Perovskite solar cells(PsCs)have developed tremendously over the past decade.However,the key factors influencing the power conversion efficiency(PCE)of PSCs remain incompletely understood,due to the complexity and cou...Perovskite solar cells(PsCs)have developed tremendously over the past decade.However,the key factors influencing the power conversion efficiency(PCE)of PSCs remain incompletely understood,due to the complexity and coupling of these structural and compositional parameters.In this research,we demon-strate an effective approach to optimize PSCs performance via machine learning(ML).To address chal-lenges posed by limited samples,we propose a feature mask(FM)method,which augments training samples through feature transformation rather than synthetic data.Using this approach,squeeze-and-excitation residual network(SEResNet)model achieves an accuracy with a root-mean-square-error(RMSE)of 0.833%and a Pearson's correlation coefficient(r)of 0.980.Furthermore,we employ the permu-tation importance(PI)algorithm to investigate key features for PCE.Subsequently,we predict PCE through high-throughput screenings,in which we study the relationship between PCE and chemical com-positions.After that,we conduct experiments to validate the consistency between predicted results by ML and experimental results.In this work,ML demonstrates the capability to predict device performance,extract key parameters from complex systems,and accelerate the transition from laboratory findings to commercialapplications.展开更多
Device physics research for submicron and deep submicron space microelectronics devices and integrated circuits will be described in three topics.1.Thin film submicron and deep submicron SOS / CMOS devices and integra...Device physics research for submicron and deep submicron space microelectronics devices and integrated circuits will be described in three topics.1.Thin film submicron and deep submicron SOS / CMOS devices and integrated circuits.2.Deep submicron LDD CMOS devices and integrated circuits.3.C band and Ku band microwave GaAs MESFET and III-V compound hetrojunction HEM T and HBT devices and integrated circuits.展开更多
Organic electrochemical transistors(OECTs) exhibit significant potential for applications in healthcare and human-machine interfaces, due to their tunable synthesis, facile deposition, and excellent biocompatibility. ...Organic electrochemical transistors(OECTs) exhibit significant potential for applications in healthcare and human-machine interfaces, due to their tunable synthesis, facile deposition, and excellent biocompatibility. Expanding OECTs to the fexible devices will significantly facilitate stable contact with the skin and enable more possible bioelectronic applications. In this work,we summarize the device physics of fexible OECTs, aiming to offer a foundational understanding and guidelines for material selection and device architecture. Particular attention is paid to the advanced manufacturing approaches, including photolithography and printing techniques, which establish a robust foundation for the commercialization and large-scale fabrication. And abundantly demonstrated examples ranging from biosensors, artificial synapses/neurons, to bioinspired nervous systems are summarized to highlight the considerable prospects of smart healthcare. In the end, the challenges and opportunities are proposed for fexible OECTs. The purpose of this review is not only to elaborate on the basic design principles of fexible OECTs, but also to act as a roadmap for further exploration of wearable OECTs in advanced bio-applications.展开更多
The focus of this study is on investigating the vanadyl 2,9,16,23-tetraphenoxy-29H, 31H-phthalocyanine(VOPc Ph O)and its blend with o-xylenyl C60 bis-adduct(OXCBA), for use as a lateral ultraviolet organic photodetect...The focus of this study is on investigating the vanadyl 2,9,16,23-tetraphenoxy-29H, 31H-phthalocyanine(VOPc Ph O)and its blend with o-xylenyl C60 bis-adduct(OXCBA), for use as a lateral ultraviolet organic photodetector. The research focuses on improving dark current reduction, which is a challenge in lateral organic photodetector. By integrating the OXCBA, low dark current values of 4.83 nA·cm^(-2)(D_(shot)^(*)= 1.414 × 10^(11)Jones) have been achieved as compared to the stand-alone VoPcPhO device of 14.06 nA·cm^(-2). The major contributing factors to dark current reduction are due to the efficient charge transfer at the photoactive-electrode interface, the deep highest occupied molecular orbital(HOMO)level of OXCBA, which leads to favorable energy level alignments hindering hole injection, and the occurrence of bulk heterojunction vertical phase segregation between VOPcPhO and OXCBA. These findings shed light on the relationship between the organic photoconductor's material composition, morphology, and performance metrics and open new avenues for metal phthalocyanine-based lateral ultraviolet organic photodetectors with low dark current and enhanced performance.展开更多
