Anti-phase domain defects easily form in the in-plane GaAs nanowires(NWs)grown on CMOS-compatiblegroup IV substrates,which makes it difficult to obtain GaAs NWs with a designed length and also leads to asignificant li...Anti-phase domain defects easily form in the in-plane GaAs nanowires(NWs)grown on CMOS-compatiblegroup IV substrates,which makes it difficult to obtain GaAs NWs with a designed length and also leads to asignificant limitation in the growth of high-quality in-plane GaAs NW networks on such substrates.Here,wereport on the selective area growth of anti-phase domain-free in-plane GaAs NWs and NW networks on Ge(111)substrates.Detailed structural studies confirm that the GaAs NW grown using a large pattern period and GaAsNW networks grown by adding the Sb are both high-quality pure zinc-blende single crystals free of stackingfaults,twin defects,and anti-phase domain defects.Room-temperature photoluminescence measurements show asubstantial improvement in crystal quality and good consistency and uniformity of the GaAs NW networks.Ourwork provides useful insights into the controlled growth of high-quality anti-phase domain-defects-free in-planeIII-V NWs and NW networks.展开更多
High performance 1 57μm spotsize converter monolithically integrated DFB is fabricated by the technique of self aligned selective area growth.The upper optical confinement layer and the butt coupled tapered thickn...High performance 1 57μm spotsize converter monolithically integrated DFB is fabricated by the technique of self aligned selective area growth.The upper optical confinement layer and the butt coupled tapered thickness waveguide are regrown simultaneously,which not only offeres the separated optimization of the active region and the integrated spotsize converter,but also reduces the difficulty of the butt joint selective regrowth.The threshold current is as low as 4 4mA.The output power at 49mA is 10 1mW.The side mode suppression ratio (SMSR) is 33 2dB.The vertical and horizontal far field divergence angles are as small as 9° and 15° respectively,the 1dB misalignment tolerance are 3 6μm and 3 4μm.展开更多
CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen （H2）/nitrogen （N2） and growth temperature of the selective area growth （SAG） method with metal organic chemical vapor deposit...CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen （H2）/nitrogen （N2） and growth temperature of the selective area growth （SAG） method with metal organic chemical vapor deposition （MOCVD）. The SAG template is obtained by nanospherical-lens photolithography. It is found that increasing the flow rate of 1-12 will change the CaN crystal shape from pyramid to vertical rod, while increasing the growth temperature will reduce the diameters of GaN rods to nanometer scale. Finally the CaN nanorods with smooth lateral surface and relatively good quality are obtained under the condition that the H2：N2 ratio is 1：1 and the growth temperature is 1030℃. The good crystal quality and orientation of GaN nanorods are confirmed by high resolution transmission electron microscopy. The cathodoluminescence spectrum suggests that the crystal and optical quality is also improved with increasing the temperature.展开更多
A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13mA. The output power exceeds 10mW at 0V bias when...A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13mA. The output power exceeds 10mW at 0V bias when the injection current of the distributed feedback laser is 100mA at 25℃. The side mode suppression ratio is over 50 dB. A 32Gb/s eye diagram is measured with a 3.SVpp nonreturn-to-zero pseudorandom modulation signal at -2.3 V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained.展开更多
A high quality of GaAs crystal growth in nanoscale V-shape trenches on Si（O01） substrates is achieved by using the aspect-ratio trapping method. GaAs thin films are deposited via metal-organic chemical vapor deposit...A high quality of GaAs crystal growth in nanoscale V-shape trenches on Si（O01） substrates is achieved by using the aspect-ratio trapping method. GaAs thin films are deposited via metal-organic chemical vapor deposition by using a two-step growth process. Threading disJocations arising from lattice mismatch are trapped by laterally confining sidewalls, and antiphase domains boundaries are completely restricted by V-groove trenches with Si { 111} facets. Material quality is confirmed by scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and high resolution X-ray diffraction. Low temperature photoluminescence （PL） measurement is used to analyze the thermal strain relaxation in GaAs layers. This approach shows great promise for the realization of high mobility devices or optoelectronie integrated circuits on Si substrates.展开更多
Monolithic white-light-emitting diodes(white LEDs) without phosphors are demonstrated using In GaN/GaN multiple quantum wells(MQWs) grown on GaN microrings formed by selective area epitaxy on SiO_2 mask patterns. The...Monolithic white-light-emitting diodes(white LEDs) without phosphors are demonstrated using In GaN/GaN multiple quantum wells(MQWs) grown on GaN microrings formed by selective area epitaxy on SiO_2 mask patterns. The microring structure is composed of {1-101} semi-polar facets and a(0001) c-plane, attributed to favorable surface polarity and surface energy. The white light is realized by combining short and long wavelengths of electroluminescence emissions from In GaN /GaN MQWs on the {1-101} semi-polar facets and the(0001) c-plane,respectively. The change in the emission wavelengths from each microfacet is due to the In composition variations of the MQWs. These results suggest that white emission can possibly be obtained without using phosphors by combining emission light from microstructures.展开更多
We report a selective area growth（SAG） method to define the p-GaN gate of AlGaN/GaN high electron mobility transistors（HEMTs） by metal-organic chemical vapor deposition.Compared with Schottky gate HEMTs,the SAG p-...We report a selective area growth（SAG） method to define the p-GaN gate of AlGaN/GaN high electron mobility transistors（HEMTs） by metal-organic chemical vapor deposition.Compared with Schottky gate HEMTs,the SAG p-GaN gate HEMTs show more positive threshold voltage（Vth） and better gate control ability.The influence of Cp2Mg flux of SAG p-GaN gate on the AlGaN/GaN HEMTs has also been studied.With the increasing Cp2Mg from 0.16 μmol/min to 0.20 μmol/min,the Vth raises from-0.67 V to-0.37 V.The maximum transconductance of the SAG HEMT at a drain voltage of 10 V is 113.9 mS/mm while that value of the Schottky HEMT is 51.6 mS/mm.The SAG method paves a promising way for achieving p-GaN gate normally-off AlGaN/GaN HEMTs without dry etching damage.展开更多
