In this article, the authors deal with the Cauchy problem of a nonlinear parabolic equation with variable density and absorption. By using energy methods, the authors prove that the interfaces can disappear in finite ...In this article, the authors deal with the Cauchy problem of a nonlinear parabolic equation with variable density and absorption. By using energy methods, the authors prove that the interfaces can disappear in finite time under some assumptions on the density functions.展开更多
The dependences of Fermi-level pinning on interface state densities for the metal-dielectric, ploycrystalline silicon-dielectric, and metal silicide-dielectric interfaces are investigated by calculating their effectiv...The dependences of Fermi-level pinning on interface state densities for the metal-dielectric, ploycrystalline silicon-dielectric, and metal silicide-dielectric interfaces are investigated by calculating their effective work functions and their pinning factors. The Fermi-level pinning factors and effective work functions of the metal-dielectric interface are observed to be more susceptible to the increasing interface state densities, differing significantly from that of the ploycrystalline silicon-dielectric interface and the metal silicide-dielectric interface. The calculation results indicate that metal silicide gates with high-temperature resistance and low resistivity are a more promising choice for the design of gate materials in metal-oxide semiconductor（MOS） technology.展开更多
The polar interface optical （IO） and surface optical （SO） phonon modes and the corresponding Froehlich electron phonon-interaction Hamiltonian in a freestanding multi-layer wurtzite cylindrical quantum wire （QWR...The polar interface optical （IO） and surface optical （SO） phonon modes and the corresponding Froehlich electron phonon-interaction Hamiltonian in a freestanding multi-layer wurtzite cylindrical quantum wire （QWR） are derived and studied by employing the transfer matrix method in the dielectric continuum approximation and Loudon＇s uniaxial crystal model. A numerical calculation of a freestanding wurtzite GaN/AlN QWR is performed. The results reveal that for a relatively large azimuthal quantum number m or wave-number kz in the free z-direction, there exist two branches of IO phonon modes localized at the interface, and only one branch of SO mode localized at the surface in the system. The degenerating behaviours of the IO and SO phonon modes in the wurtzite QWR have also been clearly observed for a small kz or m. The limiting frequency properties of the IO and SO modes for large kz and m have been explained reasonably from the mathematical and physical viewpoints. The calculations of electron-phonon coupling functions show that the high-frequency IO phonon branch and SO mode play a more important role in the electron phonon interaction.展开更多
Powder mixture of pure A1 and oxidized SiC was consolidated into 10% （mass fraction） SiCp/AI composites at 523 K by equal channel angular pressing and torsion （ECAP-T）. The interfacial bonding of the composites wa...Powder mixture of pure A1 and oxidized SiC was consolidated into 10% （mass fraction） SiCp/AI composites at 523 K by equal channel angular pressing and torsion （ECAP-T）. The interfacial bonding of the composites was characterized by transmission electron microscopy （TEM） and high resolution transmission electron microscopy （HRTEM）. The selected area electron diffraction （SAED） for the interface was investigated. The elements at the interface were scanned by energy dispersive spectroscopy （EDS） and the EDS mapping was also obtained. X-ray diffraction （XRD） analysis was carried out for the composites fabricated by 1 pass, 2 passes and 4 passes ECAP-T. According to the XRD analysis, the influences of ECAP-T pass on the Bragg angle and interplanar spacing for AI crystalline planes were studied. The results show that after ECAP-T, the interface between A1 and SiC within the composites is a belt of amorphous SiO2 containing a trace of A1, Si and C which diffused from the matrix and the reinforcement. With the growing ECAP-T pass, the Bragg angle decreases and interplanar spacing increases for A1 crystalline planes, due to the accumulated lattice strain. The increasing lattice strain of A1 grains also boosts the density of the dislocation within A1 grains.展开更多
In this paper molecular dynamics simulations are performed to study the accumulation behaviour of N2 and H2 at water/graphite interface under ambient temperature and pressure. It finds that both N2 and H2 molecules ca...In this paper molecular dynamics simulations are performed to study the accumulation behaviour of N2 and H2 at water/graphite interface under ambient temperature and pressure. It finds that both N2 and H2 molecules can accumulate at the interface and form one of two states according to the ratio of gas molecules number to square of graphite surface from our simulation results： gas films （pancake-like） for a larger ratio and nanobubbles for a smaller ratio. In addition, we discuss the stabilities of nanobubbles at different environment temperatures. Surprisingly, it is found that the density of both kinds of gas states can be greatly increased, even comparable with that of the liquid N2 and liquid H2. The present results are expected to be helpful for the understanding of the stable existence of gas film （pancake-like） and nanobubbles.展开更多
By inserting a thin highly doped crystalline silicon layer between the base region and amorphous silicon layer in an interdigitated back-contact （IBC） silicon solar cell, a new passivation layer is investigated. The...By inserting a thin highly doped crystalline silicon layer between the base region and amorphous silicon layer in an interdigitated back-contact （IBC） silicon solar cell, a new passivation layer is investigated. The passivation layer performance is characterized by numerical simulations. Moreover, the dependence of the output parameters of the solar cell on the additional layer parameters （doping concentration and thickness） is studied. By optimizing the additional passivation layer in terms of doping concentration and thickness, the power conversion efficiency could be improved by a factor of 2.5%, open circuit voltage is increased by 30 mV and the fill factor of the solar cell by 7.4%. The performance enhancement is achieved due to the decrease of recombination rate, a decrease in solar cell resistivity and improvement of field effect passivation at heterojunction interface. The above-mentioned results are compared with reported results of the same conventional interdigitated back-contact silicon solar cell structure. Furthermore, the effect of a-Si：H/c-Si interface defect density on IBC silicon solar cell parameters with a new passivation layer is studied. The additional passivation layer also reduces the sensitivity of output parameter of solar cell to interface defect density.展开更多
