The enhancement of mobility has always been a research focus in the field of thin-film transistors(TFTs).In this paper,we report a method using ultra-thin HfO2to improve the electrical performance of indium gallium zi...The enhancement of mobility has always been a research focus in the field of thin-film transistors(TFTs).In this paper,we report a method using ultra-thin HfO2to improve the electrical performance of indium gallium zinc oxide(IGZO)TFTs.HfO2not only repairs the surface morphology of the active layer,but also increases the carrier concentration.When the thickness of the HfO_(2) film was 3 nm,the mobility of the device was doubled(14.9 cm^(2)·V^(-1)·s^(-1)→29.6 cm^(2)·V^(-1)·s^(-1)),and the device exhibited excellent logic device performance.This paper provides a simple and effective method to enhance the electrical performance of IGZO TFTs,offering new ideas and experimental foundation for research into high-performance metal oxide(MO)TFTs.展开更多
This paper presents a 3 D.O.F haptic interface which is designed to meet the interaction requirement of teleoperation tasks and virtual reality applications. The mechanism design takes the operability into considerati...This paper presents a 3 D.O.F haptic interface which is designed to meet the interaction requirement of teleoperation tasks and virtual reality applications. The mechanism design takes the operability into consideration such as adopting steel cable as transmission component and mass balance to eliminate the gravity effect. The dynamics of haptic interface including actuating device is studied. In order to provide operator with fidelity kinesthetic information, a force controller using self-learning fuzzy logic control is designed. The simulation results verify the effectiveness of the control method.展开更多
Considerable efforts are currently being devoted to investigation of metal-organic, organic-organic and organic-inorganic interfaces relevant to organic electronic devices such as organic light emitting diode (OLEDs),...Considerable efforts are currently being devoted to investigation of metal-organic, organic-organic and organic-inorganic interfaces relevant to organic electronic devices such as organic light emitting diode (OLEDs), organic photovoltaic solar cells, organic field effect transistors (OFETs), organic spintronic devices and organic-based Write Once Read Many times (WORM) memory devices on both rigid and flexible substrates in laboratories around the world. The multilayer structure of these devices makes interfaces between dissimilar materials in contact and plays a prominent role in charge transport and injection efficiency which inevitably affect device performance. This paper presents results of an initial study on how switching between voltage thresholds and chemical surface treatment affects adhesion properties of a metal-organic (Au-PEDOT:PSS) contact interface in a WORM device. Contact and Tapping-mode Atomic Force Microscopy (AFM) gave surface topography, phase imaging and interface adhesion properties in addition to SEM/EDX imaging which showed that surface treatment, switching and surface roughness all appeared to be key factors in increasing interface adhesion with implications for increased device performance.展开更多
Efficient utilization of electrostatic charges is paramount for numerous applications,from printing to kinetic energy harvesting.However,existing technologies predominantly focus on the static qualities of these charg...Efficient utilization of electrostatic charges is paramount for numerous applications,from printing to kinetic energy harvesting.However,existing technologies predominantly focus on the static qualities of these charges,neglecting their dynamic capabilities as carriers for energy conversion.Herein,we report a paradigm-shifting strategy that orchestrates the swift transit of surface charges,generated through contact electrification,via a freely moving droplet.This technique ingeniously creates a bespoke charged surface which,in tandem with a droplet acting as a transfer medium to the ground,facilitates targeted charge displacement and amplifies electrical energy collection.The spontaneously generated electric field between the charged surface and needle tip,along with the enhanced water ionization under the electric field,proves pivotal in facilitating controlled charge transfer.By coupling the effects of charge self-transfer,contact electrification,and electrostatic induction,a dual-electrode droplet-driven(DD)triboelectric nanogenerator(TENG)is designed to harvest the water-related energy,exhibiting a two-orderof-magnitude improvement in electrical output compared to traditional single-electrode systems.Our strategy establishes a fundamental groundwork for efficient water drop energy acquisition,offering deep insights and substantial utility for future interdisciplinary research and applications in energy science.展开更多
