In this paper the fabrication technique of amorphous SnO2：（Zn, In） film is presented. The transmittance and gap-states distribution of the film are given. The experimental results of gap-states distribution are com...In this paper the fabrication technique of amorphous SnO2：（Zn, In） film is presented. The transmittance and gap-states distribution of the film are given. The experimental results of gap-states distribution are compared with the calculated results by using the facts of short range order and lattice vacancy defect of the gap states theory. The distribution of gap state has been proved to be discontinuous due to the short-range order of amorphous structure.展开更多
Given the demand for constantly scaling micro- electronic devices to ever smaller dimensions, a SiO2 gate dielectric was substituted with a higher dielectric-constant material, Hf（Zr）O2, in order to minimize current...Given the demand for constantly scaling micro- electronic devices to ever smaller dimensions, a SiO2 gate dielectric was substituted with a higher dielectric-constant material, Hf（Zr）O2, in order to minimize current leakage through dielectric thin film. However, upon interfacing with high dielectric constant （high-κ） dielectrics, the electron mobility in the conventional Si channel degrades due to Coulomb scattering, surface-roughness scattering, remotephonon scattering, and dielectric-charge trapping.Ⅲ-Ⅴ and Ge are two promising candidates with superior mobility over Si. Nevertheless, Hf（Zr）O2/Ⅲ-Ⅴ（Ge） has much more complicated interface bonding than Si-based interfaces. Successful fabrication of a high-quality device critically depends on understanding and engineering the bonding configurations at Hf（Zr）O2/Ⅲ-Ⅴ（Ge） interfaces for the optimal design of device interfaces. Thus, an accurate atomic insight into the interface bonding and mechanism of interface gap states formation becomes essential. Here, we utilize first- principle calculations to investigate the interface between HfO2 and GaAs. Our study shows that As--As dimer bonding, Ga partial oxidation （between 3＋ and 1＋） and Ga- dangling bonds constitute the major contributions to gap states. These findings provide insightful guidance for optimum interface passivation.展开更多
The optical reflectance and transmittance spectra in the wavelength range of 300-2500 nm are used to compute the absorption coefficient of zinc oxide films annealed at different post-annealing temperatures 400, 500 an...The optical reflectance and transmittance spectra in the wavelength range of 300-2500 nm are used to compute the absorption coefficient of zinc oxide films annealed at different post-annealing temperatures 400, 500 and 600°C.The values of the cross point between the curves of the real and imaginary parts of the optical conductivity ɑ_1 and ɑ_1 with energy axis of films exhibit values that correspond to optical gaps and are about 3.25-3.3 eV. The maxima of peaks in plots dR/dλ and dT/dλ versus wavelength of films exhibit optical gaps at about 3.12-3.25 eV.The values of the fundamental indirect band gap obtained from the Tauc model are at about 3.14-3.2 eV. It can be seen that films annealed at 600°C have the minimum indirect optical band gap at about 3.15 eV. The films annealed at 600°C have Urbach＇s energy minimum of 1.38 eV and hence have minimum disorder. The dispersion energy d of films annealed at 500°C has the minimum value of 43 eV.展开更多
Superconducting elect rides have attracted growing attention for their potential to achieve high superconducting transition temperatures(T_(C))under pressure.However,many known elect rides are chemically reactive and ...Superconducting elect rides have attracted growing attention for their potential to achieve high superconducting transition temperatures(T_(C))under pressure.However,many known elect rides are chemically reactive and unstable,making high-quality single-crystal growth,characterization,and measurements difficult,and most do not exhibit superconductivity at ambient pressure.In contrast,La_(3) In stands out for its ambient-pressure superconductivity(T_(C)∼9.4 K)and the availability of high-quality single crystals.Here,we investigate its low-energy electronic structure using angle-resolved photoemission spectroscopy and first-principles calculations.The bands near the Fermi energy(E_(F))are mainly derived from La 5d and In 5p orbitals.A saddle point is directly observed at the Brillouin zone(BZ)boundary,while a three-dimensional Van Hove singularity crosses E_(F) at the BZ corner.First-principles calculations further reveal topological Dirac surface states within the bulk energy gap above E_(F).The coexistence of a high density of states and in-gap topological surface states near𝐸F suggests that La3In offers a promising platform for tuning superconductivity and exploring possible topological superconducting phases through doping or external pressure.展开更多
Hole-net structure silicon is fabricated by laser irradiation and annealing, on which a photoluminescence （PL） band in a the region of 650-750 nm is pinned and its intensity increases obviously after oxidation. It i...Hole-net structure silicon is fabricated by laser irradiation and annealing, on which a photoluminescence （PL） band in a the region of 650-750 nm is pinned and its intensity increases obviously after oxidation. It is found that the PL intensity changes with both laser irradiation time and annealing time. Calculations show that some localized states appear in the band gap of the smaller nanocrystal when Silo bonds or Si-O-Si bonds are passivated on the surface. It is discovered that the density and the number of Si=O bonds or Si-O-Si bonds related to both the irradiation time and the annealing time obviously affect the generation of the localized gap states of hole-net silicon, by which the production of stimulated emission through controlling oxidation time can be explained.展开更多
