Models of threshold voltage and subthreshold swing, including the fringing-capacitance effects between the gate electrode and the surface of the source/drain region, are proposed. The validity of the proposed models i...Models of threshold voltage and subthreshold swing, including the fringing-capacitance effects between the gate electrode and the surface of the source/drain region, are proposed. The validity of the proposed models is confirmed by the good agreement between the simulated results and the experimental data. Based on the models, some factors impacting the threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor（MOSFET） are discussed in detail and it is found that there is an optimum thickness of gate oxide for definite dielectric constant of gate oxide to obtain the minimum subthreshold swing. As a result, it is shown that the fringing-capacitance effect of a shortchannel GeOI MOSFET cannot be ignored in calculating the threshold voltage and subthreshold swing.展开更多
An improved method of extracting the coupling capacitances of quantum dot structure is reported. This method is based on measuring the charge transfer current in the silicon nanowire metal-oxide-semiconductor field-ef...An improved method of extracting the coupling capacitances of quantum dot structure is reported. This method is based on measuring the charge transfer current in the silicon nanowire metal-oxide-semiconductor field-effect transistor （MOSFET）, in which the channel closing and opening are controlled by applying alternating-current biases with a half period phase shift to the dual lower gates. The capacitances around the dot, including fringing capacitances and barrier capacitances, are obtained by analyzing the relation between the transfer current and the applied voltage. This technique could be used to extract the capacitance parameters not only from the bulk silicon devices, but also from the silicon-on-insulator （SOI） MOSFETs.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.61274112)
文摘Models of threshold voltage and subthreshold swing, including the fringing-capacitance effects between the gate electrode and the surface of the source/drain region, are proposed. The validity of the proposed models is confirmed by the good agreement between the simulated results and the experimental data. Based on the models, some factors impacting the threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor（MOSFET） are discussed in detail and it is found that there is an optimum thickness of gate oxide for definite dielectric constant of gate oxide to obtain the minimum subthreshold swing. As a result, it is shown that the fringing-capacitance effect of a shortchannel GeOI MOSFET cannot be ignored in calculating the threshold voltage and subthreshold swing.
基金Project supported by the National Natural Science Foundation of China(Grant No.61474041)
文摘An improved method of extracting the coupling capacitances of quantum dot structure is reported. This method is based on measuring the charge transfer current in the silicon nanowire metal-oxide-semiconductor field-effect transistor （MOSFET）, in which the channel closing and opening are controlled by applying alternating-current biases with a half period phase shift to the dual lower gates. The capacitances around the dot, including fringing capacitances and barrier capacitances, are obtained by analyzing the relation between the transfer current and the applied voltage. This technique could be used to extract the capacitance parameters not only from the bulk silicon devices, but also from the silicon-on-insulator （SOI） MOSFETs.