Quadriplegia is a neuromuscular disease that may cause varying degrees of functional loss in trunk and limbs.In such cases,head movements can be used as an alternative communication channel.In this study,a human–mach...Quadriplegia is a neuromuscular disease that may cause varying degrees of functional loss in trunk and limbs.In such cases,head movements can be used as an alternative communication channel.In this study,a human–machine interface which is controlled by human head movements is designed and implemented.The proposed system enables users to steer the desired movement direction and to control the speed of an output device by using head movements.Head movements of the users are detected using a 6 DOF IMUs measuring three-axis accelerometer and three-axis gyroscope.The head movement axes and the Euler angles have been associated with movement direction and speed,respectively.To ensure driving safety,the speed of the system is determined by considering the speed requested by the user and the obstacle distance on the route.In this context,fuzzy logic algorithm is employed for closed-loop speed control according to distance sensors and reference speed data.A car model was used as the output device on the machine interface.However,the wireless communication between human and machine interfaces provides to adapt this system to any remote device or systems.The implemented system was tested by five subjects.Performance of the system was evaluated in terms of task completion times and feedback from the subjects about their experience with the system.Results indicate that the proposed system is easy to use;and the control capability and usage speed increase with user experience.The control speed is improved with the increase in user experience.展开更多
Increasing Internet of Things(IoT)device connectivity makes botnet attacks more dangerous,carrying catastrophic hazards.As IoT botnets evolve,their dynamic and multifaceted nature hampers conventional detection method...Increasing Internet of Things(IoT)device connectivity makes botnet attacks more dangerous,carrying catastrophic hazards.As IoT botnets evolve,their dynamic and multifaceted nature hampers conventional detection methods.This paper proposes a risk assessment framework based on fuzzy logic and Particle Swarm Optimization(PSO)to address the risks associated with IoT botnets.Fuzzy logic addresses IoT threat uncertainties and ambiguities methodically.Fuzzy component settings are optimized using PSO to improve accuracy.The methodology allows for more complex thinking by transitioning from binary to continuous assessment.Instead of expert inputs,PSO data-driven tunes rules and membership functions.This study presents a complete IoT botnet risk assessment system.The methodology helps security teams allocate resources by categorizing threats as high,medium,or low severity.This study shows how CICIoT2023 can assess cyber risks.Our research has implications beyond detection,as it provides a proactive approach to risk management and promotes the development of more secure IoT environments.展开更多
Spin logics have emerged as a promising avenue for the development of logic-in-memory architectures.In particular,the realization of XOR spin logic gates using a single spin-orbit torque device shows great potential f...Spin logics have emerged as a promising avenue for the development of logic-in-memory architectures.In particular,the realization of XOR spin logic gates using a single spin-orbit torque device shows great potential for low-power stateful logic circuits in the next generation.In this study,we successfully obtained the XOR logic gate by utilizing a spin-orbit torque device with a lateral interface,which was created by local ion implantation in the Ta/Pt/Co/Ta Hall device exhibiting perpendicular magnetic anisotropy.The angle of the lateral interface is set at 45°relative to the current direction,leading to the competition between symmetry breaking and current-driven Néel-type domain wall motion.Consequently,the field-free magnetic switching reversed is realized by the same sign of current amplitude at this interface.Based on this field-free magnetic switching behavior,we successfully proposed an XOR logic gate that could be implemented using only a single spin-orbit torque Hall device.This study provides a potentially viable approach toward efficient spin logics and in-memory computing architectures.展开更多
Aptamers are molecular recognition elements with high specificity that are selected from deoxyribonucleic acid/ribonucleic acid (DNA/RNA) library. Compared with the traditional protein recognition elements,aptamers ha...Aptamers are molecular recognition elements with high specificity that are selected from deoxyribonucleic acid/ribonucleic acid (DNA/RNA) library. Compared with the traditional protein recognition elements,aptamers have excellent properties such as cost-effective,stable,easy for synthesis and modification. In recent years,electrochemistry plays an important role in biosensor field because of its high sensitivity,high stability, fast response and easy miniaturization. Through the combination of these two technologies and our rational design,we constructed a series of biosensors and biochips that are simple,fast,cheap and miniaturized. Firstly,we designed an adenosine triphosphate (ATP) electrochemical biosensor based on the strand displacement strategy. We can detect as low as 10 nmol/L of ATP both in pure solution and complicated cell lysates. Secondly,we creatively split the aptamers into two fragments and constructed the sandwich assay platform only based on single aptamer sequence. We successfully transferred this design on biochips with multiple micro electrodes (6×6) and accomplished multiplex detection. In the fields of biochips and biocomputers,we designed several DNA logic gates with electric (electrochemical) signal as output which paves a new way for the development of DNA computer.展开更多