The increasingly widening income gap between urban and rural areas is affected by many factors. Using the stepwise regression analysis,we find that urbanization level,socio-economic development,education level,financi...The increasingly widening income gap between urban and rural areas is affected by many factors. Using the stepwise regression analysis,we find that urbanization level,socio-economic development,education level,financial development scale and financial development efficiency have the greatest impact on the income gap between urban and rural areas. By cointegration test,it is found that there is a long-term equilibrium relationship between these five variables and the income gap between urban and rural areas. We build the state-space model to research the dynamic impact of these factors on the income gap between urban and rural areas. The results show that by improving the level of urbanization,we can effectively narrow the income gap between urban and rural areas,while socio-economic development,the improvement of education level,expansion of financial development scale and financial development efficiency all significantly expand the income gap between urban and rural areas.展开更多
In graphene,conductance electrons behave as massless relativistic particles and obey an analogue of the Dirac equation in two dimensions with a chiral nature.For this reason,the bounding of electrons in graphene in th...In graphene,conductance electrons behave as massless relativistic particles and obey an analogue of the Dirac equation in two dimensions with a chiral nature.For this reason,the bounding of electrons in graphene in the form of geometries of quantum dots is impossible.In gapless graphene,due to its unique electronic band structure,there is a minimal conductivity at Dirac points,that is,in the limit of zero doping.This creates a problem for using such a highly motivated new material in electronic devices.One of the ways to overcome this problem is the creation of a band gap in the graphene band structure,which is made by inversion symmetry breaking（symmetry of sublattices）.We investigate the confined states of the massless Dirac fermions in an impured graphene by the short-range perturbations for ＂local chemical potential＂ and ＂local gap＂.The calculated energy spectrum exhibits quite different features with and without the perturbations.A characteristic equation for bound states（BSs） has been obtained.It is surprisingly found that the relation between the radial functions of sublattices wave functions,i.e.,f_m~＋（r）,g_m~＋（r）,and f_m^-（r）,g_m^-（r）,can be established by SO（2） group.展开更多
Condense matter methods and mathematical models used in solving problems in solid state physics are transformed to high energy quantum cosmology in order to estimate the magnitude of the missing dark energy of the uni...Condense matter methods and mathematical models used in solving problems in solid state physics are transformed to high energy quantum cosmology in order to estimate the magnitude of the missing dark energy of the universe. Looking at the problem from this novel viewpoint was rewarded by a rather unexpected result, namely that the gap labelling method of integrated density of states for three dimensional icosahedral quasicrystals is identical to the previously measured and theoretically concluded ordinary energy density of the universe, namely a mere 4.5 percent of Einstein’s energy density, i.e. E(O) = mc2/22 where E is the energy, m is the mass and c is the speed of light. Consequently we conclude that the missing dark energy density must be E(D) = 1 - E(O) = mc2(21/22) in agreement with all known cosmological measurements and observations. This result could also be interpreted as a strong evidence for the self similarity of the geometry of spacetime, which is an expression of its basic fractal nature.展开更多
The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. ...The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. The band gaps of this type of phononic crystals with different defects were calculated such as defect-free, 60° crystal linear defect states, 120° crystal linear defect states, and 180° crystal linear defect states. It was found that the band gap will emerge in different linear defects of the phononic crystals and the bandwidth of linear defect states is larger than that of the free-defect crystal by about 2.14 times within the filling fraction F = 0.1-0.85. In addition, the influence of the filling fraction on the relative width of the minimum band gap is discussed.展开更多
This study focuses on the transitions in flow states around two-, three-and four-inline square cylinders under the effect of Reynolds numbers at two different gap spacing values using the lattice Boltzmann method. For...This study focuses on the transitions in flow states around two-, three-and four-inline square cylinders under the effect of Reynolds numbers at two different gap spacing values using the lattice Boltzmann method. For this purpose, Reynolds number is varied in the range 1–130 while two different values of spacing taken into account are gap spacing =2 and 5. Before going to actual problem, the code is tested for flow around a single square cylinder by comparing the results with experimental and numerical results of other researchers, and good agreement is found.The current numerical computations yield that for both spacing values and all combinations of cylinders there exist three different sates of flow depending on Reynolds numbers: steady state, transitional state and unsteady state. It is found that the range of Reynolds numbers for these flow states is different for both spacing values. At gap spacing =2 the range of Reynolds numbers for each flow state decreases by increasing the number of cylinders while at gap spacing =5 opposite trend is observed. The results also show that at gap spacing =2 the reduction in drag force is greater than the corresponding reduction at gap spacing =5. The maximum reduction in drag force is observed at Reynolds numbers =1 at both spacing values. Similarly, at both spacing values and all Reynolds numbers, the maximum reduction in drag force is observed for the case of four-inline square cylinders.展开更多