Conventionally,interface effects between polymers and fillers are essential for determining the breakdown strength and energy storage density of polymer-based dielectric composites.In this study,we found that interfac...Conventionally,interface effects between polymers and fillers are essential for determining the breakdown strength and energy storage density of polymer-based dielectric composites.In this study,we found that interface effects between different fillers have similar behavior.BN and Ba TiO3 fiber composite fillers with three different interface bonding strengths were successfully achieved by controlling composite processes(BT-fiber/BN<BT-fiber@BN<BT-fiber&BN),and introduced into a polyimide(PI)matrix to form composite films.Considerably enhanced breakdown strength and energy storage density were obtained in BT-fiber&BN/PI composites owing to strong interface bonding,compared to other two composite fillers,which are well supported by the data from the finite element simulation.Specifically,PI composites with only 3 wt%BT-fiber&BN possess an optimized energy storage density of approximately 4.25 J/cm^(3)at 4343 k V/cm.These results provide an effective way for adjusting and improving the energy storage properties of polymer-based composites.展开更多
Pd-Ni coating shows good corrosion resistance in strong corrosion environments.However,in complex aggressiveenvironments,the performance of the coatings is limited and further improvement is necessary.The effects of t...Pd-Ni coating shows good corrosion resistance in strong corrosion environments.However,in complex aggressiveenvironments,the performance of the coatings is limited and further improvement is necessary.The effects of the applied platingcurrent density on the composition,structure and properties of Pd-Ni coatings were studied.By changing the current density in thesame bath,multi-layer Pd-Ni coatings were prepared on316L stainless steel.Scanning electronic microscopy,weight loss tests,adhesion strength,porosity and electrochemical methods were used to study the corrosion resistance of the films prepared bydifferent coating methods.Compared with the single layer Pd-Ni coating,the multi-layer coatings showed higher microhardness,lower internal stress,lower porosity and higher adhesive strength.The multi-layer Pd-Ni coating showed obviously better corrosionresistance in hot sulfuric acid solution containing Cl-.展开更多
BP( Back Propagation) neural network and PSO( Particle Swarm Optimization) are two main heuristic optimization methods,and are usually used as nonlinear inversion methods in geophysics. The authors applied BP neural n...BP( Back Propagation) neural network and PSO( Particle Swarm Optimization) are two main heuristic optimization methods,and are usually used as nonlinear inversion methods in geophysics. The authors applied BP neural network and BP neural network optimized with PSO into the inversion of 3D density interface respectively,and a comparison was drawn to demonstrate the inversion results. To start with,a synthetic density interface model was created and we used the proceeding inversion methods to test their effectiveness. And then two methods were applied into the inversion of the depth of Moho interface. According to the results,it is clear to find that the application effect of PSO-BP is better than that of BP network. The BP network structures used in both synthetic and field data are consistent in order to obtain preferable inversion results. The applications in synthetic and field tests demonstrate that PSO-BP is a fast and effective method in the inversion of 3D density interface and the optimization effect is evident compared with BP neural network merely,and thus,this method has practical value.展开更多
For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To...For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance （Rs） on high-frequency （SMHz） capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the CHF-CLF capacitance and the conductance method are 2 ×1012 e V-1 cm-2 and 0.94 × 1012 eV-1 cm-2, respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.展开更多
The 0.9Pb（Sc0.5Ta0.5）O3-0.1PbTiO3/0.55Pb（Sc0.5Ta0.5）O3-0.45 PbTiO3 multilayer thin films（（PSTT10/45）n, n = 1-6, 10） are deposited on SiO2/Si（100） substrates by radio frequency magnetron sputtering technique ...The 0.9Pb（Sc0.5Ta0.5）O3-0.1PbTiO3/0.55Pb（Sc0.5Ta0.5）O3-0.45 PbTiO3 multilayer thin films（（PSTT10/45）n, n = 1-6, 10） are deposited on SiO2/Si（100） substrates by radio frequency magnetron sputtering technique with La Ni O3 buffer and electrode layer, and the films are subsequently annealed by a two-step rapid thermal approach. It is found that the interfacial density of the film has an important influence on the electric property of the film. The electric property of the film increases and reaches its critical point with the increase of interface density, and then decreases with the further increase of the interface density. With an interfacial density of 16 μm-1, the film shows an optimized dielectric property（high dielectric constant, εr = 765, lowest dielectric loss, tan δ = 0.041, at 1 k Hz） and ferroelectric property（highest remnant polarization,2Pr = 36.9 μC/cm2, low coercive field, 2Ec = 71.9 k V/cm）. The possible reason for the electric behavior of the film is the competition of the interface stress with the interface defect.展开更多
