This paper introduces damping amplifier friction vibration absorbers(DAFVAs),compound damping amplifier friction vibration absorbers(CDAFVAs),nested damping amplifier friction vibration absorbers(NDAFVAs),and levered ...This paper introduces damping amplifier friction vibration absorbers(DAFVAs),compound damping amplifier friction vibration absorbers(CDAFVAs),nested damping amplifier friction vibration absorbers(NDAFVAs),and levered damping amplifier friction vibration absorbers(LDAFVAs)for controlling the structural vibrations and addressing the limitations of conventional tuned mass dampers(TMDs)and frictiontuned mass dampers(FTMDs).The closed-form analytical solution for the optimized design parameters is obtained using the H_(2)and H_(∞)optimization approaches.The efficiency of the recently established closed-form equations for the optimal design parameters is confirmed by the analytical examination.The closed form formulas for the dynamic responses of the main structure and the vibration absorbers are derived using the transfer matrix formulations.The foundation is provided by the harmonic and random-white noise excitations.Moreover,the effectiveness of the innovative dampers has been validated through numerical analysis.The optimal DAFVAs,CDAFVAs,NDAFVAs,and LDAFVAs exhibit at least 30%lower vibration reduction capacity compared with the optimal TMD.To demonstrate the effectiveness of the damping amplification mechanism,the novel absorbers are compared with a conventional FTMD.The results show that the optimized novel absorbers achieve at least 91%greater vibration reduction than the FTMD.These results show how the suggested designs might strengthen the structure's resilience to dynamic loads.展开更多
In this paper,we have mainly studied the amplification effect of thulium-doped fiber amplifier(TDFA)at 2µm,and compared different amplification effects of the one-stage TDFA,two-stage TDFA and three-stage TDFA at...In this paper,we have mainly studied the amplification effect of thulium-doped fiber amplifier(TDFA)at 2µm,and compared different amplification effects of the one-stage TDFA,two-stage TDFA and three-stage TDFA at proper conditions.The simulation results show that within the effective threshold,with the increase of the pump power,the amplification effect of the optical amplifier improves,but the signal-to-noise ratio(SNR)of the output signal decreases,in order to balance the gain benefit and noise coefficient of TDFA,we can use a multi-stage amplification structure.Three-stage backward-pumped series 2.06µm TDFA,whose slope efficiency can achieve 11%at certain condition.At 5.2 W pump power,the output signal gain of 2µm TDFA exceeds 20 dB,and the output SNR is higher than 32 dB.In addition,the effect of the optimum length of thulium-doped fiber on the amplification performance of 2µm TDFA is also analyzed in this paper.These simulation results are important for the experiment and design of 2µm TDFA.展开更多
A cavity magnonic oscillator uses the coupling of a planar transmission line oscillator(cavity) and spin excitations(magnons) in a ferrimagnetic material to achieve superior frequency stability and reduced phase noise...A cavity magnonic oscillator uses the coupling of a planar transmission line oscillator(cavity) and spin excitations(magnons) in a ferrimagnetic material to achieve superior frequency stability and reduced phase noise. Like many low phase noise oscillators, a cavity magnonic oscillator faces the challenge that its narrow resonance profile is not well suited for injection locking amplification. This work presents an improved design for such an oscillator configured as an injection locking amplifier(ILA) with an extended lock range. The proposed design features a two-stage architecture, consisting of a pre-amplification oscillator and a cavity magnonic oscillator, separated by an isolator to prevent backward locking.By optimizing the circuit parameters of each stage, the proposed design achieved an order of magnitude increase in lock range, when compared to its predecessors, all while preserving the phase noise quality of the input, making it well-suited for narrowband, sensitive signal amplification. Furthermore, this work provides a method for using oscillators with high spectral purity as injection locking amplifiers.展开更多