Selective area electron diffraction(SAED)patterns can provide valuable insight into the structure of a material.However,the manual identification of collected patterns can be a significant bottleneck in the overall ph...Selective area electron diffraction(SAED)patterns can provide valuable insight into the structure of a material.However,the manual identification of collected patterns can be a significant bottleneck in the overall phase classification workflow.In this work,we utilize the recent advances in computer vision and machine learning(ML)to automate the indexing of SAED patterns.The performance of six different ML algorithms is demonstrated using metallic plutonium-zirconium alloys.The most successful approach trained a neural network(NN)to make a classification of the phase and zone axis,and then utilized a second NN to synthesize multiple independent predictions of different tilts in a single sample to make an overall phase identification.The results demonstrate that automated SAED phase identification using ML is a viable route to accelerate materials characterization.展开更多
InP-based photonics integration is becoming a competi- tive candidate for realizing optical modules with enhanced functionality at a reduced cost, especially in optical com- munication systems, since the proposal of w...InP-based photonics integration is becoming a competi- tive candidate for realizing optical modules with enhanced functionality at a reduced cost, especially in optical com- munication systems, since the proposal of wavelength division multiplexing （WDM）. In recent years, network traffic has raised demands for high capacity, high speed transmission systems.展开更多
Selected area grain boundary diffusion(SAGBD)has shown potential in enhancing the coercivity of thick Nd-Fe-B magnets while minimizing the consumption of heavy rare earths.However,the relationships among the SAGBD pro...Selected area grain boundary diffusion(SAGBD)has shown potential in enhancing the coercivity of thick Nd-Fe-B magnets while minimizing the consumption of heavy rare earths.However,the relationships among the SAGBD process,diffusion efficiency,and performance enhancement of the magnets have not yet been well established.Here,different grain boundary diffusion(GBD)approaches were proposed to treat the magnets with different thicknesses using a Tb-Cu alloy diffusion source.The SAGBD was approached with the source diffused from the twelve edge areas of the magnet and from eight vertices of the magnet were called SA-edge and Vertex GBD,respectively.Those diffusing from the edge areas of the four side planes and two c-planes were named SA-ab and SA-c diffusions,respectively.The GBDs from two easy magnetization planes(c-plane)and two parallel planes perpendicular to the c-plane were named c-plane and a-plane diffusions,respectively.It was found that the optimal GBD approaches for the magnets with thicknesses of 5,7.5,10,and 12.5 mm were c-plane,c-plane,SA-edge,and SA-ab diffusions,respectively.Specifically,the SA-ab diffusion shows the highest utilization efficiency of Tb in 12.5 mm-thick magnets,reaching a value of 405.5 kA m-1/wt.%,which is 2.9 and 3.8 times higher than c-plane and SA-c diffusions,respectively.In addition,similar magnetic properties were obtained by c-plane and a-plane diffusions,suggesting that Tb-Cu diffusion does not exhibit significant anisotropic behavior.The microstructure observations and micromagnetic simulations suggest that the reversed domains tend to nucleate at the edges and corners of the magnet.The Vertex diffusion can directly hinder the nucleation and propagation of reversed domains at the corners,but the SA-edge diffusion can effectively postpone their rapid propagation over the entire magnet.This study provides the guidelines for the future development of SAGBD for sintered Nd-Fe-B magnets.展开更多
Migration characterizations of Ga and In adatoms on the dielectric surface in selective metal organic vapor phase epitaxy （MOVPE） were investigated. In the typical MOVPE environment, the selectivity of growth is pre...Migration characterizations of Ga and In adatoms on the dielectric surface in selective metal organic vapor phase epitaxy （MOVPE） were investigated. In the typical MOVPE environment, the selectivity of growth is preserved for GaN, and the growth rate of GaN micro-pyramids is sensitive to the period of the patterned SiO2 mask. A surface migration induced model was adopted to figure out the effective migration length of Ga adatoms on the dielectric surface. Different from the growth of GaN, the selective area growth of InGaN on the patterned template would induce the deposition of InGaN polycrystalline particles on the patterned Si02 mask with a long period. It was demonstrated with a scanning electron microscope and energy dispersive spectroscopy that the In adatoms exhibit a shorter migration length on the dielectric surface.展开更多
Ga N micro-pyramids with AlGaN capping layer are grown by selective metal–organic–vapor phase epitaxy（MOVPE）. Compared with bare Ga N micro-pyramids, AlGaN/Ga N micro-pyramids show wrinkling morphologies at the bo...Ga N micro-pyramids with AlGaN capping layer are grown by selective metal–organic–vapor phase epitaxy（MOVPE）. Compared with bare Ga N micro-pyramids, AlGaN/Ga N micro-pyramids show wrinkling morphologies at the bottom of the structure. The formation of those special morphologies is associated with the spontaneously formed AlGaN polycrystalline particles on the dielectric mask, owing to the much higher bond energy of Al–N than that of Ga–N. When the sizes of the polycrystalline particles are larger than 50 nm, the uniform source supply behavior is disturbed, thereby leading to unsymmetrical surface morphology. Analysis reveals that the scale of surface wrinkling is related to the migration length of Ga adatoms along the AlGaN {1ī01} facet. The migration properties of Al and Ga further affect the distribution of Al composition along the sidewalls, characterized by the μ-PL measurement.展开更多