The elasto-plastic finite element analyses for an interface crack in dissimilar material, based on the crack energy density (CED) concept, are investigated in mode I loading condition. It is confirmed that the values ...The elasto-plastic finite element analyses for an interface crack in dissimilar material, based on the crack energy density (CED) concept, are investigated in mode I loading condition. It is confirmed that the values of CED almost remain stable when the notch radius rho is sufficiently small, both in elastic and elasto-plastic case. Numerical results for both elastic and elasto-plastic cases show that under the mode I loading condition, when the crack propagates to the more stiff material with a small angle, the total CED will become larger than that along the interface. If the clack heads into the more compliant material, the CED will become less than that along the interface.展开更多
High-purity germanium(HPGe)detectors,which are used for direct dark matter detection,have the advantages of a low threshold and excellent energy resolution.The surface passivation of HPGe has become crucial for achiev...High-purity germanium(HPGe)detectors,which are used for direct dark matter detection,have the advantages of a low threshold and excellent energy resolution.The surface passivation of HPGe has become crucial for achieving an extremely low energy threshold.In this study,first-principles simulations,passivation film preparation,and metal oxide semiconductor(MOS)capacitor characterization were combined to study surface passivation.Theoretical calculations of the energy band structure of the -H,-OH,and -NH_(2) passivation groups on the surface of Ge were performed,and the interface state density and potential with five different passivation groups with N/O atomic ratios were accurately analyzed to obtain a stable surface state.Based on the theoretical calculation results,the surface passivation layers of the Ge_(2)ON_(2) film were prepared via magnetron sputtering in accordance with the optimum atomic ratio structure.The microstructure,C-V,and I-V electrical properties of the layers,and the passivation effect of the Al/Ge_(2)ON_(2)/Ge MOS were characterized to test the interface state density.The mean interface state density obtained by the Terman method was 8.4×10^(11) cm^(-2) eV^(-1).The processing of germanium oxynitrogen passivation films is expected to be used in direct dark matter detection of the HPGe detector surface passivation technology to reduce the detector leakage currents.展开更多
ZnO-based thin film transistors(TFTs)with high bias stability are challenging due to the intrinsic defects and overhigh interface trap density.In this work,we fabricated Hf-doped ZnO films with different cycle ratio o...ZnO-based thin film transistors(TFTs)with high bias stability are challenging due to the intrinsic defects and overhigh interface trap density.In this work,we fabricated Hf-doped ZnO films with different cycle ratio of Zn/Hf via atomic layer deposition and subsequent annealing treatment.The results show that the cycle ratio of Zn/Hf is optimized to be 10:1,and the corresponding atomic ratio is 2.24%.The threshold voltage and subthreshold swing of the devices are improved as the annealing temperature increases,owning to the decrease of the oxygen vacancies and interface trap density.Furthermore,we developed Hf-doped ZnO TFT with high bias stability by introducing HfO_(2)intermediate layer between the active layer and SiO_(2)dielectric layer,and the shift of threshold voltage is as low as-0.273 V,showing high bias stability.Also,the device has the high field-effective mobility of 52.4 cm^(2)/Vs,low subthreshold swing of 0.68 V/dec and high Ion/Ioff of 3.6×10^(8).The results indicate a promising fabrication method for highperformance ZnO-based TFTs,which may be applied in logic circuits,radio frequency identification and so on.展开更多
Employing density functional theory, we study the tensile and fracture processes of the phase interfaces in Mg–Li binary alloy. The simulation presents the strain–stress relationships, the ideal tensile strengths, a...Employing density functional theory, we study the tensile and fracture processes of the phase interfaces in Mg–Li binary alloy. The simulation presents the strain–stress relationships, the ideal tensile strengths, and the fracture processes of three phase interfaces. The results show that the α/α and α/β interfaces have larger tensile strength than that of β/β interface. The fractures of both α/α and β/β interfaces are ductile fractures, while the α/β fractures abruptly._Further analyses show that the fracture of the α/β occurs at the interface.展开更多
Discovery of materials using“bottom-up”or“top-down”approach is of great interest in materials science.Layered materials consisting of two-dimensional(2D)building blocks provide a good platform to explore new mater...Discovery of materials using“bottom-up”or“top-down”approach is of great interest in materials science.Layered materials consisting of two-dimensional(2D)building blocks provide a good platform to explore new materials in this respect.In van der Waals(vdW)layered materials,these building blocks are charge neutral and can be isolated from their bulk phase(top-down),but usually grow on substrate.In ionic layered materials,they are charged and usually cannot exist independently but can serve as motifs to construct new materials(bottom-up).In this paper,we introduce our recently constructed databases for 2D material-substrate interface(2DMSI),and 2D charged building blocks.For 2DMSI database,we systematically build a workflow to predict appropriate substrates and their geometries at substrates,and construct the 2DMSI database.For the 2D charged building block database,1208 entries from bulk material database are identified.Information of crystal structure,valence state,source,dimension and so on is provided for each entry with a json format.We also show its application in designing and searching for new functional layered materials.The 2DMSI database,building block database,and designed layered materials are available in Science Data Bank at https://doi.org/10.57760/sciencedb.j00113.00188.展开更多