Miniaturized erbium-doped waveguide amplifiers attracted great interests in recent decades due to their high gain-efficiency and function-scalability in the telecom C-band.In this work,an erbium-doped thin film lithiu...Miniaturized erbium-doped waveguide amplifiers attracted great interests in recent decades due to their high gain-efficiency and function-scalability in the telecom C-band.In this work,an erbium-doped thin film lithium niobate waveguide amplifier achieving>10 dB off-chip(fiber-to-fiber)net gain and>20 mW fiber-output amplified power is demonstrated,thanks to the low-propagation-loss waveguides and robust waveguide edge-couplers prepared by the photolithography assisted chemomechanical etching technique.Systematic investigation on the fabricated waveguide amplifiers reveals remarkable optical gain around the peak wavelength of 1532 nm as well as the low fiber-coupling loss of-1.2 dB/facet.A fiber Bragg-grating based waveguide laser is further demonstrated using the fabricated waveguide amplifier as the external gain chip,which generates>2 mW off-chip power continuous-wave lasing around the gain peak at 1532 nm.The unambiguous demonstration of fiber-to-fiber net gain of the erbium-doped thinfilm lithium niobate(TFLN)waveguide amplifier as well as its external gain chip application will benefit diverse fields demanding scalable gain elements with highspeed tunability.展开更多
In a few-mode erbium-doped fiber(FM-EDF),which is a key section in a space-division multiplexing(SDM)communication system,linearly polarized(LP)and orbital angular momentum(OAM)modes,as twomode bases with different ph...In a few-mode erbium-doped fiber(FM-EDF),which is a key section in a space-division multiplexing(SDM)communication system,linearly polarized(LP)and orbital angular momentum(OAM)modes,as twomode bases with different phase profiles,can be transformed into each other.In principle,the LP and OAM modes have a different mode spatial intensity distribution and a gain difference for FM-EDF amplifiers.How to analyze and characterize the differential mode-bases gain(DMBG)is important,but still an issue.We build,for the first time to our knowledge,a local analysis model composed of discrete elements of the FM-EDF cross section in areas of mode spatial intensity distribution azimuthal variation.Using the model of the two mode bases,analysis of local particle number distribution and detailed description of the local gain difference are realized,and the overall gain difference between the two mode bases is obtained.By building an amplifier system based on mode phase profile controlling,the gain of two mode bases is characterized experimentally.The measured DMBG is∼0.8 dB in the second-order mode,which is consistent with the simulation result.This result provides a potential way to reduce the mode gain difference in the FM-EDF,which is important in improving the performance of the SDM communication system.展开更多
The noise feature of a single-mode class-A laser amplifier is investigated by solving the Maxwell–Bloch equations of motion in the presence of the fluctuation force of cavity Langevin.The aim is to calculate the simu...The noise feature of a single-mode class-A laser amplifier is investigated by solving the Maxwell–Bloch equations of motion in the presence of the fluctuation force of cavity Langevin.The aim is to calculate the simultaneous fluctuations that are superimposed on the amplitude and phase of the cavity electric field, as well as the atomic population inversion. The correlation function of these fluctuations yields the amplitude, phase, and spontaneous emission noise fluxes, respectively. The amplitude and spontaneous emission noise fluxes exhibit the Lorentzian profiles in both the below-threshold state and the injection-locking region of the above-threshold state. While noise is typically viewed negatively in science and engineering, this research highlights its positive role as a valuable tool for measuring the optical properties of a laser amplifier. For instance, the degree of first-order temporal coherence(DFOTC) is derived by taking the Fourier transform of the amplitude noise flux. The damping rate of DFOTC is associated with the coherence time of the light emitted by the laser amplifier. Furthermore, the uncertainty relation between noise bandwidth and coherence time is confirmed. Finally, it is demonstrated that the input pumping noise flux, together with the output amplitude and spontaneous emission noise fluxes, satisfy the principle of flux conservation.展开更多
We present a gain adaptive tuning method for fiber Raman amplifier(FRA) using two-stage neural networks(NNs) and double weights updates. After training the connection weights of two-stage NNs separately in training ph...We present a gain adaptive tuning method for fiber Raman amplifier(FRA) using two-stage neural networks(NNs) and double weights updates. After training the connection weights of two-stage NNs separately in training phase, the connection weights of the unified NN are updated again in verification phase according to error between the predicted and target gains to eliminate the inherent error of the NNs. The simulation results show that the mean of root mean square error(RMSE) and maximum error of gains are 0.131 d B and 0.281 d B, respectively. It shows that the method can realize adaptive adjustment function of FRA gain with high accuracy.展开更多
