Commutation failure(CF)is an inherent problem faced by line commutated converter high voltage direct current(LCC-HVDC)technology.To completely solve the problem of CF,we have proposed a novel hybrid commutated convert...Commutation failure(CF)is an inherent problem faced by line commutated converter high voltage direct current(LCC-HVDC)technology.To completely solve the problem of CF,we have proposed a novel hybrid commutated converter(HCC)technology based on reverse blocking integrated gate commutated thyristor,which can utilise two methods for commutation:enhanced grid voltage commutation and active turn-off forced com-mutation.In this paper,the topology and operating principle of HCC are proposed.Then,the control and protection strategy is designed based on the current variation trend under AC faults.To verify the effectiveness of HCC in mitigating CF,a 120-kV/360-MW HCC-HVDC model is built in PSCAD/EMTDC,adopting LCC at the rectifier side and HCC at the inverter side.Based on this model,HCC steady-state and fault transient stresses are analysed.Various AC faults are simulated and the performance of HCC-HVDC is compared with LCC-HVDC.Finally,the results show that the HCC topol-ogy and proposed control strategy can solve CF under all fault conditions with almost the same attributes as LCC,such as large capacity,low cost,low loss and high reliability,which is meaningful for the application of HCC to the HVDC transmission system.展开更多
This paper presents a fully customised integrated gate commutated thyristor(IGCT)gate driver monolithic integrated circuit(GDMIC),aiming to address the many shortcomings of traditional IGCT gate driver units composed ...This paper presents a fully customised integrated gate commutated thyristor(IGCT)gate driver monolithic integrated circuit(GDMIC),aiming to address the many shortcomings of traditional IGCT gate driver units composed of discrete components,such as the excessive number of components,low reliability,and complex development processes.The current-source driving characteristics of IGCTs pose significant technical challenges for developing fully customised integrated circuits(IC).The customised requirements of IGCT gate driver chips under various operating conditions are explored regarding functional module division,power sequencing,and chip parameter specifications.However,existing high-side(HS)driver methods exhibit limitations in functional monolithic integration and bipolar complementary metal-oxide-semiconductor compat-ibility.To address these challenges,a novel HS driving topology based on floating linear regulators is proposed.It can achieve synchronised control of multi-channel floating power transistors while supporting 100%duty cycle continuous conduction.The pro-posed GDMIC reduces the three independent HS power supplies to a single multiplexed topology,significantly decreasing circuit complexity.Experimental results validate the feasibility and performance of a 4-inch gate driver prototype based on IGCT current-source management IC,demonstrating significant advantages in reducing the number of components,enhancing device reliability,and simplifying development.The proposed GDMIC offers an innovative development path for future high-power IGCT drivers.展开更多
Presented is design concept for key parameters o f the reverse conducting gate commutated thyristor (RC-GCT),such as the thickness and concentration of n-base region and the transparent anode region,and the wi dth o...Presented is design concept for key parameters o f the reverse conducting gate commutated thyristor (RC-GCT),such as the thickness and concentration of n-base region and the transparent anode region,and the wi dth of separation region between asymmetric GCT and PIN diode.A structure model of the RC-GCT is set up based on the design concept and its characteristics are analyzed.The simulation results show the design concept is reasonable.展开更多
基金National Natural Science Foundation of China-State Grid Corporation Joint Fund for Smart Grid,Grant/Award Number:U2166602。
文摘Commutation failure(CF)is an inherent problem faced by line commutated converter high voltage direct current(LCC-HVDC)technology.To completely solve the problem of CF,we have proposed a novel hybrid commutated converter(HCC)technology based on reverse blocking integrated gate commutated thyristor,which can utilise two methods for commutation:enhanced grid voltage commutation and active turn-off forced com-mutation.In this paper,the topology and operating principle of HCC are proposed.Then,the control and protection strategy is designed based on the current variation trend under AC faults.To verify the effectiveness of HCC in mitigating CF,a 120-kV/360-MW HCC-HVDC model is built in PSCAD/EMTDC,adopting LCC at the rectifier side and HCC at the inverter side.Based on this model,HCC steady-state and fault transient stresses are analysed.Various AC faults are simulated and the performance of HCC-HVDC is compared with LCC-HVDC.Finally,the results show that the HCC topol-ogy and proposed control strategy can solve CF under all fault conditions with almost the same attributes as LCC,such as large capacity,low cost,low loss and high reliability,which is meaningful for the application of HCC to the HVDC transmission system.
基金National Key Research and Development Program of China,Grant/Award Number:2021YFB2401604The Integration Projects of National Natural Science Foundation of China-State Grid Joint Fund for Smart Grid,Grant/Award Number:U2166602National Natural Science Foundation of China,Grant/Award Number:52241701。
文摘This paper presents a fully customised integrated gate commutated thyristor(IGCT)gate driver monolithic integrated circuit(GDMIC),aiming to address the many shortcomings of traditional IGCT gate driver units composed of discrete components,such as the excessive number of components,low reliability,and complex development processes.The current-source driving characteristics of IGCTs pose significant technical challenges for developing fully customised integrated circuits(IC).The customised requirements of IGCT gate driver chips under various operating conditions are explored regarding functional module division,power sequencing,and chip parameter specifications.However,existing high-side(HS)driver methods exhibit limitations in functional monolithic integration and bipolar complementary metal-oxide-semiconductor compat-ibility.To address these challenges,a novel HS driving topology based on floating linear regulators is proposed.It can achieve synchronised control of multi-channel floating power transistors while supporting 100%duty cycle continuous conduction.The pro-posed GDMIC reduces the three independent HS power supplies to a single multiplexed topology,significantly decreasing circuit complexity.Experimental results validate the feasibility and performance of a 4-inch gate driver prototype based on IGCT current-source management IC,demonstrating significant advantages in reducing the number of components,enhancing device reliability,and simplifying development.The proposed GDMIC offers an innovative development path for future high-power IGCT drivers.
文摘Presented is design concept for key parameters o f the reverse conducting gate commutated thyristor (RC-GCT),such as the thickness and concentration of n-base region and the transparent anode region,and the wi dth of separation region between asymmetric GCT and PIN diode.A structure model of the RC-GCT is set up based on the design concept and its characteristics are analyzed.The simulation results show the design concept is reasonable.
