There have been investigated reactive properties of silicon avalanche photodiodes （MAPD---micropixel avalanche photodiode） with deeply buried micropixels （amplification channels） within AC signal frequencies f = 5...There have been investigated reactive properties of silicon avalanche photodiodes （MAPD---micropixel avalanche photodiode） with deeply buried micropixels （amplification channels） within AC signal frequencies f = 50-500 kHz. By experiment it is found out that measured capacitance of structures involving three p-n junctions in section passing through the pixels increases exponentially with Ufor （negative potential is applying to n-Si substrate） reaches maximum and at certain value Ufor = Uinv changes the sign becoming the negative capacitance （equivalent inductance）. The magnitude of active component of complete conduction G grows with the applied voltage and reaches maximum value -70 mS at Ufor = 1.0 V （f = 500 kHz）. There has been calculated difference in phase tp appearing between current and voltage and it is shown that at Ufor = 0 V the q = 80 and passes through the zero at Ufor = 0.55 V. The magnitude of negative capacitance recalculated to the inductance value with the growth of forward bias being decreased sharply tends to the saturation.展开更多
Tunnel field effect transistors（TFETs） are promising devices for low power applications.An analytical threshold voltage model,based on the channel surface potential and electric field obtained by solving the 2D Pois...Tunnel field effect transistors（TFETs） are promising devices for low power applications.An analytical threshold voltage model,based on the channel surface potential and electric field obtained by solving the 2D Poisson＇s equation,for strained silicon gate all around TFETs is proposed.The variation of the threshold voltage with device parameters,such as the strain（Ge mole fraction x）,gate oxide thickness,gate oxide permittivity,and channel length has also been investigated.The threshold voltage model is extracted using the peak transconductance method and is verified by good agreement with the results obtained from the TCAD simulation.展开更多
文摘There have been investigated reactive properties of silicon avalanche photodiodes （MAPD---micropixel avalanche photodiode） with deeply buried micropixels （amplification channels） within AC signal frequencies f = 50-500 kHz. By experiment it is found out that measured capacitance of structures involving three p-n junctions in section passing through the pixels increases exponentially with Ufor （negative potential is applying to n-Si substrate） reaches maximum and at certain value Ufor = Uinv changes the sign becoming the negative capacitance （equivalent inductance）. The magnitude of active component of complete conduction G grows with the applied voltage and reaches maximum value -70 mS at Ufor = 1.0 V （f = 500 kHz）. There has been calculated difference in phase tp appearing between current and voltage and it is shown that at Ufor = 0 V the q = 80 and passes through the zero at Ufor = 0.55 V. The magnitude of negative capacitance recalculated to the inductance value with the growth of forward bias being decreased sharply tends to the saturation.
基金Project supported by the National Natural Science Foundation of China(Grant No.61474085)
文摘Tunnel field effect transistors（TFETs） are promising devices for low power applications.An analytical threshold voltage model,based on the channel surface potential and electric field obtained by solving the 2D Poisson＇s equation,for strained silicon gate all around TFETs is proposed.The variation of the threshold voltage with device parameters,such as the strain（Ge mole fraction x）,gate oxide thickness,gate oxide permittivity,and channel length has also been investigated.The threshold voltage model is extracted using the peak transconductance method and is verified by good agreement with the results obtained from the TCAD simulation.
