A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and succ...A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and success-fully taped out with a Chartered 0.35μm process. The pixel pitch is 8μm × 8μm with a fill factor of 57%, the photo-sensitivity is 0.8V/（lux · s） ,and the dynamic range is 50dB. Theoretical analysis and test results indicate that as the process is scaled down, a smaller pixel pitch reduces the sensitivity. A deep junction n-well/p-substrate photodiode with a reasonable fill factor and high sensitivity are more appropriate for submicron processes.展开更多
A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of...A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad（SiO2）/s and a total dose of 100 krad（SiO2）, and the photodiode is kept unbiased. The degradation of dark current, full well capacity,and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation（STI） surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose（TID） effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.展开更多
Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology....Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.展开更多
To improve the full-well capacity and linear dynamic range of CMOS image sensor,a special finger-shaped pinned photodiode(PPD)is designed.In terms of process,the first N-type ion implantation of the PPD N buried layer...To improve the full-well capacity and linear dynamic range of CMOS image sensor,a special finger-shaped pinned photodiode(PPD)is designed.In terms of process,the first N-type ion implantation of the PPD N buried layer is extended under the transfer gate,thereby increasing the PPD capacitance.Based on TCAD simulation,the width and spacing of PPD were precisely adjusted.A high full-well capacity pixel design with a pixel size of 6×6μm^2 is realized based on the 0.18μm CMOS process.The simulation results indicate that the pixel with the above structure and process has a depletion depth of 2.8μm and a charge transfer efficiency of 100%.The measurement results of the test chip show that the full-well capacity can reach 68650 e–.Compared with the conventional structure,the proposed PPD structure can effectively improve the full well capacity of the pixel.展开更多
A new active digital pixel circuit for CMOS image sensor is designed consisting of four components: a photo-transducer, a preamplifier, a sample & hold (S & H) circuit and an A/D converter with an inverter. It...A new active digital pixel circuit for CMOS image sensor is designed consisting of four components: a photo-transducer, a preamplifier, a sample & hold (S & H) circuit and an A/D converter with an inverter. It is optimized by simulation and adjustment based on 2 μm standard CMOS process. Each circuit of the components is designed with specific parameters. The simulation results of the whole pixel circuits show that the circuit has such advantages as low distortion, low power consumption, and improvement of the output performances by using an inverter.展开更多
The time and efficiency of charge collection are the key factors of monolithic active pixel sensor devices for minimum ionizing particles tracking detection.In this paper,3D models of pixels with different resistivity...The time and efficiency of charge collection are the key factors of monolithic active pixel sensor devices for minimum ionizing particles tracking detection.In this paper,3D models of pixels with different resistivity epitaxial layers(epi-layers) are built and simulated using Synopsys-Sentaurus.The basic characteristics of detectors are evaluated,including electric potential,electric field,and depleted region.Results indicate that the high resistivity (HR) epi-layer is a better choice.Further,simulation results show that the key collection performance is significantly improved owing to a wider and stronger electric field in the N type HR epi-layer.展开更多
A double sampling circuit to eliminating fixed pattern noise(FPN) in CMOS image sensor (CIS) is presented. Double sampling is implemented by column switch capacitor amplifier directly, and offset compensation is added...A double sampling circuit to eliminating fixed pattern noise(FPN) in CMOS image sensor (CIS) is presented. Double sampling is implemented by column switch capacitor amplifier directly, and offset compensation is added to the amplifier to suppress column FPN. The amplifier is embedded in a 64×64 CIS and successfully fabricated with chartered 0.35 μm process. Theory analysis and circuit simulation indicate that FPN can be suppressed from millivolt to microvolt. Test results show that FPN is smaller than one least-significant bit of 8 bit ADC. FPN is reduced to an acceptable level with double sampling technique implemented with switch capacitor amplifier.展开更多