The continued development of CMOS technology and the emergence of new applications demand continued improvement and enhancement of compact models. This paper outlines the recent work of the BSIM project at the Univers...The continued development of CMOS technology and the emergence of new applications demand continued improvement and enhancement of compact models. This paper outlines the recent work of the BSIM project at the University of California, Berkeley,including BSIM5 research, BSIM4 enhancements, and BSIMSOI development. BSIM5 addresses the needs of nano-CMOS technology and RF high-speed CMOS circuit simulation. BSIM4 is a mature industrial standard MOSFET model with several improvements to meet the technology requirements. BSIMSOI is developed into a generic model framework for PD and FD SOI technology. An operation mode choice,via the calculation of the body potential △Vbi and body current/charge,helps circuit designers in the trend of the coexistence of PD and FD devices.展开更多
A gate-all-around cylindrical （GAAC） transistor for sub-10nm scaling is proposed. The GAAC transistor device physics,TCAD simulation,and proposed fabrication procedure are reported for the first time. Among all othe...A gate-all-around cylindrical （GAAC） transistor for sub-10nm scaling is proposed. The GAAC transistor device physics,TCAD simulation,and proposed fabrication procedure are reported for the first time. Among all other novel FinFET devices, the gate-all-around cylindrical device can be particularly applied for reducing the problems of the conventional multi-gate FinFET and improving the device performance and the scale down capability. According to our simulation,the gate-all-around cylindrical device shows many benefits over conventional multi-gate FinFET, including gate-all- around rectangular （GAAR） devices. With gate-all-around cylindrical architecture,the transistor is controlled by an essen- tially infinite number of gates surrounding the entire cylinder-shaped channel. The electrical integrity within the channel is improved by reducing the leakage current due to the non-symmetrical field accumulation such as the corner effect. The proposed fabrication procedures for devices having GAAC device architecture are also discussed. The method is characterized by its simplicity and full compatibility with conventional planar CMOS technology.展开更多
A new hysteretic nonlinear model of quad iced bundle conductors is constructed. The bifurcation equation is obtained by applying the undetermined fundamental frequency method of the complex normal form. The transition...A new hysteretic nonlinear model of quad iced bundle conductors is constructed. The bifurcation equation is obtained by applying the undetermined fundamental frequency method of the complex normal form. The transition set and bifurcation diagrams for the singularity are presented. Then the corresponding relations between the unfolding parameters and the system parameters are given, and the sensitivity parameters and its range of values are obtained to analyze and to control the galloping of the quad iced bundle conductor.展开更多
We propose a low-cost and high-damage-threshold phase control system that employs a piezoelectric ceramic transducer modulator controlled by a stochastic parallel gradient descent algorithm. Efficient phase locking of...We propose a low-cost and high-damage-threshold phase control system that employs a piezoelectric ceramic transducer modulator controlled by a stochastic parallel gradient descent algorithm. Efficient phase locking of two fiber amplifiers is demonstrated. Experimental results show that energy encircled in the target pinhole is increased by a factor of 1.76 and the visibility of the fringe pattern is as high as 90% when the system is in close-loop. The phase control system has potential in phase locking of large-number and high-power fiber laser endeavors.展开更多
In a recent paper [Yan F L et al. Chin.Phys.Lett. 25（2008）1187], a quantum secret sharing the protocol between multiparty and multiparty with single photons and unitary transformations was presented. We analyze the ...In a recent paper [Yan F L et al. Chin.Phys.Lett. 25（2008）1187], a quantum secret sharing the protocol between multiparty and multiparty with single photons and unitary transformations was presented. We analyze the security of the protocol and find that a dishonest participant can eavesdrop the key by using a special attack. Finally, we give a description of this strategy and put forward an improved version of this protocol which can stand against this kind of attack.展开更多
