A stochastic model of chemical reaction-heat conduction-diffusion for a one-dimensional gaseous system under Dirichlet or zero-fluxes boundary conditions is proposed in this paper. Based on this model,we extend the th...A stochastic model of chemical reaction-heat conduction-diffusion for a one-dimensional gaseous system under Dirichlet or zero-fluxes boundary conditions is proposed in this paper. Based on this model,we extend the theory of the broadening exponent of critical fluctuations to cover the chemical reaction-heat conduction coupling systems as an asymptotic property of the corresponding Markovian master equation (ME),and establish a valid stochastic thermodynamics for such systems. As an illustration,the non-isothermal and inhomogeneous Schl-gl model is explicitly studied. Through an order analysis of the contributions from both the drift and diffusion to the evolution of the probability distribution in the corresponding Fokker-Planck equation(FPE) in the approach to bifurcation,we have identified the critical transition rule for the broadening exponent of the fluctuations due to the coupling between chemical reaction and heat conduction. It turns out that the dissipation induced by the critical fluctuations reaches a deterministic level,leading to a thermodynamic effect on the nonequilibrium physico-chemical processes.展开更多
Hot carrier effect（HCE） is studied on annular NMOS and two-edged NMOS such as H-shape gate NMOS, T-shape gate NMOS and common two-edged NMOS.Based on the chemical reaction equation of HCE degradation and a geometry ...Hot carrier effect（HCE） is studied on annular NMOS and two-edged NMOS such as H-shape gate NMOS, T-shape gate NMOS and common two-edged NMOS.Based on the chemical reaction equation of HCE degradation and a geometry dependent reaction diffusion equation,a HCE degradation model for annular NMOS and two-edged NMOS is proposed.According to this model,we conclude that the time exponent of the threshold voltage degradation depends on the configuration of the gate,and annular NMOS has more serious HCE degradation than two-edged NMOS.The design,fabrication and HCE experiments of these NMOS in a 0.5-μm PD SOI process verify the correctness of the conclusion.展开更多
基金supported by the National Natural Science Foundation of China (20673074 & 20973119)
文摘A stochastic model of chemical reaction-heat conduction-diffusion for a one-dimensional gaseous system under Dirichlet or zero-fluxes boundary conditions is proposed in this paper. Based on this model,we extend the theory of the broadening exponent of critical fluctuations to cover the chemical reaction-heat conduction coupling systems as an asymptotic property of the corresponding Markovian master equation (ME),and establish a valid stochastic thermodynamics for such systems. As an illustration,the non-isothermal and inhomogeneous Schl-gl model is explicitly studied. Through an order analysis of the contributions from both the drift and diffusion to the evolution of the probability distribution in the corresponding Fokker-Planck equation(FPE) in the approach to bifurcation,we have identified the critical transition rule for the broadening exponent of the fluctuations due to the coupling between chemical reaction and heat conduction. It turns out that the dissipation induced by the critical fluctuations reaches a deterministic level,leading to a thermodynamic effect on the nonequilibrium physico-chemical processes.
基金Project supported by the Key Program of the National Natural Science Foundation of China(No.60836004)the Ministry of Education Creative Team Research Project,China.
文摘Hot carrier effect（HCE） is studied on annular NMOS and two-edged NMOS such as H-shape gate NMOS, T-shape gate NMOS and common two-edged NMOS.Based on the chemical reaction equation of HCE degradation and a geometry dependent reaction diffusion equation,a HCE degradation model for annular NMOS and two-edged NMOS is proposed.According to this model,we conclude that the time exponent of the threshold voltage degradation depends on the configuration of the gate,and annular NMOS has more serious HCE degradation than two-edged NMOS.The design,fabrication and HCE experiments of these NMOS in a 0.5-μm PD SOI process verify the correctness of the conclusion.