By using the MOS-based model established in this paper, the physical process of photoelectron generation, transfer,and storage in the four-transistor active pixel sensor(4 T-APS) pixels can be simulated in SPICE envir...By using the MOS-based model established in this paper, the physical process of photoelectron generation, transfer,and storage in the four-transistor active pixel sensor(4 T-APS) pixels can be simulated in SPICE environment. The variable capacitance characteristics of double junctions in pinned photodiodes(PPDs) and the threshold voltage difference formed by channel nonuniform doping in transfer gates(TGs) are considered with this model. The charge transfer process of photogenerated electrons from PPDs to the floating diffusion(FD) is analyzed, and the function of nonuniform doping of TGs in suppressing charge injection back to PPDs is represented with the model. The optical and electrical characteristics of all devices in the pixel are effectively combined with the model. Moreover, the charge transfer efficiency and the voltage variation in PPD can be described with the model. Compared with the hybrid simulation in TCAD and the Verilog-A simulation in SPICE, this model has higher simulation efficiency and accuracy, respectively. The effectiveness of the MOS-based model is experimentally verified in a 3 μm test pixel designed in 0.11 μm CIS process.展开更多
Visual cortical prostheses have the potential to restore partial vision. Still limited by the low-resolution visual percepts provided by visual cortical prostheses, implant wearers can currently only ＂see＂ pixelized...Visual cortical prostheses have the potential to restore partial vision. Still limited by the low-resolution visual percepts provided by visual cortical prostheses, implant wearers can currently only ＂see＂ pixelized images, and how to obtain the specific brain responses to different pixelized images in the primary visual cortex（the implant area） is still unknown. We conducted a functional magnetic resonance imaging experiment on normal human participants to investigate the brain activation patterns in response to 18 different pixelized images. There were 100 voxels in the brain activation pattern that were selected from the primary visual cortex, and voxel size was 4 mm × 4 mm × 4 mm. Multi-voxel pattern analysis was used to test if these 18 different brain activation patterns were specific. We chose a Linear Support Vector Machine（LSVM） as the classifier in this study. The results showed that the classification accuracies of different brain activation patterns were significantly above chance level, which suggests that the classifier can successfully distinguish the brain activation patterns. Our results suggest that the specific brain activation patterns to different pixelized images can be obtained in the primary visual cortex using a 4 mm × 4 mm × 4 mm voxel size and a 100-voxel pattern.展开更多
电子轰击有源像素传感器(electron bombardment active pixel sensor,EBAPS)的光响应非均匀性是指EBAPS中光电阴极被均匀光源照射时,不同像素输出灰度不一致的现象,尤其是在低光环境下,图像的非均匀性会使细节识别变得困难,影响后续图...电子轰击有源像素传感器(electron bombardment active pixel sensor,EBAPS)的光响应非均匀性是指EBAPS中光电阴极被均匀光源照射时,不同像素输出灰度不一致的现象,尤其是在低光环境下,图像的非均匀性会使细节识别变得困难,影响后续图像处理和分析的准确性。光响应非均匀性主要由光电阴极不同区域对光响应的差异、电子敏感互补金属氧化物半导体不同区域的电子倍增特性差异、各像素间对同一激励的响应差异以及读出电路中传输信道的差异性等因素导致。针对EBAPS的非均匀性问题,提出了一种基于EBAPS光电阴极响应、电子倍增以及像素响应非均匀性协同适配的测试方法。实验结果表明,该方法能够有效评价EBAPS的非均匀性,并且能够对器件的测试筛选和算法校正起到指导作用。展开更多
电子轰击型有源像素传感器(Electron Bombarded Active Pixel Sensor,EBAPS)作为一种数字化微光成像器件,以其成像系统具有小型化、低成本和低功耗的优势,以及在昼夜条件下连续拍摄时具备清晰成像的能力,成为微光成像领域的研究热点。...电子轰击型有源像素传感器(Electron Bombarded Active Pixel Sensor,EBAPS)作为一种数字化微光成像器件,以其成像系统具有小型化、低成本和低功耗的优势,以及在昼夜条件下连续拍摄时具备清晰成像的能力,成为微光成像领域的研究热点。文章基于国产某型EBAPS微光器件,利用FPGA作为核心处理器,完成了EBAPS器件驱动电路、图像处理和跟踪电路、显示电路的设计。同时,构建了满足昼夜复用的光学系统,搭建了一种小型化的手持成像跟踪系统。实验结果表明,该EBAPS昼夜成像系统可在1×10^(-4)~1×10^(4) lx照度条件下实现良好的成像和跟踪效果。展开更多
This paper presents a new compensation pixe] circuit suitable for active-matrix organic light-emitting diode （AMOLED） stereoscopic three dimensional （3D~ displays with shutter glasses. The simultaneous emissio~ met...This paper presents a new compensation pixe] circuit suitable for active-matrix organic light-emitting diode （AMOLED） stereoscopic three dimensional （3D~ displays with shutter glasses. The simultaneous emissio~ method was used to solve the crosstalk problem, in which the periods of initialization and threshold voltage detectio11 occur for each pixel of whole panel simultaneously. Furthermore, there was no need of the periods of initialization and threshold voltage detection from the second frame beginning by one-time detection method. employing threshold voltage The non-uniformity of the proposed pixel circuit was considerably low with an average value of 8.6% measured from 20 discrete proposed pixel circuits integrated by In-Zn-O thin film transistors （IZO TFTs）. It was shown that the OLED current almost remains constant for the number of frames up to 70 even the threshold voltage detection period only exists in the first frame.展开更多
文摘A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and success-fully taped out with a Chartered 0.35μm process. The pixel pitch is 8μm × 8μm with a fill factor of 57%, the photo-sensitivity is 0.8V/（lux · s） ,and the dynamic range is 50dB. Theoretical analysis and test results indicate that as the process is scaled down, a smaller pixel pitch reduces the sensitivity. A deep junction n-well/p-substrate photodiode with a reasonable fill factor and high sensitivity are more appropriate for submicron processes.
