Threshold voltage (V<sub>TH</sub>) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise V<sub>TH</sub> value...Threshold voltage (V<sub>TH</sub>) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise V<sub>TH</sub> value of the device is extracted and evaluated by several estimation techniques. However, these assessed values of V<sub>TH</sub> diverge from the exact values due to various short channel effects (SCEs) and non-idealities present in the device. Numerous prevalent V<sub>TH</sub> extraction methods are discussed. All the results are verified by extensive 2-D TCAD simulation and confirmed through analytical results at 10-nm technology node. Aim of this research paper is to explore and present a comparative study of largely applied threshold extraction methods for bulk driven nano-MOSFETs especially at 10-nm technology node along with various sub 45-nm technology nodes. Application of the threshold extraction methods to implement noise analysis is briefly presented to infer the most appropriate extraction method at nanometer technology nodes.展开更多
The fourth fundamental circuit element memristor completes the missing link between charge and mag- netic flux. It consists of the function of the resistor as well as memory in nonlinear fashion. The property of the m...The fourth fundamental circuit element memristor completes the missing link between charge and mag- netic flux. It consists of the function of the resistor as well as memory in nonlinear fashion. The property of the memristor depends on the magnitude and direction of applied potential. This unique property makes it the primi- tive building block for many applications such as resistive memories, soft computing, neuromorphic systems and chaotic circuits etc. In this paper we report TiO2-based nanostructured memristor modelling. The present memris- tor model is constructed in MATLAB environment with consideration of the linear drift model of memristor. The result obtained from the linear drift model is well matched with earlier reported results by other research groups.展开更多
文摘Threshold voltage (V<sub>TH</sub>) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise V<sub>TH</sub> value of the device is extracted and evaluated by several estimation techniques. However, these assessed values of V<sub>TH</sub> diverge from the exact values due to various short channel effects (SCEs) and non-idealities present in the device. Numerous prevalent V<sub>TH</sub> extraction methods are discussed. All the results are verified by extensive 2-D TCAD simulation and confirmed through analytical results at 10-nm technology node. Aim of this research paper is to explore and present a comparative study of largely applied threshold extraction methods for bulk driven nano-MOSFETs especially at 10-nm technology node along with various sub 45-nm technology nodes. Application of the threshold extraction methods to implement noise analysis is briefly presented to infer the most appropriate extraction method at nanometer technology nodes.
文摘The fourth fundamental circuit element memristor completes the missing link between charge and mag- netic flux. It consists of the function of the resistor as well as memory in nonlinear fashion. The property of the memristor depends on the magnitude and direction of applied potential. This unique property makes it the primi- tive building block for many applications such as resistive memories, soft computing, neuromorphic systems and chaotic circuits etc. In this paper we report TiO2-based nanostructured memristor modelling. The present memris- tor model is constructed in MATLAB environment with consideration of the linear drift model of memristor. The result obtained from the linear drift model is well matched with earlier reported results by other research groups.
