We report on the room-temperature cascade laser （QCL） at λ -4.7μm. cw operation of a surface grating Both grating design and material distributed feedback （DFB） quantum optimization are used to decrease the thre...We report on the room-temperature cascade laser （QCL） at λ -4.7μm. cw operation of a surface grating Both grating design and material distributed feedback （DFB） quantum optimization are used to decrease the threshold current density and to increase the output power. For a high-reflectivity-coated 13-μm-wide and 4- mm-long laser, high wall-plug efficiency of 6% is obtained at 20℃ from a single facet producing over I W of ew output power. The threshold current density of DFB QCL is as low as 1.13kA/cm^2 at 10℃ and 1.34kA/cm2 at 30℃ in cw mode. Stable single-mode emission with a side-mode suppression ratio of about 30 dB is observed in tile working temperature range of 20-50℃.展开更多
Multiple exciton generation （MEG） dynamics in colloidal PbS quantum dots （QDs） characterized with an im- proved transient grating （TG） technique will be reported. Only one peak soon after optical absorption and ...Multiple exciton generation （MEG） dynamics in colloidal PbS quantum dots （QDs） characterized with an im- proved transient grating （TG） technique will be reported. Only one peak soon after optical absorption and a fast decay within 1 ps can be observed in the TG kinetics when the photon energy of the pump light hv is smaller than 2.7Eg （Eg： band gap between LUMO and HOMO in the QDs）, which corresponds to hot carrier cooling. When hv is greater than 2.7Eg, however, after the initial peak, the TG signal decreases first and soon increases, and then a new peak appears at about 2 to 3 ps. The initial peak and the new peak correspond to hot carriers at the higher excited state and MEG at the lowest excited state, respectively. By proposing a theoretical model, we can calculate the hot carrier cooling time constant and MEG occurrence time constant quantitatively. When MEG does not happen for hv smaller than 2.7Eg, hot carrier cools with a time con- stant of 400 fs. When MEG occurs for hv larger than 2.7Eg, hot carrier cools with a time constant as small as 200 fs, while MEG occurs with a time constant of 600 fs. The detailed hot carrier cooling and MEG occurrence dynamics characterized in this work would shed light on the further understanding of MEG mechanism of various type of semiconductor QDs.展开更多
基金Supported by the National Basic Research Program of China under Grant Nos 2013CB632801 and 2013CB632803the National Natural Science Foundation of China under Grant Nos 61435014,61306058 and 61274094the Beijing Natural Science Foundation under Grant No 4144086
文摘We report on the room-temperature cascade laser （QCL） at λ -4.7μm. cw operation of a surface grating Both grating design and material distributed feedback （DFB） quantum optimization are used to decrease the threshold current density and to increase the output power. For a high-reflectivity-coated 13-μm-wide and 4- mm-long laser, high wall-plug efficiency of 6% is obtained at 20℃ from a single facet producing over I W of ew output power. The threshold current density of DFB QCL is as low as 1.13kA/cm^2 at 10℃ and 1.34kA/cm2 at 30℃ in cw mode. Stable single-mode emission with a side-mode suppression ratio of about 30 dB is observed in tile working temperature range of 20-50℃.
基金supported by MEXT KAKENHI Grant no. 26286013the PRESTO program Photoenergy conversion systems and materials for the next generation solar cells,Japan Science and Technology Agency (JST)
文摘Multiple exciton generation （MEG） dynamics in colloidal PbS quantum dots （QDs） characterized with an im- proved transient grating （TG） technique will be reported. Only one peak soon after optical absorption and a fast decay within 1 ps can be observed in the TG kinetics when the photon energy of the pump light hv is smaller than 2.7Eg （Eg： band gap between LUMO and HOMO in the QDs）, which corresponds to hot carrier cooling. When hv is greater than 2.7Eg, however, after the initial peak, the TG signal decreases first and soon increases, and then a new peak appears at about 2 to 3 ps. The initial peak and the new peak correspond to hot carriers at the higher excited state and MEG at the lowest excited state, respectively. By proposing a theoretical model, we can calculate the hot carrier cooling time constant and MEG occurrence time constant quantitatively. When MEG does not happen for hv smaller than 2.7Eg, hot carrier cools with a time con- stant of 400 fs. When MEG occurs for hv larger than 2.7Eg, hot carrier cools with a time constant as small as 200 fs, while MEG occurs with a time constant of 600 fs. The detailed hot carrier cooling and MEG occurrence dynamics characterized in this work would shed light on the further understanding of MEG mechanism of various type of semiconductor QDs.