Modulation of band energies through size control offers new ways to control photoresponse and photoconversion efficiency of the solar cell. The P-type semiconductor of copper oxide is an important functional material ...Modulation of band energies through size control offers new ways to control photoresponse and photoconversion efficiency of the solar cell. The P-type semiconductor of copper oxide is an important functional material used for photovoltaic cells. Cu O is attractive as a selective solar absorber since it has high solar absorbance and a low thermal emittance. The present work describes the synthesis and characterization of semiconducting Cu O nanoparticles via one-step, solid-state reaction in the presence of Polyethylene glycol400 as size controlling agent for the preparation of Cu O nanoparticles at different temperatures. Solid-state mechanochemical processing, which is not only a physical size reduction process in conventional milling but also a chemical reaction, is mechanically activated at the nanoscale during grinding. The present method is a simple and efficient method of preparing nanoparticles with high yield at low cost. The structural and chemical composition of the nanoparticles were analyzed by X-ray diffraction, field emission scanning electron microscopy and energy-dispersive spectrometer, respectively. Optical properties and band gap of Cu O nanoparticles were studied by UV-Vis spectroscopy. These results showed that the band gap energy decreased with increase of annealing temperature, which can be attributed to the improvement in grain size of the samples.展开更多
The understanding of electrical breakdown in atmospheric air across micrometer gaps is critically important for the insulation design of micro ＆ nano electronic devices. In this paper, planar aluminum electrodes with...The understanding of electrical breakdown in atmospheric air across micrometer gaps is critically important for the insulation design of micro ＆ nano electronic devices. In this paper, planar aluminum electrodes with gaps ranging from 2μm to 40 #m were fabricated by microelectromechanical system technology. The influence factors including gap width and surface dielectric states were experimentally investigated using the home-built test and measurement system. Results showed that for SiO2 layers the current sustained at 2-3 nA during most of the pre-breakdown period, and then rose rapidly to 10-30 nA just before breakdown due to field electron emission, followed by the breakdown. The breakdown voltage curves demonstrated three stages： （1） a constantly decreasing region （the gap width d 〈5 μm）, where the field emission effect played an important role just near breakdown, supplying enough initial electrons for the breakdown process; （2） a plateau region with a near constant breakdown potential （5 μm〈 d 〈10 μm）; （3） a region for large gaps that adhered to Paschen＇s curve （d 〉10μm）. And the surface dielectric states including the surface resistivity and secondary electron yield were verified to be related to the propagation of discharge due to the interaction between initial electrons and dielectrics.展开更多
Two new quaternary sulfides, KSmSiS4 （1） and KYbSiS4 （2）, have been synthesized by high-temperature solid-state reaction. Single,crystal X-ray diffraction analyses indicate that both compounds crystallize in the s...Two new quaternary sulfides, KSmSiS4 （1） and KYbSiS4 （2）, have been synthesized by high-temperature solid-state reaction. Single,crystal X-ray diffraction analyses indicate that both compounds crystallize in the space group P21/m, and the crystal data are as follows： a = 6.426（11）, b = 6.582（11）, c = 8.602（15）A, β= 107.90（13）°, Z = 2, V= 346.2（10） A^3, Dc = 3.317 g/cm^3, F（000） = 318,μ（MoKα） = 10.334 mm^-1, the final R = 0.0559 and wR = 0.1370 for 1; and α= 6.3244（10）, b = 6.5552（10）, c = 8.5701（15）A, β= 108.001（13）°, Z = 2, V = 337.91（9） A^3, De= 3.621 g/cm^3, F（000） = 334, μ（MoKα） = 15.737 mm^-1, the final R = 0.0422 and wR = 0.0960 for 2. The KLnSiS4 （Ln = Sm, Yb） structure consists of corrugated ∞^2 [LnSiS4]^- layers which are formed by edge-sharing LnS8 bicapped trigonal prisms and SiS4 tetrahedra. The K^＋ cations are located in the cavities defined by S2 anions between the ∞^2[LnSiS4]^- layers. Band-gap analyses show that compounds 1 and 2 are semiconductors with optical band-gaps of 2.40 and 2.34 eV, respectively.展开更多
The following article has been retracted due to the investigation of complaints received against it. Mr. Mohammadali Ghorbani (corresponding author and also the last author) cheated the author’s name: Alireza Heidari...The following article has been retracted due to the investigation of complaints received against it. Mr. Mohammadali Ghorbani (corresponding author and also the last author) cheated the author’s name: Alireza Heidari. The scientific community takes a very strong view on this matter and we treat all unethical behavior such as plagiarism seriously. This paper published in Vol.3 No.2, 151-154, 2012, has been removed from this site.展开更多