Accordion-shaped traps are widely used in China to catch the Asian paddle crab C harybdis japonica but traps of conventional design often catch juvenile crabs. A new type of accordion-shaped trap with an escape vent(L...Accordion-shaped traps are widely used in China to catch the Asian paddle crab C harybdis japonica but traps of conventional design often catch juvenile crabs. A new type of accordion-shaped trap with an escape vent(L×W=4.3 cm×3.0 cm) was designed and a comparative study between the newly designed and conventional traps was performed in the artifi cial reef area of Zhuwang, Laizhou Bay, China from June to August 2012. The mean catch per unit effort(CPUE) of undersized crabs was signifi cantly lower in the vented traps than in the conventional traps(paired t-test, n =30, P <0.001), while the CPUE of marketable crabs was signifi cantly higher in the vented traps(paired t-test, n =30, P <0.001). The mean size of crabs(carapace length) caught in the vented traps was signifi cantly larger than in conventional traps(paired t-test, n =29, P <0.001). The ratio of undersized crabs was 35.05%±2.57% in conventional traps and 12.53%±0.69% in vented traps(signifi cantly lower, paired t-test, n =29, P <0.001). Therefore, a 4.3 cm×3.0 cm escape vent was considered appropriate for C. japonica fi shing in the artifi cial reef area. This fi nding will assist the development of more sustainable and effi cient crab fi shing methods using accordion-shaped traps.展开更多
To improve energy conversion efficiency, optimization of the working fluids in organic Rankine cycles(ORCs) was explored in the range of low-temperature heat sources. The concept of unit-heat-exchange-area(UHEA) net p...To improve energy conversion efficiency, optimization of the working fluids in organic Rankine cycles(ORCs) was explored in the range of low-temperature heat sources. The concept of unit-heat-exchange-area(UHEA) net power, embodying the cost/performance ratio of an ORC system, was proposed as a new indicator to judge the suitability of ORC working fluids on a given condition. The heat exchange area was computed by an improved evaporator model without fixing the minimum temperature difference between working fluid and hot fluid, and the flow pattern transition during heat exchange was also taken into account. The maximum UHEA net powers obtained show that dry organic fluids are more suitable for ORCs than wet organic fluids to recover low-temperature heat. The organic fluid 1-butene is recommended if the inlet temperature of hot fluid is 353.15-363.15 K or443.15-453.15 K, heptane is more suitable at 373.15-423.15 K, and R245 ca is a good option at 483.15-503.15 K.展开更多
The selected area electron diffraction （SAED） pattern of magnetic iron oxide core/gold shell nanoparticles has been studied. For the composite particles with mean size less than 10 nm, their SAED pattern is found to...The selected area electron diffraction （SAED） pattern of magnetic iron oxide core/gold shell nanoparticles has been studied. For the composite particles with mean size less than 10 nm, their SAED pattern is found to be different from either the pattern of pure Fe oxide nanoparticles or that of pure Au particles. Based on the fact that the ring diameters of these composite particles fit the characteristic relation for the fcc structure, the Au atoms on surfaces of the concerned particles are supposed to pack in a way more tightly than they usually do in pure Au nanoparticles. The driving force for this is the coherency strain which enables the shell material at the heterostructured interface to adapt the lattice parameters of the core.展开更多
Existing evaluation methods used for the development area selection for commingled production of tight gas and coalbed methane(CBM)are poorly universal and their parameters(e.g.reserves and reservoir physical properti...Existing evaluation methods used for the development area selection for commingled production of tight gas and coalbed methane(CBM)are poorly universal and their parameters(e.g.reserves and reservoir physical properties)cannot reflect the production rate difference during commingled production of tight gas and CBM.In this paper,an integrated evaluation coefficient used for evaluating favorable commingled production areas of tight gas and CBM was defined so as to establish a universal quantitative evaluation index system.Then,by means of orthogonal design together with numerical simulation,the key parameters influencing the commingled production rate and their influence degree on the production rate were determined by taking the commingled production rate as the evaluation target.Finally,a new quantitative evaluation method for the development area selection for commingled production of tight gas and CBM was established.And the following research results were obtained.First,by virtue of the new quantitative evaluation method,the geological occurrence model of tight gas and CBM,the key evaluation parameter and the orthogonal experiment design are established,and the influence degree of evaluation parameters on production rate and the integrated evaluation coefficient of favorable commingled production area of tight gas and CBM are determined.Second,the quantitative evaluation results on the development areas of commingled production of tight gas and CBM in KNW Block based on 12 selected key parameters show that the southern KNW Block and the Well block KNW-37 in the north of KNW Block are the favorable areas for single production of tight gas,Well blocks KNW-10,KNW-33 and KNW-9 are the favorable areas for single production of CBM,and the central and southwestern areas are the favorable areas for the commingled production of tight gas and CBM.In conclusion,this new quantitative evaluation method is universal and can be used as reference for the development area selection for commingled production of tight gas and CBM.展开更多
