.18×10^(19)N·m,equivalent to a moment magnitude M_(W)6.6.The source parameters are 140°,44°,and−99°for the strike,dip,and rake values at a centroid depth of 10.2 km,indicating that this event is a normal fault earthquake that occurred in the outer rise area.The outer rise events with normal faults typically occur at the shallow part of the plate,with nodal-plane dips predominantly in the range of 30°-60°on the weak oceanic lithosphere due to hydrothermal alteration.The stress regime around the plate subduction zone varies both temporally and spatially due to the cyclic influences of megathrust earthquakes.Tensional outer rise earthquakes tend to occur after the megathrust events.The relative timing of these events is not known due to the viscous relaxation of the down going slab and poroelastic response in the trench slope region.The occurrence of the 14 May 2021 earthquake shows the seismicity in the outer rise region in the strongly coupled Sunda arc subduction zone due to elastic bending stress within the duration of the seismic cycle.
基金Funded by the National Natural Science Foundation of China(No.52278446)。
文摘To explore the best preparation process for terminal blend(TB)composite-modified asphalt and to filter its formulation with excellent performance,this study evaluates the performance of TB composite modified asphalt by physical property index,microscopic morphology,rheological testing,and infrared spectroscopy on multiple scales.The results show that the best preparation process for TB-modified asphalt is stirring at 260℃ for 4 h at 400 rpm,which significantly reduces the modification time of the asphalt.From a physical property viewpoint,the TB composite-modified asphalt sample with 5% styrene-butadiene-styrene(SBS)+1% aromatics+0.1% sulfur exhibits high-comprehensive,high-and low-temperature properties.More-over,its crosslinked mesh structure comprises black rubber particles uniformly interwoven in the middle,which further enhances the performance of the asphalt and results in an excellent performance formulation.In addition,the sample with 5%SBS content has a higher G*value and smaller δ value than that with 3%SBS content,indicating that its high-temperature resistance is improved.The effect of adding 3%SBS content on the viscoelastic ratio is,to some extent,less than that caused by 20% rubber powder.
基金financial support of the National Natural Science Foundation of China(No.52371103)the Fundamental Research Funds for the Central Universities,China(No.2242023K40028)+1 种基金the Open Research Fund of Jiangsu Key Laboratory for Advanced Metallic Materials,China(No.AMM2023B01).financial support of the Research Fund of Shihezi Key Laboratory of AluminumBased Advanced Materials,China(No.2023PT02)financial support of Guangdong Province Science and Technology Major Project,China(No.2021B0301030005)。
文摘Oxide dispersion strengthened(ODS)alloys are extensively used owing to high thermostability and creep strength contributed from uniformly dispersed fine oxides particles.However,the existence of these strengthening particles also deteriorates the processability and it is of great importance to establish accurate processing maps to guide the thermomechanical processes to enhance the formability.In this study,we performed particle swarm optimization-based back propagation artificial neural network model to predict the high temperature flow behavior of 0.25wt%Al2O3 particle-reinforced Cu alloys,and compared the accuracy with that of derived by Arrhenius-type constitutive model and back propagation artificial neural network model.To train these models,we obtained the raw data by fabricating ODS Cu alloys using the internal oxidation and reduction method,and conducting systematic hot compression tests between 400 and800℃with strain rates of 10^(-2)-10 S^(-1).At last,processing maps for ODS Cu alloys were proposed by combining processing parameters,mechanical behavior,microstructure characterization,and the modeling results achieved a coefficient of determination higher than>99%.
文摘An emitter self-aligned InP-based single heterojunction bipolar transistor with a cutoff frequency （fT） of 162GHz is reported. The emitter size is 0.8μm × 12μm, the maximum DC gain is 120, the offset voltage is 0.10V,and the typical breakdown voltage at Ic = 0. 1μA is 3.8V. This device is suitable for high-speed low-power applications,such as OEIC receivers and analog-to-digital converters.
文摘A self-aligned InP/GalnAs single heterojunction bipolar transistor（HBT） is investigated using a novel T-shaped emitter. A U-shaped emitter layout,selective wet etching,laterally etched undercut, and an air-bridge are applied in this process. The device, which has a 2μm×12μm U-shaped emitter area,demonstrates a common-emitter DC current gain of 170,an offset voltage of 0.2V,a knee voltage of 0.5V, and an open-base breakdown voltage of over 2V. The HBT exhibits good microwave performance with a current gain cutoff frequency of 85GHz and a maximum oscillation frequency of 72GHz, These results indicate that these InP/InGaAs SHBTs are suitable for low-voltage,low-power,and high-frequency applications.