The introduction of poly（ether urethane） （PEUR） into polymer electrolyte based on poly（ethylene oxide）, LiI and I2, has significantly increased the ionic conductivity by nearly two orders of magnitudes. An incre...The introduction of poly（ether urethane） （PEUR） into polymer electrolyte based on poly（ethylene oxide）, LiI and I2, has significantly increased the ionic conductivity by nearly two orders of magnitudes. An increment of I3- diffusion coefficient is also observed. All-solid-state dye-sensitized solar cells are constructed using the polymer electrolytes. It was found that PEUR incorporation has a beneficial effect on the enhancement of open circuit voltage VOC by shifting the band edge of TiO2 to a negative value. Scanningelectron microscope images indicate the perfect interfacial contact between the TiO2 electrode and the blend electrolyte.展开更多
The existing theory of decoy-state quantum cryptography assumes that the dark count rate is a constant, but in practice there exists fluctuation. We develop a new scheme of the decoy state, achieve a more practical ke...The existing theory of decoy-state quantum cryptography assumes that the dark count rate is a constant, but in practice there exists fluctuation. We develop a new scheme of the decoy state, achieve a more practical key generation rate in the presence of fluctuation of the dark count rate, and compare the result with the result of the decoy-state without fluctuation. It is found that the key generation rate and maximal secure distance will be decreased under the influence of the fluctuation of the dark count rate.展开更多
A thin TiO2 layer inserted in a phase change memory （PCM） cell to form a deep sub-micro bottom electrode （DBE） is proposed and its electro-thermal characteristics are investigated with the three-dimensional finite...A thin TiO2 layer inserted in a phase change memory （PCM） cell to form a deep sub-micro bottom electrode （DBE） is proposed and its electro-thermal characteristics are investigated with the three-dimensional finite element analysis. Compared with the conventional PCM cell with a SiN stop layer, the reset threshold current of the PCM cell with the TiO2 layer is reduced from 1.8 mA to 1.2 mA and the ratio of the amorphous resistance and crystalline resistive increases from 65 to 100. The optimum thickness of the TiO2 layer and the optimum height of DBE are 10nm and 200nm, respectively. Therefore, the PCM cell with the TiO2 layer can decrease the programming power consumption and increase heating efficiency. The TiO2 film is a better candidate for the SiN film in the PCM cell structure to prepare DBE and to reduce programming power in the reset operation.展开更多
We recently proposed a flexible quantum secure direct communication protocol [Chin. Phys. Lett. 23 （2006） 3152]. By analyzing its security in the perfect channel from the aspect of quantum information theory, we fin...We recently proposed a flexible quantum secure direct communication protocol [Chin. Phys. Lett. 23 （2006） 3152]. By analyzing its security in the perfect channel from the aspect of quantum information theory, we find that an eavesdropper is capable of stealing all the information without being detected. Two typical attacks are presented to illustrate this point. A solution to this loophole is also suggested and we show its powerfulness against the most general individual attack in the ideal case. We also discuss the security in the imperfect case when there is noise and loss.展开更多
A three-dimensional finite element model for phase change random access memory （PCRAM） is established for comprehensive electrical and thermal analysis during SET operation. The SET behaviours of the heater additio...A three-dimensional finite element model for phase change random access memory （PCRAM） is established for comprehensive electrical and thermal analysis during SET operation. The SET behaviours of the heater addition structure （HS） and the ring-type contact in bottom electrode （RIB） structure are compared with each other. There are two ways to reduce the RESET current, applying a high resistivity interracial layer and building a new device structure. The simulation resuIts indicate that the variation of SET current with different power reduction ways is little. This study takes the RESET and SET operation current into consideration, showing that the RIB structure PCRAM cell is suitable for future devices with high heat efficiency and high-density, due to its high heat efficiency in RESET operation.展开更多