Two kinds of experimental methods were tried in the present work:(i)the powder metallurgy method combined with differential thermal analysis(DTA)to determine the metastable liquidus miscibility gap for a Fe–Cu binary...Two kinds of experimental methods were tried in the present work:(i)the powder metallurgy method combined with differential thermal analysis(DTA)to determine the metastable liquidus miscibility gap for a Fe–Cu binary system and(ii)the high-temperature melting method combined with isothermal treatment to determine the stable liquidus miscibility gap for a Fe–Sn binary system.The experimental method was adopted according to the characteristics of the liquidus miscibility gap of the specific system.Using the powder metallurgy method,a uniform microstructure morphology and chemical composition was obtained in the DTA specimen,and the phase-separation temperature of the supercooled metastable liquid was measured.The isothermal treatment was applied for the samples inside the stable liquidus miscibility gap;here,equilibrated compositions were reached,and a layered morphology was formed after rapid cooling.The liquid miscibility gaps of the Fe–Cu and Fe–Sn binary systems were measured,and the peak temperatures of the corresponding miscibility gaps were determined to be about 1417°C at x(Cu)=0.465 at%and 1350°C at x(Sn)=0.487 at%,respectively.On the basis of the experimental results,both the Fe–Cu and the Fe–Sn binary systems were thermodynamically assessed.展开更多
One new ternary europium gallium sulfide, Eu2Ga2S5, has been synthesized by a facile solid-state route with boron as the reducing reagent. It crystallizes in the orthorhombic space group Pbca, with a = 11.976（1）, b ...One new ternary europium gallium sulfide, Eu2Ga2S5, has been synthesized by a facile solid-state route with boron as the reducing reagent. It crystallizes in the orthorhombic space group Pbca, with a = 11.976（1）, b = 11.074（1）, c = 17.446（1）A^°, V = 1650.6（3）A^°^3, and Z = 8. Its 3-D structure is built by the connection between EuS 7 monocapped trigonal prisms and GaS 4 tetrahedra, and the latter connect with each other to form layer-like slabs. Its optical energy gap is determined to be 2.17 eV, which is also verified by the electronic band structure calculation.展开更多
The temperature dependence of the density of energy states in semiconductors is considered. With the help of mathematical modeling of the thermal broadening of the energy levels, the temperature dependence of the band...The temperature dependence of the density of energy states in semiconductors is considered. With the help of mathematical modeling of the thermal broadening of the energy levels, the temperature dependence of the band gap of semiconductors is studied. In view of the non-parabolic and the temperature dependence of the effective mass of the density of states in the allowed bands, graphs of temperature dependence of the band gap are obtained. The theoretical results of mathematical modeling are compared with experimental data for Si, InAs and solid solutions of p-Bi2-xSbxTe3-ySey. The theoretical results satisfactorily explain the experimental results for Si and InAs. The new approach is investigated by the temperature dependence of the band gap of semiconductors.展开更多
We present an <em>ab-initio</em>, self-consistent density functional theory (DFT) description of ground state electronic and related properties of hexagonal boron nitride (h-BN). We used a local density ap...We present an <em>ab-initio</em>, self-consistent density functional theory (DFT) description of ground state electronic and related properties of hexagonal boron nitride (h-BN). We used a local density approximation (LDA) potential and the linear combination of atomic orbitals (LCAO) formalism. We rigorously implemented the Bagayoko, Zhao, and Williams (BZW) method, as enhanced by Ekuma and Franklin (BZW-EF). The method ensures a generalized minimization of the energy that is far beyond what can be obtained with self-consistency iterations using a single basis set. The method leads to the ground state of the material, in a verifiable manner, without employing over-complete basis sets. We report the ground state band structure, band gap, total and partial densities of states, and electron and hole effective masses of hexagonal boron nitride (h-BN). Our calculated, indirect band gap of 4.37 eV, obtained with room temperature experimental lattice constants of <em>a</em> = 2.504 <span style="white-space:nowrap;">Å</span> and <em>c </em>= 6.661 <span style="white-space:nowrap;">Å</span>, is in agreement with the measured value of 4.3 eV. The valence band maximum is slightly to the left of the K point, while the conduction band minimum is at the M point. Our calculated, total width of the valence and total and partial densities of states are in agreement with corresponding, experimental findings.展开更多
基金Project supported by the Program A for Science and Technology of Education Bureau of Fujian Province of China (Grant No. JA08210)
文摘In this paper the fabrication technique of amorphous SnO2：（Zn, In） film is presented. The transmittance and gap-states distribution of the film are given. The experimental results of gap-states distribution are compared with the calculated results by using the facts of short range order and lattice vacancy defect of the gap states theory. The distribution of gap state has been proved to be discontinuous due to the short-range order of amorphous structure.