To reduce the number of digital predistortion coefficients, a step memory polynomial （SMP）predistorter is presented. The number of predistortion coefficients is decreased by adjusting the maximum nonlinear order for...To reduce the number of digital predistortion coefficients, a step memory polynomial （SMP）predistorter is presented. The number of predistortion coefficients is decreased by adjusting the maximum nonlinear order for different memory orders in the traditional memory polynomial （MP）predistorter. The proposed SNIP predistorter is identified by an offline learning structure on which the coefficients can be extracted directly from the sampled input and output of a PA. Simulation results show that the SMP predistorter is not tied to a particular PA model and is, therefore, robust. The effectiveness of the SMP predistorter is demonstrated by simulations and experiments on an MP model, a parallel Wiener model, a Wiener-Hammerstein model, a sparsedelay memory polynomial model and a real PA which is fabricated based on the Freescale LDMOSFET MRF21030. Compared with the traditional MP predistorter, the SMP predistorter can reduce the number of coefficients by 60%.展开更多
The single event transient effects of the operational amplifier LM124J and the optocoupler HCPL 5231 are investigated by a pulsed laser test facility. The relation of transient pulse shape to pulsed laser equivalent L...The single event transient effects of the operational amplifier LM124J and the optocoupler HCPL 5231 are investigated by a pulsed laser test facility. The relation of transient pulse shape to pulsed laser equivalent LET is tested,the sensitive areas of the SET effects are identified in voltage follower application mode of LM124J, and the mechanism is initially analyzed. The transient amplitude and duration of HCPL5231 at various equivalent LET are examined,and the SET cross-section is measured. The results of our test and heavy ion experimental data coincide closely,indicating that a pulsed laser test facility is a valid tool for single event effect evaluation.展开更多
We propose a novel all-optical sampling method using nonlinear polarization rotation in a semiconductor optical amplifier. A rate-equation model capable of describing the all-optical sampling mechanism is presented in...We propose a novel all-optical sampling method using nonlinear polarization rotation in a semiconductor optical amplifier. A rate-equation model capable of describing the all-optical sampling mechanism is presented in this paper. Based on this model, we investigate the optimized operating parameters of the proposed system by simulating the output intensity of the probe light as functions of the input polarization angle, the phase induced by the polarization controller, and the ori- entation of the polarization beam splitter. The simulated results show that we can obtain a good linear slope and a large linear dynamic range,which is suitable for all-optical sampling. The operating power of the pump light can be less than lmW. The presented all-optical sampling method can potentially operate at a sampling rate up to hundreds GS/s and needs low optical power.展开更多
Good performance SiGe power amplifiers applicable to wireless communications are demonstrated.The output power can reach more than 30dBm in class B mode.And in class AB mode,the output power at 1dB compression point (...Good performance SiGe power amplifiers applicable to wireless communications are demonstrated.The output power can reach more than 30dBm in class B mode.And in class AB mode,the output power at 1dB compression point ( P 1dB ) is 24dBm,the output third order intercept (TOI) power is 39dBm under V cc of 4V.The highest power added efficiency (PAE) and PAE at 1dB compression point are 34% and 25%,respectively.The adjacent channel power rejection for CDMA signal is more than 42dBc,which complies with IS95 specification.展开更多
A 12 Gbit/s limiting amplifier for fiber-optic transmission system is realized in a 2μm GaAs HBT technology. The whole circuit consists of an input buffer, three similar amplifier cells, an output buffer for driving ...A 12 Gbit/s limiting amplifier for fiber-optic transmission system is realized in a 2μm GaAs HBT technology. The whole circuit consists of an input buffer, three similar amplifier cells, an output buffer for driving 50 ft transmission lines and a pair of feedback networks for offset cancellation. At a positive supply voltage of 2 V and a negative supply voltage of - 2V, the power dissipation is about 280 mW. The small-signal gain is higher than 46 dB and the input dynamic range is about 40 dB with a constant single-ended output voltage swing of 400 mV. Satisfactory eye-diagrams are obtained at the bit rate of 12 Gbit/s limited by the test set-up. The chip area is 1.15 mm ×0.7 mm.展开更多
A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and...A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at VDS = 40V, IDS = 0.9A, a maximum CW output power of 41.4dBm with a maximum power added efficiency （PAE） of 32.54% and a power combine efficiency of 69% was achieved at 5.4GHz.展开更多