Trap-induced current collapse has become one of the critical issues hindering the improvement of Ga Nbased microwave power devices. It is difficult to study the behavior of each trapping effect separately with the exp...Trap-induced current collapse has become one of the critical issues hindering the improvement of Ga Nbased microwave power devices. It is difficult to study the behavior of each trapping effect separately with the experimental measurement. Transient simulation is a useful technique for analyzing the mechanism of current collapse. In this paper, the coeffect of surface-and bulk-trapping behaviors on the performance of Al Ga N/Ga N HEMTs is investigated based on the two-dimensional（2 D） transient simulation. In addition, the mechanism of trapping effects is analyzed from the aspect of device physics. Two simulation models with different types of traps are used for comparison, and the simulated results reproduced the experimental measured data. It is found that the final steady-state current decreases when both the surface and bulk traps are taken into account in the model.However, contrary to the expectation, the total current collapse is dramatically reduced（e.g. from 18% to 4% for the 90 nm gate-length device）. The results suggest that the surface-related current collapse of Ga N-based HEMTs may be mitigated in some degree due to the participation of bulk traps with short time constant. The work in this paper will be helpful for further optimization design of material and device structures.展开更多
A surface potential-based model for undoped symmetric double-gate MOSFETs is derived by solving Poisson＇s equation to obtain the relationship between the surface potential and voltage in the channel region in a self-...A surface potential-based model for undoped symmetric double-gate MOSFETs is derived by solving Poisson＇s equation to obtain the relationship between the surface potential and voltage in the channel region in a self-consistent way. The drain current expression is then obtained from Pao-Sah＇s double integral. The model consists of one set of surface potential equations,and the analytic drain current can be evaluated from the surface potential at the source and drain ends. It is demonstrated that the model is valid for all operation regions of the double-gate MOSFETs and without any need for simplification （e. g., by using the charge sheet assumption） or auxiliary fitting functions. The model has been verified by extensive comparisons with 2D numerical simulation under different operation conditions with different geometries. The consistency between the model calculation and numerical simulation demonstrates the accuracy of the model.展开更多
A continuous surface potential versus voltage equation is proposed and then its solution is further discussed for a long channel intrinsic surrounding-gate（SRG） MOSFET from the accumulation to strong inversion regio...A continuous surface potential versus voltage equation is proposed and then its solution is further discussed for a long channel intrinsic surrounding-gate（SRG） MOSFET from the accumulation to strong inversion region.The original equation is derived from the exact solution of a simplified Poisson equation and then the empirical correction is performed from the mathematical condition required by the continuity of the solution,which results in a continuous surface potential versus voltage equation,allowing the surface potential and the related derivatives to be described by an analytic solution from the accumulation to strong inversion region and from linear to the saturation region accurately and continuously.From these results,the dependences of surface potential and centric potential characteristics on device geometry are analyzed and the results are also verified with the 3-D numerical simulation from the aspect of accuracy and continuity tests.展开更多
Aerosol technology provides efficient methods for producing nanoparticles with well-controlled composition and size distribution. This review provides an overview of methods and results obtained by using aerosol techn...Aerosol technology provides efficient methods for producing nanoparticles with well-controlled composition and size distribution. This review provides an overview of methods and results obtained by using aerosol technology for producing nanostruetures for a variety of applications in semiconductor physics and device technology. Examples are given from： production of metal and metal alloy particles： semiconductor nanoparticles; semiconductor nanowires, grown both in the aerosol phase and on substrates; physics studies based on individual aerosol-generated devices; and large area deviees based on aerosol particles.展开更多
A surface potential based non-charge-sheet core model for cylindrical undoped surrounding-gate （SRG） MOSFETs is presented. It is based on the exact surface potential solution of Poisson＇s equation and Pao-Sah＇s du...A surface potential based non-charge-sheet core model for cylindrical undoped surrounding-gate （SRG） MOSFETs is presented. It is based on the exact surface potential solution of Poisson＇s equation and Pao-Sah＇s dual integral without the charge-sheet approximation, allowing the SRG-MOSFET characteristics to be adequately described by a single set of the analytic drain current equation in terms of the surface potential evaluated at the source and drain ends. It is valid for all operation regions and traces the transition from the linear to saturation and from the sub-threshold to strong inversion region without fitting-parameters, and verified by the 3-D numerical simulation.展开更多