基金supported by the National Natural Science Foundation of China (11304161, 11104148, and 51171082)the Tianjin Natural Science Foundation (13JCYBJC41100 and 14JCZDJC37700)+3 种基金the National Basic Research Program of China (973 Program) (2014CB931703)Specialized Research Fund for the Doctoral Program of Higher Education (20110031110034)the Fundamental Research Funds for the Central Universitiessupported by the Global Frontier Center for Multiscale Energy Systems at Seoul National University in Korea
文摘Given the demand for constantly scaling micro- electronic devices to ever smaller dimensions, a SiO2 gate dielectric was substituted with a higher dielectric-constant material, Hf（Zr）O2, in order to minimize current leakage through dielectric thin film. However, upon interfacing with high dielectric constant （high-κ） dielectrics, the electron mobility in the conventional Si channel degrades due to Coulomb scattering, surface-roughness scattering, remotephonon scattering, and dielectric-charge trapping.Ⅲ-Ⅴ and Ge are two promising candidates with superior mobility over Si. Nevertheless, Hf（Zr）O2/Ⅲ-Ⅴ（Ge） has much more complicated interface bonding than Si-based interfaces. Successful fabrication of a high-quality device critically depends on understanding and engineering the bonding configurations at Hf（Zr）O2/Ⅲ-Ⅴ（Ge） interfaces for the optimal design of device interfaces. Thus, an accurate atomic insight into the interface bonding and mechanism of interface gap states formation becomes essential. Here, we utilize first- principle calculations to investigate the interface between HfO2 and GaAs. Our study shows that As--As dimer bonding, Ga partial oxidation （between 3＋ and 1＋） and Ga- dangling bonds constitute the major contributions to gap states. These findings provide insightful guidance for optimum interface passivation.
文摘The optical reflectance and transmittance spectra in the wavelength range of 300-2500 nm are used to compute the absorption coefficient of zinc oxide films annealed at different post-annealing temperatures 400, 500 and 600°C.The values of the cross point between the curves of the real and imaginary parts of the optical conductivity ɑ_1 and ɑ_1 with energy axis of films exhibit values that correspond to optical gaps and are about 3.25-3.3 eV. The maxima of peaks in plots dR/dλ and dT/dλ versus wavelength of films exhibit optical gaps at about 3.12-3.25 eV.The values of the fundamental indirect band gap obtained from the Tauc model are at about 3.14-3.2 eV. It can be seen that films annealed at 600°C have the minimum indirect optical band gap at about 3.15 eV. The films annealed at 600°C have Urbach＇s energy minimum of 1.38 eV and hence have minimum disorder. The dispersion energy d of films annealed at 500°C has the minimum value of 43 eV.
基金supported by the National Natural Science Foundation of China(Grant Nos.12222413,12174443,12274459,and 12404266)the National Key R&D Program of China(Grant Nos.2023YFA1406500,2022YFA1403800,and 2022YFA1403103)+3 种基金the Natural Science Foundation of Shanghai (Grant No.23ZR1482200)the Natural Science Foundation of Ningbo (Grant No.2024J019)the Science Research Project of Hebei Education Department (Grant No.BJ2025060)the funding of Ningbo Yongjiang Talent Program。
文摘Superconducting elect rides have attracted growing attention for their potential to achieve high superconducting transition temperatures(T_(C))under pressure.However,many known elect rides are chemically reactive and unstable,making high-quality single-crystal growth,characterization,and measurements difficult,and most do not exhibit superconductivity at ambient pressure.In contrast,La_(3) In stands out for its ambient-pressure superconductivity(T_(C)∼9.4 K)and the availability of high-quality single crystals.Here,we investigate its low-energy electronic structure using angle-resolved photoemission spectroscopy and first-principles calculations.The bands near the Fermi energy(E_(F))are mainly derived from La 5d and In 5p orbitals.A saddle point is directly observed at the Brillouin zone(BZ)boundary,while a three-dimensional Van Hove singularity crosses E_(F) at the BZ corner.First-principles calculations further reveal topological Dirac surface states within the bulk energy gap above E_(F).The coexistence of a high density of states and in-gap topological surface states near𝐸F suggests that La3In offers a promising platform for tuning superconductivity and exploring possible topological superconducting phases through doping or external pressure.
