In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor fieldeffect transistors（MOSFETs） both theoretically and experimentally. The analytical model, which is ...In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor fieldeffect transistors（MOSFETs） both theoretically and experimentally. The analytical model, which is based on the smallsignal equivalent circuit of MOSFETs, predicts the significant improvement of the voltage responsivity Rv with the bias current. The experiment on antennas integrated with MOSFETs agrees with the analytical model, but the Rv improvement is accompanied first by a decrease, then an increase of the low-noise equivalent power（NEP） with the applied current. We determine the tradeoff between the low-NEP and high-Rv for the current-biased detectors. As the best-case scenario, we obtained an improvement of about six times in Rv without the cost of a higher NEP. We conclude that the current supply scheme can provide high-quality signal amplification in practical CMOS terahertz detection.展开更多
Using a scanning electron microscope (SEM) in the back-scattered electron (BSE) mode the composition of multi-element specimens may be determined based on the strong dependence of emission coefficient η on the averag...Using a scanning electron microscope (SEM) in the back-scattered electron (BSE) mode the composition of multi-element specimens may be determined based on the strong dependence of emission coefficient η on the average atomic number of elements Z. The output video signal of the usual BSE detectors is produced from their sensors, and the larger proportion of high-energy electrons with modified spectrum is added. Since η = is/ip (is and ip currents of specimen and probe), better accuracy must be achieved by direct measurements those currents on the specimen surface. Here, an experimental model of a current detector for a presented specimen is described. The cage is mounted on the carousel of the moving specimen stage. The input of the preamplifier is connected to the specimen holder in the form of a disk, the diameter of which is 12 mm. When the probe along its surface scanned, the input potential begins to pulsate with a negative polarity. The output of this preamplifier is connected to a small light-emitting diode, which creates intensity-modulated radiation in the chamber. Thus created the light video signal will be picked up by the photomultiplier of the E-T detector. The modes of true SE and BSE are set by applying tens bias volts of various polarities to the specimens or the cage itself.展开更多
A novel structure for a charge pump circuit is proposed, in which the charge-pump （CP） current can adaptively regulated according to phase-locked loops （PLL） frequency synthesis demand. The current follow technolo...A novel structure for a charge pump circuit is proposed, in which the charge-pump （CP） current can adaptively regulated according to phase-locked loops （PLL） frequency synthesis demand. The current follow technology is used to make perfect current matching characteristics, and the two differential inverters are implanted to increase the speed of charge pump and decrease output spur due to theory of low voltage difference signal. Simulation results, with 1st silicon 0. 25μm 2. 5 V complementary metal-oxide-semiconductor （CMOS） mixed-signal process, show the good current matching characteristics regardless of the charge pump output voltages.展开更多
In this work, we investigate the performance of InGaAs p-i-n photodetectors with cut-off wavelengths near 2.6 μm. The influences of different substrate materials on the optoelectronic properties of InGaAs detector ar...In this work, we investigate the performance of InGaAs p-i-n photodetectors with cut-off wavelengths near 2.6 μm. The influences of different substrate materials on the optoelectronic properties of InGaAs detector are also compared and discussed. GaAs-based device shows a significant enhancement in detector with a better performance for a InGaAs photodetector compared to InP- based device. In addition, our results show that the device performance is influenced by the conduction band offset. This work proves that InAlAs/InGaAs/GaAs structure is a promising candidate for high performance detector with optimally tuned band gap.展开更多
为提高势垒型中波InAs/InAsSb二类超晶格红外探测器器件性能,研究并设计了nBn势垒型InAs/InAsSb器件结构。针对InAs/InAsSb红外探测器器件结构特征,分析了暗电流的主导机制和能带特性,采用基于泊松方程、连续性方程和热方程的数值计算方...为提高势垒型中波InAs/InAsSb二类超晶格红外探测器器件性能,研究并设计了nBn势垒型InAs/InAsSb器件结构。针对InAs/InAsSb红外探测器器件结构特征,分析了暗电流的主导机制和能带特性,采用基于泊松方程、连续性方程和热方程的数值计算方法,通过精确调控吸收层掺杂、势垒层掺杂、势垒层厚度、温度和组分等,构建出高能量势垒以有效阻挡多数载流子,允许少数载流子迁移,实现价带偏移(Valence Band Offset,VBO)接近于零的要求,从而有效降低暗电流。研究结果表明,在1×10^(15)~1×10^(17)cm^(-3)范围内降低势垒层掺杂浓度,VBO和暗电流开启电压绝对值均会减小,当AlAs1-xSbx势垒中Sb组分为0.91时,VBO接近于零。对于吸收层,随着掺杂浓度的提高,暗电流呈现减小趋势,但趋势较不明显。在-0.5V偏压,140 K工作条件下,吸收层和势垒层掺杂浓度分别为1×10^(13)cm^(-3),1×10^(15)cm^(-3),吸收层与势垒层厚度分别为3μm,80 nm,得到器件结构参数优化后的暗电流低至4.5×10^(-7)A/cm^(2),证明InAs/InAsSb中波红外探测器具有高温工作的应用前景,可广泛应用于导弹预警、红外制导、航空航天等领域。展开更多
基金Project supported by the National Key R&D Program of China(Grant No.2016YFB-0402403)the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20141321)+1 种基金CAST Project,China(Grant No.08201601)the National Science Foundation for Young Scholars of China(Grant No.61404072)
文摘In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor fieldeffect transistors（MOSFETs） both theoretically and experimentally. The analytical model, which is based on the smallsignal equivalent circuit of MOSFETs, predicts the significant improvement of the voltage responsivity Rv with the bias current. The experiment on antennas integrated with MOSFETs agrees with the analytical model, but the Rv improvement is accompanied first by a decrease, then an increase of the low-noise equivalent power（NEP） with the applied current. We determine the tradeoff between the low-NEP and high-Rv for the current-biased detectors. As the best-case scenario, we obtained an improvement of about six times in Rv without the cost of a higher NEP. We conclude that the current supply scheme can provide high-quality signal amplification in practical CMOS terahertz detection.