When current passes through the solid-liquid interface, the growth rate of crystal, solid-liquid interface energy and radius of curvature at dendritic tip will change. Based on this fact, the theoretical relation betw...When current passes through the solid-liquid interface, the growth rate of crystal, solid-liquid interface energy and radius of curvature at dendritic tip will change. Based on this fact, the theoretical relation between the distribution of solute at solid-liquid interface and current density was established, and the effect of current on the distribution coefficient of solute through effecting the rate of crystal growth, the solid-liquid interface energy and the radius of curvature at the dendritic tip was discussed. The results show that as the current density increases, the distribution coefficient of solute tends to rise in a whole, and when the former is larger than about 400 A/cm 2, the latter varies significantly.展开更多
Apparent critical current density(j_(Ac)^(a))of garnet all-solid-state lithium metal symmetric cells(ASSLSCs)is a fundamental parameter for designing all-solid-state lithium metal batteries.Nevertheless,how much the p...Apparent critical current density(j_(Ac)^(a))of garnet all-solid-state lithium metal symmetric cells(ASSLSCs)is a fundamental parameter for designing all-solid-state lithium metal batteries.Nevertheless,how much the possible maximum apparent current density that a given ASSLSC system can endure and how to reveal this potential still require study.Herein,a capacity perturbation strategy aiming to better measure the possible maximum j_(Ac)^(a)is proposed for the first time.With garnet-based plane-surface structure ASSLSCs as an exemplification,the j_(Ac)^(a)is quite small when the capacity is dramatically large.Under a perturbed capacity of 0.001 mA h cm^(-2),the j_(Ac)^(a)is determined to be as high as 2.35 mA cm^(-2)at room temperature.This investigation demonstrates that the capacity perturbation strategy is a feasible strategy for measuring the possible maximum j_(Ac)^(a)of Li/solid electrolyte interface,and hopefully provides good references to explore the critical current density of other types of electrochemical systems.展开更多
The distributions of traps and electron density in the interfaces between polyimide （PI） matrix and Al2O3 nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering （SAXS）...The distributions of traps and electron density in the interfaces between polyimide （PI） matrix and Al2O3 nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering （SAXS） tests. According to the electron density distribution for quasi two-phase mixture doped by spherical nanoparticles, the electron densities in the interfaces of PI/Al2O3 nanocomposite films are evaluated. The trap level density and carrier mobility in the interface are studied. The experimental results show that the distribution and the change rate of the electron density in the three layers of interface are different, indicating different trap distributions in the interface layers. There is a maximum trap level density in the second layer, where the maximum trap level density for the nanocomposite film doped by 25 wt% is 1.054 × 10^22 eV·m^-3 at 1.324eV, resulting in the carrier mobility reducing. In addition, both the thickness and the electron density of the nanocomposite film interface increase with the addition of the doped Al2O3 contents. Through the study on the trap level distribution in the interface, it is possible to further analyze the insulation mechanism and to improve the performance of nano-dielectric materials.展开更多
Fabricating Mg/Al laminate is an effective strategy to circumvent the inherently low formability and poor corrosion resistance of Mg alloys.Here,Mg/Al laminate with good bonding quality and mechanical properties was s...Fabricating Mg/Al laminate is an effective strategy to circumvent the inherently low formability and poor corrosion resistance of Mg alloys.Here,Mg/Al laminate with good bonding quality and mechanical properties was successfully fabricated via porthole die co-extrusion process using ZK60 Mg and TiB_(2)/6061Al composite as constituted layers.Integrating the results from microstructural characterization and mechanical testing,the effects of extrusion temperature on microstructure,interfacial structure,element diffusion,and mechanical properties were investigated.The results show that Mg/Al laminate achieves a sound welding quality by mechanical bonding and diffusion bonding.The obvious intermetallic compounds(βandγ)layer forms at Mg/Al interface,and its thickness increases to 8.3μm as the extrusion temperature reaches 400℃.High extrusion temperature promotes the dynamic recrystallization and grain growth of Mg and Al layers,while the dislocation density decreases.β/γinterface shows a coherent feature,whileγ/Mg interface is semi-coherent with a locally ordered transition zone of 4.5 nm.The rich Mg and Cr layers are found at TiB_(2)/6061 interface,which is conducive to improving the bonding quality.When the extrusion temperature is 370℃,the thickness of diffusion layer is around 5.0μm,and the bonding strength reaches 18.68 MPa,resulting in the best comprehensive mechanical properties.This work provides a new direction for the development of Mg/Al laminate with excellent strength and ductility.展开更多
基金This work is supported in part by NNSF of China(10571126)in part by Program for New Century Excellent Talents in University
文摘In this article, the authors deal with the Cauchy problem of a nonlinear parabolic equation with variable density and absorption. By using energy methods, the authors prove that the interfaces can disappear in finite time under some assumptions on the density functions.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61376096,61327813,and 11234007)
文摘The dependences of Fermi-level pinning on interface state densities for the metal-dielectric, ploycrystalline silicon-dielectric, and metal silicide-dielectric interfaces are investigated by calculating their effective work functions and their pinning factors. The Fermi-level pinning factors and effective work functions of the metal-dielectric interface are observed to be more susceptible to the increasing interface state densities, differing significantly from that of the ploycrystalline silicon-dielectric interface and the metal silicide-dielectric interface. The calculation results indicate that metal silicide gates with high-temperature resistance and low resistivity are a more promising choice for the design of gate materials in metal-oxide semiconductor（MOS） technology.