At present,the increase in proved reserves and production of coalbed methane(CBM)in China depends mainly on several CBM bases in the southern Qinshui Basin and in the eastern margin of the Ordos Basin.Therefore,it is ...At present,the increase in proved reserves and production of coalbed methane(CBM)in China depends mainly on several CBM bases in the southern Qinshui Basin and in the eastern margin of the Ordos Basin.Therefore,it is urgent to find new batches of exploration and development strategic replacement areas.For this purpose,we investigated the resources,reservoir properties,preservation conditions,and development conditions of CBM in China,and put forward eight general factors and four critical factors that can be used in establishing selection criteria of strategic replacement areas for affecting the CBM exploration and development in China.The eight general factors are resource abundance,coalbed thickness,gas content,original permeability,burial depth,hydrogeological conditions,coalbed depositional environment,and landforms,and the four critical factors include genetic type,stability type,later reservoir reformation,and damage degree of coal structure.Comparison shows that the low-rank coal area in the northwestern area,the northeastern medium-low rank coal area,and the southwestern medium-high rank and structurally-complex coal area are the major replacement areas for CBM following the northern area of China.Key factors affecting CBM enrichment in each of the three key areas,respectively,are:a)genetic type and stability of coal seams,b)genetic type and reconstruction of the reservoir by volcanic intrusion,and c)stability of coal seams and damage degree of coal structure.Based on these factors,a system for selection and evaluation of strategic replacement areas for CBM development was established.Fifteen blocks in the above three areas were evaluated by using multi-layered fuzzy mathematics,selecting eight favorable areas and seven relatively favorable areas that contain 1.8 trillion m^(3) of predicted CBM geological resources.The eight favorable areas include the Wucaiwan-Dajing coal exploration area in the Zhundong coalfield(eastern Junggar Basin),the Hami-Dananhu mining area in the Turpan-Hami Basin,the Longdong coalfield(eastern Gansu Province),the Yilan and Hegang coalfields in eastern Heilongjiang Province,the Hunchun coalfield in Jilin Province,the southern Sichuan coalfield,and the Shuicheng coalfield in Guizhou Province.These favorable areas were recommended to be the CBM exploration and pilot development target areas in the near future.展开更多
A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spotsize converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymm...A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spotsize converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology. A 1550-1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved. The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°× 18.0°, respectively, resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.展开更多
We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI. The threshold current is 37mA and the output power at 100mA gain current is 3.5mW. When coupled to a sin...We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI. The threshold current is 37mA and the output power at 100mA gain current is 3.5mW. When coupled to a single-mode fiber with a coupling efficiency of 15% ,more than a 20dB extinction ratio is observed over the change of EAM bias from 0 to -2V. The 4.4nm continuous wavelength tuning range covers 6 channels on a 100GHz grid for WDM telecommunications.展开更多
The selection of a suitable navigation area is pivotal in aircraft scene matching guidance technology.This study addresses the challenge of identifying suitable reference image ranges for precise scene matching,which ...The selection of a suitable navigation area is pivotal in aircraft scene matching guidance technology.This study addresses the challenge of identifying suitable reference image ranges for precise scene matching,which is crucial for enhancing aircraft positioning accuracy.Traditional methods for image matchability analysis are often limited by their reliance on manual feature parameter design and threshold-based filtering,resulting in suboptimal accuracy and efficiency.This paper proposes a novel network architecture for selecting suitable navigation areas using image Matching Level Segmentation(MLSNet).The approach involves two key innovations:a method for generating segmentation labels that quantify matchability levels and an end-to-end network architecture for rapid and precise prediction of reference image matchability segmentation maps.The network includes two core modules:the saliency analysis module uses multi-layer convolutional networks to accurately detect image saliency features across various levels and scales;the multidimensional attention module utilizes attention mechanisms to focus on feature channels and spatial neighborhood scenes to assess the image’s matchability.Our method was rigorously tested on an extensive collection of remote sensing images,where it was benchmarked against a range of both traditional and cutting-edge deep learning methods.The findings indicate that MLSNet is significantly superior to traditional methods in accuracy and efficiency of matchability analysis,and is also relatively ahead of state-of-the-art deep learning models.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.12374459,61974138,and 92065106)the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302400)+1 种基金the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB0460000)the support from the Youth Innovation Promotion Association,Chinese Academy of Sciences(Grant Nos.2017156 and Y2021043)。
文摘Anti-phase domain defects easily form in the in-plane GaAs nanowires(NWs)grown on CMOS-compatiblegroup IV substrates,which makes it difficult to obtain GaAs NWs with a designed length and also leads to asignificant limitation in the growth of high-quality in-plane GaAs NW networks on such substrates.Here,wereport on the selective area growth of anti-phase domain-free in-plane GaAs NWs and NW networks on Ge(111)substrates.Detailed structural studies confirm that the GaAs NW grown using a large pattern period and GaAsNW networks grown by adding the Sb are both high-quality pure zinc-blende single crystals free of stackingfaults,twin defects,and anti-phase domain defects.Room-temperature photoluminescence measurements show asubstantial improvement in crystal quality and good consistency and uniformity of the GaAs NW networks.Ourwork provides useful insights into the controlled growth of high-quality anti-phase domain-defects-free in-planeIII-V NWs and NW networks.
