A diamond single crystal, which was synthesized at a high temperature of 1570 K and a high pressure of 5.5 GPa in a Fe-Ni-C system, was directly and systematically examined by transmission electron microscopy (TEM). I...A diamond single crystal, which was synthesized at a high temperature of 1570 K and a high pressure of 5.5 GPa in a Fe-Ni-C system, was directly and systematically examined by transmission electron microscopy (TEM). It is proposed that there exists a variety of imperfections such as dislocation loops, stacking faults, twins and stacking-fault tetrahedral in the diamond, which may be derived from the supersaturated vacancies generated during rapid cooling from high temperature. The formation process of the imperfections is discussed briefly.展开更多
文摘A diamond single crystal, which was synthesized at a high temperature of 1570 K and a high pressure of 5.5 GPa in a Fe-Ni-C system, was directly and systematically examined by transmission electron microscopy (TEM). It is proposed that there exists a variety of imperfections such as dislocation loops, stacking faults, twins and stacking-fault tetrahedral in the diamond, which may be derived from the supersaturated vacancies generated during rapid cooling from high temperature. The formation process of the imperfections is discussed briefly.