基金Project supported by the National Natural Science Foundation of China （Grant Nos 60276004 and 60390073） and the Natural Science Foundation of Guangzhou Education Bureau, China （Grant No 2060）. Acknowledgement The author would like to thank Professor J J Shi for detailed and valuable discussion.
文摘The polar interface optical （IO） and surface optical （SO） phonon modes and the corresponding Froehlich electron phonon-interaction Hamiltonian in a freestanding multi-layer wurtzite cylindrical quantum wire （QWR） are derived and studied by employing the transfer matrix method in the dielectric continuum approximation and Loudon＇s uniaxial crystal model. A numerical calculation of a freestanding wurtzite GaN/AlN QWR is performed. The results reveal that for a relatively large azimuthal quantum number m or wave-number kz in the free z-direction, there exist two branches of IO phonon modes localized at the interface, and only one branch of SO mode localized at the surface in the system. The degenerating behaviours of the IO and SO phonon modes in the wurtzite QWR have also been clearly observed for a small kz or m. The limiting frequency properties of the IO and SO modes for large kz and m have been explained reasonably from the mathematical and physical viewpoints. The calculations of electron-phonon coupling functions show that the high-frequency IO phonon branch and SO mode play a more important role in the electron phonon interaction.
基金Project(51175138) supported by the National Natural Science Foundation of ChinaProjects(2012HGZX0030,2013HGCH0011) supported by the Fundamental Research Funds for the Central Universities,China
文摘Powder mixture of pure A1 and oxidized SiC was consolidated into 10% （mass fraction） SiCp/AI composites at 523 K by equal channel angular pressing and torsion （ECAP-T）. The interfacial bonding of the composites was characterized by transmission electron microscopy （TEM） and high resolution transmission electron microscopy （HRTEM）. The selected area electron diffraction （SAED） for the interface was investigated. The elements at the interface were scanned by energy dispersive spectroscopy （EDS） and the EDS mapping was also obtained. X-ray diffraction （XRD） analysis was carried out for the composites fabricated by 1 pass, 2 passes and 4 passes ECAP-T. According to the XRD analysis, the influences of ECAP-T pass on the Bragg angle and interplanar spacing for AI crystalline planes were studied. The results show that after ECAP-T, the interface between A1 and SiC within the composites is a belt of amorphous SiO2 containing a trace of A1, Si and C which diffused from the matrix and the reinforcement. With the growing ECAP-T pass, the Bragg angle decreases and interplanar spacing increases for A1 crystalline planes, due to the accumulated lattice strain. The increasing lattice strain of A1 grains also boosts the density of the dislocation within A1 grains.
基金supported in part by National Natural Science Foundation of China (Grant Nos 10474109 and 10674146)supported is part by the Shanghai Supercomputer Center of China
文摘In this paper molecular dynamics simulations are performed to study the accumulation behaviour of N2 and H2 at water/graphite interface under ambient temperature and pressure. It finds that both N2 and H2 molecules can accumulate at the interface and form one of two states according to the ratio of gas molecules number to square of graphite surface from our simulation results： gas films （pancake-like） for a larger ratio and nanobubbles for a smaller ratio. In addition, we discuss the stabilities of nanobubbles at different environment temperatures. Surprisingly, it is found that the density of both kinds of gas states can be greatly increased, even comparable with that of the liquid N2 and liquid H2. The present results are expected to be helpful for the understanding of the stable existence of gas film （pancake-like） and nanobubbles.
