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Process parameters influence on zone refining and thermodynamics analysis of 1,2-diphenylethane 被引量:2
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作者 Yabing Qi Jun Li 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2022年第2期338-343,共6页
Effective distribution coefficients of 9 impurities in 1,2-diphenylethane have been calculated by directional crystallization under different ambient frozen temperature.The effect of varied zone size,temperature diffe... Effective distribution coefficients of 9 impurities in 1,2-diphenylethane have been calculated by directional crystallization under different ambient frozen temperature.The effect of varied zone size,temperature difference between the melt and ambient frozen environment,number of zone on purity of 1,2-diphenylethane have been also investigated during the process of zone refining.The results indicate that the product purity in the intermediate purified region with varied zone size is higher 0.04%–0.2%than that with constant zone size.The product purity increases with temperature difference between the melt and ambient frozen environment.The appropriate temperature difference is adopted 50°C.The product purity in the intermediate region of sample bar with 2 molten zones is higher 0.05%–0.43%than that with 1 molten zone.In addition,the change of enthalpy and entropy between impurities and 1,2-diphenylethane have been determined. 展开更多
关键词 12-Diphenylethane Zone refining Varied zone size effective distribution coefficient THERMODYNAMICS
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Preparation of Heavily Te-doped GaSb Single Crystal
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作者 Li Jianming,Tu Hailing,Zheng Ansheng and Luo Zhiqiang(General Research Institute for Nonferrous Metals,Beijing 100088,China) 《Rare Metals》 SCIE EI CAS CSCD 2000年第3期186-,共5页
Based on comparison of the single crystal growth from several Czochralski techniques,it showed that the most advantageous method for GaSb growth seems to be LEC pulling method.Highly Te doped GaSb single crystals can... Based on comparison of the single crystal growth from several Czochralski techniques,it showed that the most advantageous method for GaSb growth seems to be LEC pulling method.Highly Te doped GaSb single crystals can be prepared on small scale with good reproducibility by using special filtering technology.Using the Te concentrations calculated from the Hall measurement,the distribution coefficient of tellurium in GaSb was estimated to be about 0.38 under our growth conditions.The etch pit density (EPD) examination in <100> GaSb showed that the profile of EPD is of W shape in growth plane and the value of average EPD is about 1.0×10 -3 cm -2 along growth direction. 展开更多
关键词 GASB effective distribution coefficient Etch pit density
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