A 4-12GHz wideband power amplifier,using a balanced configuration with a strip line Lange coupler, is designed and fabricated. This power amplifier shows a maximum continuous wave output power of 29.5dBm at 8GHz cente...A 4-12GHz wideband power amplifier,using a balanced configuration with a strip line Lange coupler, is designed and fabricated. This power amplifier shows a maximum continuous wave output power of 29.5dBm at 8GHz center frequency with an associated gain of 8.5dB and a gain flatness of ＋ /- 0.6dB in the 4-12GHz frequency range.展开更多
The impedance characteristics of distributed amplifiers are analyzed based on T-type matching networks, and a distributed power amplifier consisting of three gain cells is proposed. Non-uniform T-type matching network...The impedance characteristics of distributed amplifiers are analyzed based on T-type matching networks, and a distributed power amplifier consisting of three gain cells is proposed. Non-uniform T-type matching networks are adopted to make the impedance of artificial transmission lines connected to the gate and drain change stage by stage gradually, which provides good impedance matching and improves the output power and efficiency. The measurement results show that the amplifier gives an average forward gain of 6 dB from 3 to 16. 5 GHz. In the desired band, the input return loss is typically less than - 9. 5 dB, and the output return loss is better than -8.5 dB. The output power at 1-dB gain compression point is from 3.6 to 10. 6 dBm in the band of 2 to 16 GHz while the power added efficiency （PAE） is from 2% to 12. 5% . The power consumption of the amplifier is 81 mW with a supply of 1.8 V, and the chip area is 0.91 mm × 0.45 mm.展开更多
According to the theories of optimal noise match and optimal power match, a method for calculating the optimal source impedance of low noise amplifier （LNA） is proposed based on the input reflection coefficient S11....According to the theories of optimal noise match and optimal power match, a method for calculating the optimal source impedance of low noise amplifier （LNA） is proposed based on the input reflection coefficient S11. Moreover.with the help of Smith chart, the calculation process is detailed, and the trade-off between the lowest noise figure and the maximum power gain is obtained during the design of LNA input impedance matching network. Based on the Chart 0. 35-μm CMOS process, a traditional cascode LNA circuit is designed and manufactured. Simulation and experimental results have a good agreement with the theoretical analysis, thus proving the correctness of theoretical analysis and the feasibility of the method.展开更多
A RF low noise amplifier,integrated in a single bluetooth transceiver chip and fabricated in 0.35μm digital CMOS technology,is presented.Under the consideration of ESD protection and package,design methodology is dis...A RF low noise amplifier,integrated in a single bluetooth transceiver chip and fabricated in 0.35μm digital CMOS technology,is presented.Under the consideration of ESD protection and package,design methodology is discussed from the aspects of noise optimization,impedance match,and forward gain.At 2.05GHz,the measured S 11 is -6.4dB, S 21 is 11dB with 3dB-BW of 300MHz,and NF is about 5.3dB.It indicates that comprehensive consideration of parasitics,package model,and reasonable process is necessary for RF circuit design.展开更多
Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order in...Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order intermodulation distortion(IM2 ), the third order intermodulation distortion(IM 3) and intercept point(IP 3) are deduced. With the aid of software Multisim, we simulate transistor common emitter amplifier, transistor common emitter amplifier with resistor in emitter, differential amplifier and differential amplifier with resistor between emitters. The simulational results and theoretical analyses are almost the same.展开更多
A monolithic microwave integrated circuit （MMIC） power amplifier （PA） is proposed. It adopts a new on-chip bias circuit, which not only avoids the instability of the direct current bias caused by the change in the...A monolithic microwave integrated circuit （MMIC） power amplifier （PA） is proposed. It adopts a new on-chip bias circuit, which not only avoids the instability of the direct current bias caused by the change in the power supply and temperature, but also compensates deviations caused by the increase in input power. The bias circuit is a current-mirror configuration, and the feedback circuit helps to maintain bias voltage at a constant level. The gain of the feedback circuit is improved by the addition of a non-inverting amplifier within the feedback circuit. A shunt capacitor at the base node of the active bias transistor enhances the linearity of the PA. The chip is fabricated in an InGaP/GaAs heterojunction bipolar transistor （HBT） process. Measured results exhibit a 26. 6-dBm output compression point, 33.6% power-added efficiency （PAE） and - 40.2 dBc adjacent channel power ratio （ACPR） for wide-band code division multiple access （W-CDMA） applications.展开更多