文摘By inserting a thin highly doped crystalline silicon layer between the base region and amorphous silicon layer in an interdigitated back-contact （IBC） silicon solar cell, a new passivation layer is investigated. The passivation layer performance is characterized by numerical simulations. Moreover, the dependence of the output parameters of the solar cell on the additional layer parameters （doping concentration and thickness） is studied. By optimizing the additional passivation layer in terms of doping concentration and thickness, the power conversion efficiency could be improved by a factor of 2.5%, open circuit voltage is increased by 30 mV and the fill factor of the solar cell by 7.4%. The performance enhancement is achieved due to the decrease of recombination rate, a decrease in solar cell resistivity and improvement of field effect passivation at heterojunction interface. The above-mentioned results are compared with reported results of the same conventional interdigitated back-contact silicon solar cell structure. Furthermore, the effect of a-Si：H/c-Si interface defect density on IBC silicon solar cell parameters with a new passivation layer is studied. The additional passivation layer also reduces the sensitivity of output parameter of solar cell to interface defect density.
基金the Natural Science Foundation of China(No.51462028)Program for Young Talents of Science and Technology in Universities of Inner Mongolia Autonomous Region(NJYT-17-A10,NJYT-17-B09)。
文摘Conventionally,interface effects between polymers and fillers are essential for determining the breakdown strength and energy storage density of polymer-based dielectric composites.In this study,we found that interface effects between different fillers have similar behavior.BN and Ba TiO3 fiber composite fillers with three different interface bonding strengths were successfully achieved by controlling composite processes(BT-fiber/BN<BT-fiber@BN<BT-fiber&BN),and introduced into a polyimide(PI)matrix to form composite films.Considerably enhanced breakdown strength and energy storage density were obtained in BT-fiber&BN/PI composites owing to strong interface bonding,compared to other two composite fillers,which are well supported by the data from the finite element simulation.Specifically,PI composites with only 3 wt%BT-fiber&BN possess an optimized energy storage density of approximately 4.25 J/cm^(3)at 4343 k V/cm.These results provide an effective way for adjusting and improving the energy storage properties of polymer-based composites.
文摘Pd-Ni coating shows good corrosion resistance in strong corrosion environments.However,in complex aggressiveenvironments,the performance of the coatings is limited and further improvement is necessary.The effects of the applied platingcurrent density on the composition,structure and properties of Pd-Ni coatings were studied.By changing the current density in thesame bath,multi-layer Pd-Ni coatings were prepared on316L stainless steel.Scanning electronic microscopy,weight loss tests,adhesion strength,porosity and electrochemical methods were used to study the corrosion resistance of the films prepared bydifferent coating methods.Compared with the single layer Pd-Ni coating,the multi-layer coatings showed higher microhardness,lower internal stress,lower porosity and higher adhesive strength.The multi-layer Pd-Ni coating showed obviously better corrosionresistance in hot sulfuric acid solution containing Cl-.
基金Supported by National High-tech Research&Development Program of China(863 Project)(No.2014AA06A613)
文摘BP( Back Propagation) neural network and PSO( Particle Swarm Optimization) are two main heuristic optimization methods,and are usually used as nonlinear inversion methods in geophysics. The authors applied BP neural network and BP neural network optimized with PSO into the inversion of 3D density interface respectively,and a comparison was drawn to demonstrate the inversion results. To start with,a synthetic density interface model was created and we used the proceeding inversion methods to test their effectiveness. And then two methods were applied into the inversion of the depth of Moho interface. According to the results,it is clear to find that the application effect of PSO-BP is better than that of BP network. The BP network structures used in both synthetic and field data are consistent in order to obtain preferable inversion results. The applications in synthetic and field tests demonstrate that PSO-BP is a fast and effective method in the inversion of 3D density interface and the optimization effect is evident compared with BP neural network merely,and thus,this method has practical value.
基金Supported by the Natural Science Foundation of Jiangxi Province under Grant No 20133ACB20005the Key Program of National Natural Science Foundation of China under Grant No 41330318+3 种基金the Key Program of Science and Technology Research of Ministry of Education under Grant No NRE1515the Foundation of Training Academic and Technical Leaders for Main Majors of Jiangxi Province under Grant No 20142BCB22006the Research Foundation of Education Bureau of Jiangxi Province under Grant No GJJ14501the Engineering Research Center of Nuclear Technology Application(East China Institute of Technology)Ministry of Education under Grant NoHJSJYB2016-1
文摘For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance （Rs） on high-frequency （SMHz） capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the CHF-CLF capacitance and the conductance method are 2 ×1012 e V-1 cm-2 and 0.94 × 1012 eV-1 cm-2, respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.
基金Project supported by the National Natural Science Foundation of China(Grant No.60771016)the Scientific Research Foundation of Mianyang Normal University,China(Grant No.QD2013A07)
文摘The 0.9Pb（Sc0.5Ta0.5）O3-0.1PbTiO3/0.55Pb（Sc0.5Ta0.5）O3-0.45 PbTiO3 multilayer thin films（（PSTT10/45）n, n = 1-6, 10） are deposited on SiO2/Si（100） substrates by radio frequency magnetron sputtering technique with La Ni O3 buffer and electrode layer, and the films are subsequently annealed by a two-step rapid thermal approach. It is found that the interfacial density of the film has an important influence on the electric property of the film. The electric property of the film increases and reaches its critical point with the increase of interface density, and then decreases with the further increase of the interface density. With an interfacial density of 16 μm-1, the film shows an optimized dielectric property（high dielectric constant, εr = 765, lowest dielectric loss, tan δ = 0.041, at 1 k Hz） and ferroelectric property（highest remnant polarization,2Pr = 36.9 μC/cm2, low coercive field, 2Ec = 71.9 k V/cm）. The possible reason for the electric behavior of the film is the competition of the interface stress with the interface defect.