文摘High performance 1 57μm spotsize converter monolithically integrated DFB is fabricated by the technique of self aligned selective area growth.The upper optical confinement layer and the butt coupled tapered thickness waveguide are regrown simultaneously,which not only offeres the separated optimization of the active region and the integrated spotsize converter,but also reduces the difficulty of the butt joint selective regrowth.The threshold current is as low as 4 4mA.The output power at 49mA is 10 1mW.The side mode suppression ratio (SMSR) is 33 2dB.The vertical and horizontal far field divergence angles are as small as 9° and 15° respectively,the 1dB misalignment tolerance are 3 6μm and 3 4μm.
基金Supported by the Key Program of the National Natural Science Foundation of China under Grant No 61334009the National High Technology Research and Development Program of China under Grant No 2014AA032604
文摘CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen （H2）/nitrogen （N2） and growth temperature of the selective area growth （SAG） method with metal organic chemical vapor deposition （MOCVD）. The SAG template is obtained by nanospherical-lens photolithography. It is found that increasing the flow rate of 1-12 will change the CaN crystal shape from pyramid to vertical rod, while increasing the growth temperature will reduce the diameters of GaN rods to nanometer scale. Finally the CaN nanorods with smooth lateral surface and relatively good quality are obtained under the condition that the H2：N2 ratio is 1：1 and the growth temperature is 1030℃. The good crystal quality and orientation of GaN nanorods are confirmed by high resolution transmission electron microscopy. The cathodoluminescence spectrum suggests that the crystal and optical quality is also improved with increasing the temperature.
基金Supported by the National High-Technology Research and Development Program of China under Grant Nos 2011AA010303and 2012AA012203the National Basic Research Program of China under Grant No 2011CB301702the National Natural Science Foundation of China under Grant Nos 61321063 and 6132010601
文摘A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13mA. The output power exceeds 10mW at 0V bias when the injection current of the distributed feedback laser is 100mA at 25℃. The side mode suppression ratio is over 50 dB. A 32Gb/s eye diagram is measured with a 3.SVpp nonreturn-to-zero pseudorandom modulation signal at -2.3 V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained.
基金Supported by the National Science and Technology Major Project of China under Grant No 2011ZX02708
文摘A high quality of GaAs crystal growth in nanoscale V-shape trenches on Si（O01） substrates is achieved by using the aspect-ratio trapping method. GaAs thin films are deposited via metal-organic chemical vapor deposition by using a two-step growth process. Threading disJocations arising from lattice mismatch are trapped by laterally confining sidewalls, and antiphase domains boundaries are completely restricted by V-groove trenches with Si { 111} facets. Material quality is confirmed by scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and high resolution X-ray diffraction. Low temperature photoluminescence （PL） measurement is used to analyze the thermal strain relaxation in GaAs layers. This approach shows great promise for the realization of high mobility devices or optoelectronie integrated circuits on Si substrates.
基金financially supported by the Natural Science Foundation of Jiangsu Province (Nos. BK20150158, BK2011436, and BM2014402)the China Postdoctoral Science Foundation (Nos. 2014M561623 and 2014M551559)+1 种基金Jiangsu Planned Projects for Postdoctoral Research Funds (No. 1401013B)the Fundamental Research Funds for Central Universities (Nos. JUSRP51517 and JUSRP11408)
文摘Monolithic white-light-emitting diodes(white LEDs) without phosphors are demonstrated using In GaN/GaN multiple quantum wells(MQWs) grown on GaN microrings formed by selective area epitaxy on SiO_2 mask patterns. The microring structure is composed of {1-101} semi-polar facets and a(0001) c-plane, attributed to favorable surface polarity and surface energy. The white light is realized by combining short and long wavelengths of electroluminescence emissions from In GaN /GaN MQWs on the {1-101} semi-polar facets and the(0001) c-plane,respectively. The change in the emission wavelengths from each microfacet is due to the In composition variations of the MQWs. These results suggest that white emission can possibly be obtained without using phosphors by combining emission light from microstructures.
基金Project supported by the National Natural Sciences Foundation of China(Nos.61376090,61306008)the National High Technology Program of China(No.2014AA032606)
文摘We report a selective area growth（SAG） method to define the p-GaN gate of AlGaN/GaN high electron mobility transistors（HEMTs） by metal-organic chemical vapor deposition.Compared with Schottky gate HEMTs,the SAG p-GaN gate HEMTs show more positive threshold voltage（Vth） and better gate control ability.The influence of Cp2Mg flux of SAG p-GaN gate on the AlGaN/GaN HEMTs has also been studied.With the increasing Cp2Mg from 0.16 μmol/min to 0.20 μmol/min,the Vth raises from-0.67 V to-0.37 V.The maximum transconductance of the SAG HEMT at a drain voltage of 10 V is 113.9 mS/mm while that value of the Schottky HEMT is 51.6 mS/mm.The SAG method paves a promising way for achieving p-GaN gate normally-off AlGaN/GaN HEMTs without dry etching damage.