基金supported by the National Key Research and Development Program (2022YFF0609504)the National Natural Science Foundation of China (61974126,51902273,62005230,62001405)the Natural Science Foundation of Fujian Province of China (No.2021J06009)
文摘Perovskite solar cells(PsCs)have developed tremendously over the past decade.However,the key factors influencing the power conversion efficiency(PCE)of PSCs remain incompletely understood,due to the complexity and coupling of these structural and compositional parameters.In this research,we demon-strate an effective approach to optimize PSCs performance via machine learning(ML).To address chal-lenges posed by limited samples,we propose a feature mask(FM)method,which augments training samples through feature transformation rather than synthetic data.Using this approach,squeeze-and-excitation residual network(SEResNet)model achieves an accuracy with a root-mean-square-error(RMSE)of 0.833%and a Pearson's correlation coefficient(r)of 0.980.Furthermore,we employ the permu-tation importance(PI)algorithm to investigate key features for PCE.Subsequently,we predict PCE through high-throughput screenings,in which we study the relationship between PCE and chemical com-positions.After that,we conduct experiments to validate the consistency between predicted results by ML and experimental results.In this work,ML demonstrates the capability to predict device performance,extract key parameters from complex systems,and accelerate the transition from laboratory findings to commercialapplications.
文摘Device physics research for submicron and deep submicron space microelectronics devices and integrated circuits will be described in three topics.1.Thin film submicron and deep submicron SOS / CMOS devices and integrated circuits.2.Deep submicron LDD CMOS devices and integrated circuits.3.C band and Ku band microwave GaAs MESFET and III-V compound hetrojunction HEM T and HBT devices and integrated circuits.
基金sponsored by the Regional Joint Fund of the National Science Foundation of China via Grant No. U21A20492the National Natural Science Foundation of China (NSFC) via Grant No. 62275041+2 种基金the Sichuan Science and Technology Program via Grant Nos. 2022YFH0081, 2022YFG0012 and 2022YFG0013the Sichuan Youth Software Innovation Project Funding via Grant No. MZGC20230068the Sichuan Province Key Laboratory of Display Science and Technology。
文摘Organic electrochemical transistors(OECTs) exhibit significant potential for applications in healthcare and human-machine interfaces, due to their tunable synthesis, facile deposition, and excellent biocompatibility. Expanding OECTs to the fexible devices will significantly facilitate stable contact with the skin and enable more possible bioelectronic applications. In this work,we summarize the device physics of fexible OECTs, aiming to offer a foundational understanding and guidelines for material selection and device architecture. Particular attention is paid to the advanced manufacturing approaches, including photolithography and printing techniques, which establish a robust foundation for the commercialization and large-scale fabrication. And abundantly demonstrated examples ranging from biosensors, artificial synapses/neurons, to bioinspired nervous systems are summarized to highlight the considerable prospects of smart healthcare. In the end, the challenges and opportunities are proposed for fexible OECTs. The purpose of this review is not only to elaborate on the basic design principles of fexible OECTs, but also to act as a roadmap for further exploration of wearable OECTs in advanced bio-applications.
基金financial support from the Ministry of Science,Technology and Innovation with Grant No. MOSTI004-2023SRF。
文摘The focus of this study is on investigating the vanadyl 2,9,16,23-tetraphenoxy-29H, 31H-phthalocyanine(VOPc Ph O)and its blend with o-xylenyl C60 bis-adduct(OXCBA), for use as a lateral ultraviolet organic photodetector. The research focuses on improving dark current reduction, which is a challenge in lateral organic photodetector. By integrating the OXCBA, low dark current values of 4.83 nA·cm^(-2)(D_(shot)^(*)= 1.414 × 10^(11)Jones) have been achieved as compared to the stand-alone VoPcPhO device of 14.06 nA·cm^(-2). The major contributing factors to dark current reduction are due to the efficient charge transfer at the photoactive-electrode interface, the deep highest occupied molecular orbital(HOMO)level of OXCBA, which leads to favorable energy level alignments hindering hole injection, and the occurrence of bulk heterojunction vertical phase segregation between VOPcPhO and OXCBA. These findings shed light on the relationship between the organic photoconductor's material composition, morphology, and performance metrics and open new avenues for metal phthalocyanine-based lateral ultraviolet organic photodetectors with low dark current and enhanced performance.