文摘Using a scanning electron microscope (SEM) in the back-scattered electron (BSE) mode the composition of multi-element specimens may be determined based on the strong dependence of emission coefficient η on the average atomic number of elements Z. The output video signal of the usual BSE detectors is produced from their sensors, and the larger proportion of high-energy electrons with modified spectrum is added. Since η = is/ip (is and ip currents of specimen and probe), better accuracy must be achieved by direct measurements those currents on the specimen surface. Here, an experimental model of a current detector for a presented specimen is described. The cage is mounted on the carousel of the moving specimen stage. The input of the preamplifier is connected to the specimen holder in the form of a disk, the diameter of which is 12 mm. When the probe along its surface scanned, the input potential begins to pulsate with a negative polarity. The output of this preamplifier is connected to a small light-emitting diode, which creates intensity-modulated radiation in the chamber. Thus created the light video signal will be picked up by the photomultiplier of the E-T detector. The modes of true SE and BSE are set by applying tens bias volts of various polarities to the specimens or the cage itself.
文摘A novel structure for a charge pump circuit is proposed, in which the charge-pump （CP） current can adaptively regulated according to phase-locked loops （PLL） frequency synthesis demand. The current follow technology is used to make perfect current matching characteristics, and the two differential inverters are implanted to increase the speed of charge pump and decrease output spur due to theory of low voltage difference signal. Simulation results, with 1st silicon 0. 25μm 2. 5 V complementary metal-oxide-semiconductor （CMOS） mixed-signal process, show the good current matching characteristics regardless of the charge pump output voltages.
文摘In this work, we investigate the performance of InGaAs p-i-n photodetectors with cut-off wavelengths near 2.6 μm. The influences of different substrate materials on the optoelectronic properties of InGaAs detector are also compared and discussed. GaAs-based device shows a significant enhancement in detector with a better performance for a InGaAs photodetector compared to InP- based device. In addition, our results show that the device performance is influenced by the conduction band offset. This work proves that InAlAs/InGaAs/GaAs structure is a promising candidate for high performance detector with optimally tuned band gap.
文摘为提高势垒型中波InAs/InAsSb二类超晶格红外探测器器件性能,研究并设计了nBn势垒型InAs/InAsSb器件结构。针对InAs/InAsSb红外探测器器件结构特征,分析了暗电流的主导机制和能带特性,采用基于泊松方程、连续性方程和热方程的数值计算方法,通过精确调控吸收层掺杂、势垒层掺杂、势垒层厚度、温度和组分等,构建出高能量势垒以有效阻挡多数载流子,允许少数载流子迁移,实现价带偏移(Valence Band Offset,VBO)接近于零的要求,从而有效降低暗电流。研究结果表明,在1×10^(15)~1×10^(17)cm^(-3)范围内降低势垒层掺杂浓度,VBO和暗电流开启电压绝对值均会减小,当AlAs1-xSbx势垒中Sb组分为0.91时,VBO接近于零。对于吸收层,随着掺杂浓度的提高,暗电流呈现减小趋势,但趋势较不明显。在-0.5V偏压,140 K工作条件下,吸收层和势垒层掺杂浓度分别为1×10^(13)cm^(-3),1×10^(15)cm^(-3),吸收层与势垒层厚度分别为3μm,80 nm,得到器件结构参数优化后的暗电流低至4.5×10^(-7)A/cm^(2),证明InAs/InAsSb中波红外探测器具有高温工作的应用前景,可广泛应用于导弹预警、红外制导、航空航天等领域。
