The universal creep equation is successful in relating the creep （ε） to the aging time （t） , coefficient of retardation time （β） , and intrinsic time （ to ）. This relation was used to treat the creep experim...The universal creep equation is successful in relating the creep （ε） to the aging time （t） , coefficient of retardation time （β） , and intrinsic time （ to ）. This relation was used to treat the creep experimental data for polyvinyl chloride （ PVC ） specimens at a given stress and different aging times. The βgs found by the “polynomial fitting” method in this work instead of the “middle - point” method reported in the literature. The unified master line was constructed with the treated data and curves according to the universal equation. The master line can be used to predict the long- term creed behavior and lifetime by extrapolating.展开更多
Threshold voltage (V<sub>TH</sub>) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise V<sub>TH</sub> value...Threshold voltage (V<sub>TH</sub>) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise V<sub>TH</sub> value of the device is extracted and evaluated by several estimation techniques. However, these assessed values of V<sub>TH</sub> diverge from the exact values due to various short channel effects (SCEs) and non-idealities present in the device. Numerous prevalent V<sub>TH</sub> extraction methods are discussed. All the results are verified by extensive 2-D TCAD simulation and confirmed through analytical results at 10-nm technology node. Aim of this research paper is to explore and present a comparative study of largely applied threshold extraction methods for bulk driven nano-MOSFETs especially at 10-nm technology node along with various sub 45-nm technology nodes. Application of the threshold extraction methods to implement noise analysis is briefly presented to infer the most appropriate extraction method at nanometer technology nodes.展开更多
基金Sponsored by the Departmet of Science ad Technology, Government of Heilongjiang Province(Grant No.GC04A407).
文摘The universal creep equation is successful in relating the creep （ε） to the aging time （t） , coefficient of retardation time （β） , and intrinsic time （ to ）. This relation was used to treat the creep experimental data for polyvinyl chloride （ PVC ） specimens at a given stress and different aging times. The βgs found by the “polynomial fitting” method in this work instead of the “middle - point” method reported in the literature. The unified master line was constructed with the treated data and curves according to the universal equation. The master line can be used to predict the long- term creed behavior and lifetime by extrapolating.
文摘Threshold voltage (V<sub>TH</sub>) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise V<sub>TH</sub> value of the device is extracted and evaluated by several estimation techniques. However, these assessed values of V<sub>TH</sub> diverge from the exact values due to various short channel effects (SCEs) and non-idealities present in the device. Numerous prevalent V<sub>TH</sub> extraction methods are discussed. All the results are verified by extensive 2-D TCAD simulation and confirmed through analytical results at 10-nm technology node. Aim of this research paper is to explore and present a comparative study of largely applied threshold extraction methods for bulk driven nano-MOSFETs especially at 10-nm technology node along with various sub 45-nm technology nodes. Application of the threshold extraction methods to implement noise analysis is briefly presented to infer the most appropriate extraction method at nanometer technology nodes.