文摘The continued development of CMOS technology and the emergence of new applications demand continued improvement and enhancement of compact models. This paper outlines the recent work of the BSIM project at the University of California, Berkeley,including BSIM5 research, BSIM4 enhancements, and BSIMSOI development. BSIM5 addresses the needs of nano-CMOS technology and RF high-speed CMOS circuit simulation. BSIM4 is a mature industrial standard MOSFET model with several improvements to meet the technology requirements. BSIMSOI is developed into a generic model framework for PD and FD SOI technology. An operation mode choice,via the calculation of the body potential △Vbi and body current/charge,helps circuit designers in the trend of the coexistence of PD and FD devices.
文摘A gate-all-around cylindrical （GAAC） transistor for sub-10nm scaling is proposed. The GAAC transistor device physics,TCAD simulation,and proposed fabrication procedure are reported for the first time. Among all other novel FinFET devices, the gate-all-around cylindrical device can be particularly applied for reducing the problems of the conventional multi-gate FinFET and improving the device performance and the scale down capability. According to our simulation,the gate-all-around cylindrical device shows many benefits over conventional multi-gate FinFET, including gate-all- around rectangular （GAAR） devices. With gate-all-around cylindrical architecture,the transistor is controlled by an essen- tially infinite number of gates surrounding the entire cylinder-shaped channel. The electrical integrity within the channel is improved by reducing the leakage current due to the non-symmetrical field accumulation such as the corner effect. The proposed fabrication procedures for devices having GAAC device architecture are also discussed. The method is characterized by its simplicity and full compatibility with conventional planar CMOS technology.
基金Supported by the National Natural Science Foundation of China under Grant No 10872141, the National Basic Research Program of China under Grant No 2007CB714000, and the Research Fund for the Doctoral Program of Higher Education of China under Grant No 20060056005.
文摘A new hysteretic nonlinear model of quad iced bundle conductors is constructed. The bifurcation equation is obtained by applying the undetermined fundamental frequency method of the complex normal form. The transition set and bifurcation diagrams for the singularity are presented. Then the corresponding relations between the unfolding parameters and the system parameters are given, and the sensitivity parameters and its range of values are obtained to analyze and to control the galloping of the quad iced bundle conductor.
文摘We propose a low-cost and high-damage-threshold phase control system that employs a piezoelectric ceramic transducer modulator controlled by a stochastic parallel gradient descent algorithm. Efficient phase locking of two fiber amplifiers is demonstrated. Experimental results show that energy encircled in the target pinhole is increased by a factor of 1.76 and the visibility of the fringe pattern is as high as 90% when the system is in close-loop. The phase control system has potential in phase locking of large-number and high-power fiber laser endeavors.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60873191, 60903152 and 60821001, the SRFDP under Grant No 200800131016, Beijing Nova Program under Grant No 2008B51, Key Project of the Ministry of Education of China under Grant No 109014, China Postdoctoral Science Foundation under Grant No 20090450018, Fujian Provincial Natural Science Foundation under Grant No 2008J0013, and the Foundation of Fujian Education Bureau under Grant No 3A08044.
文摘In a recent paper [Yan F L et al. Chin.Phys.Lett. 25（2008）1187], a quantum secret sharing the protocol between multiparty and multiparty with single photons and unitary transformations was presented. We analyze the security of the protocol and find that a dishonest participant can eavesdrop the key by using a special attack. Finally, we give a description of this strategy and put forward an improved version of this protocol which can stand against this kind of attack.
