期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Contact planarization and passivation lift tungsten diselenide PMOS performance
1
作者 Haoyu Peng Ping-Heng Tan Jiangbin Wu 《Journal of Semiconductors》 2025年第11期2-5,共4页
Two-dimensional(2D)transition metal dichalcogenides(TMDs),which allow atomic-scale manipulation,have supe-rior electrical and optical properties that challenge the limits of traditional bulk semiconductors like silico... Two-dimensional(2D)transition metal dichalcogenides(TMDs),which allow atomic-scale manipulation,have supe-rior electrical and optical properties that challenge the limits of traditional bulk semiconductors like silicon^([1,2]).As a repre-sentative TMD and a promising 2D channel material for high-performance,scalable p-type transistors,tungsten diselenide(WSe_(2))has attracted considerable academic and industrial interest for its potential in advanced complementary metal−oxide−semiconductor(CMOS)logic technology and in extending Moore’s Law^([3−7]). 展开更多
关键词 contact planarization metal dichalcogenides tmds which PASSIVATION pmos performance advanced complementary metal oxide semiconductor cmos logic tungsten diselenide two dimensional materials transition metal dichalcogenides
在线阅读 下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部