This paper discusses the validity of the urban interface dichotomy in the urban planning and scientific literature by means of a new approach and proposes a new model. Although the concept of “Urban Interface” (UI) ...This paper discusses the validity of the urban interface dichotomy in the urban planning and scientific literature by means of a new approach and proposes a new model. Although the concept of “Urban Interface” (UI) is discussed widely in the context of urban-rural and/or natural-artificial environment, UI has been used in the computer and communication disciplines, as well as in economy, geography, regional planning, city planning and architecture. UI has also been used in relation to electronic traffic control systems in urban transportation. UI between buildings and city is a relatively new issue in the literature. UI is defined with variant paradigms since the phenomenon is uncertain. This article reports on the use of fuzzy logic to create a kind of expert system for evaluating architectural elements in the context of UI. Fuzzy is the mathematical models of verbal expression on the area of specialization. This study is useful because this study shows a way to transform non-intuitive and precise concepts to the measurable and accurate results into a model. In order to create a model, the definition of UI in literature is evaluated and according to this evaluation a definition in terms of architecture is determined. The model of this new definition is created with using fuzzy logic using the Fuzzy Tec software. The predictions and experiences of a designer are represented in the model, which has been designed to behave like an expert person. Therefore, it has been shown that the definition of “expert system” can be added to architectural software. Lastly, a model that can give a fuzzy logic system for determining the quality of Urban Interface with sixteen parameters has been presented to the scientific field.展开更多
The front gate interface and oxide traps induced by hot carrier stress in SOI NMOSFETs are studied.Based on a new forward gated diode technique,the R G current originating from the front interface traps is me...The front gate interface and oxide traps induced by hot carrier stress in SOI NMOSFETs are studied.Based on a new forward gated diode technique,the R G current originating from the front interface traps is measured,and then the densities of the interface and oxide traps are separated independently.The experimental results show that the hot carrier stress of front channel not only results in the strong generation of the front interface traps,but also in the significant oxide traps.These two kinds of traps have similar characteristic in increasing with the hot carrier stress time.This analysis allows one to obtain a clear physical picture of the effects of the hot carrier stress on the generating of interface and oxide traps,which help to understand the degradation and reliability of the SOI MOSFETs.展开更多
A simple new method based on the measurement of charge pumping technique is proposed to separate and quantify experimentally the effects of oxide-trapped charges and interface-trapped charges on threshold voltage degr...A simple new method based on the measurement of charge pumping technique is proposed to separate and quantify experimentally the effects of oxide-trapped charges and interface-trapped charges on threshold voltage degradation in p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) under hot-carrier stress.Further,the experimental results verify the validness of this method.It is shown that,all three mechanisms of electron trapping effect,hole trapping effect and interface trap generation play important roles in p-channel MOSFETs degradation.It is noted that interface-trapped charge is still the dominant mechanism for hot-carrier-induced degradation in p-channel MOSFETs,while a significant contribution of oxide-trapped charge to threshold voltage is demonstrated and quantified.展开更多
Thermal spray, such as direct current （d.c.） plasma spray or radio frequency induced plasma spray, was used to deposit tungsten coatings on the copper electrodes of a tokamak device. The tungsten coating on the oute...Thermal spray, such as direct current （d.c.） plasma spray or radio frequency induced plasma spray, was used to deposit tungsten coatings on the copper electrodes of a tokamak device. The tungsten coating on the outer surface of one copper electrode was formed directly through d.c. plasma spraying of fine tungsten powder. The tungsten coating/lining on the inner surface of another copper electrode could be formed indirectly through induced plasma spraying of coarse tungsten powder. Scanning electron microscopy （SEM） was used to examine the cross section and the interface of the tungsten coating. Energy Dispersive Analysis of X-ray （EDAX） was used to analyze the metallic elements attached to a separated interface. The influence of the particle size of the tungsten powder on the density, cracking behavior and adhesion of the coating is discussed. It is found that the coarse tungsten powder with the particle size of 45-75μm can be melted and the coating can be formed only by using induced plasma. The coating deposited from the coarse powder has much higher cohesive strength, adhesive strength and crack resistance than the coating made from the fine powder with a particle size of 5μm.展开更多
Growth of a ZnO/GaN heterostructure is carried out using pulsed laser deposition. By etching the ZnO layer from the ZnO/GaN structure, the photoluminescence （PL） of the associated GaN layer shows that the donor- acc...Growth of a ZnO/GaN heterostructure is carried out using pulsed laser deposition. By etching the ZnO layer from the ZnO/GaN structure, the photoluminescence （PL） of the associated GaN layer shows that the donor- acceptor luminescence of CaN shifts to about 3.27eV, which is consistent with the electroluminescence （EL） of n-ZnO/p-GaN already reported. XPS shows that oxygen diffuses into the CaN crystal lattice from the surface to 20nm depth. The PL spectra at different temperatures and excitation densities show that oxygen plays the role of potential fluctuation. The associated PL results of the interface in these LEDs could be helpful to understand the mechanism of EL spectra for ZnO/CaN p-n junctions.展开更多