Aiming at the specific protocol of RFID technology,a 915MHz CMOS transmitter front-end for OOK modulation is implemented in a 0.18μm CMOS process. The transmitter incorporates a class-E power amplifier （PA）, a modu...Aiming at the specific protocol of RFID technology,a 915MHz CMOS transmitter front-end for OOK modulation is implemented in a 0.18μm CMOS process. The transmitter incorporates a class-E power amplifier （PA）, a modulator, and a control logic unit. The direct-conversion architecture minimizes the required on-and-off-chip components and provides a low-cost and efficient solution. A novel structure is proposed to provide the modulation depth of 100% and 18% ,respectively. The PA presents an output ldB power of 17.6dBm while maintaining a maximum PAE of 35.4%.展开更多
基金the postdoctoral research grant received from the University of Glasgow for the partial financial support for this research work。
文摘This paper introduces damping amplifier friction vibration absorbers(DAFVAs),compound damping amplifier friction vibration absorbers(CDAFVAs),nested damping amplifier friction vibration absorbers(NDAFVAs),and levered damping amplifier friction vibration absorbers(LDAFVAs)for controlling the structural vibrations and addressing the limitations of conventional tuned mass dampers(TMDs)and frictiontuned mass dampers(FTMDs).The closed-form analytical solution for the optimized design parameters is obtained using the H_(2)and H_(∞)optimization approaches.The efficiency of the recently established closed-form equations for the optimal design parameters is confirmed by the analytical examination.The closed form formulas for the dynamic responses of the main structure and the vibration absorbers are derived using the transfer matrix formulations.The foundation is provided by the harmonic and random-white noise excitations.Moreover,the effectiveness of the innovative dampers has been validated through numerical analysis.The optimal DAFVAs,CDAFVAs,NDAFVAs,and LDAFVAs exhibit at least 30%lower vibration reduction capacity compared with the optimal TMD.To demonstrate the effectiveness of the damping amplification mechanism,the novel absorbers are compared with a conventional FTMD.The results show that the optimized novel absorbers achieve at least 91%greater vibration reduction than the FTMD.These results show how the suggested designs might strengthen the structure's resilience to dynamic loads.
基金supported by the Natural Science Foundation of Guangdong Province(Nos.2023A1515010093)the Shenzhen Fundamental Research Program(Nos.JCYJ20220809170611004,20231121110828001 and 20231121113641002)the Taipei University of Technology-Shenzhen University Joint Research Program(No.2024001).
文摘In this paper,we have mainly studied the amplification effect of thulium-doped fiber amplifier(TDFA)at 2µm,and compared different amplification effects of the one-stage TDFA,two-stage TDFA and three-stage TDFA at proper conditions.The simulation results show that within the effective threshold,with the increase of the pump power,the amplification effect of the optical amplifier improves,but the signal-to-noise ratio(SNR)of the output signal decreases,in order to balance the gain benefit and noise coefficient of TDFA,we can use a multi-stage amplification structure.Three-stage backward-pumped series 2.06µm TDFA,whose slope efficiency can achieve 11%at certain condition.At 5.2 W pump power,the output signal gain of 2µm TDFA exceeds 20 dB,and the output SNR is higher than 32 dB.In addition,the effect of the optimum length of thulium-doped fiber on the amplification performance of 2µm TDFA is also analyzed in this paper.These simulation results are important for the experiment and design of 2µm TDFA.
基金funded by NSERC Discovery Grants, NSERC Discovery Accelerator Supplements, Innovation Proof-of-Concept Grant of Research Manitoba, and Faculty of Science Research Innovation and Commercialization Grant of University of Manitoba (C.-M.H.)。
文摘A cavity magnonic oscillator uses the coupling of a planar transmission line oscillator(cavity) and spin excitations(magnons) in a ferrimagnetic material to achieve superior frequency stability and reduced phase noise. Like many low phase noise oscillators, a cavity magnonic oscillator faces the challenge that its narrow resonance profile is not well suited for injection locking amplification. This work presents an improved design for such an oscillator configured as an injection locking amplifier(ILA) with an extended lock range. The proposed design features a two-stage architecture, consisting of a pre-amplification oscillator and a cavity magnonic oscillator, separated by an isolator to prevent backward locking.By optimizing the circuit parameters of each stage, the proposed design achieved an order of magnitude increase in lock range, when compared to its predecessors, all while preserving the phase noise quality of the input, making it well-suited for narrowband, sensitive signal amplification. Furthermore, this work provides a method for using oscillators with high spectral purity as injection locking amplifiers.