基金Project supported by the National Natural Science Foundation of China (Grant No 10764002)
文摘Hole-net structure silicon is fabricated by laser irradiation and annealing, on which a photoluminescence （PL） band in a the region of 650-750 nm is pinned and its intensity increases obviously after oxidation. It is found that the PL intensity changes with both laser irradiation time and annealing time. Calculations show that some localized states appear in the band gap of the smaller nanocrystal when Silo bonds or Si-O-Si bonds are passivated on the surface. It is discovered that the density and the number of Si=O bonds or Si-O-Si bonds related to both the irradiation time and the annealing time obviously affect the generation of the localized gap states of hole-net silicon, by which the production of stimulated emission through controlling oxidation time can be explained.
基金Supported by Humanities and Social Sciences Project of the Ministry of Education(10YJC790111)
文摘The increasingly widening income gap between urban and rural areas is affected by many factors. Using the stepwise regression analysis,we find that urbanization level,socio-economic development,education level,financial development scale and financial development efficiency have the greatest impact on the income gap between urban and rural areas. By cointegration test,it is found that there is a long-term equilibrium relationship between these five variables and the income gap between urban and rural areas. We build the state-space model to research the dynamic impact of these factors on the income gap between urban and rural areas. The results show that by improving the level of urbanization,we can effectively narrow the income gap between urban and rural areas,while socio-economic development,the improvement of education level,expansion of financial development scale and financial development efficiency all significantly expand the income gap between urban and rural areas.
文摘In graphene,conductance electrons behave as massless relativistic particles and obey an analogue of the Dirac equation in two dimensions with a chiral nature.For this reason,the bounding of electrons in graphene in the form of geometries of quantum dots is impossible.In gapless graphene,due to its unique electronic band structure,there is a minimal conductivity at Dirac points,that is,in the limit of zero doping.This creates a problem for using such a highly motivated new material in electronic devices.One of the ways to overcome this problem is the creation of a band gap in the graphene band structure,which is made by inversion symmetry breaking（symmetry of sublattices）.We investigate the confined states of the massless Dirac fermions in an impured graphene by the short-range perturbations for ＂local chemical potential＂ and ＂local gap＂.The calculated energy spectrum exhibits quite different features with and without the perturbations.A characteristic equation for bound states（BSs） has been obtained.It is surprisingly found that the relation between the radial functions of sublattices wave functions,i.e.,f_m~＋（r）,g_m~＋（r）,and f_m^-（r）,g_m^-（r）,can be established by SO（2） group.
文摘Condense matter methods and mathematical models used in solving problems in solid state physics are transformed to high energy quantum cosmology in order to estimate the magnitude of the missing dark energy of the universe. Looking at the problem from this novel viewpoint was rewarded by a rather unexpected result, namely that the gap labelling method of integrated density of states for three dimensional icosahedral quasicrystals is identical to the previously measured and theoretically concluded ordinary energy density of the universe, namely a mere 4.5 percent of Einstein’s energy density, i.e. E(O) = mc2/22 where E is the energy, m is the mass and c is the speed of light. Consequently we conclude that the missing dark energy density must be E(D) = 1 - E(O) = mc2(21/22) in agreement with all known cosmological measurements and observations. This result could also be interpreted as a strong evidence for the self similarity of the geometry of spacetime, which is an expression of its basic fractal nature.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 10764005 and 11164034)the New Century Training Program Foundation for Talents from the Ministry of Education of China (Grant No. NCET-08-0926)
文摘The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. The band gaps of this type of phononic crystals with different defects were calculated such as defect-free, 60° crystal linear defect states, 120° crystal linear defect states, and 180° crystal linear defect states. It was found that the band gap will emerge in different linear defects of the phononic crystals and the bandwidth of linear defect states is larger than that of the free-defect crystal by about 2.14 times within the filling fraction F = 0.1-0.85. In addition, the influence of the filling fraction on the relative width of the minimum band gap is discussed.