The total dose effect of ^(60)Co γ-rays on 0.8μm H-gate partially depleted-silicon-on-insulator NMOS devices was investigated at different irradiation doses. The results show that the shift in saturation current at ...The total dose effect of ^(60)Co γ-rays on 0.8μm H-gate partially depleted-silicon-on-insulator NMOS devices was investigated at different irradiation doses. The results show that the shift in saturation current at high dose rate is greater than that at low dose rate, due to increase in interface-state density with decreasing dose rate; the scattering effect of interface state on electrons in the channel causes degradation in carrier mobility; and the body current and transconductance of the back gate enhance low-doserate sensitivity when the irradiation is under OFF-bias. A double transconductance peak is observed at 3 kGy(Si)under high dose rates.展开更多
The effect of nitric oxide（NO） annealing on charge traps in the oxide insulator and transition layer in n-type4H–Si C metal–oxide–semiconductor（MOS） devices has been investigated using the time-dependent bias s...The effect of nitric oxide（NO） annealing on charge traps in the oxide insulator and transition layer in n-type4H–Si C metal–oxide–semiconductor（MOS） devices has been investigated using the time-dependent bias stress（TDBS）,capacitance–voltage（C–V）,and secondary ion mass spectroscopy（SIMS）.It is revealed that two main categories of charge traps,near interface oxide traps（Nniot） and oxide traps（Not）,have different responses to the TDBS and C–V characteristics in NO-annealed and Ar-annealed samples.The Nniotare mainly responsible for the hysteresis occurring in the bidirectional C–V characteristics,which are very close to the semiconductor interface and can readily exchange charges with the inner semiconductor.However,Not is mainly responsible for the TDBS induced C–V shifts.Electrons tunneling into the Not are hardly released quickly when suffering TDBS,resulting in the problem of the threshold voltage stability.Compared with the Ar-annealed sample,Nniotcan be significantly suppressed by the NO annealing,but there is little improvement of Not.SIMS results demonstrate that the Nniotare distributed within the transition layer,which correlated with the existence of the excess silicon.During the NO annealing process,the excess Si atoms incorporate into nitrogen in the transition layer,allowing better relaxation of the interface strain and effectively reducing the width of the transition layer and the density of Nniot.展开更多
Conducting polymer polydimethylsiloxane （PDMS） is studied for the high performance electrode of organic electroluminescence devices. A method to prepare the electrode consisting of a SiC thin film and PDMS is invest...Conducting polymer polydimethylsiloxane （PDMS） is studied for the high performance electrode of organic electroluminescence devices. A method to prepare the electrode consisting of a SiC thin film and PDMS is investigated. By using ultra thin SiC films with different thicknesses, the organic electroluminescence devices are obtained in an ultra vacuum system with the model device PDMS/SiC/PPV/Alq3, where PPV is poly para-phenylene vinylene and Alq3 is tris（S-hydroxyquinoline） aluminium. The capacitance voltage （C - V）, capacitance-frequency （C - F）, current-voltage （I - V）, radiation intensity-voltage （R - V） and luminance eFficiency-voltage （E - V） measurements are systematically studied to investigate the conductivity, Fermi alignment and devices properties in organic semiconductors. Scanning Kelvin probe measurement shows that the work function of PDMS/SiC anode with a 2.5-nm SiC over layer can be increased by as much as 0.28eV, compared to the conventional ITO anode. The result is attributed to the charge transfer effect and ohmic contacts at the interface.展开更多
Poly（3,4-ethylenedioxythiophene）：poly（styrenesulfonate）（PEDOT：PSS） is usually sandwiched between indium tin oxide（ITO） and a functional polymer in order to improve the performance of the device. However, bec...Poly（3,4-ethylenedioxythiophene）：poly（styrenesulfonate）（PEDOT：PSS） is usually sandwiched between indium tin oxide（ITO） and a functional polymer in order to improve the performance of the device. However, because of the strong acidic nature of PEDOT：PSS, the instability of the ITO/PEDOT：PSS interface is also observed. The mechanism of degradation of the device remains is unclear and needs to be further studied. In this article, we investigate the in-situ electrochromism of PEDOT：PSS to disclose the cause of the degradation. X-ray photoelectron spectroscopy（XPS） was used to characterize the PEDOT：PSS films, as well as the PEDOT：PSS plus polyethylene glycol（PEG） films with and without indium ions. The electrochromic devices（ECD） based on PEDOT：PSS and PEG with and without indium ions are carried out by in-situ micro-Raman and laser reflective measurement（LRM）. For comparison, ECD based on PEDOT：PSS and PEG films with LiCl, KCl, NaCl or InCl_3 are also investigated by LRM. The results show that PEDOT：PSS is further reduced when negatively biased, and oxidized when positively biased. This could identify that PEDOT：PSS with indium ions from PEDOT：PSS etching ITO will lose dopants when negatively biased. The LRM shows that the device with indium ions has a stronger effect on the reduction property of PEDOT：PSS-PEG film than the device without indium ions. The contrast of the former device is 44%, that of the latter device is about 3%. The LRM also shows that the contrasts of the device based on PEDOT：PSS＋PEG with LiCl, KCl, NaCl, InCl_3 are 30%, 27%, 15%, and 18%, respectively.展开更多
