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Design of an Ultrafast Frequency Doubling Photonic Device
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作者 黄金哲 苏林 +2 位作者 浦绍质 孙上傲 张留洋 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第10期67-70,共4页
Ultrashort pulses complicate the frequency conversion in a nonlinear crystal, where group velocity mismatch becomes the main obstacle due to dispersion. We present a design for group velocity compensated second harmon... Ultrashort pulses complicate the frequency conversion in a nonlinear crystal, where group velocity mismatch becomes the main obstacle due to dispersion. We present a design for group velocity compensated second harmonic generation in a modulated nonlinear structure, embedded in a liquid crystal box. In this structure, nonlinear crystals act as sources of signal and liquid crystals compensate for group velocity mismatch originating from nonlinear crystals. There are the advantages of the flexible, controllable birefringence of liquid crystals. Meanwhile, a method calculating the parameters of this type of structure is presented. To make it clear, an example is provided. Furthermore, the structure can also be shaped as a waveguide to support integration into other optical devices, applicable to all-optical processing systems. 展开更多
关键词 of on BE is it Design of an Ultrafast frequency Doubling Photonic device in for BBO
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Electrical and dielectric characterization of Au/ZnO/n-Si device depending frequency and voltage
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作者 I Orak A Kocyigit S Ahndal 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第2期477-483,共7页
Au/Zn O/n-type Si device is obtained using atomic layer deposition(ALD) for Zn O layer, and some main electrical parameters are investigated, such as surface/interface state(Nss), barrier height(Φb), series res... Au/Zn O/n-type Si device is obtained using atomic layer deposition(ALD) for Zn O layer, and some main electrical parameters are investigated, such as surface/interface state(Nss), barrier height(Φb), series resistance(Rs), donor concentration(Nd), and dielectric characterization depending on frequency or voltage. These parameters are acquired by use of impedance spectroscopy measurements at frequencies ranging from 10 k Hz to 1 MHz and the direct current(DC) bias voltages in a range from-2 V to +2 V at room temperature are used. The main electrical parameters and dielectric parameters,such as dielectric constant(ε"), dielectric loss(ε"), loss tangent(tan δ), the real and imaginary parts of electric modulus(M and M), and alternating current(AC) electrical conductivity(σ) are affected by changing voltage and frequency. The characterizations show that some main electrical parameters usually decrease with increasing frequency because charge carriers at surface states have not enough time to fallow an external AC signal at high frequencies, and all dielectric parameters strongly depend on the voltage and frequency especially in the depletion and accumulation regions. Consequently, it can be concluded that interfacial polarization and interface charges can easily follow AC signal at low frequencies. 展开更多
关键词 Au/ZnO/n–Si device dielectric properties polarization process frequency and voltage dependence
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RESEARCH OF BJMOSFET FREQUENCY CHARACTERISTICS
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作者 Zeng Yun Yang Hongguan +3 位作者 Shang Yuquan Li Xiaolei Zhang Yan Wu Yonghui 《Journal of Electronics(China)》 2006年第4期590-593,共4页
The parasitic capacitance effect and its influence to the performance have been investigated in Bi-polar Junction Metal-Oxide-Semiconductor Field-Effect Transistor (BJMOSFET). The frequency characteristic equivalent c... The parasitic capacitance effect and its influence to the performance have been investigated in Bi-polar Junction Metal-Oxide-Semiconductor Field-Effect Transistor (BJMOSFET). The frequency characteristic equivalent circuit and high frequency response model of BJMOSFET have been presented. The frequency characteristic of BJMOSFET is simulated using the multi-transient analytical method and PSPICE9 simulator. The conclusions that BJMOSFET owns less total capacitance, wider frequency band, better transient charac-teristic and better frequency responses are reached by comparing with the traditional MOSFET at the same structure parameters and bias conditions. BJMOSFET, as a novel promising high frequency device, would be desired to find application in future integrated circuit. 展开更多
关键词 Bipolar Junction Metal-Oxide-Semiconductor Field-Effect Transistor (BJMOSFET) frequency characteristic High frequency device PSPICE
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RFID Based e-quality Tracking in Service-oriented Manufacturing Execution System 被引量:7
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作者 FU Yingbin JIANG Pingyu 《Chinese Journal of Mechanical Engineering》 SCIE EI CAS CSCD 2012年第5期974-981,共8页