基金Project supported by the National Natural Science Foundation of China(Grant No.11675259)the West Light Foundation of the Chinese Academy of Sciences(Grant Nos.2016-QNXZ-B-8 and 2016-QNXZ-B-2)
文摘A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad（SiO2）/s and a total dose of 100 krad（SiO2）, and the photodiode is kept unbiased. The degradation of dark current, full well capacity,and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation（STI） surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose（TID） effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.
基金Project supported the National Natural Science Foundation of China(Grant No.11675259)the West Light Foundation of the Chinese Academy of Sciences(Grant Nos.XBBS201316,2016-QNXZ-B-2,and 2016-QNXZ-B-8)Young Talent Training Project of Science and Technology,Xinjiang,China(Grant No.qn2015yx035)
文摘Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.
基金supported by the Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology。
文摘To improve the full-well capacity and linear dynamic range of CMOS image sensor,a special finger-shaped pinned photodiode(PPD)is designed.In terms of process,the first N-type ion implantation of the PPD N buried layer is extended under the transfer gate,thereby increasing the PPD capacitance.Based on TCAD simulation,the width and spacing of PPD were precisely adjusted.A high full-well capacity pixel design with a pixel size of 6×6μm^2 is realized based on the 0.18μm CMOS process.The simulation results indicate that the pixel with the above structure and process has a depletion depth of 2.8μm and a charge transfer efficiency of 100%.The measurement results of the test chip show that the full-well capacity can reach 68650 e–.Compared with the conventional structure,the proposed PPD structure can effectively improve the full well capacity of the pixel.
文摘A new active digital pixel circuit for CMOS image sensor is designed consisting of four components: a photo-transducer, a preamplifier, a sample & hold (S & H) circuit and an A/D converter with an inverter. It is optimized by simulation and adjustment based on 2 μm standard CMOS process. Each circuit of the components is designed with specific parameters. The simulation results of the whole pixel circuits show that the circuit has such advantages as low distortion, low power consumption, and improvement of the output performances by using an inverter.
基金supported by the France-China Particle Physics Laboratory(FCPPL)the China Scholarship Council(CSC)grant.
文摘The time and efficiency of charge collection are the key factors of monolithic active pixel sensor devices for minimum ionizing particles tracking detection.In this paper,3D models of pixels with different resistivity epitaxial layers(epi-layers) are built and simulated using Synopsys-Sentaurus.The basic characteristics of detectors are evaluated,including electric potential,electric field,and depleted region.Results indicate that the high resistivity (HR) epi-layer is a better choice.Further,simulation results show that the key collection performance is significantly improved owing to a wider and stronger electric field in the N type HR epi-layer.
基金Supported by National Natural Science Foundation of China (No.60576025).
文摘A double sampling circuit to eliminating fixed pattern noise(FPN) in CMOS image sensor (CIS) is presented. Double sampling is implemented by column switch capacitor amplifier directly, and offset compensation is added to the amplifier to suppress column FPN. The amplifier is embedded in a 64×64 CIS and successfully fabricated with chartered 0.35 μm process. Theory analysis and circuit simulation indicate that FPN can be suppressed from millivolt to microvolt. Test results show that FPN is smaller than one least-significant bit of 8 bit ADC. FPN is reduced to an acceptable level with double sampling technique implemented with switch capacitor amplifier.