文摘Superlattice photonic crystals (SPhCs) possess considerablepotentials as building blocks for constructing high-performancedevices because of their great flexibilities in opticalmanipulation. From the prospective of practical applications,scalable fabrication of SPhCs with large-area uniformity and precisegeometrical controllability has been considered as one prerequisitebut still remains a challenge.
基金supported in part by the National Key Research and Development Program of China under Grant2022YFB3604400in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS)+5 种基金in part by CAS-Croucher Funding Scheme under Grant CAS22801in part by National Natural Science Foundation of China under Grant 62334012,Grant 62074161,Grant 62004213,Grant U20A20208Grant 62304252in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018in part by the University of CASin part by IMECAS-HKUST-Joint Laboratory of Microelectronics。
文摘In this study,we present the development of self-aligned p-channel Ga N back gate injection transistors(SA-BGITs)that exhibit a high ON-state current.This achievement is primarily attributed to the conductivity modulation effect of the 2-D electron gas(2DEG,the back gate)beneath the 2-D hole gas(2DHG)channel.SA-BGITs with a gate length of 1μm have achieved an impressive peak drain current(I_(D,MAX))of 9.9 m A/mm.The fabricated SA-BGITs also possess a threshold voltage of 0.15 V,an exceptionally minimal threshold hysteresis of 0.2 V,a high switching ratio of 10~7,and a reduced ON-resistance(RON)of 548Ω·mm.Additionally,the SA-BGITs exhibit a steep sub-threshold swing(SS)of 173 mV/dec,further highlighting their suitability for integration into Ga N logic circuits.
文摘Self-aligned Titanium Silicide (Salicide), Light-Doped Drain (LDD) technology was studied. Results show that, this technology suppresses effectivily short-channel effects. The sheet resistance of active region decreases by four times. The sheet resistance of polysilicon gate region decreases by one order of magnitute. Using this technology, the speed of the 3 μm NMOS 12-bits multiplier increases by two times relative to conventional one.
基金Supported by the National Natural Science Foundation of China under Grant No 61306113
文摘A1GaN/GaN fin-shaped metal-oxide-semiconductor high-electron-mobility transistors （fin-MOSHEMTs） with dif- ferent fin widths （30Ohm and lOOnm） on sapphire substrates are fabricated and characterized. High-quality self-Migned Al2O3 gate dielectric underneath an 80-nm T-shaped gate is employed by Muminum self-oxidation, which induces 4 orders of magnitude reduction in the gate leakage current. Compared with conventional planar MOSHEMTs, short channel effects of the fabricated fin-MOSHEMTs are significantly suppressed due to the tri- gate structure, and excellent de characteristics are obtained, such as extremely fiat output curves, smaller drain induced barrier lower, smaller subthreshold swing, more positive threshold voltage, higher transconductance and higher breakdown voltage.
基金funded by CONAHCYT grant(252808)to GFCONAHCYT’s“Estancias Posdoctorales por México”program(662350)to HTB。
文摘Recent reports suggest that aging is not solely a physiological process in living beings;instead, it should be considered a pathological process or disease(Amorim et al., 2022). Consequently, this process involves a wide range of factors, spanning from genetic to environmental factors, and even includes the gut microbiome(GM)(Mayer et al., 2022). All these processes coincide at some point in the inflammatory process, oxidative stress, and apoptosis, at different degrees in various organs and systems that constitute a living organism(Mayer et al., 2022;AguilarHernández et al., 2023).
基金supported by the General Program of the National Natural Science Foundation of China(No.52274326)the China Baowu Low Carbon Metallurgy Innovation Foundation(No.BWLCF202109)the Seventh Batch of Ten Thousand Talents Plan of China(No.ZX20220553).
文摘Sinter is the core raw material for blast furnaces.Flue pressure,which is an important state parameter,affects sinter quality.In this paper,flue pressure prediction and optimization were studied based on the shapley additive explanation(SHAP)to predict the flue pressure and take targeted adjustment measures.First,the sintering process data were collected and processed.A flue pressure prediction model was then constructed after comparing different feature selection methods and model algorithms using SHAP+extremely random-ized trees(ET).The prediction accuracy of the model within the error range of±0.25 kPa was 92.63%.SHAP analysis was employed to improve the interpretability of the prediction model.The effects of various sintering operation parameters on flue pressure,the relation-ship between the numerical range of key operation parameters and flue pressure,the effect of operation parameter combinations on flue pressure,and the prediction process of the flue pressure prediction model on a single sample were analyzed.A flue pressure optimization module was also constructed and analyzed when the prediction satisfied the judgment conditions.The operating parameter combination was then pushed.The flue pressure was increased by 5.87%during the verification process,achieving a good optimization effect.