The theory of differential current switches which applies to the design of multivaluedECL circuits is introduced.In this theory,the switching state of differential transistor pairand signal in ECL circuits are describ...The theory of differential current switches which applies to the design of multivaluedECL circuits is introduced.In this theory,the switching state of differential transistor pairand signal in ECL circuits are described by switching variables and quaternary signal variables,respectively.he connection operations between the two kinds of variables are introduced todescribe the action process between switching element and signal in the circuits.Based on thistheory,two kinds of interface circuits-2-4 encoder and 4-2 decoder are designed.The computersimulation for the designed circuits by using SPICE program confirms that both circuits havecorrect logic functions,desired DO transfer characteristics and transient characteristics.Theseinterface circuits are compatible with binary circuits in the integrated process,the power supplyequipment,the logic stage and the transient characteristic.Therefore,they can be used as input-output interface of the existing binary ECL integrated circuits so as to decrease the number ofpins of a chip and the connections between chips.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.62441407)the Natural Science Basic Research Program of Shaanxi(Grant No.2024JCYBQN-0631)+1 种基金the Natural Science Foundation of Shaanxi Provincial Department of Education(Grant No.23JK0482)the Shaanxi Province Key R&D Program General Project-Industrial Field(Grant No.2024GX-YBXM-085)。
文摘The enhancement of mobility has always been a research focus in the field of thin-film transistors(TFTs).In this paper,we report a method using ultra-thin HfO2to improve the electrical performance of indium gallium zinc oxide(IGZO)TFTs.HfO2not only repairs the surface morphology of the active layer,but also increases the carrier concentration.When the thickness of the HfO_(2) film was 3 nm,the mobility of the device was doubled(14.9 cm^(2)·V^(-1)·s^(-1)→29.6 cm^(2)·V^(-1)·s^(-1)),and the device exhibited excellent logic device performance.This paper provides a simple and effective method to enhance the electrical performance of IGZO TFTs,offering new ideas and experimental foundation for research into high-performance metal oxide(MO)TFTs.
文摘This paper presents a 3 D.O.F haptic interface which is designed to meet the interaction requirement of teleoperation tasks and virtual reality applications. The mechanism design takes the operability into consideration such as adopting steel cable as transmission component and mass balance to eliminate the gravity effect. The dynamics of haptic interface including actuating device is studied. In order to provide operator with fidelity kinesthetic information, a force controller using self-learning fuzzy logic control is designed. The simulation results verify the effectiveness of the control method.
文摘Considerable efforts are currently being devoted to investigation of metal-organic, organic-organic and organic-inorganic interfaces relevant to organic electronic devices such as organic light emitting diode (OLEDs), organic photovoltaic solar cells, organic field effect transistors (OFETs), organic spintronic devices and organic-based Write Once Read Many times (WORM) memory devices on both rigid and flexible substrates in laboratories around the world. The multilayer structure of these devices makes interfaces between dissimilar materials in contact and plays a prominent role in charge transport and injection efficiency which inevitably affect device performance. This paper presents results of an initial study on how switching between voltage thresholds and chemical surface treatment affects adhesion properties of a metal-organic (Au-PEDOT:PSS) contact interface in a WORM device. Contact and Tapping-mode Atomic Force Microscopy (AFM) gave surface topography, phase imaging and interface adhesion properties in addition to SEM/EDX imaging which showed that surface treatment, switching and surface roughness all appeared to be key factors in increasing interface adhesion with implications for increased device performance.
基金supported by the Natural Science Foundation of Zhejiang Province(LZ22C130001)the National Natural Science Foundation of China(32171887,and 52002028,and 52192610)+1 种基金the National Key Research and Development Project from Minister of Science&Technology(2021YFA0202704)Beijing Municipal Science&Technology Commission(Z171100002017017).
文摘Efficient utilization of electrostatic charges is paramount for numerous applications,from printing to kinetic energy harvesting.However,existing technologies predominantly focus on the static qualities of these charges,neglecting their dynamic capabilities as carriers for energy conversion.Herein,we report a paradigm-shifting strategy that orchestrates the swift transit of surface charges,generated through contact electrification,via a freely moving droplet.This technique ingeniously creates a bespoke charged surface which,in tandem with a droplet acting as a transfer medium to the ground,facilitates targeted charge displacement and amplifies electrical energy collection.The spontaneously generated electric field between the charged surface and needle tip,along with the enhanced water ionization under the electric field,proves pivotal in facilitating controlled charge transfer.By coupling the effects of charge self-transfer,contact electrification,and electrostatic induction,a dual-electrode droplet-driven(DD)triboelectric nanogenerator(TENG)is designed to harvest the water-related energy,exhibiting a two-orderof-magnitude improvement in electrical output compared to traditional single-electrode systems.Our strategy establishes a fundamental groundwork for efficient water drop energy acquisition,offering deep insights and substantial utility for future interdisciplinary research and applications in energy science.
基金the Scientific and Technological Research Council of Turkey(TUBITAK).