基金The funding for this work was provided by the U.S.Department of Energy,Office of Nuclear Energy Contract DEAC07-051D14517The CNN work was partially supported by the National Science Foundation(award number 1552716).
文摘Selective area electron diffraction(SAED)patterns can provide valuable insight into the structure of a material.However,the manual identification of collected patterns can be a significant bottleneck in the overall phase classification workflow.In this work,we utilize the recent advances in computer vision and machine learning(ML)to automate the indexing of SAED patterns.The performance of six different ML algorithms is demonstrated using metallic plutonium-zirconium alloys.The most successful approach trained a neural network(NN)to make a classification of the phase and zone axis,and then utilized a second NN to synthesize multiple independent predictions of different tilts in a single sample to make an overall phase identification.The results demonstrate that automated SAED phase identification using ML is a viable route to accelerate materials characterization.
基金supported by the National High-Tech Research and Development Program of China(No.2015AA016902)the National Natural Science Foundation of China(Nos.61635010,61674136,and 61435002)
文摘InP-based photonics integration is becoming a competi- tive candidate for realizing optical modules with enhanced functionality at a reduced cost, especially in optical com- munication systems, since the proposal of wavelength division multiplexing （WDM）. In recent years, network traffic has raised demands for high capacity, high speed transmission systems.
基金financially supported by the National Natural Science Foundation of China(No.U21A2052)the Guangxi Science and Technology Program(No.2024AD47008)+1 种基金the Guangdong Basic and Applied Basic Research Foundation(Nos.2022A1515240060 and 2023A1515110100)the China Postdoctoral Science Foundation(No.2023M733642).
文摘Selected area grain boundary diffusion(SAGBD)has shown potential in enhancing the coercivity of thick Nd-Fe-B magnets while minimizing the consumption of heavy rare earths.However,the relationships among the SAGBD process,diffusion efficiency,and performance enhancement of the magnets have not yet been well established.Here,different grain boundary diffusion(GBD)approaches were proposed to treat the magnets with different thicknesses using a Tb-Cu alloy diffusion source.The SAGBD was approached with the source diffused from the twelve edge areas of the magnet and from eight vertices of the magnet were called SA-edge and Vertex GBD,respectively.Those diffusing from the edge areas of the four side planes and two c-planes were named SA-ab and SA-c diffusions,respectively.The GBDs from two easy magnetization planes(c-plane)and two parallel planes perpendicular to the c-plane were named c-plane and a-plane diffusions,respectively.It was found that the optimal GBD approaches for the magnets with thicknesses of 5,7.5,10,and 12.5 mm were c-plane,c-plane,SA-edge,and SA-ab diffusions,respectively.Specifically,the SA-ab diffusion shows the highest utilization efficiency of Tb in 12.5 mm-thick magnets,reaching a value of 405.5 kA m-1/wt.%,which is 2.9 and 3.8 times higher than c-plane and SA-c diffusions,respectively.In addition,similar magnetic properties were obtained by c-plane and a-plane diffusions,suggesting that Tb-Cu diffusion does not exhibit significant anisotropic behavior.The microstructure observations and micromagnetic simulations suggest that the reversed domains tend to nucleate at the edges and corners of the magnet.The Vertex diffusion can directly hinder the nucleation and propagation of reversed domains at the corners,but the SA-edge diffusion can effectively postpone their rapid propagation over the entire magnet.This study provides the guidelines for the future development of SAGBD for sintered Nd-Fe-B magnets.
基金supported by the National Natural Science Foundation of China(Grant Nos.61274039 and 51177175)the National Basic Research Program of China(Grant No.2011CB301903)+5 种基金the Ph.D.Programs Foundation of Ministry of Education of China(Grant No.20110171110021)the International Sci.&Tech.Collaboration Program of China(Grant No.2012DFG52260)the International Sci.&Tech.Collaboration Program of Guangdong Province,China(Grant No.2013B051000041)the Science and Technology Plan of Guangdong Province,China(Grant No.2013B010401013)the National High Technology Research and Development Program of China(Grant No.2014AA032606)the Opened Fund of the State Key Laboratory on Integrated Optoelectronics,China(Grant No.IOSKL2014KF17)
文摘Migration characterizations of Ga and In adatoms on the dielectric surface in selective metal organic vapor phase epitaxy （MOVPE） were investigated. In the typical MOVPE environment, the selectivity of growth is preserved for GaN, and the growth rate of GaN micro-pyramids is sensitive to the period of the patterned SiO2 mask. A surface migration induced model was adopted to figure out the effective migration length of Ga adatoms on the dielectric surface. Different from the growth of GaN, the selective area growth of InGaN on the patterned template would induce the deposition of InGaN polycrystalline particles on the patterned Si02 mask with a long period. It was demonstrated with a scanning electron microscope and energy dispersive spectroscopy that the In adatoms exhibit a shorter migration length on the dielectric surface.