基金financial supports from National Key R&D Program of China(Grant No.2022YFA1205100,2022YFA1404600)National Natural Science Foundation of China(Grant Nos.12192251,12334014,12474325,12134001,12304418,12474378,12274133,12174107,12174113,12274130)+2 种基金the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0301403)Shanghai Municipal Science and Technology Major Project(Grant No.2019SHZDZX01)Fundamental Research Funds for the Central Universities,the Engineering Research Center for Nanophotonics&Advanced Instrument,Ministry of Education,East China Normal University(No.2023nmc005).
文摘Miniaturized erbium-doped waveguide amplifiers attracted great interests in recent decades due to their high gain-efficiency and function-scalability in the telecom C-band.In this work,an erbium-doped thin film lithium niobate waveguide amplifier achieving>10 dB off-chip(fiber-to-fiber)net gain and>20 mW fiber-output amplified power is demonstrated,thanks to the low-propagation-loss waveguides and robust waveguide edge-couplers prepared by the photolithography assisted chemomechanical etching technique.Systematic investigation on the fabricated waveguide amplifiers reveals remarkable optical gain around the peak wavelength of 1532 nm as well as the low fiber-coupling loss of-1.2 dB/facet.A fiber Bragg-grating based waveguide laser is further demonstrated using the fabricated waveguide amplifier as the external gain chip,which generates>2 mW off-chip power continuous-wave lasing around the gain peak at 1532 nm.The unambiguous demonstration of fiber-to-fiber net gain of the erbium-doped thinfilm lithium niobate(TFLN)waveguide amplifier as well as its external gain chip application will benefit diverse fields demanding scalable gain elements with highspeed tunability.
基金supported by the National Key Research and Development Program of China(Grant No.2019YFA0706300)the National Natural Science Foundation of China(Grant Nos.U22B2010,62035018,and U2001601)+1 种基金the Program of Marine Economy Development Special Fund(Six Marine Industries)under the Department of Natural Resources of Guangdong Province(Grant No.GDNRC[2024]16)the project supported by the Southern Marine Science and Engineering Guangdong Laboratory(Zhuhai)(Grant No.SML2023SP231).
文摘In a few-mode erbium-doped fiber(FM-EDF),which is a key section in a space-division multiplexing(SDM)communication system,linearly polarized(LP)and orbital angular momentum(OAM)modes,as twomode bases with different phase profiles,can be transformed into each other.In principle,the LP and OAM modes have a different mode spatial intensity distribution and a gain difference for FM-EDF amplifiers.How to analyze and characterize the differential mode-bases gain(DMBG)is important,but still an issue.We build,for the first time to our knowledge,a local analysis model composed of discrete elements of the FM-EDF cross section in areas of mode spatial intensity distribution azimuthal variation.Using the model of the two mode bases,analysis of local particle number distribution and detailed description of the local gain difference are realized,and the overall gain difference between the two mode bases is obtained.By building an amplifier system based on mode phase profile controlling,the gain of two mode bases is characterized experimentally.The measured DMBG is∼0.8 dB in the second-order mode,which is consistent with the simulation result.This result provides a potential way to reduce the mode gain difference in the FM-EDF,which is important in improving the performance of the SDM communication system.
文摘The noise feature of a single-mode class-A laser amplifier is investigated by solving the Maxwell–Bloch equations of motion in the presence of the fluctuation force of cavity Langevin.The aim is to calculate the simultaneous fluctuations that are superimposed on the amplitude and phase of the cavity electric field, as well as the atomic population inversion. The correlation function of these fluctuations yields the amplitude, phase, and spontaneous emission noise fluxes, respectively. The amplitude and spontaneous emission noise fluxes exhibit the Lorentzian profiles in both the below-threshold state and the injection-locking region of the above-threshold state. While noise is typically viewed negatively in science and engineering, this research highlights its positive role as a valuable tool for measuring the optical properties of a laser amplifier. For instance, the degree of first-order temporal coherence(DFOTC) is derived by taking the Fourier transform of the amplitude noise flux. The damping rate of DFOTC is associated with the coherence time of the light emitted by the laser amplifier. Furthermore, the uncertainty relation between noise bandwidth and coherence time is confirmed. Finally, it is demonstrated that the input pumping noise flux, together with the output amplitude and spontaneous emission noise fluxes, satisfy the principle of flux conservation.