基金Project supported by the National Natural Science Foundation of China (Grant No. 61874085)the Postdoctoral Research Funding Project of Shaanxi Province,China (Grant No. 2018BSHEDZZ41)。
文摘By using the MOS-based model established in this paper, the physical process of photoelectron generation, transfer,and storage in the four-transistor active pixel sensor(4 T-APS) pixels can be simulated in SPICE environment. The variable capacitance characteristics of double junctions in pinned photodiodes(PPDs) and the threshold voltage difference formed by channel nonuniform doping in transfer gates(TGs) are considered with this model. The charge transfer process of photogenerated electrons from PPDs to the floating diffusion(FD) is analyzed, and the function of nonuniform doping of TGs in suppressing charge injection back to PPDs is represented with the model. The optical and electrical characteristics of all devices in the pixel are effectively combined with the model. Moreover, the charge transfer efficiency and the voltage variation in PPD can be described with the model. Compared with the hybrid simulation in TCAD and the Verilog-A simulation in SPICE, this model has higher simulation efficiency and accuracy, respectively. The effectiveness of the MOS-based model is experimentally verified in a 3 μm test pixel designed in 0.11 μm CIS process.
基金supported by the National Natural Science Foundation of China,No.31070758,31271060the Natural Science Foundation of Chongqing in China,No.cstc2013jcyj A10085
文摘Visual cortical prostheses have the potential to restore partial vision. Still limited by the low-resolution visual percepts provided by visual cortical prostheses, implant wearers can currently only ＂see＂ pixelized images, and how to obtain the specific brain responses to different pixelized images in the primary visual cortex（the implant area） is still unknown. We conducted a functional magnetic resonance imaging experiment on normal human participants to investigate the brain activation patterns in response to 18 different pixelized images. There were 100 voxels in the brain activation pattern that were selected from the primary visual cortex, and voxel size was 4 mm × 4 mm × 4 mm. Multi-voxel pattern analysis was used to test if these 18 different brain activation patterns were specific. We chose a Linear Support Vector Machine（LSVM） as the classifier in this study. The results showed that the classification accuracies of different brain activation patterns were significantly above chance level, which suggests that the classifier can successfully distinguish the brain activation patterns. Our results suggest that the specific brain activation patterns to different pixelized images can be obtained in the primary visual cortex using a 4 mm × 4 mm × 4 mm voxel size and a 100-voxel pattern.
文摘电子轰击有源像素传感器(electron bombardment active pixel sensor,EBAPS)的光响应非均匀性是指EBAPS中光电阴极被均匀光源照射时,不同像素输出灰度不一致的现象,尤其是在低光环境下,图像的非均匀性会使细节识别变得困难,影响后续图像处理和分析的准确性。光响应非均匀性主要由光电阴极不同区域对光响应的差异、电子敏感互补金属氧化物半导体不同区域的电子倍增特性差异、各像素间对同一激励的响应差异以及读出电路中传输信道的差异性等因素导致。针对EBAPS的非均匀性问题,提出了一种基于EBAPS光电阴极响应、电子倍增以及像素响应非均匀性协同适配的测试方法。实验结果表明,该方法能够有效评价EBAPS的非均匀性,并且能够对器件的测试筛选和算法校正起到指导作用。
文摘This paper presents a new compensation pixe] circuit suitable for active-matrix organic light-emitting diode （AMOLED） stereoscopic three dimensional （3D~ displays with shutter glasses. The simultaneous emissio~ method was used to solve the crosstalk problem, in which the periods of initialization and threshold voltage detectio11 occur for each pixel of whole panel simultaneously. Furthermore, there was no need of the periods of initialization and threshold voltage detection from the second frame beginning by one-time detection method. employing threshold voltage The non-uniformity of the proposed pixel circuit was considerably low with an average value of 8.6% measured from 20 discrete proposed pixel circuits integrated by In-Zn-O thin film transistors （IZO TFTs）. It was shown that the OLED current almost remains constant for the number of frames up to 70 even the threshold voltage detection period only exists in the first frame.
