A new 11 T SRAM cell with write-assist is proposed to improve operation at low supply voltage. In this technique, a negative bit-line voltage is applied to one of the write bit-lines, while a boosted voltage is applie...A new 11 T SRAM cell with write-assist is proposed to improve operation at low supply voltage. In this technique, a negative bit-line voltage is applied to one of the write bit-lines, while a boosted voltage is applied to the other write bit-line where transmission gate access is used in proposed 11 T cell. Supply voltage to one of the inverters is interrupted to weaken the feedback. Improved write feature is attributed to strengthened write access devices and weakened feedback loop of cell at the same time. Amount of boosting required for write performance improvement is also reduced due to feedback weakening, solving the persistent problem of half-selected cells and reliability reduction of access devices with the other suggested boosted and negative bit-line techniques. The proposed design improves write time by 79%, 63% and slower by 52% with respect to LP 10 T, WRE 8 T and 6 T cells respectively. It is found that write margin for the proposed cell is improved by about 4×, 2.4× and 5.37× compared to WRE8 T, LP10 T and 6 T respectively. The proposed cell with boosted negative bit line（BNBL） provides47%, 31%, and 68.4% improvement in write margin with respect to no write-assist, negative bit line（NBL） and boosted bit line（BBL） write-assist respectively. Also, new sensing circuit with replica bit-line is proposed to give a more precise timing of applying boosted voltages for improved results. All simulations are done on TSMC 45 nm CMOS technology.展开更多
Early intervention services have demonstrated the effectiveness of streamlining distressed young people into appropriate support and traditional mental health services,when needed(Becker&Kleinman,2013).Initiation ...Early intervention services have demonstrated the effectiveness of streamlining distressed young people into appropriate support and traditional mental health services,when needed(Becker&Kleinman,2013).Initiation of early intervention seeks to reduce the negative consequences of delayed access to treatment and improve longer term outcomes(e.g.,Ajnakina et al.,2020;Austin et al.,2021).There is also a secondary aim of preventing transition to serious mental health disorders such as psychosis(Insel,2010).However,we are still falling short in our under-standing of which factors are reversible once someone presents for treatment,and turning back the clock on psychological dis-tress is proving more difficult than first supposed.展开更多
文摘A new 11 T SRAM cell with write-assist is proposed to improve operation at low supply voltage. In this technique, a negative bit-line voltage is applied to one of the write bit-lines, while a boosted voltage is applied to the other write bit-line where transmission gate access is used in proposed 11 T cell. Supply voltage to one of the inverters is interrupted to weaken the feedback. Improved write feature is attributed to strengthened write access devices and weakened feedback loop of cell at the same time. Amount of boosting required for write performance improvement is also reduced due to feedback weakening, solving the persistent problem of half-selected cells and reliability reduction of access devices with the other suggested boosted and negative bit-line techniques. The proposed design improves write time by 79%, 63% and slower by 52% with respect to LP 10 T, WRE 8 T and 6 T cells respectively. It is found that write margin for the proposed cell is improved by about 4×, 2.4× and 5.37× compared to WRE8 T, LP10 T and 6 T respectively. The proposed cell with boosted negative bit line（BNBL） provides47%, 31%, and 68.4% improvement in write margin with respect to no write-assist, negative bit line（NBL） and boosted bit line（BBL） write-assist respectively. Also, new sensing circuit with replica bit-line is proposed to give a more precise timing of applying boosted voltages for improved results. All simulations are done on TSMC 45 nm CMOS technology.
文摘Early intervention services have demonstrated the effectiveness of streamlining distressed young people into appropriate support and traditional mental health services,when needed(Becker&Kleinman,2013).Initiation of early intervention seeks to reduce the negative consequences of delayed access to treatment and improve longer term outcomes(e.g.,Ajnakina et al.,2020;Austin et al.,2021).There is also a secondary aim of preventing transition to serious mental health disorders such as psychosis(Insel,2010).However,we are still falling short in our under-standing of which factors are reversible once someone presents for treatment,and turning back the clock on psychological dis-tress is proving more difficult than first supposed.