基金supported by the National Natural Science Foundation of China(Grant Nos.61274039 and 61574173)the National Key Research and Development Program,China(Grant No.2016YFB0400105)+9 种基金the International Science and Technology Collaboration Program of Guangdong Province,China(Grant No.2013B051000041)the International Science and Technology Collaboration Program of Guangzhou City,China(Grant No.2016201604030055)the National High Technology Research and Development Program of China(Grant No.2014AA032606)Guangdong Provincial Natural Science Foundation,China(Grant No.2015A030312011)the Science&Technology Plan of Guangdong Province,China(Grant Nos.2015B090903062,2015B010132007,and2015B010129010)the Science and Technology Plan of Guangzhou,China(Grant No.201508010048)the Science and Technology Plan of Foshan,China(Grant No.201603130003)Guangdong–Hong Kong Joint Innovation Project of Guangdong Province,China(Grant No.2014B050505009)the Opened Fund of the State Key Laboratory on Integrated Optoelectronics(Grant No.IOSKL2014KF17)the Zhuhai Key Technology Laboratory of Wide Bandgap Semiconductor Power Electronics,Sun Yat-sen University(Grant No.20167612042080001)
文摘Ga N micro-pyramids with AlGaN capping layer are grown by selective metal–organic–vapor phase epitaxy（MOVPE）. Compared with bare Ga N micro-pyramids, AlGaN/Ga N micro-pyramids show wrinkling morphologies at the bottom of the structure. The formation of those special morphologies is associated with the spontaneously formed AlGaN polycrystalline particles on the dielectric mask, owing to the much higher bond energy of Al–N than that of Ga–N. When the sizes of the polycrystalline particles are larger than 50 nm, the uniform source supply behavior is disturbed, thereby leading to unsymmetrical surface morphology. Analysis reveals that the scale of surface wrinkling is related to the migration length of Ga adatoms along the AlGaN {1ī01} facet. The migration properties of Al and Ga further affect the distribution of Al composition along the sidewalls, characterized by the μ-PL measurement.
基金Supported by the Public Science and Technology Research Funds Projects of Ocean(Nos.201305043,201405010)the National Natural Science Foundation of China(No.41006075)
文摘Accordion-shaped traps are widely used in China to catch the Asian paddle crab C harybdis japonica but traps of conventional design often catch juvenile crabs. A new type of accordion-shaped trap with an escape vent(L×W=4.3 cm×3.0 cm) was designed and a comparative study between the newly designed and conventional traps was performed in the artifi cial reef area of Zhuwang, Laizhou Bay, China from June to August 2012. The mean catch per unit effort(CPUE) of undersized crabs was signifi cantly lower in the vented traps than in the conventional traps(paired t-test, n =30, P <0.001), while the CPUE of marketable crabs was signifi cantly higher in the vented traps(paired t-test, n =30, P <0.001). The mean size of crabs(carapace length) caught in the vented traps was signifi cantly larger than in conventional traps(paired t-test, n =29, P <0.001). The ratio of undersized crabs was 35.05%±2.57% in conventional traps and 12.53%±0.69% in vented traps(signifi cantly lower, paired t-test, n =29, P <0.001). Therefore, a 4.3 cm×3.0 cm escape vent was considered appropriate for C. japonica fi shing in the artifi cial reef area. This fi nding will assist the development of more sustainable and effi cient crab fi shing methods using accordion-shaped traps.
基金Projects(U0937604,50876116)supported by the National Natural Science Foundation of ChinaProjects(2010QZZD0107,2014zzts192)supported by the Fundamental Research Funds for the Central Universities of China
文摘To improve energy conversion efficiency, optimization of the working fluids in organic Rankine cycles(ORCs) was explored in the range of low-temperature heat sources. The concept of unit-heat-exchange-area(UHEA) net power, embodying the cost/performance ratio of an ORC system, was proposed as a new indicator to judge the suitability of ORC working fluids on a given condition. The heat exchange area was computed by an improved evaporator model without fixing the minimum temperature difference between working fluid and hot fluid, and the flow pattern transition during heat exchange was also taken into account. The maximum UHEA net powers obtained show that dry organic fluids are more suitable for ORCs than wet organic fluids to recover low-temperature heat. The organic fluid 1-butene is recommended if the inlet temperature of hot fluid is 353.15-363.15 K or443.15-453.15 K, heptane is more suitable at 373.15-423.15 K, and R245 ca is a good option at 483.15-503.15 K.
文摘The selected area electron diffraction （SAED） pattern of magnetic iron oxide core/gold shell nanoparticles has been studied. For the composite particles with mean size less than 10 nm, their SAED pattern is found to be different from either the pattern of pure Fe oxide nanoparticles or that of pure Au particles. Based on the fact that the ring diameters of these composite particles fit the characteristic relation for the fcc structure, the Au atoms on surfaces of the concerned particles are supposed to pack in a way more tightly than they usually do in pure Au nanoparticles. The driving force for this is the coherency strain which enables the shell material at the heterostructured interface to adapt the lattice parameters of the core.
基金supported by the Comprehensive Research Project of CNOOC Research Institute“Overseas Shale Oil and Gas Productivity Evaluation Technology and Method”(No.:YXKY-2016-ZY-03).
