A novel current-mode voltage reference circuit which is capable of generating sub- 1 V output voltage is presented. The proposed architecture exhibits the inherent curvature compensation ability. The curvature com- pe...A novel current-mode voltage reference circuit which is capable of generating sub- 1 V output voltage is presented. The proposed architecture exhibits the inherent curvature compensation ability. The curvature com- pensation is achieved by utilizing the non-linear behavior of gate coupling coefficient to compensate non-linear temperature dependence of base-emitter voltage. We have also utilized the developments in CMOS process to re- duce power and area consumption. The proposed voltage reference is analyzed theoretically and compared with other existing methods. The circuit is designed and simulated in 180 nm mixed-mode CMOS UMC technology which gives a reference level of 246 mV. The minimum required supply voltage is 1 V with maximum current drawn of 9.24μA. A temperature coefficient of 9 ppm/℃ is achieved over -25 to 125 ℃ temperature range. The reference voltage varies by ±11 mV across process corners. The reference circuit shows the line sensitivity of 0.9 mV/V with area consumption of 100 × ll0μm2展开更多
基金support from SMDP program, MCIT, Government of India, for providing lab facilities
文摘A novel current-mode voltage reference circuit which is capable of generating sub- 1 V output voltage is presented. The proposed architecture exhibits the inherent curvature compensation ability. The curvature com- pensation is achieved by utilizing the non-linear behavior of gate coupling coefficient to compensate non-linear temperature dependence of base-emitter voltage. We have also utilized the developments in CMOS process to re- duce power and area consumption. The proposed voltage reference is analyzed theoretically and compared with other existing methods. The circuit is designed and simulated in 180 nm mixed-mode CMOS UMC technology which gives a reference level of 246 mV. The minimum required supply voltage is 1 V with maximum current drawn of 9.24μA. A temperature coefficient of 9 ppm/℃ is achieved over -25 to 125 ℃ temperature range. The reference voltage varies by ±11 mV across process corners. The reference circuit shows the line sensitivity of 0.9 mV/V with area consumption of 100 × ll0μm2
