Regarding the rapid compensation of the influence of the Earth＇ s disturbing gravity field upon trajectory calculation,the key point lies in how to derive the analytical solutions to the partial derivatives of the st...Regarding the rapid compensation of the influence of the Earth＇ s disturbing gravity field upon trajectory calculation,the key point lies in how to derive the analytical solutions to the partial derivatives of the state of burnout point with respect to the launch data.In view of this,this paper mainly expounds on two issues：one is based on the approximate analytical solution to the motion equation for the vacuum flight section of a long-range rocket,deriving the analytical solutions to the partial derivatives of the state of burnout point with respect to the changing rate of the finalstage pitch program;the other is based on the initial positioning and orientation error propagation mechanism,proposing the analytical calculation formula for the partial derivatives of the state of burnout point with respect to the launch azimuth.The calculation results of correction data are simulated and verified under different circumstances.The simulation results are as follows：（1） the accuracy of approximation between the analytical solutions and the results attained via the difference method is higher than 90%,and the ratio of calculation time between them is lower than 0.2%,thus demonstrating the accuracy of calculation of data corrections and advantages in calculation speed;（2） after the analytical solutions are compensated,the longitudinal landing deviation of the rocket is less than 20 m and the lateral landing deviation of the rocket is less than 10 m,demonstrating that the corrected data can meet the requirements for the hit accuracy of a long-range rocket.展开更多
Dopants and defects are important in semiconductor and magnetic devices. Strategies for controlling doping and defects have been the focus of semiconductor physics research during the past decades and remain critical ...Dopants and defects are important in semiconductor and magnetic devices. Strategies for controlling doping and defects have been the focus of semiconductor physics research during the past decades and remain critical even today. Co-doping is a promising strategy that can be used for effectively tuning the dopant populations, electronic properties, and magnetic properties. It can enhance the solubility of dopants and improve the stability of desired defects. During the past 20 years, significant experimental and theoretical efforts have been devoted to studying the characteristics of co-doping. In this article, we first review the historical development of co-doping. Then, we review a variety of research performed on co-doping, based on the compensating nature of co-dopants. Finally, we review the effects of contamination and surfactants that can explain the general mechanisms of co-doping.展开更多
文摘Regarding the rapid compensation of the influence of the Earth＇ s disturbing gravity field upon trajectory calculation,the key point lies in how to derive the analytical solutions to the partial derivatives of the state of burnout point with respect to the launch data.In view of this,this paper mainly expounds on two issues：one is based on the approximate analytical solution to the motion equation for the vacuum flight section of a long-range rocket,deriving the analytical solutions to the partial derivatives of the state of burnout point with respect to the changing rate of the finalstage pitch program;the other is based on the initial positioning and orientation error propagation mechanism,proposing the analytical calculation formula for the partial derivatives of the state of burnout point with respect to the launch azimuth.The calculation results of correction data are simulated and verified under different circumstances.The simulation results are as follows：（1） the accuracy of approximation between the analytical solutions and the results attained via the difference method is higher than 90%,and the ratio of calculation time between them is lower than 0.2%,thus demonstrating the accuracy of calculation of data corrections and advantages in calculation speed;（2） after the analytical solutions are compensated,the longitudinal landing deviation of the rocket is less than 20 m and the lateral landing deviation of the rocket is less than 10 m,demonstrating that the corrected data can meet the requirements for the hit accuracy of a long-range rocket.
文摘Dopants and defects are important in semiconductor and magnetic devices. Strategies for controlling doping and defects have been the focus of semiconductor physics research during the past decades and remain critical even today. Co-doping is a promising strategy that can be used for effectively tuning the dopant populations, electronic properties, and magnetic properties. It can enhance the solubility of dopants and improve the stability of desired defects. During the past 20 years, significant experimental and theoretical efforts have been devoted to studying the characteristics of co-doping. In this article, we first review the historical development of co-doping. Then, we review a variety of research performed on co-doping, based on the compensating nature of co-dopants. Finally, we review the effects of contamination and surfactants that can explain the general mechanisms of co-doping.