The method of acquiring the real-time data has influenced the implementation of the manufacturing execution system (MES). Accompanied with turning the MES into service-oriented manufacturing execution system (so-ME... The method of acquiring the real-time data has influenced the implementation of the manufacturing execution system (MES). Accompanied with turning the MES into service-oriented manufacturing execution system (so-MES), real-time e-quality tracking (e-QT), in which real-time data are computed, has played more and more important roles in manufacturing. This paper presents an e-QT model through the study of real-time status data tracking and quality data collecting. An implementing architecture of the e-QT model is constructed on the basis of radio frequency identification devices (RFID) data-tracking network. In order to develop the e-QT system, some key enabling technologies, such as configuration, data collection, and data processing, etc, are studied. The relation schema between hardware is built for the RFID data-tracking network based on the configuration technique. Real-time data are sampled by using data collecting technique. Furthermore, real-time status and quality data in a shop-floor can be acquired in terms of using the real-time data computing method. Finally, a prototype system is developed and a running example is given so as to verify the feasibility of methods proposed in this paper. The proposed research provides effective e-quality tracking theoretical foundation through the use of RFID technology for the discrete manufacturing. 展开更多
关键词 real-time tracking data collection radio frequency identification devices
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The core pipeline equipment localization process and application prospects in China
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作者 Huang Zejun Gao Shunhua Wang Shijun 《Natural Gas Industry B》 2014年第2期137-143,共7页
To improve the economic efficiency of gas pipelines,core equipment such as compressor sets and large-diameter valves must be localized.For this purpose,in alliance with other related enterprises,PetroChina Company Lim... To improve the economic efficiency of gas pipelines,core equipment such as compressor sets and large-diameter valves must be localized.For this purpose,in alliance with other related enterprises,PetroChina Company Limited established an equipment localization R&D system and a new product testing system and successfully developed a 20 MW class motor-driven compressor set,a 30 MW-class gas turbine-driven compressor unit,and a high-pressure and large-diameter welded ball valve.First,the motor-driven compressor R&D focuses on three main units.The developed frequency-control device structure is a cascaded multilevel with a capacity of 25 MVA.The developed anti-explosion dynamo with a motor speed of 4800 rpm can produce a power of 22 MW.The developed compressor is PCL800 with features of a high efficiency and a wide flow-operating point-adjustment range.Second,there are two steps of the R&D of a GT-driven compressor unit(product A+B):auxiliary supporting systems and control systems are developed for the imported GT25000 gas turbine,together with China-made compressors,to constitute product A;simultaneously,the R&D of product B of a gas turbine is carried out,which would replace the imported one.Third,aiming to solve the problems of sealing and welding,we developed the high-pressure and large-diameter all-welded ball valves in full replace of the same kind of imported products with three different sizes:NPS40 Class 600,NPS48 Class 600,and NPS48 Class 900. 展开更多
关键词 Gas pipeline Equipment LOCALIZATION frequency control devices MOTOR Gas turbine Centrifugal compressor Large-diameter ball valve PETROCHINA
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Load shedding scheme for an interconnected hydro-thermal hybrid system with SMES 被引量:1
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作者 D. TYAGI Ashwani KUMAR Saurabh CHANANA 《Frontiers in Energy》 SCIE CSCD 2012年第3期227-236,共10页
The frequency of based on the load pattern the power system varies of the consumers. With continuous increase in the load, the frequency of the system keeps decreasing and may reach its minimum allowable limits. Furth... The frequency of based on the load pattern the power system varies of the consumers. With continuous increase in the load, the frequency of the system keeps decreasing and may reach its minimum allowable limits. Further increase in the load will result in more frequency drop leading to the need of load shedding, if excess generation is not available to cater the need. This paper proposed a methodology in a hybrid thermal-hydro system for finding the required amount of load to be shed for setting the frequency of the system within its minimum allowable limits. The load shedding steps were obtained based on the rate of change of frequency with the increase in the load in both areas. The impact of superconducting magnetic energy storage (SMES) was obtained on load shedding scheme. The comparison of the results was presented on the two-area system. 展开更多
关键词 critical load frequency response load shedding multi-area system rate of change of frequency superconducting magnetic energy storage (SMES) device
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