文摘The elasto-plastic finite element analyses for an interface crack in dissimilar material, based on the crack energy density (CED) concept, are investigated in mode I loading condition. It is confirmed that the values of CED almost remain stable when the notch radius rho is sufficiently small, both in elastic and elasto-plastic case. Numerical results for both elastic and elasto-plastic cases show that under the mode I loading condition, when the crack propagates to the more stiff material with a small angle, the total CED will become larger than that along the interface. If the clack heads into the more compliant material, the CED will become less than that along the interface.
基金supported by the National Natural Science Foundation of China(No.12005017).
文摘High-purity germanium(HPGe)detectors,which are used for direct dark matter detection,have the advantages of a low threshold and excellent energy resolution.The surface passivation of HPGe has become crucial for achieving an extremely low energy threshold.In this study,first-principles simulations,passivation film preparation,and metal oxide semiconductor(MOS)capacitor characterization were combined to study surface passivation.Theoretical calculations of the energy band structure of the -H,-OH,and -NH_(2) passivation groups on the surface of Ge were performed,and the interface state density and potential with five different passivation groups with N/O atomic ratios were accurately analyzed to obtain a stable surface state.Based on the theoretical calculation results,the surface passivation layers of the Ge_(2)ON_(2) film were prepared via magnetron sputtering in accordance with the optimum atomic ratio structure.The microstructure,C-V,and I-V electrical properties of the layers,and the passivation effect of the Al/Ge_(2)ON_(2)/Ge MOS were characterized to test the interface state density.The mean interface state density obtained by the Terman method was 8.4×10^(11) cm^(-2) eV^(-1).The processing of germanium oxynitrogen passivation films is expected to be used in direct dark matter detection of the HPGe detector surface passivation technology to reduce the detector leakage currents.
基金the National Key R&D Program of China(No.2020YFB2008701)。
文摘ZnO-based thin film transistors(TFTs)with high bias stability are challenging due to the intrinsic defects and overhigh interface trap density.In this work,we fabricated Hf-doped ZnO films with different cycle ratio of Zn/Hf via atomic layer deposition and subsequent annealing treatment.The results show that the cycle ratio of Zn/Hf is optimized to be 10:1,and the corresponding atomic ratio is 2.24%.The threshold voltage and subthreshold swing of the devices are improved as the annealing temperature increases,owning to the decrease of the oxygen vacancies and interface trap density.Furthermore,we developed Hf-doped ZnO TFT with high bias stability by introducing HfO_(2)intermediate layer between the active layer and SiO_(2)dielectric layer,and the shift of threshold voltage is as low as-0.273 V,showing high bias stability.Also,the device has the high field-effective mobility of 52.4 cm^(2)/Vs,low subthreshold swing of 0.68 V/dec and high Ion/Ioff of 3.6×10^(8).The results indicate a promising fabrication method for highperformance ZnO-based TFTs,which may be applied in logic circuits,radio frequency identification and so on.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.50874079,51002102,and 61205179)the Natural Science Foundation of Shanxi Province,China(Grant No.2009021026)
文摘Employing density functional theory, we study the tensile and fracture processes of the phase interfaces in Mg–Li binary alloy. The simulation presents the strain–stress relationships, the ideal tensile strengths, and the fracture processes of three phase interfaces. The results show that the α/α and α/β interfaces have larger tensile strength than that of β/β interface. The fractures of both α/α and β/β interfaces are ductile fractures, while the α/β fractures abruptly._Further analyses show that the fracture of the α/β occurs at the interface.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61888102,52272172,and 52102193)the Major Program of the National Natural Science Foundation of China(Grant No.92163206)+2 种基金the National Key Research and Development Program of China(Grant Nos.2021YFA1201501 and 2022YFA1204100)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB30000000)the Fundamental Research Funds for the Central Universities.
文摘Discovery of materials using“bottom-up”or“top-down”approach is of great interest in materials science.Layered materials consisting of two-dimensional(2D)building blocks provide a good platform to explore new materials in this respect.In van der Waals(vdW)layered materials,these building blocks are charge neutral and can be isolated from their bulk phase(top-down),but usually grow on substrate.In ionic layered materials,they are charged and usually cannot exist independently but can serve as motifs to construct new materials(bottom-up).In this paper,we introduce our recently constructed databases for 2D material-substrate interface(2DMSI),and 2D charged building blocks.For 2DMSI database,we systematically build a workflow to predict appropriate substrates and their geometries at substrates,and construct the 2DMSI database.For the 2D charged building block database,1208 entries from bulk material database are identified.Information of crystal structure,valence state,source,dimension and so on is provided for each entry with a json format.We also show its application in designing and searching for new functional layered materials.The 2DMSI database,building block database,and designed layered materials are available in Science Data Bank at https://doi.org/10.57760/sciencedb.j00113.00188.