文摘Self-aligned multiple patterning (SAMP) can enable the semiconductor scaling before EUV lithography becomes mature for industry use.Theoretically any small size of pitch can be achieved by repeating SADP on same wafer but with challenges of pitch walking and line cut since line cut has to be done by lithography instead of self-aligned method.Line cut can become an issue at sub-30nm pitch due to edge placement error (EPE).In this paper we will discuss some recent novel ideas on line cut after self-aligned multiple patterning.
基金supported by the National Natural Science Foundation of China(51767017)the Basic Research Innovation Group Project of Gansu Province(18JR3RA133)the Industrial Support and Guidance Project of Universities in Gansu Province(2022CYZC-22).
文摘Photovoltaic (PV) modules, as essential components of solar power generation systems, significantly influence unitpower generation costs.The service life of these modules directly affects these costs. Over time, the performanceof PV modules gradually declines due to internal degradation and external environmental factors.This cumulativedegradation impacts the overall reliability of photovoltaic power generation. This study addresses the complexdegradation process of PV modules by developing a two-stage Wiener process model. This approach accountsfor the distinct phases of degradation resulting from module aging and environmental influences. A powerdegradation model based on the two-stage Wiener process is constructed to describe individual differences inmodule degradation processes. To estimate the model parameters, a combination of the Expectation-Maximization(EM) algorithm and the Bayesian method is employed. Furthermore, the Schwarz Information Criterion (SIC) isutilized to identify critical change points in PV module degradation trajectories. To validate the universality andeffectiveness of the proposed method, a comparative analysis is conducted against other established life predictiontechniques for PV modules.
基金Technology Development Program of Jilin Province(YDZJ202201ZYTS640)the National Key Research and Development Program of China(2022YFB4200400)funded by MOST+4 种基金the National Natural Science Foundation of China(52172048 and 52103221)Shandong Provincial Natural Science Foundation(ZR2021QB024 and ZR2021ZD06)Guangdong Basic and Applied Basic Research Foundation(2023A1515012323,2023A1515010943,and 2024A1515010023)the Qingdao New Energy Shandong Laboratory open Project(QNESL OP 202309)the Fundamental Research Funds of Shandong University.
文摘Recently published in Joule,Feng Liu and colleagues from Shanghai Jiaotong University reported a record-breaking 20.8%power conversion efficiency in organic solar cells(OSCs)with an interpenetrating fibril network active layer morphology,featuring a bulk p-in structure and proper vertical segregation achieved through additive-assisted layer-by-layer deposition.This optimized hierarchical gradient fibrillar morphology and optical management synergistically facilitates exciton diffusion,reduces recombination losses,and enhances light capture capability.This approach not only offers a solution to achieving high-efficiency devices but also demonstrates the potential for commercial applications of OSCs.
基金supported by the National Natural Science Foundation of China(Nos.22206050 and 52270047).
文摘Fenton and Fenton-like processes,which could produce highly reactive species to degrade organic contaminants,have been widely used in the field of wastewater treatment.Therein,the chemistry of Fenton process including the nature of active oxidants,the complicated reactions involved,and the behind reason for its strongly pH-dependent performance,is the basis for the application of Fenton and Fenton-like processes in wastewater treatment.Nevertheless,the conflicting views still exist about the mechanism of the Fenton process.For instance,reaching a unanimous consensus on the nature of active oxidants(hydroxyl radical or tetravalent iron)in this process remains challenging.This review comprehensively examined the mechanism of the Fenton process including the debate on the nature of active oxidants,reactions involved in the Fenton process,and the behind reason for the pH-dependent degradation of contaminants in the Fenton process.Then,we summarized several strategies that promote the Fe(Ⅱ)/Fe(Ⅲ)cycle,reduce the competitive consumption of active oxidants by side reactions,and replace the Fenton reagent,thus improving the performance of the Fenton process.Furthermore,advances for the future were proposed including the demand for the high-accuracy identification of active oxidants and taking advantages of the characteristic of target contaminants during the degradation of contaminants by the Fenton process.
