A 10-bit ratio-independent switch-capacitor（SC） cyclic analog-to-digital converter（ADC） with offset cancelingforaCMOSimagesensorispresented.TheproposedADCcompletesanN-bitconversionin1.5N clock cycles with one oper...A 10-bit ratio-independent switch-capacitor（SC） cyclic analog-to-digital converter（ADC） with offset cancelingforaCMOSimagesensorispresented.TheproposedADCcompletesanN-bitconversionin1.5N clock cycles with one operational amplifier. Combining ratio-independent and polarity swapping techniques, the conversioncharacteristicoftheproposedcyclicADCisinherentlyinsensitivebothtocapacitorratioandtoamplifieroffset voltage. Therefore, the circuit can be realized in a small die area and it is suitable to serve as the column-parallel ADC in CMOS image sensors. A prototype ADC is fabricated in 0.18- m one-poly four-metal CMOS technology.The measured results indicate that the ADC has a signal-to-noise and distortion ratio（SNDR） of 53.6 dB and a DNL of C0：12/0：14 LSB at a conversion rate of 600 kS/s. The standard deviation of the offset variation of the ADC is reduced from 2.5 LSB to 0.5 LSB. Its power dissipation is 250 W with a 1.8 V supply, and its area is0.030.8 mm2.展开更多
Goafs are threats to safe mining.Their imaging effects or those of other complex geological bodies are often poor in conventional reflected wave images.Hence,accurate detection of goafs has become an important problem...Goafs are threats to safe mining.Their imaging effects or those of other complex geological bodies are often poor in conventional reflected wave images.Hence,accurate detection of goafs has become an important problem,to be solved with a sense of urgency.Based on scattering theory,we used an equivalent offset method to extract Common Scattering Point gathers,in order to analyze different scattering wave characteristics between Common Scattering Point and Common Mid Point gathers and to compare stack and migration imaging effects.Our research results show that the scattering wave imaging method is more efficient than the conventional imaging method and is therefore a more effective imaging method for detecting goafs and other complex geological bodies.It has important implications for safe mining procedures and infrastructures.展开更多
This paper presents a high-speed column-parallel cyclic analog-to-digital converter（ADC） for a CMOS image sensor.A correlated double sampling（CDS） circuit is integrated in the ADC,which avoids a stand-alone CDS ci...This paper presents a high-speed column-parallel cyclic analog-to-digital converter（ADC） for a CMOS image sensor.A correlated double sampling（CDS） circuit is integrated in the ADC,which avoids a stand-alone CDS circuit block.An offset cancellation technique is also introduced,which reduces the column fixed-pattern noise（FPN） effectively.One single channel ADC with an area less than 0.02 mm^2 was implemented in a 0.13μm CMOS image sensor process.The resolution of the proposed ADC is 10-bit,and the conversion rate is 1.6 MS/s. The measured differential nonlinearity and integral nonlinearity are 0.89 LSB and 6.2 LSB together with CDS, respectively.The power consumption from 3.3 V supply is only 0.66 mW.An array of 48 10-bit column-parallel cyclic ADCs was integrated into an array of CMOS image sensor pixels.The measured results indicated that the ADC circuit is suitable for high-speed CMOS image sensors.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.61234003,61274021)
文摘A 10-bit ratio-independent switch-capacitor（SC） cyclic analog-to-digital converter（ADC） with offset cancelingforaCMOSimagesensorispresented.TheproposedADCcompletesanN-bitconversionin1.5N clock cycles with one operational amplifier. Combining ratio-independent and polarity swapping techniques, the conversioncharacteristicoftheproposedcyclicADCisinherentlyinsensitivebothtocapacitorratioandtoamplifieroffset voltage. Therefore, the circuit can be realized in a small die area and it is suitable to serve as the column-parallel ADC in CMOS image sensors. A prototype ADC is fabricated in 0.18- m one-poly four-metal CMOS technology.The measured results indicate that the ADC has a signal-to-noise and distortion ratio（SNDR） of 53.6 dB and a DNL of C0：12/0：14 LSB at a conversion rate of 600 kS/s. The standard deviation of the offset variation of the ADC is reduced from 2.5 LSB to 0.5 LSB. Its power dissipation is 250 W with a 1.8 V supply, and its area is0.030.8 mm2.
基金Financial support for this work,provided by the Key National Project(No.2008ZX05035)the State Science and Technology Support Program,the National Natural Science Foundation of China (Nos.40574057,40874054,40804026)the State Basic Research and Development Program of China(No.2007CB209406)
文摘Goafs are threats to safe mining.Their imaging effects or those of other complex geological bodies are often poor in conventional reflected wave images.Hence,accurate detection of goafs has become an important problem,to be solved with a sense of urgency.Based on scattering theory,we used an equivalent offset method to extract Common Scattering Point gathers,in order to analyze different scattering wave characteristics between Common Scattering Point and Common Mid Point gathers and to compare stack and migration imaging effects.Our research results show that the scattering wave imaging method is more efficient than the conventional imaging method and is therefore a more effective imaging method for detecting goafs and other complex geological bodies.It has important implications for safe mining procedures and infrastructures.
基金supported by the National Natural Science Foundation of China(Nos.60976023,61234003)the Special Funds for Major State Basic Research Project of China(No.2011CB932902)
文摘This paper presents a high-speed column-parallel cyclic analog-to-digital converter（ADC） for a CMOS image sensor.A correlated double sampling（CDS） circuit is integrated in the ADC,which avoids a stand-alone CDS circuit block.An offset cancellation technique is also introduced,which reduces the column fixed-pattern noise（FPN） effectively.One single channel ADC with an area less than 0.02 mm^2 was implemented in a 0.13μm CMOS image sensor process.The resolution of the proposed ADC is 10-bit,and the conversion rate is 1.6 MS/s. The measured differential nonlinearity and integral nonlinearity are 0.89 LSB and 6.2 LSB together with CDS, respectively.The power consumption from 3.3 V supply is only 0.66 mW.An array of 48 10-bit column-parallel cyclic ADCs was integrated into an array of CMOS image sensor pixels.The measured results indicated that the ADC circuit is suitable for high-speed CMOS image sensors.
