A low hole injection efficiency for InGaN/GaN micro-light-emitting diodes(μLEDs) has become one of the main bottlenecks affecting the improvement of the external quantum efficiency(EQE) and the optical power. In this...A low hole injection efficiency for InGaN/GaN micro-light-emitting diodes(μLEDs) has become one of the main bottlenecks affecting the improvement of the external quantum efficiency(EQE) and the optical power. In this work, we propose and fabricate a polarization mismatched p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure for 445 nm GaN-based μLEDs with the size of 40 × 40 μm^(2), which serves as the hole injection layer. The polarization-induced electric field in the p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure provides holes with more energy and can facilitate the non-equilibrium holes to transport into the active region for radiative recombination. Meanwhile, a secondary etched mesa for μLEDs is also designed, which can effectively keep the holes apart from the defected region of the mesa sidewalls, and the surface nonradiative recombination can be suppressed. Therefore, the proposed μLED with the secondary etched mesa and the p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure has the enhanced EQE and the improved optical power density when compared with the μLED without such designs.展开更多
The effect of mesa size on th e thermal characteristics of etched mesa vertical-cavity surface-emitting lase rs(VCSELs) is studied. The numerical results show that the mesa size of the top mirror strongly influences t...The effect of mesa size on th e thermal characteristics of etched mesa vertical-cavity surface-emitting lase rs(VCSELs) is studied. The numerical results show that the mesa size of the top mirror strongly influences the temperature distribution inside the etched mesa V CSEL. Under a certain driving voltage, with decreasing mesa size, the location o f the maximal temperature moves towards the p-contact metal, the temperature in the core region of the active layer rises greatly, and the thermal characterist ics of the etched mesa VCSELs will deteriorate.展开更多
基金supported in part by the National Natural Science Foundation of China (Grant Nos.62074050 and 61975051)Research Fund by State Key Laboratory of Reliability and Intelligence of Electrical Equipment,Hebei University of Technology (Grant Nos.EERI PI2020008 and EERI_PD2021012)Joint Research Project for Tunghsu Group and Hebei University of Technology (Grant No.HI1909)。
文摘A low hole injection efficiency for InGaN/GaN micro-light-emitting diodes(μLEDs) has become one of the main bottlenecks affecting the improvement of the external quantum efficiency(EQE) and the optical power. In this work, we propose and fabricate a polarization mismatched p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure for 445 nm GaN-based μLEDs with the size of 40 × 40 μm^(2), which serves as the hole injection layer. The polarization-induced electric field in the p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure provides holes with more energy and can facilitate the non-equilibrium holes to transport into the active region for radiative recombination. Meanwhile, a secondary etched mesa for μLEDs is also designed, which can effectively keep the holes apart from the defected region of the mesa sidewalls, and the surface nonradiative recombination can be suppressed. Therefore, the proposed μLED with the secondary etched mesa and the p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure has the enhanced EQE and the improved optical power density when compared with the μLED without such designs.
基金National High Technology Research and Development Programof China(2001AA312180)
文摘The effect of mesa size on th e thermal characteristics of etched mesa vertical-cavity surface-emitting lase rs(VCSELs) is studied. The numerical results show that the mesa size of the top mirror strongly influences the temperature distribution inside the etched mesa V CSEL. Under a certain driving voltage, with decreasing mesa size, the location o f the maximal temperature moves towards the p-contact metal, the temperature in the core region of the active layer rises greatly, and the thermal characterist ics of the etched mesa VCSELs will deteriorate.