文摘When current passes through the solid-liquid interface, the growth rate of crystal, solid-liquid interface energy and radius of curvature at dendritic tip will change. Based on this fact, the theoretical relation between the distribution of solute at solid-liquid interface and current density was established, and the effect of current on the distribution coefficient of solute through effecting the rate of crystal growth, the solid-liquid interface energy and the radius of curvature at the dendritic tip was discussed. The results show that as the current density increases, the distribution coefficient of solute tends to rise in a whole, and when the former is larger than about 400 A/cm 2, the latter varies significantly.
基金the financial support from the Natural Science Foundation for Distinguished Young Scholars of Hunan Province(2020JJ2047)the science and technology innovation Program of Hunan Province(2022RC3048)+2 种基金the Program of Huxiang Young Talents(2019RS2002)the Innovation-Driven Project of Central South University(2020CX027)the Fundamental Research Funds for the Central Universities of Central South University(2021zzts0125)。
文摘Apparent critical current density(j_(Ac)^(a))of garnet all-solid-state lithium metal symmetric cells(ASSLSCs)is a fundamental parameter for designing all-solid-state lithium metal batteries.Nevertheless,how much the possible maximum apparent current density that a given ASSLSC system can endure and how to reveal this potential still require study.Herein,a capacity perturbation strategy aiming to better measure the possible maximum j_(Ac)^(a)is proposed for the first time.With garnet-based plane-surface structure ASSLSCs as an exemplification,the j_(Ac)^(a)is quite small when the capacity is dramatically large.Under a perturbed capacity of 0.001 mA h cm^(-2),the j_(Ac)^(a)is determined to be as high as 2.35 mA cm^(-2)at room temperature.This investigation demonstrates that the capacity perturbation strategy is a feasible strategy for measuring the possible maximum j_(Ac)^(a)of Li/solid electrolyte interface,and hopefully provides good references to explore the critical current density of other types of electrochemical systems.
基金Supported by the National Natural Science Foundation of China under Grant Nos 51337002,51077028,51502063 and 51307046the Foundation of Harbin Science and Technology Bureau of Heilongjiang Province under Grant No RC2014QN017034
文摘The distributions of traps and electron density in the interfaces between polyimide （PI） matrix and Al2O3 nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering （SAXS） tests. According to the electron density distribution for quasi two-phase mixture doped by spherical nanoparticles, the electron densities in the interfaces of PI/Al2O3 nanocomposite films are evaluated. The trap level density and carrier mobility in the interface are studied. The experimental results show that the distribution and the change rate of the electron density in the three layers of interface are different, indicating different trap distributions in the interface layers. There is a maximum trap level density in the second layer, where the maximum trap level density for the nanocomposite film doped by 25 wt% is 1.054 × 10^22 eV·m^-3 at 1.324eV, resulting in the carrier mobility reducing. In addition, both the thickness and the electron density of the nanocomposite film interface increase with the addition of the doped Al2O3 contents. Through the study on the trap level distribution in the interface, it is possible to further analyze the insulation mechanism and to improve the performance of nano-dielectric materials.
基金supports from the National Natural Science Foundation of China(52175338 and 52222510)Science Fund for Distinguished Young Scholars of Shandong Province(ZR2021JQ21)Key Research and Development Program of Shandong Province(2021ZLGX01).
文摘Fabricating Mg/Al laminate is an effective strategy to circumvent the inherently low formability and poor corrosion resistance of Mg alloys.Here,Mg/Al laminate with good bonding quality and mechanical properties was successfully fabricated via porthole die co-extrusion process using ZK60 Mg and TiB_(2)/6061Al composite as constituted layers.Integrating the results from microstructural characterization and mechanical testing,the effects of extrusion temperature on microstructure,interfacial structure,element diffusion,and mechanical properties were investigated.The results show that Mg/Al laminate achieves a sound welding quality by mechanical bonding and diffusion bonding.The obvious intermetallic compounds(βandγ)layer forms at Mg/Al interface,and its thickness increases to 8.3μm as the extrusion temperature reaches 400℃.High extrusion temperature promotes the dynamic recrystallization and grain growth of Mg and Al layers,while the dislocation density decreases.β/γinterface shows a coherent feature,whileγ/Mg interface is semi-coherent with a locally ordered transition zone of 4.5 nm.The rich Mg and Cr layers are found at TiB_(2)/6061 interface,which is conducive to improving the bonding quality.When the extrusion temperature is 370℃,the thickness of diffusion layer is around 5.0μm,and the bonding strength reaches 18.68 MPa,resulting in the best comprehensive mechanical properties.This work provides a new direction for the development of Mg/Al laminate with excellent strength and ductility.
