The chaotic behaviour of dislocation multiplication process was investigated. The change of Lyapunov exponent which is used to determine the stability of quasi-periodic and chaotic behavior as well as that of equilib...The chaotic behaviour of dislocation multiplication process was investigated. The change of Lyapunov exponent which is used to determine the stability of quasi-periodic and chaotic behavior as well as that of equilibrium points, and periodic solution was reported by using an iteration model of dislocation multiplication. An unusual behavior of Lyapunov exponent and Feigenbaum exponent which respond to the geometric convergence of orbit from bifurcation to chaos was shown by dislocation velocity exponent m and there is a distinction on the tendency of convergence for the dislocation multiplication model when it was compared with logistic map. It is reasonable for the difference to be analyzed from the materials viewpoint. (Edited author abstract) 9 Refs.展开更多
To grow high-quality and large-size monocrystalline silicon at low cost, we proposed a single-seed casting technique. To realize this technique, two challenges—polycrystalline nucleation on the crucible wall and disl...To grow high-quality and large-size monocrystalline silicon at low cost, we proposed a single-seed casting technique. To realize this technique, two challenges—polycrystalline nucleation on the crucible wall and dislocation multiplication inside the crystal—needed to be addressed. Numerical analysis was used to develop solutions for these challenges. Based on an optimized furnace structure and operating conditions from numerical analysis, experiments were performed to grow monocrystalline silicon using the single-seed casting technique. The results revealed that this technique is highly superior to the popular high-performance multicrystalline and multiseed casting mono-like techniques.展开更多
Tungsten has promising applications in high-radiation,high-erosion and high-impact environments.Laser peening is an effective method to enhance the surface mechanical properties of tungsten materials.However,the ultra...Tungsten has promising applications in high-radiation,high-erosion and high-impact environments.Laser peening is an effective method to enhance the surface mechanical properties of tungsten materials.However,the ultrafast dynamic mechanism of defect evolutions induced by laser shockwave in tungsten lattice is unclear.Here,we investigated the evolutions and interactions of various defects under ultrafast compressive process in tungsten lattice using molecular dynamic method.The results confirm the brittleness of tungsten and reveal that void can reduce the yield strain and strength of the tungsten lattice by accelerating defect mesh extension and promoting the dislocation nucleation around itself.Dislocation density is increased with compressive strain rate.Meanwhile,dislocation multiplication and motion reduce the elastic stage and play a dominant role during the plastic deformation of tungsten lattice.Additionally,void can disrupt the dislocation displacement and promote the pinning effect on dislocations by defect mesh extension.展开更多
文摘The chaotic behaviour of dislocation multiplication process was investigated. The change of Lyapunov exponent which is used to determine the stability of quasi-periodic and chaotic behavior as well as that of equilibrium points, and periodic solution was reported by using an iteration model of dislocation multiplication. An unusual behavior of Lyapunov exponent and Feigenbaum exponent which respond to the geometric convergence of orbit from bifurcation to chaos was shown by dislocation velocity exponent m and there is a distinction on the tendency of convergence for the dislocation multiplication model when it was compared with logistic map. It is reasonable for the difference to be analyzed from the materials viewpoint. (Edited author abstract) 9 Refs.
基金partly supported by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy,Trade and Industry (METI),Japan
文摘To grow high-quality and large-size monocrystalline silicon at low cost, we proposed a single-seed casting technique. To realize this technique, two challenges—polycrystalline nucleation on the crucible wall and dislocation multiplication inside the crystal—needed to be addressed. Numerical analysis was used to develop solutions for these challenges. Based on an optimized furnace structure and operating conditions from numerical analysis, experiments were performed to grow monocrystalline silicon using the single-seed casting technique. The results revealed that this technique is highly superior to the popular high-performance multicrystalline and multiseed casting mono-like techniques.
基金financially support from the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDA25040201)the National Natural Science Foundation of China(Grant No.51727901)support provided by the Deanship of Scientific Research(DSR)at King Fahd University of Petroleum&Minerals(KFUPM)(Grant No.DF201020)
文摘Tungsten has promising applications in high-radiation,high-erosion and high-impact environments.Laser peening is an effective method to enhance the surface mechanical properties of tungsten materials.However,the ultrafast dynamic mechanism of defect evolutions induced by laser shockwave in tungsten lattice is unclear.Here,we investigated the evolutions and interactions of various defects under ultrafast compressive process in tungsten lattice using molecular dynamic method.The results confirm the brittleness of tungsten and reveal that void can reduce the yield strain and strength of the tungsten lattice by accelerating defect mesh extension and promoting the dislocation nucleation around itself.Dislocation density is increased with compressive strain rate.Meanwhile,dislocation multiplication and motion reduce the elastic stage and play a dominant role during the plastic deformation of tungsten lattice.Additionally,void can disrupt the dislocation displacement and promote the pinning effect on dislocations by defect mesh extension.