基金supported by the Natural Science Research Project of Colleges and Universities in Anhui Province (No.KJ2021A0479)the Science Research Program of Anhui University of Finance and Economics (No.ACKYC22082)。
文摘We present a gain adaptive tuning method for fiber Raman amplifier(FRA) using two-stage neural networks(NNs) and double weights updates. After training the connection weights of two-stage NNs separately in training phase, the connection weights of the unified NN are updated again in verification phase according to error between the predicted and target gains to eliminate the inherent error of the NNs. The simulation results show that the mean of root mean square error(RMSE) and maximum error of gains are 0.131 d B and 0.281 d B, respectively. It shows that the method can realize adaptive adjustment function of FRA gain with high accuracy.
基金The National High Technology Research and Development Program of China (863 Program) (No.2008AA01Z211)the Project of Industry-Academia-Research Demonstration Base of Education Ministry of Guangdong Province (No.2007B090200012)
文摘To reduce the number of digital predistortion coefficients, a step memory polynomial （SMP）predistorter is presented. The number of predistortion coefficients is decreased by adjusting the maximum nonlinear order for different memory orders in the traditional memory polynomial （MP）predistorter. The proposed SNIP predistorter is identified by an offline learning structure on which the coefficients can be extracted directly from the sampled input and output of a PA. Simulation results show that the SMP predistorter is not tied to a particular PA model and is, therefore, robust. The effectiveness of the SMP predistorter is demonstrated by simulations and experiments on an MP model, a parallel Wiener model, a Wiener-Hammerstein model, a sparsedelay memory polynomial model and a real PA which is fabricated based on the Freescale LDMOSFET MRF21030. Compared with the traditional MP predistorter, the SMP predistorter can reduce the number of coefficients by 60%.
文摘The single event transient effects of the operational amplifier LM124J and the optocoupler HCPL 5231 are investigated by a pulsed laser test facility. The relation of transient pulse shape to pulsed laser equivalent LET is tested,the sensitive areas of the SET effects are identified in voltage follower application mode of LM124J, and the mechanism is initially analyzed. The transient amplitude and duration of HCPL5231 at various equivalent LET are examined,and the SET cross-section is measured. The results of our test and heavy ion experimental data coincide closely,indicating that a pulsed laser test facility is a valid tool for single event effect evaluation.
文摘We propose a novel all-optical sampling method using nonlinear polarization rotation in a semiconductor optical amplifier. A rate-equation model capable of describing the all-optical sampling mechanism is presented in this paper. Based on this model, we investigate the optimized operating parameters of the proposed system by simulating the output intensity of the probe light as functions of the input polarization angle, the phase induced by the polarization controller, and the ori- entation of the polarization beam splitter. The simulated results show that we can obtain a good linear slope and a large linear dynamic range,which is suitable for all-optical sampling. The operating power of the pump light can be less than lmW. The presented all-optical sampling method can potentially operate at a sampling rate up to hundreds GS/s and needs low optical power.
文摘Good performance SiGe power amplifiers applicable to wireless communications are demonstrated.The output power can reach more than 30dBm in class B mode.And in class AB mode,the output power at 1dB compression point ( P 1dB ) is 24dBm,the output third order intercept (TOI) power is 39dBm under V cc of 4V.The highest power added efficiency (PAE) and PAE at 1dB compression point are 34% and 25%,respectively.The adjacent channel power rejection for CDMA signal is more than 42dBc,which complies with IS95 specification.
文摘A 12 Gbit/s limiting amplifier for fiber-optic transmission system is realized in a 2μm GaAs HBT technology. The whole circuit consists of an input buffer, three similar amplifier cells, an output buffer for driving 50 ft transmission lines and a pair of feedback networks for offset cancellation. At a positive supply voltage of 2 V and a negative supply voltage of - 2V, the power dissipation is about 280 mW. The small-signal gain is higher than 46 dB and the input dynamic range is about 40 dB with a constant single-ended output voltage swing of 400 mV. Satisfactory eye-diagrams are obtained at the bit rate of 12 Gbit/s limited by the test set-up. The chip area is 1.15 mm ×0.7 mm.
文摘A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at VDS = 40V, IDS = 0.9A, a maximum CW output power of 41.4dBm with a maximum power added efficiency （PAE） of 32.54% and a power combine efficiency of 69% was achieved at 5.4GHz.
文摘A 4-12GHz wideband power amplifier,using a balanced configuration with a strip line Lange coupler, is designed and fabricated. This power amplifier shows a maximum continuous wave output power of 29.5dBm at 8GHz center frequency with an associated gain of 8.5dB and a gain flatness of ＋ /- 0.6dB in the 4-12GHz frequency range.