文摘Quadriplegia is a neuromuscular disease that may cause varying degrees of functional loss in trunk and limbs.In such cases,head movements can be used as an alternative communication channel.In this study,a human–machine interface which is controlled by human head movements is designed and implemented.The proposed system enables users to steer the desired movement direction and to control the speed of an output device by using head movements.Head movements of the users are detected using a 6 DOF IMUs measuring three-axis accelerometer and three-axis gyroscope.The head movement axes and the Euler angles have been associated with movement direction and speed,respectively.To ensure driving safety,the speed of the system is determined by considering the speed requested by the user and the obstacle distance on the route.In this context,fuzzy logic algorithm is employed for closed-loop speed control according to distance sensors and reference speed data.A car model was used as the output device on the machine interface.However,the wireless communication between human and machine interfaces provides to adapt this system to any remote device or systems.The implemented system was tested by five subjects.Performance of the system was evaluated in terms of task completion times and feedback from the subjects about their experience with the system.Results indicate that the proposed system is easy to use;and the control capability and usage speed increase with user experience.The control speed is improved with the increase in user experience.
文摘Increasing Internet of Things(IoT)device connectivity makes botnet attacks more dangerous,carrying catastrophic hazards.As IoT botnets evolve,their dynamic and multifaceted nature hampers conventional detection methods.This paper proposes a risk assessment framework based on fuzzy logic and Particle Swarm Optimization(PSO)to address the risks associated with IoT botnets.Fuzzy logic addresses IoT threat uncertainties and ambiguities methodically.Fuzzy component settings are optimized using PSO to improve accuracy.The methodology allows for more complex thinking by transitioning from binary to continuous assessment.Instead of expert inputs,PSO data-driven tunes rules and membership functions.This study presents a complete IoT botnet risk assessment system.The methodology helps security teams allocate resources by categorizing threats as high,medium,or low severity.This study shows how CICIoT2023 can assess cyber risks.Our research has implications beyond detection,as it provides a proactive approach to risk management and promotes the development of more secure IoT environments.
基金financially supported by the Chinese Academy of Sciences (Nos.XDA18000000 and Y201926)the Youth Innovation Promotion Association of CAS (No.2020118)+1 种基金Beijing Municipal Natural Science Foundation (No.4244071)the Funding Support from Research Grants Council—Early Career Scheme (No.26200520)。
文摘Spin logics have emerged as a promising avenue for the development of logic-in-memory architectures.In particular,the realization of XOR spin logic gates using a single spin-orbit torque device shows great potential for low-power stateful logic circuits in the next generation.In this study,we successfully obtained the XOR logic gate by utilizing a spin-orbit torque device with a lateral interface,which was created by local ion implantation in the Ta/Pt/Co/Ta Hall device exhibiting perpendicular magnetic anisotropy.The angle of the lateral interface is set at 45°relative to the current direction,leading to the competition between symmetry breaking and current-driven Néel-type domain wall motion.Consequently,the field-free magnetic switching reversed is realized by the same sign of current amplitude at this interface.Based on this field-free magnetic switching behavior,we successfully proposed an XOR logic gate that could be implemented using only a single spin-orbit torque Hall device.This study provides a potentially viable approach toward efficient spin logics and in-memory computing architectures.
基金100 Talents Program of Chinese Academy of SciencesNational Key Basic Research Program of China ("973"Program) (No. 2012CB932600)
文摘Aptamers are molecular recognition elements with high specificity that are selected from deoxyribonucleic acid/ribonucleic acid (DNA/RNA) library. Compared with the traditional protein recognition elements,aptamers have excellent properties such as cost-effective,stable,easy for synthesis and modification. In recent years,electrochemistry plays an important role in biosensor field because of its high sensitivity,high stability, fast response and easy miniaturization. Through the combination of these two technologies and our rational design,we constructed a series of biosensors and biochips that are simple,fast,cheap and miniaturized. Firstly,we designed an adenosine triphosphate (ATP) electrochemical biosensor based on the strand displacement strategy. We can detect as low as 10 nmol/L of ATP both in pure solution and complicated cell lysates. Secondly,we creatively split the aptamers into two fragments and constructed the sandwich assay platform only based on single aptamer sequence. We successfully transferred this design on biochips with multiple micro electrodes (6×6) and accomplished multiplex detection. In the fields of biochips and biocomputers,we designed several DNA logic gates with electric (electrochemical) signal as output which paves a new way for the development of DNA computer.
文摘This paper discusses the validity of the urban interface dichotomy in the urban planning and scientific literature by means of a new approach and proposes a new model. Although the concept of “Urban Interface” (UI) is discussed widely in the context of urban-rural and/or natural-artificial environment, UI has been used in the computer and communication disciplines, as well as in economy, geography, regional planning, city planning and architecture. UI has also been used in relation to electronic traffic control systems in urban transportation. UI between buildings and city is a relatively new issue in the literature. UI is defined with variant paradigms since the phenomenon is uncertain. This article reports on the use of fuzzy logic to create a kind of expert system for evaluating architectural elements in the context of UI. Fuzzy is the mathematical models of verbal expression on the area of specialization. This study is useful because this study shows a way to transform non-intuitive and precise concepts to the measurable and accurate results into a model. In order to create a model, the definition of UI in literature is evaluated and according to this evaluation a definition in terms of architecture is determined. The model of this new definition is created with using fuzzy logic using the Fuzzy Tec software. The predictions and experiences of a designer are represented in the model, which has been designed to behave like an expert person. Therefore, it has been shown that the definition of “expert system” can be added to architectural software. Lastly, a model that can give a fuzzy logic system for determining the quality of Urban Interface with sixteen parameters has been presented to the scientific field.
