This paper＂ describes and analyses the impact of the Ti layer, which is embedded between the insulator and top electrode, on the programming characteristic of the A1-HfO2-AI antifuse. The programming voltage of the a...This paper＂ describes and analyses the impact of the Ti layer, which is embedded between the insulator and top electrode, on the programming characteristic of the A1-HfO2-AI antifuse. The programming voltage of the antiiikse with 120 A HfO2 is properly reduced from 5.5 to 4.6 V with an embedded Ti layer. Low on-state resistance （-19Ω） and low programming voltage （4.6 V） is demonstrated in the embedded Ti antifhse with 120 A H fO2 while keeping sufficient off-state reliability. The antifuse embedded with a Ti layer between the insulator and top electrode has been developed and has potential in field programmable devices.展开更多
A 1 kbit antifuse one time programmable(OTP) memory IP,which is one of the non-volatile memory IPs,was designed and used for power management integrated circuits(ICs).A conventional antifuse OTP cell using a single po...A 1 kbit antifuse one time programmable(OTP) memory IP,which is one of the non-volatile memory IPs,was designed and used for power management integrated circuits(ICs).A conventional antifuse OTP cell using a single positive program voltage(VPP) has a problem when applying a higher voltage than the breakdown voltage of the thin gate oxides and at the same time,securing the reliability of medium voltage(VM) devices that are thick gate transistors.A new antifuse OTP cell using a dual program voltage was proposed to prevent the possibility for failures in a qualification test or the yield drop.For the newly proposed cell,a stable sensing is secured from the post-program resistances of several ten thousand ohms or below due to the voltage higher than the hard breakdown voltage applied to the terminals of the antifuse.The layout size of the designed 1 kbit antifuse OTP memory IP with Dongbu HiTek's 0.18 μm Bipolar-CMOS-DMOS(BCD) process is 567.9 μm×205.135 μm and the post-program resistance of an antifuse is predicted to be several ten thousand ohms.展开更多
This paper presents a novel modified inter- active honey bee mating optimization （IHBMO） base fuzzy stochastic long-term approach for determining optimum location and size of distributed energy resources （DERs）. T...This paper presents a novel modified inter- active honey bee mating optimization （IHBMO） base fuzzy stochastic long-term approach for determining optimum location and size of distributed energy resources （DERs）. The Monte Carlo simulation method is used to model the uncertainties associated with long-term load forecasting, A proper combination of several objectives is considered in the objective function. Reduction of loss and power purchased from the electricity market, loss reduc- tion in peak load level and reduction in voltage deviation are considered simultaneously as the objective functions. First, these objectives are fuzzified and designed to be comparable with each other. Then, they are introduced into an IHBMO algorithm in order to obtain the solution which maximizes the value of integrated objective function. The output power orDERs is scheduled for each load level. An enhanced economic model is also proposed to justify investment on DER. An IEEE 30-bus radial distribution test system is used to illustrate the effectiveness of the proposed method.展开更多
文摘This paper＂ describes and analyses the impact of the Ti layer, which is embedded between the insulator and top electrode, on the programming characteristic of the A1-HfO2-AI antifuse. The programming voltage of the antiiikse with 120 A HfO2 is properly reduced from 5.5 to 4.6 V with an embedded Ti layer. Low on-state resistance （-19Ω） and low programming voltage （4.6 V） is demonstrated in the embedded Ti antifhse with 120 A H fO2 while keeping sufficient off-state reliability. The antifuse embedded with a Ti layer between the insulator and top electrode has been developed and has potential in field programmable devices.
基金Work supported by the Second Stage of Brain Korea 21 Projectssupported by Changwon National University in 2009-2010
文摘A 1 kbit antifuse one time programmable(OTP) memory IP,which is one of the non-volatile memory IPs,was designed and used for power management integrated circuits(ICs).A conventional antifuse OTP cell using a single positive program voltage(VPP) has a problem when applying a higher voltage than the breakdown voltage of the thin gate oxides and at the same time,securing the reliability of medium voltage(VM) devices that are thick gate transistors.A new antifuse OTP cell using a dual program voltage was proposed to prevent the possibility for failures in a qualification test or the yield drop.For the newly proposed cell,a stable sensing is secured from the post-program resistances of several ten thousand ohms or below due to the voltage higher than the hard breakdown voltage applied to the terminals of the antifuse.The layout size of the designed 1 kbit antifuse OTP memory IP with Dongbu HiTek's 0.18 μm Bipolar-CMOS-DMOS(BCD) process is 567.9 μm×205.135 μm and the post-program resistance of an antifuse is predicted to be several ten thousand ohms.
文摘This paper presents a novel modified inter- active honey bee mating optimization （IHBMO） base fuzzy stochastic long-term approach for determining optimum location and size of distributed energy resources （DERs）. The Monte Carlo simulation method is used to model the uncertainties associated with long-term load forecasting, A proper combination of several objectives is considered in the objective function. Reduction of loss and power purchased from the electricity market, loss reduc- tion in peak load level and reduction in voltage deviation are considered simultaneously as the objective functions. First, these objectives are fuzzified and designed to be comparable with each other. Then, they are introduced into an IHBMO algorithm in order to obtain the solution which maximizes the value of integrated objective function. The output power orDERs is scheduled for each load level. An enhanced economic model is also proposed to justify investment on DER. An IEEE 30-bus radial distribution test system is used to illustrate the effectiveness of the proposed method.