基金Supported by the High-Tech Research and Development Program of China under Grant No 2007AA05Z439, the National Basic Research Program of China under Grant No 2006CB202605, and the National Natural Science Foundation of China under Grant No 20873162.
文摘The introduction of poly（ether urethane） （PEUR） into polymer electrolyte based on poly（ethylene oxide）, LiI and I2, has significantly increased the ionic conductivity by nearly two orders of magnitudes. An increment of I3- diffusion coefficient is also observed. All-solid-state dye-sensitized solar cells are constructed using the polymer electrolytes. It was found that PEUR incorporation has a beneficial effect on the enhancement of open circuit voltage VOC by shifting the band edge of TiO2 to a negative value. Scanningelectron microscope images indicate the perfect interfacial contact between the TiO2 electrode and the blend electrolyte.
基金Supported by the National Natural Science Foundation of China under Grant No 10504042.
文摘The existing theory of decoy-state quantum cryptography assumes that the dark count rate is a constant, but in practice there exists fluctuation. We develop a new scheme of the decoy state, achieve a more practical key generation rate in the presence of fluctuation of the dark count rate, and compare the result with the result of the decoy-state without fluctuation. It is found that the key generation rate and maximal secure distance will be decreased under the influence of the fluctuation of the dark count rate.
基金Supported by the National Basic Research Program of China （2007CB935400 and 2006CB302700）, the National High Technology Research and Development Program of China （2008AA031402）, Science and Technology Council of Shanghai （0752nm013, 07QA14065, 07SA08, 08DZ2200700, 08JC1421700）, the National Nature Science Foundation of China （60776058）, and Chinese Academy of Sciences （083YQA1001）
文摘A thin TiO2 layer inserted in a phase change memory （PCM） cell to form a deep sub-micro bottom electrode （DBE） is proposed and its electro-thermal characteristics are investigated with the three-dimensional finite element analysis. Compared with the conventional PCM cell with a SiN stop layer, the reset threshold current of the PCM cell with the TiO2 layer is reduced from 1.8 mA to 1.2 mA and the ratio of the amorphous resistance and crystalline resistive increases from 65 to 100. The optimum thickness of the TiO2 layer and the optimum height of DBE are 10nm and 200nm, respectively. Therefore, the PCM cell with the TiO2 layer can decrease the programming power consumption and increase heating efficiency. The TiO2 film is a better candidate for the SiN film in the PCM cell structure to prepare DBE and to reduce programming power in the reset operation.
文摘We recently proposed a flexible quantum secure direct communication protocol [Chin. Phys. Lett. 23 （2006） 3152]. By analyzing its security in the perfect channel from the aspect of quantum information theory, we find that an eavesdropper is capable of stealing all the information without being detected. Two typical attacks are presented to illustrate this point. A solution to this loophole is also suggested and we show its powerfulness against the most general individual attack in the ideal case. We also discuss the security in the imperfect case when there is noise and loss.
文摘A three-dimensional finite element model for phase change random access memory （PCRAM） is established for comprehensive electrical and thermal analysis during SET operation. The SET behaviours of the heater addition structure （HS） and the ring-type contact in bottom electrode （RIB） structure are compared with each other. There are two ways to reduce the RESET current, applying a high resistivity interracial layer and building a new device structure. The simulation resuIts indicate that the variation of SET current with different power reduction ways is little. This study takes the RESET and SET operation current into consideration, showing that the RIB structure PCRAM cell is suitable for future devices with high heat efficiency and high-density, due to its high heat efficiency in RESET operation.