基金The National Natural Science Foundation of China(No.61106021)the Postdoctoral Science Foundation of China(No.2015M582541)+1 种基金the Natural Science Foundation of Higher Education Institutions of Jiangsu Province(No.15KJB510020)the Research Fund of Nanjing University of Posts and Telecommunications(No.NY215140,No.NY215167)
文摘The impedance characteristics of distributed amplifiers are analyzed based on T-type matching networks, and a distributed power amplifier consisting of three gain cells is proposed. Non-uniform T-type matching networks are adopted to make the impedance of artificial transmission lines connected to the gate and drain change stage by stage gradually, which provides good impedance matching and improves the output power and efficiency. The measurement results show that the amplifier gives an average forward gain of 6 dB from 3 to 16. 5 GHz. In the desired band, the input return loss is typically less than - 9. 5 dB, and the output return loss is better than -8.5 dB. The output power at 1-dB gain compression point is from 3.6 to 10. 6 dBm in the band of 2 to 16 GHz while the power added efficiency （PAE） is from 2% to 12. 5% . The power consumption of the amplifier is 81 mW with a supply of 1.8 V, and the chip area is 0.91 mm × 0.45 mm.
基金Supported by the Nature Science Foundation for Key Program of Jiangsu Higher Education Institu-tions of China(09KJA510001)the Creative Talents Foundation of Nantong Universitythe Scientific ResearchFoundation of Nantong University(08B24,09ZW005)~~
文摘According to the theories of optimal noise match and optimal power match, a method for calculating the optimal source impedance of low noise amplifier （LNA） is proposed based on the input reflection coefficient S11. Moreover.with the help of Smith chart, the calculation process is detailed, and the trade-off between the lowest noise figure and the maximum power gain is obtained during the design of LNA input impedance matching network. Based on the Chart 0. 35-μm CMOS process, a traditional cascode LNA circuit is designed and manufactured. Simulation and experimental results have a good agreement with the theoretical analysis, thus proving the correctness of theoretical analysis and the feasibility of the method.
文摘A RF low noise amplifier,integrated in a single bluetooth transceiver chip and fabricated in 0.35μm digital CMOS technology,is presented.Under the consideration of ESD protection and package,design methodology is discussed from the aspects of noise optimization,impedance match,and forward gain.At 2.05GHz,the measured S 11 is -6.4dB, S 21 is 11dB with 3dB-BW of 300MHz,and NF is about 5.3dB.It indicates that comprehensive consideration of parasitics,package model,and reasonable process is necessary for RF circuit design.
文摘Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order intermodulation distortion(IM2 ), the third order intermodulation distortion(IM 3) and intercept point(IP 3) are deduced. With the aid of software Multisim, we simulate transistor common emitter amplifier, transistor common emitter amplifier with resistor in emitter, differential amplifier and differential amplifier with resistor between emitters. The simulational results and theoretical analyses are almost the same.
基金The National High Technology Research and Development Program of China(863 Program)(No.2009AA01Z260)
文摘A monolithic microwave integrated circuit （MMIC） power amplifier （PA） is proposed. It adopts a new on-chip bias circuit, which not only avoids the instability of the direct current bias caused by the change in the power supply and temperature, but also compensates deviations caused by the increase in input power. The bias circuit is a current-mirror configuration, and the feedback circuit helps to maintain bias voltage at a constant level. The gain of the feedback circuit is improved by the addition of a non-inverting amplifier within the feedback circuit. A shunt capacitor at the base node of the active bias transistor enhances the linearity of the PA. The chip is fabricated in an InGaP/GaAs heterojunction bipolar transistor （HBT） process. Measured results exhibit a 26. 6-dBm output compression point, 33.6% power-added efficiency （PAE） and - 40.2 dBc adjacent channel power ratio （ACPR） for wide-band code division multiple access （W-CDMA） applications.
文摘Aiming at the specific protocol of RFID technology,a 915MHz CMOS transmitter front-end for OOK modulation is implemented in a 0.18μm CMOS process. The transmitter incorporates a class-E power amplifier （PA）, a modulator, and a control logic unit. The direct-conversion architecture minimizes the required on-and-off-chip components and provides a low-cost and efficient solution. A novel structure is proposed to provide the modulation depth of 100% and 18% ,respectively. The PA presents an output ldB power of 17.6dBm while maintaining a maximum PAE of 35.4%.