文摘This study focuses on the transitions in flow states around two-, three-and four-inline square cylinders under the effect of Reynolds numbers at two different gap spacing values using the lattice Boltzmann method. For this purpose, Reynolds number is varied in the range 1–130 while two different values of spacing taken into account are gap spacing =2 and 5. Before going to actual problem, the code is tested for flow around a single square cylinder by comparing the results with experimental and numerical results of other researchers, and good agreement is found.The current numerical computations yield that for both spacing values and all combinations of cylinders there exist three different sates of flow depending on Reynolds numbers: steady state, transitional state and unsteady state. It is found that the range of Reynolds numbers for these flow states is different for both spacing values. At gap spacing =2 the range of Reynolds numbers for each flow state decreases by increasing the number of cylinders while at gap spacing =5 opposite trend is observed. The results also show that at gap spacing =2 the reduction in drag force is greater than the corresponding reduction at gap spacing =5. The maximum reduction in drag force is observed at Reynolds numbers =1 at both spacing values. Similarly, at both spacing values and all Reynolds numbers, the maximum reduction in drag force is observed for the case of four-inline square cylinders.
文摘Modulation of band energies through size control offers new ways to control photoresponse and photoconversion efficiency of the solar cell. The P-type semiconductor of copper oxide is an important functional material used for photovoltaic cells. Cu O is attractive as a selective solar absorber since it has high solar absorbance and a low thermal emittance. The present work describes the synthesis and characterization of semiconducting Cu O nanoparticles via one-step, solid-state reaction in the presence of Polyethylene glycol400 as size controlling agent for the preparation of Cu O nanoparticles at different temperatures. Solid-state mechanochemical processing, which is not only a physical size reduction process in conventional milling but also a chemical reaction, is mechanically activated at the nanoscale during grinding. The present method is a simple and efficient method of preparing nanoparticles with high yield at low cost. The structural and chemical composition of the nanoparticles were analyzed by X-ray diffraction, field emission scanning electron microscopy and energy-dispersive spectrometer, respectively. Optical properties and band gap of Cu O nanoparticles were studied by UV-Vis spectroscopy. These results showed that the band gap energy decreased with increase of annealing temperature, which can be attributed to the improvement in grain size of the samples.
基金supported by Research Funds of State Key Laboratory of Electrical Insulation and Power Equipment (Xi'an Jiaotong University) of China (No.EIPE14107)
文摘The understanding of electrical breakdown in atmospheric air across micrometer gaps is critically important for the insulation design of micro ＆ nano electronic devices. In this paper, planar aluminum electrodes with gaps ranging from 2μm to 40 #m were fabricated by microelectromechanical system technology. The influence factors including gap width and surface dielectric states were experimentally investigated using the home-built test and measurement system. Results showed that for SiO2 layers the current sustained at 2-3 nA during most of the pre-breakdown period, and then rose rapidly to 10-30 nA just before breakdown due to field electron emission, followed by the breakdown. The breakdown voltage curves demonstrated three stages： （1） a constantly decreasing region （the gap width d 〈5 μm）, where the field emission effect played an important role just near breakdown, supplying enough initial electrons for the breakdown process; （2） a plateau region with a near constant breakdown potential （5 μm〈 d 〈10 μm）; （3） a region for large gaps that adhered to Paschen＇s curve （d 〉10μm）. And the surface dielectric states including the surface resistivity and secondary electron yield were verified to be related to the propagation of discharge due to the interaction between initial electrons and dielectrics.
基金supported by the NNSFC (20521101)NSF for Distinguished Young Scientist of China (20425104)+1 种基金NSF of Fujian Province (2007J0173)the Fund of Fujian Key Laboratory of Nanomaterials (2006L2005)
文摘Two new quaternary sulfides, KSmSiS4 （1） and KYbSiS4 （2）, have been synthesized by high-temperature solid-state reaction. Single,crystal X-ray diffraction analyses indicate that both compounds crystallize in the space group P21/m, and the crystal data are as follows： a = 6.426（11）, b = 6.582（11）, c = 8.602（15）A, β= 107.90（13）°, Z = 2, V= 346.2（10） A^3, Dc = 3.317 g/cm^3, F（000） = 318,μ（MoKα） = 10.334 mm^-1, the final R = 0.0559 and wR = 0.1370 for 1; and α= 6.3244（10）, b = 6.5552（10）, c = 8.5701（15）A, β= 108.001（13）°, Z = 2, V = 337.91（9） A^3, De= 3.621 g/cm^3, F（000） = 334, μ（MoKα） = 15.737 mm^-1, the final R = 0.0422 and wR = 0.0960 for 2. The KLnSiS4 （Ln = Sm, Yb） structure consists of corrugated ∞^2 [LnSiS4]^- layers which are formed by edge-sharing LnS8 bicapped trigonal prisms and SiS4 tetrahedra. The K^＋ cations are located in the cavities defined by S2 anions between the ∞^2[LnSiS4]^- layers. Band-gap analyses show that compounds 1 and 2 are semiconductors with optical band-gaps of 2.40 and 2.34 eV, respectively.