基金supported by the National Natural Science Foundation of China(Nos.61604137,61674130)
文摘Trap-induced current collapse has become one of the critical issues hindering the improvement of Ga Nbased microwave power devices. It is difficult to study the behavior of each trapping effect separately with the experimental measurement. Transient simulation is a useful technique for analyzing the mechanism of current collapse. In this paper, the coeffect of surface-and bulk-trapping behaviors on the performance of Al Ga N/Ga N HEMTs is investigated based on the two-dimensional（2 D） transient simulation. In addition, the mechanism of trapping effects is analyzed from the aspect of device physics. Two simulation models with different types of traps are used for comparison, and the simulated results reproduced the experimental measured data. It is found that the final steady-state current decreases when both the surface and bulk traps are taken into account in the model.However, contrary to the expectation, the total current collapse is dramatically reduced（e.g. from 18% to 4% for the 90 nm gate-length device）. The results suggest that the surface-related current collapse of Ga N-based HEMTs may be mitigated in some degree due to the participation of bulk traps with short time constant. The work in this paper will be helpful for further optimization design of material and device structures.
基金the National Natural Science Foundation of China(No.90607017)the Competitive Ear marked Grant 611207 from the Research Grant Council of Hong Kong SARthe International Joint Research Program(NEDO Grant)from Japan(No.NEDOO5/06.EG01)~~
文摘A surface potential-based model for undoped symmetric double-gate MOSFETs is derived by solving Poisson＇s equation to obtain the relationship between the surface potential and voltage in the channel region in a self-consistent way. The drain current expression is then obtained from Pao-Sah＇s double integral. The model consists of one set of surface potential equations,and the analytic drain current can be evaluated from the surface potential at the source and drain ends. It is demonstrated that the model is valid for all operation regions of the double-gate MOSFETs and without any need for simplification （e. g., by using the charge sheet assumption） or auxiliary fitting functions. The model has been verified by extensive comparisons with 2D numerical simulation under different operation conditions with different geometries. The consistency between the model calculation and numerical simulation demonstrates the accuracy of the model.
基金Project supported by the National Natural Science Foundation of China(No.60876027)the Competitive Earmarked Program from the Research Grant Council of Hong Kong SAR,China(No.HKUST6289/04E)+1 种基金the Industry,Education and Academy Cooperation Program of Guangdong Province,China(No.2009B090300318)the Fundamental Research Project of Shenzhen Science & Technology Foundation,China(No.JC200903160353A).
文摘A continuous surface potential versus voltage equation is proposed and then its solution is further discussed for a long channel intrinsic surrounding-gate（SRG） MOSFET from the accumulation to strong inversion region.The original equation is derived from the exact solution of a simplified Poisson equation and then the empirical correction is performed from the mathematical condition required by the continuity of the solution,which results in a continuous surface potential versus voltage equation,allowing the surface potential and the related derivatives to be described by an analytic solution from the accumulation to strong inversion region and from linear to the saturation region accurately and continuously.From these results,the dependences of surface potential and centric potential characteristics on device geometry are analyzed and the results are also verified with the 3-D numerical simulation from the aspect of accuracy and continuity tests.
文摘Aerosol technology provides efficient methods for producing nanoparticles with well-controlled composition and size distribution. This review provides an overview of methods and results obtained by using aerosol technology for producing nanostruetures for a variety of applications in semiconductor physics and device technology. Examples are given from： production of metal and metal alloy particles： semiconductor nanoparticles; semiconductor nanowires, grown both in the aerosol phase and on substrates; physics studies based on individual aerosol-generated devices; and large area deviees based on aerosol particles.
基金supported by the National Natural Science Foundation of China (No. 60876027)a Competitive Earmarked Grant from theResearch Grant Council of Hong Kong SAR (No. HKUST6289/04E)the International Joint Research Program from Japan (No.NEDOO5/06.EG01).
文摘A surface potential based non-charge-sheet core model for cylindrical undoped surrounding-gate （SRG） MOSFETs is presented. It is based on the exact surface potential solution of Poisson＇s equation and Pao-Sah＇s dual integral without the charge-sheet approximation, allowing the SRG-MOSFET characteristics to be adequately described by a single set of the analytic drain current equation in terms of the surface potential evaluated at the source and drain ends. It is valid for all operation regions and traces the transition from the linear to saturation and from the sub-threshold to strong inversion region without fitting-parameters, and verified by the 3-D numerical simulation.