文摘Existing evaluation methods used for the development area selection for commingled production of tight gas and coalbed methane(CBM)are poorly universal and their parameters(e.g.reserves and reservoir physical properties)cannot reflect the production rate difference during commingled production of tight gas and CBM.In this paper,an integrated evaluation coefficient used for evaluating favorable commingled production areas of tight gas and CBM was defined so as to establish a universal quantitative evaluation index system.Then,by means of orthogonal design together with numerical simulation,the key parameters influencing the commingled production rate and their influence degree on the production rate were determined by taking the commingled production rate as the evaluation target.Finally,a new quantitative evaluation method for the development area selection for commingled production of tight gas and CBM was established.And the following research results were obtained.First,by virtue of the new quantitative evaluation method,the geological occurrence model of tight gas and CBM,the key evaluation parameter and the orthogonal experiment design are established,and the influence degree of evaluation parameters on production rate and the integrated evaluation coefficient of favorable commingled production area of tight gas and CBM are determined.Second,the quantitative evaluation results on the development areas of commingled production of tight gas and CBM in KNW Block based on 12 selected key parameters show that the southern KNW Block and the Well block KNW-37 in the north of KNW Block are the favorable areas for single production of tight gas,Well blocks KNW-10,KNW-33 and KNW-9 are the favorable areas for single production of CBM,and the central and southwestern areas are the favorable areas for the commingled production of tight gas and CBM.In conclusion,this new quantitative evaluation method is universal and can be used as reference for the development area selection for commingled production of tight gas and CBM.
基金work has been supported by the China Geological Survey Scientific Research Project 1212011220794the National Science and Technology Major Project 2011ZX 05033-002.
文摘At present,the increase in proved reserves and production of coalbed methane(CBM)in China depends mainly on several CBM bases in the southern Qinshui Basin and in the eastern margin of the Ordos Basin.Therefore,it is urgent to find new batches of exploration and development strategic replacement areas.For this purpose,we investigated the resources,reservoir properties,preservation conditions,and development conditions of CBM in China,and put forward eight general factors and four critical factors that can be used in establishing selection criteria of strategic replacement areas for affecting the CBM exploration and development in China.The eight general factors are resource abundance,coalbed thickness,gas content,original permeability,burial depth,hydrogeological conditions,coalbed depositional environment,and landforms,and the four critical factors include genetic type,stability type,later reservoir reformation,and damage degree of coal structure.Comparison shows that the low-rank coal area in the northwestern area,the northeastern medium-low rank coal area,and the southwestern medium-high rank and structurally-complex coal area are the major replacement areas for CBM following the northern area of China.Key factors affecting CBM enrichment in each of the three key areas,respectively,are:a)genetic type and stability of coal seams,b)genetic type and reconstruction of the reservoir by volcanic intrusion,and c)stability of coal seams and damage degree of coal structure.Based on these factors,a system for selection and evaluation of strategic replacement areas for CBM development was established.Fifteen blocks in the above three areas were evaluated by using multi-layered fuzzy mathematics,selecting eight favorable areas and seven relatively favorable areas that contain 1.8 trillion m^(3) of predicted CBM geological resources.The eight favorable areas include the Wucaiwan-Dajing coal exploration area in the Zhundong coalfield(eastern Junggar Basin),the Hami-Dananhu mining area in the Turpan-Hami Basin,the Longdong coalfield(eastern Gansu Province),the Yilan and Hegang coalfields in eastern Heilongjiang Province,the Hunchun coalfield in Jilin Province,the southern Sichuan coalfield,and the Shuicheng coalfield in Guizhou Province.These favorable areas were recommended to be the CBM exploration and pilot development target areas in the near future.
文摘A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spotsize converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology. A 1550-1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved. The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°× 18.0°, respectively, resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.
文摘We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI. The threshold current is 37mA and the output power at 100mA gain current is 3.5mW. When coupled to a single-mode fiber with a coupling efficiency of 15% ,more than a 20dB extinction ratio is observed over the change of EAM bias from 0 to -2V. The 4.4nm continuous wavelength tuning range covers 6 channels on a 100GHz grid for WDM telecommunications.
基金supported in part by the National Natural Science Foundation of China(No.42271446)in part by the Tianjin Key Laboratory of Rail Transit Navigation Positioning and Spatio-Temporary Big Data Technology,China(No.TKL2024B13)in part by the Science and Technology Program of Tianjin,China(No.24YFYSHZ00080)。
文摘The selection of a suitable navigation area is pivotal in aircraft scene matching guidance technology.This study addresses the challenge of identifying suitable reference image ranges for precise scene matching,which is crucial for enhancing aircraft positioning accuracy.Traditional methods for image matchability analysis are often limited by their reliance on manual feature parameter design and threshold-based filtering,resulting in suboptimal accuracy and efficiency.This paper proposes a novel network architecture for selecting suitable navigation areas using image Matching Level Segmentation(MLSNet).The approach involves two key innovations:a method for generating segmentation labels that quantify matchability levels and an end-to-end network architecture for rapid and precise prediction of reference image matchability segmentation maps.The network includes two core modules:the saliency analysis module uses multi-layer convolutional networks to accurately detect image saliency features across various levels and scales;the multidimensional attention module utilizes attention mechanisms to focus on feature channels and spatial neighborhood scenes to assess the image’s matchability.Our method was rigorously tested on an extensive collection of remote sensing images,where it was benchmarked against a range of both traditional and cutting-edge deep learning methods.The findings indicate that MLSNet is significantly superior to traditional methods in accuracy and efficiency of matchability analysis,and is also relatively ahead of state-of-the-art deep learning models.