文摘The following article has been retracted due to the investigation of complaints received against it. Mr. Mohammadali Ghorbani (corresponding author and also the last author) cheated the author’s name: Alireza Heidari. The scientific community takes a very strong view on this matter and we treat all unethical behavior such as plagiarism seriously. This paper published in Vol.3 No.2, 151-154, 2012, has been removed from this site.
基金supported by National Key Research and Development Program of China (No. 2016YFB0701201)National Natural Science Foundation of China (No. 51271027)
文摘Two kinds of experimental methods were tried in the present work:(i)the powder metallurgy method combined with differential thermal analysis(DTA)to determine the metastable liquidus miscibility gap for a Fe–Cu binary system and(ii)the high-temperature melting method combined with isothermal treatment to determine the stable liquidus miscibility gap for a Fe–Sn binary system.The experimental method was adopted according to the characteristics of the liquidus miscibility gap of the specific system.Using the powder metallurgy method,a uniform microstructure morphology and chemical composition was obtained in the DTA specimen,and the phase-separation temperature of the supercooled metastable liquid was measured.The isothermal treatment was applied for the samples inside the stable liquidus miscibility gap;here,equilibrated compositions were reached,and a layered morphology was formed after rapid cooling.The liquid miscibility gaps of the Fe–Cu and Fe–Sn binary systems were measured,and the peak temperatures of the corresponding miscibility gaps were determined to be about 1417°C at x(Cu)=0.465 at%and 1350°C at x(Sn)=0.487 at%,respectively.On the basis of the experimental results,both the Fe–Cu and the Fe–Sn binary systems were thermodynamically assessed.
基金supported by Yangzhou Engineering Technology Research Center of Petrochemical New Materials(YZM2015086)Yangzhou Science and Technology Bureau(YZ2016269)
文摘One new ternary europium gallium sulfide, Eu2Ga2S5, has been synthesized by a facile solid-state route with boron as the reducing reagent. It crystallizes in the orthorhombic space group Pbca, with a = 11.976（1）, b = 11.074（1）, c = 17.446（1）A^°, V = 1650.6（3）A^°^3, and Z = 8. Its 3-D structure is built by the connection between EuS 7 monocapped trigonal prisms and GaS 4 tetrahedra, and the latter connect with each other to form layer-like slabs. Its optical energy gap is determined to be 2.17 eV, which is also verified by the electronic band structure calculation.
文摘The temperature dependence of the density of energy states in semiconductors is considered. With the help of mathematical modeling of the thermal broadening of the energy levels, the temperature dependence of the band gap of semiconductors is studied. In view of the non-parabolic and the temperature dependence of the effective mass of the density of states in the allowed bands, graphs of temperature dependence of the band gap are obtained. The theoretical results of mathematical modeling are compared with experimental data for Si, InAs and solid solutions of p-Bi2-xSbxTe3-ySey. The theoretical results satisfactorily explain the experimental results for Si and InAs. The new approach is investigated by the temperature dependence of the band gap of semiconductors.
文摘We present an <em>ab-initio</em>, self-consistent density functional theory (DFT) description of ground state electronic and related properties of hexagonal boron nitride (h-BN). We used a local density approximation (LDA) potential and the linear combination of atomic orbitals (LCAO) formalism. We rigorously implemented the Bagayoko, Zhao, and Williams (BZW) method, as enhanced by Ekuma and Franklin (BZW-EF). The method ensures a generalized minimization of the energy that is far beyond what can be obtained with self-consistency iterations using a single basis set. The method leads to the ground state of the material, in a verifiable manner, without employing over-complete basis sets. We report the ground state band structure, band gap, total and partial densities of states, and electron and hole effective masses of hexagonal boron nitride (h-BN). Our calculated, indirect band gap of 4.37 eV, obtained with room temperature experimental lattice constants of <em>a</em> = 2.504 <span style="white-space:nowrap;">Å</span> and <em>c </em>= 6.661 <span style="white-space:nowrap;">Å</span>, is in agreement with the measured value of 4.3 eV. The valence band maximum is slightly to the left of the K point, while the conduction band minimum is at the M point. Our calculated, total width of the valence and total and partial densities of states are in agreement with corresponding, experimental findings.
