The modified normal form approach presented by ZHANG Wei-yi, K Huseyin and CHEN Yu-shu is further extended and a different procedure is introduced which lends itself readily to symbolic calculations, like MAPLE. This ...The modified normal form approach presented by ZHANG Wei-yi, K Huseyin and CHEN Yu-shu is further extended and a different procedure is introduced which lends itself readily to symbolic calculations, like MAPLE. This provides a number of significant advantages over the previous approach, and facilitates the associated calculations. To illustrate the new approach, three examples are presented.展开更多
The fundamental objective of this paper is to study the effectiveness of magnetic field and gravity on an isotropic homogeneous thermoelastic structure based on four theories of generalized thermoelasticity.In another...The fundamental objective of this paper is to study the effectiveness of magnetic field and gravity on an isotropic homogeneous thermoelastic structure based on four theories of generalized thermoelasticity.In another meaning,the models of coupled dynamic theory(CDT),Lord-Shulman(LS),Green-Lindsay(GL)as well as Green-Naghdi(GN II)will be taken in the consideration.Then,applying the harmonic method(normal mode technique),the solution of the governing equations and the expressions for the components of the displacement,temperature and(Mechanical and Maxwell’s)stresses is taken into account and calculated numerically.The impacts of the gravity and magnetic field are illustrated graphically which are pronounced on the different physical quantities.Finally,the results of some research that others have previously obtained may be found some or all of them as special cases from this study.展开更多
The exponential dependence of the potential barrier height Фc on the biased voltages of the inorganic/organic static induction transistor （SIT/OSIT） through a normalized approach in the low-current regime is presen...The exponential dependence of the potential barrier height Фc on the biased voltages of the inorganic/organic static induction transistor （SIT/OSIT） through a normalized approach in the low-current regime is presented. It shows a more accurate description than the linear expression of the potential barrier height. Through the verification of the numerical calculated and experimental results, the exponential dependence of Фc on the applied biases can be used to derive the I-V characteristics. For both SIT and OSIT, the calculated results, using the presented relationship, are agreeable with the experimental results. Compared to the previous linear relationship, the exponential description Of Фc can contribute effectively to reduce the error between the theoretical and experimental results of the I-V characteristics.展开更多
文摘The modified normal form approach presented by ZHANG Wei-yi, K Huseyin and CHEN Yu-shu is further extended and a different procedure is introduced which lends itself readily to symbolic calculations, like MAPLE. This provides a number of significant advantages over the previous approach, and facilitates the associated calculations. To illustrate the new approach, three examples are presented.
文摘The fundamental objective of this paper is to study the effectiveness of magnetic field and gravity on an isotropic homogeneous thermoelastic structure based on four theories of generalized thermoelasticity.In another meaning,the models of coupled dynamic theory(CDT),Lord-Shulman(LS),Green-Lindsay(GL)as well as Green-Naghdi(GN II)will be taken in the consideration.Then,applying the harmonic method(normal mode technique),the solution of the governing equations and the expressions for the components of the displacement,temperature and(Mechanical and Maxwell’s)stresses is taken into account and calculated numerically.The impacts of the gravity and magnetic field are illustrated graphically which are pronounced on the different physical quantities.Finally,the results of some research that others have previously obtained may be found some or all of them as special cases from this study.
文摘The exponential dependence of the potential barrier height Фc on the biased voltages of the inorganic/organic static induction transistor （SIT/OSIT） through a normalized approach in the low-current regime is presented. It shows a more accurate description than the linear expression of the potential barrier height. Through the verification of the numerical calculated and experimental results, the exponential dependence of Фc on the applied biases can be used to derive the I-V characteristics. For both SIT and OSIT, the calculated results, using the presented relationship, are agreeable with the experimental results. Compared to the previous linear relationship, the exponential description Of Фc can contribute effectively to reduce the error between the theoretical and experimental results of the I-V characteristics.