文摘The front gate interface and oxide traps induced by hot carrier stress in SOI NMOSFETs are studied.Based on a new forward gated diode technique,the R G current originating from the front interface traps is measured,and then the densities of the interface and oxide traps are separated independently.The experimental results show that the hot carrier stress of front channel not only results in the strong generation of the front interface traps,but also in the significant oxide traps.These two kinds of traps have similar characteristic in increasing with the hot carrier stress time.This analysis allows one to obtain a clear physical picture of the effects of the hot carrier stress on the generating of interface and oxide traps,which help to understand the degradation and reliability of the SOI MOSFETs.
文摘A simple new method based on the measurement of charge pumping technique is proposed to separate and quantify experimentally the effects of oxide-trapped charges and interface-trapped charges on threshold voltage degradation in p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) under hot-carrier stress.Further,the experimental results verify the validness of this method.It is shown that,all three mechanisms of electron trapping effect,hole trapping effect and interface trap generation play important roles in p-channel MOSFETs degradation.It is noted that interface-trapped charge is still the dominant mechanism for hot-carrier-induced degradation in p-channel MOSFETs,while a significant contribution of oxide-trapped charge to threshold voltage is demonstrated and quantified.
基金supported by the Canadian Fusion Fuels Technology Project
文摘Thermal spray, such as direct current （d.c.） plasma spray or radio frequency induced plasma spray, was used to deposit tungsten coatings on the copper electrodes of a tokamak device. The tungsten coating on the outer surface of one copper electrode was formed directly through d.c. plasma spraying of fine tungsten powder. The tungsten coating/lining on the inner surface of another copper electrode could be formed indirectly through induced plasma spraying of coarse tungsten powder. Scanning electron microscopy （SEM） was used to examine the cross section and the interface of the tungsten coating. Energy Dispersive Analysis of X-ray （EDAX） was used to analyze the metallic elements attached to a separated interface. The influence of the particle size of the tungsten powder on the density, cracking behavior and adhesion of the coating is discussed. It is found that the coarse tungsten powder with the particle size of 45-75μm can be melted and the coating can be formed only by using induced plasma. The coating deposited from the coarse powder has much higher cohesive strength, adhesive strength and crack resistance than the coating made from the fine powder with a particle size of 5μm.
基金by the Natural Science Foundation of Anhui Province under Grant Nos 070414184 and 070412034.
文摘Growth of a ZnO/GaN heterostructure is carried out using pulsed laser deposition. By etching the ZnO layer from the ZnO/GaN structure, the photoluminescence （PL） of the associated GaN layer shows that the donor- acceptor luminescence of CaN shifts to about 3.27eV, which is consistent with the electroluminescence （EL） of n-ZnO/p-GaN already reported. XPS shows that oxygen diffuses into the CaN crystal lattice from the surface to 20nm depth. The PL spectra at different temperatures and excitation densities show that oxygen plays the role of potential fluctuation. The associated PL results of the interface in these LEDs could be helpful to understand the mechanism of EL spectra for ZnO/CaN p-n junctions.
基金supported by the National Natural Science Foundation of China(No.61376099)the Foundation for Fundamental Research of China(No.JSZL2016110B003)the Major Fundamental Research Program of Shaanxi(No.2017ZDJC-26)
文摘The total dose effect of ^(60)Co γ-rays on 0.8μm H-gate partially depleted-silicon-on-insulator NMOS devices was investigated at different irradiation doses. The results show that the shift in saturation current at high dose rate is greater than that at low dose rate, due to increase in interface-state density with decreasing dose rate; the scattering effect of interface state on electrons in the channel causes degradation in carrier mobility; and the body current and transconductance of the back gate enhance low-doserate sensitivity when the irradiation is under OFF-bias. A double transconductance peak is observed at 3 kGy(Si)under high dose rates.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61404098 and 61274079)the Doctoral Fund of Ministry of Education of China(Grant No.20130203120017)+2 种基金the National Key Basic Research Program of China(Grant No.2015CB759600)the National Grid Science&Technology Project,China(Grant No.SGRI-WD-71-14-018)the Key Specific Project in the National Science&Technology Program,China(Grant Nos.2013ZX02305002-002 and 2015CB759600)
文摘The effect of nitric oxide（NO） annealing on charge traps in the oxide insulator and transition layer in n-type4H–Si C metal–oxide–semiconductor（MOS） devices has been investigated using the time-dependent bias stress（TDBS）,capacitance–voltage（C–V）,and secondary ion mass spectroscopy（SIMS）.It is revealed that two main categories of charge traps,near interface oxide traps（Nniot） and oxide traps（Not）,have different responses to the TDBS and C–V characteristics in NO-annealed and Ar-annealed samples.The Nniotare mainly responsible for the hysteresis occurring in the bidirectional C–V characteristics,which are very close to the semiconductor interface and can readily exchange charges with the inner semiconductor.However,Not is mainly responsible for the TDBS induced C–V shifts.Electrons tunneling into the Not are hardly released quickly when suffering TDBS,resulting in the problem of the threshold voltage stability.Compared with the Ar-annealed sample,Nniotcan be significantly suppressed by the NO annealing,but there is little improvement of Not.SIMS results demonstrate that the Nniotare distributed within the transition layer,which correlated with the existence of the excess silicon.During the NO annealing process,the excess Si atoms incorporate into nitrogen in the transition layer,allowing better relaxation of the interface strain and effectively reducing the width of the transition layer and the density of Nniot.
基金Supported by the Hunan Province Natural Science Foundation of China under Grant No 06JJ20034.
文摘Conducting polymer polydimethylsiloxane （PDMS） is studied for the high performance electrode of organic electroluminescence devices. A method to prepare the electrode consisting of a SiC thin film and PDMS is investigated. By using ultra thin SiC films with different thicknesses, the organic electroluminescence devices are obtained in an ultra vacuum system with the model device PDMS/SiC/PPV/Alq3, where PPV is poly para-phenylene vinylene and Alq3 is tris（S-hydroxyquinoline） aluminium. The capacitance voltage （C - V）, capacitance-frequency （C - F）, current-voltage （I - V）, radiation intensity-voltage （R - V） and luminance eFficiency-voltage （E - V） measurements are systematically studied to investigate the conductivity, Fermi alignment and devices properties in organic semiconductors. Scanning Kelvin probe measurement shows that the work function of PDMS/SiC anode with a 2.5-nm SiC over layer can be increased by as much as 0.28eV, compared to the conventional ITO anode. The result is attributed to the charge transfer effect and ohmic contacts at the interface.
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2015AA034201)the Chinese Universities Scientific Fund(Grant No.2015LX002)
文摘Poly（3,4-ethylenedioxythiophene）：poly（styrenesulfonate）（PEDOT：PSS） is usually sandwiched between indium tin oxide（ITO） and a functional polymer in order to improve the performance of the device. However, because of the strong acidic nature of PEDOT：PSS, the instability of the ITO/PEDOT：PSS interface is also observed. The mechanism of degradation of the device remains is unclear and needs to be further studied. In this article, we investigate the in-situ electrochromism of PEDOT：PSS to disclose the cause of the degradation. X-ray photoelectron spectroscopy（XPS） was used to characterize the PEDOT：PSS films, as well as the PEDOT：PSS plus polyethylene glycol（PEG） films with and without indium ions. The electrochromic devices（ECD） based on PEDOT：PSS and PEG with and without indium ions are carried out by in-situ micro-Raman and laser reflective measurement（LRM）. For comparison, ECD based on PEDOT：PSS and PEG films with LiCl, KCl, NaCl or InCl_3 are also investigated by LRM. The results show that PEDOT：PSS is further reduced when negatively biased, and oxidized when positively biased. This could identify that PEDOT：PSS with indium ions from PEDOT：PSS etching ITO will lose dopants when negatively biased. The LRM shows that the device with indium ions has a stronger effect on the reduction property of PEDOT：PSS-PEG film than the device without indium ions. The contrast of the former device is 44%, that of the latter device is about 3%. The LRM also shows that the contrasts of the device based on PEDOT：PSS＋PEG with LiCl, KCl, NaCl, InCl_3 are 30%, 27%, 15%, and 18%, respectively.
基金The project is supported by Zhejiang Provincial Natural Science Fund of China
文摘The theory of differential current switches which applies to the design of multivaluedECL circuits is introduced.In this theory,the switching state of differential transistor pairand signal in ECL circuits are described by switching variables and quaternary signal variables,respectively.he connection operations between the two kinds of variables are introduced todescribe the action process between switching element and signal in the circuits.Based on thistheory,two kinds of interface circuits-2-4 encoder and 4-2 decoder are designed.The computersimulation for the designed circuits by using SPICE program confirms that both circuits havecorrect logic functions,desired DO transfer characteristics and transient characteristics.Theseinterface circuits are compatible with binary circuits in the integrated process,the power supplyequipment,the logic stage and the transient characteristic.Therefore,they can be used as input-output interface of the existing binary ECL integrated circuits so as to decrease the number ofpins of a chip and the connections between chips.
